VISHAY IRFB17N50L Power MOSFET Owner’s Manual

: June 9, 2024
: VISHAY

Table of Contents

VISHAY IRFB17N50L Power MOSFET
FEATURES
APPLICATIONS
PRODUCT SUMMARY
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
SPECIFICATIONS
TYPICAL CHARACTERISTICS
DIMENSION
Disclaimer
References
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VISHAY IRFB17N50L Power MOSFET

VISHAY-IRFB17N50L-Power-MOSFET-fig-1

FEATURES

Low gate charge Qg results in simple drive Requirement
Improved gate, avalanche, and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Low trr and soft diode recovery
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
- Please see the information / tables in this datasheet for details

APPLICATIONS

Switch mode power supply (SMPS)
Uninterruptible power supply
High speed power switching
ZVS and high frequency circuit
PWM inverters

PRODUCT SUMMARY

VDS (V)	500
RDS(on) (Ù)	VGS = 10 V
Qg max. (nC)	130
Qgs (nC)	33
Qgd (nC)	59
Configuration	Single

ORDERING INFORMATION

Package	TO-220AB
Lead (Pb)-free	IRFB17N50LPbF

ABSOLUTE MAXIMUM RATINGS

(TC = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	LIMIT	UNIT
Drain-source voltage	VDS	500	V
Gate-source voltage	VGS	± 30
Continuous drain current	VGS at 10 V	TC = 25 °C	ID

A

TC = 100 °C| 11
Pulsed drain current a| IDM| 64
Linear derating factor| | 1.8| W/°C
Single pulse avalanche energy b| EAS| 390| mJ
Repetitive avalanche current a| IAR| 16| A
Repetitive avalanche energy a| EAR| 22| mJ
Maximum power dissipation| TC = 25 °C| PD| 220| W
Peak diode recovery dV/dt c| dV/dt| 13| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 Ω, IAS = 16 A (see fig. 12)
ISD ≤ 16 A, dI/dt ≤ 347 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT
Maximum junction-to-ambient	RthJA	–	62

°C/W

Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 0.56

SPECIFICATIONS

(TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
---|---|---|---|---|---|---
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.6| –| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 3.0| –| 5.0| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 50| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 2.0| mA
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 9.9 A b| –| 0.28| 0.32| Ù
Forward transconductance| gfs| VDS = 50 V, ID = 9.9 A b| 11| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 2760| –|

pF

Output capacitance| Coss| –| 325| –
Reverse transfer capacitance| Crss| –| 37| –
Output capacitance| Coss| VGS = 0 V| VDS = 1.0 V , f = 1.0 MHz| –| 3690| –
VGS = 0 V| VDS = 400 V , f = 1.0 MHz| –| 84| –
Effective output capacitance| Coss eff.| VGS = 0 V| VDS = 0 V to 400 V c| –| 159| –
Total gate charge| Qg|

VGS = 10 V

|

ID = 16 A, VDS = 400 V,

see fig. 6 and 13 b

| –| –| 130|

nC

Gate-source charge| Qgs| –| –| 33
Gate-drain charge| Qgd| –| –| 59
Turn-on delay time| td(on)|

VDD = 250 V, ID = 16 A,

Rg = 7.5 Ù, see fig. 10 b

| –| 21| –|

ns

Rise time| tr| –| 51| –
Turn-off delay time| td(off)| –| 50| –
Fall time| tf| –| 28| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.3| –| 1.4| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol

D

showing the

integral reverse G

p – n junction diode

S

| –| –| 16|

A

Pulsed diode forward current a

|

ISM

|

–

|

–

|

64

Body diode voltage| VSD| TJ = 25 °C, IS = 16 A, VGS = 0 V b| –| –| 1.5| V
Body diode reverse recovery time| trr| TJ = 25 °C|

IF = 16 A, dI/dt = 100 A/μs b

| –| 170| 250| ns
TJ = 125 °C| –| 220| 330
Body diode reverse recovery charge| Qrr| TJ = 25 °C| –| 470| 710| nC
TJ = 125 °C| –| 810| 1210
Reverse recovery current| IRRM| | –| 7.3| 11| A
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
Pulse width ≤ 300 μs; duty cycle ≤ 2 %

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

VISHAY-IRFB17N50L-Power-MOSFET-fig-3

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91098.

DIMENSION

VISHAY-IRFB17N50L-Power-MOSFET-fig-14

DIM.	MILLIMETERS	INCHES
MIN.	MAX.	MIN.
A	4.24	4.65
b	0.69	1.02
b(1)	1.14	1.78
c	0.36	0.61
D	14.33	15.85
E	9.96	10.52
e	2.41	2.67
e(1)	4.88	5.28
F	1.14	1.40
H(1)	6.10	6.71
J(1)	2.41	2.92
L	13.36	14.40
L(1)	3.33	4.04
Ø P	3.53	3.94
Q	2.54	3.00

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note
M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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