IXYS MDO500-22N1 High Voltage Standard Rectifier Module Owner’s Manual
- June 1, 2024
- IXYS
Table of Contents
- MDO500-22N1 High Voltage Standard Rectifier Module
- Product Specifications:
- Product Usage Instructions:
- Features and Advantages:
- Applications:
- Package Details:
- Ratings and Conditions:
- Q: Is the product suitable for all applications?
- Q: What is the isolation voltage of the product?
- Q: What is the average forward current of the product?
- Q: What is the forward voltage drop of the product?
MDO500-22N1 High Voltage Standard Rectifier Module
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Product Specifications:
- Part Number: MDO500-22N1
- VRRM: 2200 V
- IFAV: 560 A
- VF: 0.98 V
- Isolation Voltage: 4800 V~
- Package: Y1
Product Usage Instructions:
Features and Advantages:
- Planar passivated chips
- Very low leakage current
- Very low forward voltage drop
- Improved thermal behavior
Applications:
- Diode for main rectification
- For single and three-phase bridge configurations
- Supplies for DC power equipment
- Input rectifiers for PWM inverter
- Battery DC power supplies
- Field supply for DC motors
Package Details:
- Industry standard outline
- RoHS compliant
- Base plate: Copper internally DCB isolated
- Advanced power cycling
Ratings and Conditions:
- RMS Current: 600 A
- Virtual Junction Temperature: -40°C to 650°C
- Operation Temperature: -40°C to 25°C
- Storage Temperature: -40°C to 25°C
FAQ:
Q: Is the product suitable for all applications?
A: Littelfuse products are not designed for, and may not be used
in, all applications. Users should independently evaluate the
suitability of the product for their own applications.
Q: What is the isolation voltage of the product?
A: The isolation voltage is rated at 4800 V~.
Q: What is the average forward current of the product?
A: The average forward current is rated at 560 A.
Q: What is the forward voltage drop of the product?
A: The forward voltage drop is rated at 0.98 V.
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High Voltage Standard Rectifier Module
Single Diode
MDO500-22N1
VRRM =
I FAV
=
VF
=
2200 V 560 A 0,98 V
Part number
MDO500-22N1
2
3
Backside: isolated
Features / Advantages:
Planar passivated chips Very low leakage current Very low forward voltage drop
Improved thermal behaviour
Applications:
Diode for main rectification For single and three phase
bridge configurations Supplies for DC power equipment Input rectifiers for PWM
inverter Battery DC power supplies Field supply for DC motors
Package: Y1
Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Base
plate: Copper
internally DCB isolated Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
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Downloaded from Arrow.com.
Rectifier
Symbol VRSM VRRM IR
VF
I FAV I F(RMS) VF0 rF R thJC R thCH Ptot I FSM
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 2200 V
VR = 2200 V
forward voltage drop
IF = 500 A
IF = 1000 A
IF = 500 A
IF = 1000 A
average forward current
TC = 85°C
RMS forward current
180° sine
d = 0.5
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current
t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ
junction capacitance
VR = 700 V; f = 1 MHz
MDO500-22N1
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 140°C TVJ = 25°C
TVJ = 125°C
TVJ = 140°C
TVJ = 140°C
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 140°C VR = 0 V TVJ = 45°C VR = 0 V TVJ =
140°C VR = 0 V TVJ = 25°C
Ratings
min. typ. max. Unit 2300 V
2200 V
1 mA
30 mA
1,09 V
1,24 V
0,98 V
1,17 V
560 A
A
0,80 V
0,38 m
0,072 K/W
0,024
K/W
1600 W
15,0 kA 16,2 kA 12,8 kA 13,8 kA
1,13 MA²s
1,09 MA²s
812,8 kA²s
788,8 kA²s
576
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
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MDO500-22N1
Package Y1
Symbol I RMS TVJ Top Tstg Weight
Definition RMS current virtual junction temperature operation temperature storage temperature
Conditions per terminal
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
Ratings
min. typ. max. Unit 600 A
-40
140 °C
-40
125 °C
-40
125 °C
650
g
4,5
7 Nm
11
13 Nm
16,0
mm
25,0
mm
4800
V
4000
V
Production Index (PI)
Date Code (DC)
yywwAA
Part Number
Lot.No: xxxxxx
Circuit
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36)
Ordering Standard
Ordering Number MDO500-22N1
Marking on Product MDO500-22N1
Delivery Mode Box
Quantity Code No.
