IXYS MDO500-22N1 High Voltage Standard Rectifier Module Owner’s Manual

MDO500-22N1 High Voltage Standard Rectifier Module

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Product Specifications:

• Part Number: MDO500-22N1
• VRRM: 2200 V
• IFAV: 560 A
• VF: 0.98 V
• Isolation Voltage: 4800 V~
• Package: Y1

Product Usage Instructions:

Features and Advantages:

• Planar passivated chips
• Very low leakage current
• Very low forward voltage drop
• Improved thermal behavior

Applications:

• Diode for main rectification
• For single and three-phase bridge configurations
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors

Package Details:

• Industry standard outline
• RoHS compliant
• Base plate: Copper internally DCB isolated
• Advanced power cycling

Ratings and Conditions:

• RMS Current: 600 A
• Virtual Junction Temperature: -40°C to 650°C
• Operation Temperature: -40°C to 25°C
• Storage Temperature: -40°C to 25°C

FAQ:

Q: Is the product suitable for all applications?

A: Littelfuse products are not designed for, and may not be used
in, all applications. Users should independently evaluate the
suitability of the product for their own applications.

Q: What is the isolation voltage of the product?

A: The isolation voltage is rated at 4800 V~.

Q: What is the average forward current of the product?

A: The average forward current is rated at 560 A.

Q: What is the forward voltage drop of the product?

A: The forward voltage drop is rated at 0.98 V.

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High Voltage Standard Rectifier Module
Single Diode

MDO500-22N1

VRRM =

I FAV

=

VF

=

2200 V 560 A 0,98 V

Part number
MDO500-22N1

2

3

Backside: isolated

Features / Advantages:
Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour

Applications:
Diode for main rectification For single and three phase
bridge configurations Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors

Package: Y1
Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Base plate: Copper
internally DCB isolated Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

Downloaded from Arrow.com.

Rectifier

Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM

Definition

Conditions

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current

VR = 2200 V

VR = 2200 V

forward voltage drop

IF = 500 A

IF = 1000 A

IF = 500 A

IF = 1000 A

average forward current

TC = 85°C

RMS forward current

180° sine

d = 0.5

threshold voltage slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation max. forward surge current

t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

I²t

value for fusing

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

CJ

junction capacitance

VR = 700 V; f = 1 MHz

MDO500-22N1

TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 140°C TVJ = 25°C
TVJ = 125°C
TVJ = 140°C
TVJ = 140°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 25°C

Ratings

min. typ. max. Unit 2300 V

2200 V

1 mA

30 mA

1,09 V

1,24 V

0,98 V

1,17 V

560 A

A

0,80 V

0,38 m

0,072 K/W

0,024

K/W

1600 W

15,0 kA 16,2 kA 12,8 kA 13,8 kA

1,13 MA²s

1,09 MA²s

812,8 kA²s

788,8 kA²s

576

pF

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

MDO500-22N1

Package Y1

Symbol I RMS TVJ Top Tstg Weight

Definition RMS current virtual junction temperature operation temperature storage temperature

Conditions per terminal

MD M
T
d Spp/App d Spb/Apb V
ISOL

mounting torque

terminal torque

creepage distance on surface | striking distance through air

terminal to terminal terminal to backside

isolation voltage

t = 1 second t = 1 minute

50/60 Hz, RMS; IISOL 1 mA

Ratings

min. typ. max. Unit 600 A

-40

140 °C

-40

125 °C

-40

125 °C

650

g

4,5

7 Nm

11

13 Nm

16,0

mm

25,0

mm

4800

V

4000

V

Production Index (PI)
Date Code (DC)

yywwAA
Part Number
Lot.No: xxxxxx

Circuit

Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36)

Ordering Standard

Ordering Number MDO500-22N1

Marking on Product MDO500-22N1

Delivery Mode Box

Quantity Code No.

2

467219

Similar Part MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500-18N1
MDO500-20N1

Package Y1-2-CU Y1-2-CU Y1-2-CU Y1-2-CU
Y1-2-CU

Voltage class 1200 1400 1600 1800
2000

Equivalent Circuits for Simulation

I V0

R0

Rectifier

V 0 max R0 max

threshold voltage slope resistance *

0,8 0,19

• on die level

T VJ = 140°C
V m

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

Outlines Y1

2x M8

MDO500-22N1

15 ±1

+0 -1,4

43

49

52

10

22.5

35

28.5

38

45 67

50

2

3

6.2 80 92

2

3

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

MDO500-22N1

Rectifier
14000
12000
10000 ITSM
8000 [A] 6000
4000
2000

50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C

107
VR = 0V

I2t 106
A2s

TVJ = 45°C TVJ = 140°C

1000
800 IFAVM 600
[A] 400
200

DC 180° sin 120° 60° 30°

0

0.001

0.01

0.1

1

t [s]

Fig. 1 Surge overload current IFSM: Crest value, t: duration

105

1

10

t [ms] Fig. 2 I2t versus time (1-10 ms)

0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Maximum forward current
at case temperature

1200
1000
800 Ptot
600 [W] 400
200

DC 180° sin 120° 60° 30°

RthKA K/W
0.03 0.07 0.12 0.2 0.3 0.4 0.6

0 0 200 400 600 800 0

25 50 75 100 125 150

IFAVM [A]

TA [°C]

Fig. 4 Power dissipation vs. forward current and ambient temperature

1600

1400

1200

IF 1000 [A] 800
600

400 200

TVJ = 125°C

TVJ = 25°C

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF [V] Fig. 5 Forward current IF versus VF

3200
2800
2400
2000 Ptot
1600 [W] 1200
800
400

RL
Circuit B2 4xMDO500

RthKA K/W
0.015 0.03 0.04 0.05 0.07 0.01 0.14

0 0 300 600 900 1200 0
IdAVM [A]

25 50 75 100 125 150 TA [°C]

Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature. R = resistive load, L = inductive load

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

Downloaded from Arrow.com.

MDO500-22N1

Rectifier
5000
4000 Ptot
3000 [W] 2000
1000

Circuit B6 6xMDO500

RthKA K/W
0.01 0.02 0.03 0.045 0.06 0.08 0.12

0 0 300 600 900 1200 1500 0

25 50 75 100 125 150

IdAVM [A]

TA [°C]

Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature

0.12

0.10

0.08

ZthJC

0.06

[K/W]

30° 60°

0.04

120°

180°

DC

0.02

0.00

10-3

10-2

10-1

100

101

t [s]

Fig. 7 Transient thermal impedance junction to case

RthJC for various conduction angles d:

d

RthJC (K/W)

DC

0.072

180°

0.0768

120°

0.081

60°

0.092

30°

0.111

Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12
102

0.14

0.12

0.10

ZthJK

0.08 0.06

[K/W]

30°

0.04

60° 120°

180°

0.02

DC

0.00

10-3

10-2

10-1

100

101

t [s]

Fig. 8 Transient thermal impedance junction to heatsink

RthJK for various conduction angles d:

d

RthJK (K/W)

DC 0.096

180° 0.1

120° 0.105

60° 0.116

30° 0.135

Constants for ZthJK calculation:
i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 5 0.024 12 102

IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20220914d

Downloaded from Arrow.com.

References

• lot.no
• Product Disclaimer - Littelfuse

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