VISHAY IRF840B D Series Power MOSFET Owner’s Manual

: June 9, 2024
: VISHAY

Table of Contents

D Series Power MOSFET
- FEATURES
- APPLICATIONS
TYPICAL CHARACTERISTICS
- Peak Diode Recovery dV/dt Test Circuit
TO-220-1
Disclaimer
References
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VISHAY IRF840B D Series Power MOSFET

IRF840B D Series Power MOSFET

D Series Power MOSFET

PRODUCT SUMMARY

FEATURES

Optimal design
– Low area specific on-resistance
– Low input capacitance (Ciss)
– Reduced capacitive switching losses
– High body diode ruggedness
– Avalanche energy rated (UIS)
Optimal efficiency and operation
– Low cost
– Simple gate drive circuitry
– Low figure-of-merit (FOM): Ron x Qg
– Fast switching
Material categorization: for definitions of compliance please see www.vishay.com/doc99912

Note

This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details

APPLICATIONS

Consumer electronics
– Displays (LCD or plasma TV)
Server and telecom power supplies
– SMPS
Industrial
– Welding
– Induction heating
– Motor drives
Battery chargers

ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF840BPbF
Lead (Pb)-free and halogen-free| IRF840BPbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

V

Gate-source Voltage| VGS| ± 30
Gate-source voltage AC (f > 1 Hz)| 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 8.7|

A

TC = 100 °C| 5.5
Pulsed drain current a| IDM| 18
Linear derating factor| | 1.25| W/°C
Single pulse avalanche energy b| EAS| 56| mJ
Maximum power dissipation| PD| 156| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse diode dV/dt d| 0.37
Soldering recommendations (peak temperature) c| For 10 s| | 300| °C

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 7 A
c. 1.6 mm from case
d. ISD ≤ ID, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 0.8
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.58| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate boltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4 A| –| 0.70| 0.85| Ù
Forward transconductance a| gfs| VDS = 20 V, ID = 4 A| –| 3| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V, f = 1 MHz| –| 527| –|

pF

Output capacitance| Coss| –| 52| –
Reverse transfer capacitance| Crss| –| 8| –
Effective output capacitance, energy related b| Co(er)| VDS = 0 V to 400 V, VGS = 0 V| –| 46| –
Effective output capacitance, time related c| Co(tr)| –| 64| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 4 A, VDS = 400 V

| –| 15| 30|

nC

Gate-source charge| Qgs| –| 4| –
Gate-drain charge| Qgd| –| 7| –
Turn-on delay time| td(on)|

VDD = 400 V, ID = 4 A Rg = 9.1 Ù, VGS = 10 V

| –| 13| 26|

ns

Rise time| tr| –| 16| 32
Turn-off delay time| td(off)| –| 17| 34
Fall time| tf| –| 11| 22
Gate input resistance| Rg| f = 1 MHz, open drain| –| 1.8| –| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbols owing the integral reverse p – n junction diode
| –| –| 8|

A

Pulsed diode forward current| ISM| –| –| 32
Diode forward voltage| VSD| TJ = 25 °C, IS = 4 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr|

TJ = 25 °C, IF = IS = 4 A,

dI/dt = 100 A/μs, VR = 20 V

| –| 308| –| ns
Reverse recovery charge| Qrr| –| 1.8| –| μC
Reverse recovery current| IRRM| –| 11| –| A

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
b. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS
c. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)
Typical Characteristics

Peak Diode Recovery dV/dt Test Circuit

Typical Characteristics

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91521.

TO-220-1

Dimension

DIM.

| MILLIMETERS| INCHES
---|---|---
MIN.| MAX.| MIN.|

MAX.

A

| 4.24| 4.65| 0.167| 0.183
b| 0.69| 1.02| 0.027|

0.040

b(1)

| 1.14| 1.78| 0.045| 0.070
c| 0.36| 0.61| 0.014|

0.024

D

| 14.33| 15.85| 0.564| 0.624
E| 9.96| 10.52| 0.392|

0.414

e

| 2.41| 2.67| 0.095| 0.105
e(1)| 4.88| 5.28| 0.192|

0.208

F

| 1.14| 1.40| 0.045| 0.055
H(1)| 6.10| 6.71| 0.240|

0.264

J(1)

| 2.41| 2.92| 0.095| 0.115
L| 13.36| 14.40| 0.526|

0.567

L(1)

| 3.33| 4.04| 0.131| 0.159
Ø P| 3.53| 3.94| 0.139|

0.155

Q

| 2.54| 3.00| 0.100| 0.118

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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