VISHAY IRF840 Siliconix Power MOSFET Owner’s Manual
- June 8, 2024
- VISHAY
Table of Contents
VISHAY IRF840 Siliconix Power MOSFET
FEATURES
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note - This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry.
PRODUCT SUMMARY
VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.85
Qg max. (nC)| 63
Qgs (nC)| 9.3
Qgd (nC)| 32
Configuration| Single
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRF840PbF
Lead (Pb)-free and halogen-free| IRF840PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source voltage| VGS| ± 20| V
Continuous drain current| VGS at 10 V| TC = 25 °C| ID| 8.0|
A
TC = 100 °C| 5.1
Pulsed drain current a| IDM| 32
Linear derating factor| | 1.0| W/°C
Single pulse avalanche energy b| EAS| 510| mJ
Repetitive avalanche current a| IAR| 8.0| A
Repetitive avalanche energy a| EAR| 13| mJ
Maximum power dissipation| TC = 25 °C| PD| 125| W
Peak diode recovery dV/dt c| dV/dt| 3.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- VDD = 50 V, starting TJ = 25 °C, L = 14 mH, Rg = 25 Ω, IAS = 8.0 A (see fig. 12)
- ISD ≤ 8.0 A, dI/dt ≤ 100 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
- 1.6 mm from case
THERMAL RESISTANCE RATINGS
PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| 1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.78|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-source leakage| IGSS| VGS = ± 20 V| –| –| ± 100| nA
Zero gate voltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 4.8 A b| –| –|
0.85| W
Forward transconductance| gfs| VDS = 50 V, ID = 4.8 A b| 4.9| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V,
f = 1.0 MHz, see fig. 5
| –| 1300| –|
pF
Output capacitance| Coss| –| 310| –
Reverse transfer capacitance| Crss| –| 120| –
Total gate charge| Qg|
VGS = 10 V
|
ID = 8 A, VDS = 400 V,
see fig. 6 and 13 b
| –| –| 63|
nC
Gate-source charge| Qgs| –| –| 9.3
Gate-drain charge| Qgd| –| –| 32
Turn-on delay time| td(on)|
VDD = 250 V, ID = 8 A
Rg = 9.1 W, RD = 31 W, see fig. 10 b
| –| 14| –|
ns
Rise time| tr| –| 23| –
Turn-off delay time| td(off)| –| 49| –
Fall time| tf| –| 20| –
Internal drain inductance| LD| Between lead,6 mm (0.25″) from package and
center of die contact
| –| 4.5| –|
nH
Internal source inductance| LS| –| 7.5| –
Gate input resistance| Rg| f = 1 MHz, open drain| 0.6| –| 2.8| W
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reverse p – n junction diode
| –| –| 8.0|
A
Pulsed diode forward current a| ISM| –| –| 32
Body diode voltage| VSD| TJ = 25 °C, IS = 8 A, VGS = 0 V b| –| –| 2.0| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 8 A, dI/dt = 100 A/μs
b| –| 460| 970| ns
Body diode reverse recovery charge| Qrr| –| 4.2| 8.9| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
- Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dv/dt Test Circuit
TO-220-1
Package Picture
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References
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