Vishay IRFP450A Mosfet 1 N Channel 190 W To 247AC Owner’s Manual

Vishay IRFP450A Mosfet 1 N Channel 190 W To 247AC

Product Information

• Product Name: IRFP450A
• Brand: Vishay Siliconix
• Product Type: Power MOSFET
• Package Type: TO-247
• Configuration: N-Channel MOSFET
• Drain-Source Voltage (VDS): 500V
• Gate-Source Voltage (VGS): 10V
• Continuous Drain Current (ID): 64A
• Pulsed Drain Current (IDM): 16A
• Maximum Gate Charge (Qg): 26nC
• Gate-Source Charge (Qgs): 16nC
• Gate-Drain Charge (Qgd): 26nC
• Thermal Resistance Ratings:
  • Junction-to-Ambient (RthJA): Max. 40°C/W
  • Junction-to-Case (RthJC): Max. 0.65°C/W

Product Usage Instructions

1. Make sure the product is handled and installed by a qualified professional.
2. Ensure that the product is used within the specified voltage and current limits:
   • Voltage: Do not exceed 500V (Drain-Source Voltage).
   • Current: Keep the continuous drain current (ID) below 64A and the pulsed drain current (IDM) below 16A.
3. Take note of the thermal resistance ratings for proper heat dissipation:
   • Junction-to-Ambient (RthJA) should not exceed 40°C/W.
   • Junction-to-Case (RthJC) should not exceed 0.65°C/W.
4. Refer to the provided technical specifications for more detailed information on voltage, temperature, and other parameters.
5. For any technical questions or support, contact [email protected].

Note:
This information is subject to change without notice. Refer to the official product documentation available at www.vishay.com/doc?91000 for specific disclaimers and updates.

Overview

PRODUCT SUMMARY

PRODUCT SUMMARY

VDS (V)| 500
RDS(on) (W)| VGS = 10 V| 0.40
Qg (Max.) (nC)| 64
Qgs (nC)| 16
Qgd (nC)| 26
Configuration| Single

FEATURES

• Low Gate Charge Qg Results in Simple Drive Requirement
• Improved Gate, Avalanche, and Dynamic dV/dt Ruggedness
• Fully Characterized Capacitance and Avalanche Voltage and Current
• Effective Coss Specified
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912.

APPLICATIONS

• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High-Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward
• Half Bridge, Full Bridge
• PFC Boost

ORDERING INFORMATION

ORDERING INFORMATION

Package| TO-247
Lead (Pb)-free| IRFP450APbF

ABSOLUTE MAXIMUM RATINGS

ABSOLUTE MAXIMUM RATINGS T C = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-Source Voltage| VDS| 500| V
Gate-Source Voltage| VGS| ± 30
Continuous Drain Current| VGS at 10 V| TC = 25 °C| ID| 14|

A

TC = 100 °C| 8.7
Pulsed Drain Currenta| IDM| 56
Linear Derating Factor|  | 1.5| W/°C
Single Pulse Avalanche Energyb| EAS| 760| mJ
Repetitive Avalanche Currenta| IAR| 14| A
Repetitive Avalanche Energya| EAR| 19| mJ
Maximum Power Dissipation| TC = 25 °C| PD| 190| W
Peak Diode Recovery dV/dtc| dV/dt| 4.1| V/ns
Operating Junction and Storage Temperature Range| TJ, Tstg| – 55 to + 150| °C
Soldering Recommendations (Peak Temperature)| For 10 s|  | 300d
Mounting Torque| 6-32 or M3 screw|  | 10| lbf · in
1.1| N · m

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
• Starting TJ = 25 °C, L = 7.8 mH, RG = 25 Ω, IAS = 14 A (see fig. 12)
• ISD ≤ 14 A, dI/dt ≤ 130 A/μs, VDD ≤ VDS, TJ ≤ 150 °C
• 1.6 mm from case

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum Junction-to-Ambient| RthJA| –| 40|

°C/W

Case-to-Sink, Flat, Greased Surface| RthCS| 0.24| –
Maximum Junction-to-Case (Drain)| RthJC| –| 0.65

SPECIFICATIONS

SPECIFICATIONS T J = 25 °C, unless otherwise noted

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-Source Breakdown Voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS Temperature Coefficient| DVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.58| –| V/°C
Gate-Source Threshold Voltage| VGS(th)| VDS = VGS, ID = 250 μA| 2.0| –| 4.0| V
Gate-Source Leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA

Zero Gate Voltage Drain Current

| IDSS| VDS = 500 V, VGS = 0 V| –| –| 25|

μA

VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 250
Drain-Source On-State Resistance| RDS(on)| VGS = 10 V| ID = 8.4 Ab| –| –| 0.40| W
Forward Transconductance| gfs| VDS = 50 V, ID = 8.4 Ab| 7.8| –| –| S
Dynamic
Input Capacitance| Ciss| VGS = 0 V, VDS = 25 V,

f = 1.0 MHz, see fig. 5

| –| 2038| –|

pF

Output Capacitance| Coss| –| 307| –
Reverse Transfer Capacitance| Crss| –| 10| –
Output Capacitance| Coss| VGS = 0 V; VDS = 1.0 V, f = 1.0 MHz|  | 2859|
Output Capacitance| Coss| VGS = 0 V; VDS = 400 V, f = 1.0 MHz|  | 81|
Effective Output Capacitance| Coss eff.| VGS = 0 V; VDS = 0 V to 400 Vc|  | 96|
Total Gate Charge| Qg|