2
467219
Similar Part MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500-18N1
MDO500-20N1
Package Y1-2-CU Y1-2-CU Y1-2-CU Y1-2-CU
Y1-2-CU
Voltage class 1200 1400 1600 1800
2000
Equivalent Circuits for Simulation
I V0
R0
Rectifier
V 0 max R0 max
threshold voltage slope resistance *
0,8 0,19
- on die level
T VJ = 140°C
V m
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
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Outlines Y1
2x M8
MDO500-22N1
15 ±1
+0 -1,4
43
49
52
10
22.5
35
28.5
38
45 67
50
2
3
6.2 80 92
2
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914d
MDO500-22N1
Rectifier
14000
12000
10000 ITSM
8000 [A] 6000
4000
2000
50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C
107
VR = 0V
I2t 106
A2s
TVJ = 45°C TVJ = 140°C
1000
800 IFAVM 600
[A] 400
200
DC 180° sin 120° 60° 30°
0
0.001
0.01
0.1
1
t [s]
Fig. 1 Surge overload current IFSM: Crest value, t: duration
105
1
10
t [ms] Fig. 2 I2t versus time (1-10 ms)
0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Maximum forward current
at case temperature
1200
1000
800 Ptot
600 [W] 400
200
DC 180° sin 120° 60° 30°
RthKA K/W
0.03 0.07 0.12 0.2 0.3 0.4 0.6
0 0 200 400 600 800 0
25 50 75 100 125 150
IFAVM [A]
TA [°C]
Fig. 4 Power dissipation vs. forward current and ambient temperature
1600
1400
1200
IF 1000 [A] 800
600
400 200
TVJ = 125°C
TVJ = 25°C
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF [V] Fig. 5 Forward current IF versus VF
3200
2800
2400
2000 Ptot
1600 [W] 1200
800
400
RL
Circuit B2 4xMDO500
RthKA K/W
0.015 0.03 0.04 0.05 0.07 0.01 0.14
0 0 300 600 900 1200 0
IdAVM [A]
25 50 75 100 125 150 TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature. R = resistive load, L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914d
Downloaded from Arrow.com.
MDO500-22N1
Rectifier
5000
4000 Ptot
3000 [W] 2000
1000
Circuit B6 6xMDO500
RthKA K/W
0.01 0.02 0.03 0.045 0.06 0.08 0.12
0 0 300 600 900 1200 1500 0
25 50 75 100 125 150
IdAVM [A]
TA [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
0.12
0.10
0.08
ZthJC
0.06
[K/W]
30° 60°
0.04
120°
180°
DC
0.02
0.00
10-3
10-2
10-1
100
101
t [s]
Fig. 7 Transient thermal impedance junction to case
RthJC for various conduction angles d:
d
RthJC (K/W)
DC
0.072
180°
0.0768
120°
0.081
60°
0.092
30°
0.111
Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186
0.098 3 0.0432 0.54 4 0.0067 12
102
0.14
0.12
0.10
ZthJK
0.08 0.06
[K/W]
30°
0.04
60° 120°
180°
0.02
DC
0.00
10-3
10-2
10-1
100
101
t [s]
Fig. 8 Transient thermal impedance junction to heatsink
RthJK for various conduction angles d:
d
RthJK (K/W)
DC 0.096
180° 0.1
120° 0.105
60° 0.116
30° 0.135
Constants for ZthJK calculation:
i Rthi (K/W) ti (s) 1 0.0035 0.0054 2 0.0186 0.098 3 0.0432 0.54 4 0.0067 12 5
0.024 12 102
IXYS reserves the right to change limits, conditions and dimensions.
© 2022 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20220914d
Downloaded from Arrow.com.