IXYS DSEI60-06A FRED Fast Recovery Epitaxial And Single Diode User Guide

: June 1, 2024
: IXYS

Table of Contents

IXYS DSEI60-06A FRED Fast Recovery Epitaxial And Single Diode
Features / Advantages

IXYS DSEI60-06A FRED Fast Recovery Epitaxial And Single Diode

IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single-
PRODUCT

Specifications

Part Number: DSEI60-06A
VRRM: 600 V
IFAV: 60 A
tRR: 35 ns
Package: TO-247

Product Information
The DSEI60-06A is a Fast Recovery Epitaxial Diode Single Diode manufactured by IXYS. It features planar passivated chips, low leakage current, very short recovery time, improved thermal] behavior, very low Irm-values, soft recovery behavior, and more..

Features / Advantages

Planar passivated chips
Low leakage current
Very short recovery time
Improved thermal behavior
Soft recovery behavior
Avalanche voltage rated for reliable operation
Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch

Package Details

TO-247 package
Industry-standard outline
RoHS compliant
Epoxy meets UL 94V-0 standards

Installation

Ensure the power supply is turned off before installation.
Identify the cathode side of the diode (backside).
Mount the diode securely in the circuit following the correct polarity.
Connect the necessary leads to complete the circuit.

Maintenance
Regularly inspect the diode for any signs of damage or overheating. Replace the diode if any abnormalities are detected to prevent circuit failure.

FAQ:
Q: What are some common applications of the DSEI60-06A diode?
A: The DSEI60-06A diode is commonly used as an antiparallel diode for high- frequency switching devices, antisaturation diode, snubber diode, free- wheeling diode, and in rectifiers for switch-mode power supplies (SMPS).

FRED

Fast Recovery Epitaxial Diode Single Diode

Part number
DSEI60-06A

Features / Advantages:

Planar passivated chips
Low leakage current
Very short recovery time
Improved thermal behaviour
● Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
  Turn-on loss in the commutating switch

Applications: Package:

Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power supplies (SMPS)
Uninterruptible power supplies (UPS)

Package: TO-247

Industry standard outline
RoHS compliant
Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

$IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single- $9$$

Package	TO-247	Ratings
Symbol	Definition	Conditions
max.	Unit
I RMS	RMS current	per terminal
T VJ	virtual junction temperature
T op	operation temperature
T stg	storage temperature
Weight		6
M D	mounting torque

F

C

| mounting force with clip| | 20| 120| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-06A| DSEI60-06A| Tube| 30| 434310

$IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single- $5$$ Outlines TO-247

$IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single- $6$$

Sym.| Inches

min. max.

| Millimeter min.     max.
---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31     5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| –       0.177| –         4.49
Ø P| 0.140 0.144| 3.55     3.65
Q| 0.212 0.244| 5.38     6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39

Fast Diode

$IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single- $8$$ $IXYS-DSEI60-06A-FRED -Fast- Recovery-Epitaxial-And-Single- $9$$ $IXYS-DSEI60-06A-FRED -Fast-Recovery-Epitaxial-And-Single- $1$$

Fig. 7 Transient thermal impedance junction to case

Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.080 0.0018
2 0.120 0.0100
3 0.100 0.5000
4 0.200 0.0800

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20201028c
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