IXYS DSEI36-06AS Fast Recovery Epitaxial Diode Single Diode Owner’s Manual
- September 27, 2024
- IXYS
Table of Contents
DSEI36-06AS Fast Recovery Epitaxial Diode Single Diode
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Specifications:
- Part Number: DSEI36-06AS
- VRRM (Repetitive Reverse Blocking Voltage): 600 V
- IFAV (Average Forward Current): 30 A
- t rr (Reverse Recovery Time): 35 ns
- Package: TO-263 (D2Pak)
Product Information:
The DSEI36-06AS is a Fast Recovery Epitaxial Diode with the
following features and advantages:
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behavior
- Very low Irm-values
- Very soft recovery behavior
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
Product Usage Instructions:
Installation:
-
Ensure that the diode is properly oriented with the backside
marked as the cathode. -
Mount the diode securely in the TO-263 package.
-
Connect the diode as per the application requirements.
Maintenance:
Regularly check for any signs of damage or overheating. Replace
the diode if any abnormalities are observed.
FAQ:
Q: What is the maximum repetitive reverse blocking voltage of
the DSEI36-06AS diode?
A: The maximum repetitive reverse blocking voltage is 600 V.
Q: What applications is the DSEI36-06AS diode suitable
for?
A: The diode is suitable for use as an antiparallel diode for
high frequency switching devices, antisaturation diode, snubber
diode, free wheeling diode, rectifiers in switch mode power
supplies (SMPS), and uninterruptible power supplies (UPS).
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FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI36-06AS
1 3
2/4
DSEI36-06AS
VRRM =
I FAV
=
t rr
=
600 V 30 A 35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved
thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche
voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low
Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch
mode power
supplies (SMPS) Uninterruptible power supplies (UPS)
Package: TO-263 (D2Pak)
Industry standard outline RoHS compliant Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201012b
Downloaded from Arrow.com.
DSEI36-06AS
Fast Diode
Symbol VRSM VRRM IR VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current forward voltage drop
average forward current
VR = 600 V VR = 480 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TC = 110°C rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz
reverse recovery time
IF = 37 A; VR = 350 V -diF/dt = 200 A/µs
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C
Ratings
min. typ. max. Unit 600 V 600 V 100 µA 7 mA 1.54 V 1.74 V 1.38 V 1.67 V 30 A
TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100
°C
1.10 V
9.1 m
0.8 K/W
0.25
K/W
155 W
300 A
22
pF
5.5
A
9
A
80
ns
150
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201012b
Package TO-263 (D2Pak)
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage
temperature
Conditions
per terminal 1)
FC
mounting force with clip
- IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Product Marking
Part Number
Logo Date Code
Location Lot#
XXXXXXXXX
IXYS yywwZ
123456
DSEI36-06AS
Ratings
min. typ. max. Unit 35 A
-40
150 °C
-40
125 °C
-40
150 °C
1.5
g
20
60 N
Ordering Standard Alternative
Ordering Number DSEI36-06AS-TRL DSEI36-06AS-TUB
Marking on Product DSEI36-06AS-TRL
DSEI36-06AS
Delivery Mode Tape & Reel Tube
Quantity Code No.
800
500059
50
469114
Equivalent Circuits for Simulation
I V0
R0
V 0 max R0 max
threshold voltage slope resistance *
Fast Diode
1.1
6
- on die level
T VJ = 150°C
V m
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201012b
DSEI36-06AS
Outlines TO-263 (D2Pak)
W
A
c2
L1
E
D
A1
123
H
Supplier Option
4
D1
L2
L
2x e
10.92 (0.430)
c
3x b2
2x b
mm (Inches)
E1
9.02 (0.355)
1.78 (0.07)
Dim. Millimeter min max
Inches min max
A 4.06 4.83 0.160 0.190
A1 typ. 0.10
typ. 0.004
A2
2.41
0.095
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
2.5
0.098
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
2,54 BSC
0,100 BSC
e1
4.28
0.169
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
W
typ. 0.02
0.040
typ. 0.0008
0.002
All dimensions conform with
and/or within JEDEC standard.
3.81 (0.150)
3.05 (0.120)
2.54 (0.100)
Recommended min. foot print
1 2/4
3
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201012b
DSEI36-06AS
Fast Diode
60
50
3.0 TVJ = 100°C
VR = 350 V 2.5
40
IF 30
[A] 20
TVJ = 150°C 100°C 25°C
2.0
Qr 1.5
[µC] 1.0
IF = 37 A 74 A 37 A
18.5 A
max.
10
0 0.0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current versus
max. forward voltage drop
0.5 typ.
0.0 1
10
100
-diF /dt [A/µs] Fig. 2 Recovery charge
versus -diF /dt
1000
40 TVJ = 100°C VR = 350 V
30
IRM 20
[A]
IF = 37 A 74 A 37 A
18.5 A
10
max. typ.
0
0
200
400
600
-diF /dt [A/µs] Fig. 3 Peak reverse current
versus -diF /dt
1.4
1.2
1.0 Kf
0.8
IRM 0.6
Qr
0.4
0
40
80 120 160
TJ [°C]
Fig. 4 Dynamic parameters vs. junction temperature
0.6
0.5
0.4 trr
0.3 [µs] 0.2
TVJ = 100°C VR = 350 V
max.
IF = 37 A
74 A 37 A 18.5 A
0.1 typ.
0.0 0
200
400
600
-diF /dt [A/µs] Fig. 5 Recovery time versus -diF /dt
20 16 VFR 12 [V] 8
TVJ = 125°C IF = 37 A
1000
800
tfr
600
[ns] 400
4 VFR
200 tfr
0
0
0
200
400
600
-diF /dt [A/µs] Fig. 6 Peak forward voltage versus -diF /dt
1.0
0.8
0.6 ZthJC
0.4 [K/W] 0.2
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.200
0.0018
2 0.220
0.0100
3 0.080
0.5000
4 0.300
0.0900
0.0 1
10
100
1000
t [ms]
Fig. 7 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201012b
Downloaded from Arrow.com.