VISHAY IRLZ14 Power MOSFET Owner’s Manual
- June 9, 2024
- VISHAY
Table of Contents
VISHAY IRLZ14 Power MOSFET
Power MOSFET
PRODUCT SUMMARY
VDS (V)|
60
RDS(on) (Ù)|
VGS = 5.0 V
|
0.20
Qg (Max.) (nC)|
8.4
Qgs (nC)|
3.5
Qgd (nC)|
6.0
Configuration|
Single
FEATURES
- Dynamic dV/dt rating
- Logic-level gate drive
- RDS(on) specified at VGS = 4 V and 5 V
- 175 °C operating temperature
- Fast switching
- Ease of paralleling
- Simple drive requirements
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
- This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 W. The low
thermal resistance and low package cost of the TO-220AB contribute to its wide
acceptance throughout the industry
ORDERING INFORMATION
Package| TO-220AB
Lead (Pb)-free| IRLZ14PbF
Lead (Pb)-free and halogen-free| IRLZ14PbF-BE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| LIMIT| UNIT
Drain-source voltage| VDS| 60| V
Gate-source voltage| VGS| ± 10
Continuous drain current| VGS at 5 V| TC = 25 °C| ID| 10|
A
TC = 100 °C| 7.2
Pulsed drain current a| IDM| 40
Linear derating factor| | 0.29| W/°C
Single pulse avalanche energy b| EAS| 39.5| mJ
Maximum power dissipation| TC = 25 °C| PD| 43| W
Peak diode recovery dV/dt c| dV/dt| 4.5| V/ns
Operating junction and storage temperature range| TJ, Tstg| -55 to +175| °C
Soldering recommendations (peak temperature) d| For 10 s| | 300 d
Mounting torque| 6-32 or M3 screw| | 10| lbf · in
1.1| N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction
temperature (see fig. 11)
b. VDD = 25 V, starting TJ = 25 °C, L = 0.79 mH, Rg = 25 Ω, IAS = 10 A
(see fig. 12)
c. ISD ≤ 10 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 175 °C
d. 1.6 mm from case
THERMAL RESISTANCE
PARAMETER| SYMBOL| MIN.| TYP.| MAX.| UNIT
Maximum junction-to-ambient| RthJA| –| –| 62|
°C/W
Case-to-sink, flat, greased surface| RthCS| –| 0.50| –
Maximum junction-to-case (drain)| RthJC| –| –| 3.5
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER| SYMBOL| TEST CONDITIONS| MIN.| TYP.|
MAX.| UNIT
Static
Drain-source breakdown voltage| VDS| VGS = 0 V, ID = 250 μA| 60| –| –| V
VDS temperature coefficient| ÄVDS/TJ| Reference to 25 °C, ID = 1 mA| –| 0.070|
–| V/°C
Gate-source threshold voltage| VGS(th)| VDS = VGS, ID = 250 μA| 1.0| –| 2.0| V
Gate-source leakage| IGSS| VGS = ± 10 V| –| –| ± 100| nA
Zero gate voltage drain current
| IDSS| VDS = 60 V, VGS = 0 V| –| –| 25|
μA
VDS = 48 V, VGS = 0 V, TJ = 150 °C| –| –| 250
Drain-source on-state resistance
| RDS(on)| VGS = 5.0 V| ID = 6.0 Ab| –| –| 0.20| Ù
VGS = 4.0 V| ID = 5.0 Ab| –| –| 0.28
Forward transconductance| gfs| VDS = 25 V, ID = 6.0 Ab| 3.5| –| –| S
Dynamic
Input capacitance| Ciss| VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5| –|
400| –|
pF
Output capacitance| Coss| –| 170| –
Reverse transfer capacitance| Crss| –| 42| –
Total gate charge| Qg|
VGS = 5.0 V
|
ID = 10 A, VDS = 48 V see fig. 6 and 13b
| –| –| 8.4|
nC
Gate-source charge| Qgs| –| –| 3.5
Gate-drain charge| Qgd| –| –| 6.0
Turn-on delay time| td(on)| VDD = 30 V, ID = 10 A Rg = 12 Ù, RD= 2.8 Ù
see fig. 10b
| –| 9.3| –|
ns
Rise time| tr| –| 110| –
Turn-off delay time| td(off)| –| 17| –
Fall time| tf| –| 26| –
Internal drain inductance| | Between lead, 6 mm (0.25″) from package and
center of die contact
| –| 4.5| –|
nH
Internal source inductance| LS| –| 7.5| –
Drain-Source Body Diode Characteristics
Continuous source-drain diode current| IS| MOSFET symbol showing the integral
reverse p – n junction diode
| –| –| 10|
A
Pulsed diode forward current a| ISM| –| –| 40
Body diode voltage| VSD| TJ = 25 °C, IS = 10 A, VGS = 0 Vb| –| –| 1.6| V
Body diode reverse recovery time| trr| TJ = 25 °C, IF = 10 A, dI/dt = 100
A/μsb| –| 93| 130| ns
Body diode reverse recovery charge| Qrr| –| 0.34| 0.65| μC
Forward turn-on time| ton| Intrinsic turn-on time is negligible (turn-on is
dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature
(see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Peak Diode Recovery dV/dt Test Circuit
TO-220-1
DIM.
| MILLIMETERS| INCHES
---|---|---
MIN.| MAX.| MIN.|
MAX.
A
| 4.24| 4.65| 0.167| 0.183
b| 0.69| 1.02| 0.027|
0.040
b(1)
| 1.14| 1.78| 0.045| 0.070
c| 0.36| 0.61| 0.014|
0.024
D
| 14.33| 15.85| 0.564| 0.624
E
| 9.96| 10.52| 0.392|
0.414
e| 2.41| 2.67| 0.095|
0.105
e(1)
| 4.88| 5.28| 0.192| 0.208
F| 1.14| 1.40| 0.045|
0.055
H(1)
| 6.10| 6.71| 0.240| 0.264
J(1)| 2.41| 2.92|
0.095
|
0.115
L
| 13.36| 14.40| 0.526| 0.567
L(1)| 3.33| 4.04| 0.131|
0.159
Ø P
| 3.53| 3.94| 0.139| 0.155
Q| 2.54| 3.00| 0.100|
0.118
ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031
Note
- M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM
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References
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