VGS = 10 V

|

ID = 14 A, VDS = 400 V,

see fig. 6 and 13b

| –| –| 64|

nC

Gate-Source Charge| Qgs| –| –| 16
Gate-Drain Charge| Qgd| –| –| 26
Turn-On Delay Time| td(on)|

VDD = 250 V, ID = 14 A,

RG = 6.2 W, RD = 17 W, see fig. 10b

| –| 15| –|

ns

Rise Time| tr| –| 36| –
Turn-Off Delay Time| td(off)| –| 35| –
Fall Time| tf| –| 29| –
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current| IS| MOSFET symbol showing the integral reverse p – n junction diode

| –| –| 14|

A

Pulsed Diode Forward Current| ISM| –| –| 56
Body Diode Voltage| VSD| TJ = 25 °C, IS = 14 A, VGS = 0 Vb| –| –| 1.4| V
Body Diode Reverse Recovery Time| trr| TJ = 25 °C, IF = 14 A, dI/dt = 100 A/μsb| –| 487| 731| ns
Body Diode Reverse Recovery Charge| Qrr| –| 3.9| 5.8| μC
Forward Turn-On Time| ton| Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

• Repetitive rating; pulse width limited by maximum junction temperature (see Fig. 11)
• Pulse width ≤ 300 μs; duty cycle ≤ 2 %
• Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS

TYPICAL CHARACTERISTICS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91230.

Package Information

TO-247AC (High Voltage)

VERSION 1: FACILITY CODE = 9

 | MILLIMETERS|
---|---|---
DIM.| MIN.| NOM.| MAX.| NOTES
A| 4.83| 5.02| 5.21|
A1| 2.29| 2.41| 2.55|
A2| 1.17| 1.27| 1.37|
b| 1.12| 1.20| 1.33|
b1| 1.12| 1.20| 1.28|
b2| 1.91| 2.00| 2.39| 6
b3| 1.91| 2.00| 2.34|
b4| 2.87| 3.00| 3.22| 6, 8
b5| 2.87| 3.00| 3.18|
c| 0.40| 0.50| 0.60| 6
c1| 0.40| 0.50| 0.56|
D| 20.40| 20.55| 20.70| 4
D1| 16.46| 16.76| 17.06| 5
---|---|---|---|---
D2| 0.56| 0.66| 0.76|
E| 15.50| 15.70| 15.87| 4
E1| 13.46| 14.02| 14.16| 5
E2| 4.52| 4.91| 5.49| 3
e| 5.46 BSC|
L| 14.90| 15.15| 15.40|
L1| 3.96| 4.06| 4.16| 6
Ø P| 3.56| 3.61| 3.65| 7
Ø P1| 7.19 ref.|
Q| 5.31| 5.50| 5.69|
S| 5.51 BSC|

Notes

1. Package reference: JEDEC® TO247, variation AC
2. All dimensions are in mm
3. Slot required, notch may be rounded
4. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
5. Thermal pad contour optional with dimensions D1 and E1
6. Lead finish uncontrolled in L1
7. Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
8. Dimensions b2 and b4 do not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition

VERSION 2: FACILITY CODE = Y

 | MILLIMETERS|
---|---|---
DIM.| MIN.| MAX.| NOTES
A| 4.58| 5.31|
A1| 2.21| 2.59|
A2| 1.17| 2.49|
b| 0.99| 1.40|
b1| 0.99| 1.35|
b2| 1.53| 2.39|
b3| 1.65| 2.37|
b4| 2.42| 3.43|
b5| 2.59| 3.38|
c| 0.38| 0.86|
c1| 0.38| 0.76|
D| 19.71| 20.82|
D1| 13.08| –|
D2| 0.51| 1.30|
---|---|---|---
E| 15.29| 15.87|
E1| 13.72| –|
e| 5.46 BSC|
Ø k| 0.254|
L| 14.20| 16.25|
L1| 3.71| 4.29|
Ø P| 3.51| 3.66|
Ø P1| –| 7.39|
Q| 5.31| 5.69|
R| 4.52| 5.49|
S| 5.51 BSC|

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)
7. Outline conforms to JEDEC outline TO-247 with the exception of dimension c

VERSION 3: FACILITY CODE = N

ECN: E22-0452-Rev. G, 31-Oct-2022 DWG: 5971

Notes

1. Dimensioning and tolerancing per ASME Y14.5M-1994
2. The contour of the slot optional
3. Dimensions D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005″) per side. These dimensions are measured at the outermost extremes of the plastic body
4. Thermal pad contour optional with dimensions D1 and E1
5. Lead finish uncontrolled in L1
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154″)

Disclaimer

ALL PRODUCTS, PRODUCT SPECIFICATIONS, AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION DESIGN, OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies, or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation, or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential, or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for a particular purpose, non- infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein.

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© 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

For technical questions, contact: [email protected].

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000.

www.vishay.com.

References

• Vishay Intertechnology: Passives & Discrete Semiconductors
• IRFP450A MOSFETs | Vishay

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