VISHAY IRF830B D Series Power MOSFET Owner’s Manual

: June 13, 2024
: VISHAY

Table of Contents

FEATURES
APPLICATIONS
THERMAL RESISTANCE RATINGS
SPECIFICATIONS
TYPICAL CHARACTERISTICS
Package Information
Legal Disclaimer Notice
CUSTOMERS SUPPORT
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

VISHAY IRF830B D Series Power MOSFET

FEATURES

Optimal design
- Low area specific on-resistance
- Low input capacitance (Ciss)
- Reduced capacitive switching losses
- High body diode ruggedness
- Avalanche energy rated (UIS)
Optimal efficiency and operation
- Low cost
- Simple gate drive circuitry
- Low figure-of-merit (FOM): Ron x Qg
- Fast switching
Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

Consumer electronics
- Displays (LCD or plasma TV)
Server and telecom power supplies
- SMPS
Industrial
- Welding
- Induction heating
- Motor drives
Battery chargers

PRODUCT SUMMARY

VDS (V) at TJ max.| 550
RDS(on) max. (Ù) at 25 °C| VGS = 10 V| 1.5
Qg max. (nC)| 20
Qgs (nC)| 3
Qgd (nC)| 5
Configuration| Single
ORDERING INFORMATION

Package| TO-220AB
Lead (Pb)-free| IRF830BPbF
Lead (Pb)-free and halogen-free| IRF830BPbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 500| V
Gate-source Voltage| VGS| ± 30
Gate-source voltage AC (f > 1 Hz)| 30
Continuous drain current (TJ = 150 °C)| VGS at 10 V| TC = 25 °C| ID| 5.3| A
TC = 100 °C| 3.4
Pulsed drain current a| IDM| 10
Linear derating factor| | 0.83| W/°C
Single pulse avalanche energy b| EAS| 28.8| mJ
Maximum power dissipation| PD| 104| W
Operating junction and storage temperature range| TJ, Tstg| -55 to +150| °C
Drain-source voltage slope| TJ = 125 °C| dV/dt| 24| V/ns
Reverse diode dV/dt d| 0.28
Soldering recommendations (peak temperature) c| For 10 s| | 300| °C

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 Ω, IAS = 5 A
c. 1.6 mm from case
d. ISD ≤ ID, starting TJ = 25 °C

THERMAL RESISTANCE RATINGS

PARAMETER| SYMBOL| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| 62| °C/W
Maximum junction-to-case (drain)| RthJC| –| 1.2

SPECIFICATIONS

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.| MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 500| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 250 μA| –| 0.58| –| V/°C
Gate-source threshold voltage (N)| VGS(th)| VDS = VGS, ID = 250 μA| 3| –| 5| V
Gate-source leakage| IGSS| VGS = ± 30 V| –| –| ± 100| nA
Zero gate boltage drain current| IDSS| VDS = 500 V, VGS = 0 V| –| –| 1| μA
VDS = 400 V, VGS = 0 V, TJ = 125 °C| –| –| 10
Drain-source on-state resistance| RDS(on)| VGS = 10 V| ID = 2.5 A| –| 1.2| 1.5| Ù
Forward transconductance a| gfs| VDS = 20 V, ID = 2.5 A| –| 1.8| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 100 V,

f = 1 MHz

| –| 325| –| pF
Output capacitance| Coss| –| 34| –
Reverse transfer capacitance| Crss| –| 6| –
Effective output capacitance, energy related b| Co(er)| VDS = 0 V to 400 V, VGS = 0 V| –| 31| –
Effective output capacitance, time related c| Co(tr)| –| 41| –
Total gate charge| Qg| VGS = 10 V| ID = 2.5 A, VDS = 400 V| –| 10| 20| nC
Gate-source charge| Qgs| –| 3| –
Gate-drain charge| Qgd| –| 5| –
Turn-on delay time| td(on)| VDD = 400 V, ID = 2.5 A Rg = 9.1 Ù, VGS = 10 V| –| 12| 24| ns
Rise time| tr| –| 11| 22
Turn-off delay time| td(off)| –| 14| 28
Fall time| tf| –| 11| 22
Gate input resistance| Rg| f = 1 MHz, open drain| 0.8| 1.7| 3.4| Ù
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral reverse P – N junction diode
| –| –| 5| A
Pulsed diode forward current| ISM| –| –| 20
Diode forward voltage| VSD| TJ = 25 °C, IS = 4 A, VGS = 0 V| –| –| 1.2| V
Reverse recovery time| trr| TJ = 25 °C, IF = IS = 2.5 A, dI/dt = 100 A/μs, VR = 20 V| –| 320| –| ns
Reverse recovery charge| Qrr| –| 1.2| –| μC
Reverse recovery current| IRRM| –| 8| –| A

TYPICAL CHARACTERISTICS

(25 °C, unless otherwise noted)

Peak Diode Recovery dV/dt Test Circuit

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91520.

Package Information

DIM.	MILLIMETERS	INCHES
MIN.	MAX.	MIN.
A	4.24	4.65
b	0.69	1.02
b(1)	1.14	1.78
c	0.36	0.61
D	14.33	15.85
E	9.96	10.52
e	2.41	2.67
e(1)	4.88	5.28
F	1.14	1.40
H(1)	6.10	6.71
J(1)	2.41	2.92
L	13.36	14.40
L(1)	3.33	4.04
Ø P	3.53	3.94
Q	2.54	3.00

ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031

Note

M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM

Legal Disclaimer Notice

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CUSTOMERS SUPPORT

For technical questions, contact: hvm@vishay.com
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