IXYS DSEI60-06A FRED Fast Recovery Epitaxial And Single Diode User Guide
- June 1, 2024
- IXYS
Table of Contents
IXYS DSEI60-06A FRED Fast Recovery Epitaxial And Single Diode
Specifications
- Part Number: DSEI60-06A
- VRRM: 600 V
- IFAV: 60 A
- tRR: 35 ns
- Package: TO-247
Product Information
The DSEI60-06A is a Fast Recovery Epitaxial Diode Single Diode manufactured by
IXYS. It features planar passivated chips, low leakage current, very short
recovery time, improved thermal] behavior, very low Irm-values, soft recovery
behavior, and more..
Features / Advantages
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behavior
- Soft recovery behavior
- Avalanche voltage rated for reliable operation
- Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch
Package Details
- TO-247 package
- Industry-standard outline
- RoHS compliant
- Epoxy meets UL 94V-0 standards
Installation
- Ensure the power supply is turned off before installation.
- Identify the cathode side of the diode (backside).
- Mount the diode securely in the circuit following the correct polarity.
- Connect the necessary leads to complete the circuit.
Maintenance
Regularly inspect the diode for any signs of damage or overheating. Replace
the diode if any abnormalities are detected to prevent circuit failure.
FAQ:
Q: What are some common applications of the DSEI60-06A diode?
A: The DSEI60-06A diode is commonly used as an antiparallel diode for high-
frequency switching devices, antisaturation diode, snubber diode, free-
wheeling diode, and in rectifiers for switch-mode power supplies (SMPS).
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI60-06A
Features / Advantages:
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- ● Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
Turn-on loss in the commutating switch
- Power dissipation within the diode
Applications: Package:
- Antiparallel diode for high frequency
- switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
| Package | TO-247 | Ratings |
|---|---|---|
| Symbol | Definition | Conditions |
| max. | Unit | |
| I RMS | RMS current | per terminal |
| T VJ | virtual junction temperature | |
| T op | operation temperature | |
| T stg | storage temperature | |
| Weight | 6 | |
| M D | mounting torque |
F
C
| mounting force with clip| | 20| 120| N
Ordering| Ordering Number| Marking on Product| Delivery
Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-06A| DSEI60-06A| Tube| 30| 434310
Outlines TO-247
Sym.| Inches
min. max.
| Millimeter min. max.
---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31 5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| – 0.177| – 4.49
Ø P| 0.140 0.144| 3.55 3.65
Q| 0.212 0.244| 5.38 6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39
Fast Diode
Fig. 7 Transient thermal impedance junction to case
Constants for ZthJC calculation:
- i Rthi (K/W) ti (s)
- 1 0.080 0.0018
- 2 0.120 0.0100
- 3 0.100 0.5000
- 4 0.200 0.0800
IXYS reserves the right to change limits, conditions and dimensions. Data
according to IEC 60747and per semiconductor unless otherwise specified
20201028c
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