IXYS DSEI30-06A Fast Recovery Epitaxial Diode Single Diode Owner’s Manual
- September 27, 2024
- IXYS
Table of Contents
DSEI30-06A Fast Recovery Epitaxial Diode Single Diode
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Specifications:
- Part Number: DSEI30-06A
- VRRM: 600 V
- IFAV: 30 A
- trr: 35 ns
- Package: TO-247
Product Information:
The DSEI30-06A is a Fast Recovery Epitaxial Diode Single Diode
designed for high frequency switching devices and various other
applications. It features planar passivated chips, low leakage
current, very short recovery time, improved thermal behavior, and
low Irm-values. The diode offers avalanche voltage rated for
reliable operation, soft reverse recovery for low EMI/RFI, and
reduced power dissipation within the diode.
Features / Advantages:
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behavior
- Very low Irm-values
- Very soft recovery behavior
Applications:
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Product Usage Instructions:
Installation:
-
Identify the cathode side of the diode (backside).
-
Ensure proper heat dissipation by mounting the diode on a
suitable heatsink. -
Connect the diode as per the application requirements.
Maintenance:
Regularly inspect the diode for any signs of damage or
overheating. Replace the diode if any abnormalities are detected
during operation.
FAQ:
Q: What is the maximum RMS current rating of the DSEI30-06A
diode?
A: The maximum RMS current rating is 70 A.
Q: What is the storage temperature range for the diode?
A: The storage temperature range is -40°C to +120°C.
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FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI30-06A
3
1
DSEI30-06A
VRRM =
I FAV
=
t rr
=
600 V 30 A 35 ns
Backside: cathode
Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved
thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche
voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low
Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch
mode power
supplies (SMPS) Uninterruptible power supplies (UPS)
Package: TO-247
Industry standard outline RoHS compliant Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
Downloaded from Arrow.com.
DSEI30-06A
Fast Diode
Symbol VRSM VRRM IR VF
I FAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current, drain current forward voltage drop
average forward current
VR = 600 V VR = 480 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TC = 110°C rectangular
d = 0.5
VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr
threshold voltage slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation max. forward surge current junction capacitance max. reverse recovery current
t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz
reverse recovery time
IF = 37 A; VR = 350 V -diF/dt = 200 A/µs
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C
Ratings
min. typ. max. Unit 600 V 600 V 100 µA 7 mA 1.52 V 1.71 V 1.36 V 1.64 V 30 A
TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100
°C
1.10 V
8.5 m 0.8 K/W
0.25
K/W
155 W
300 A
22
pF
5.5
A
9
A
80
ns
150
ns
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
Package TO-247
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage
temperature
MD
mounting torque
F C
mounting force with clip
Product Marking
Conditions
per terminal
Logo Part Number
Date Code
Lot# Location
IXYS
XXXXXXXXX yywwZ 1234
DSEI30-06A
Ratings
min. typ. max. Unit 70 A
-40
150 °C
-40
125 °C
-40
150 °C
6
g
0.8
1.2 Nm
20
120 N
Ordering Standard
Ordering Number DSEI30-06A
Marking on Product DSEI30-06A
Delivery Mode Tube
Quantity Code No.
30
434272
Equivalent Circuits for Simulation
I V0
R0
V 0 max R0 max
threshold voltage slope resistance *
Fast Diode
1.1
6
- on die level
T VJ = 150°C
V m
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
Outlines TO-247
E Q
D 2x E2
123
L1 L
A A2
ØP
S
Ø P1 D2
D1
4
E1
2x b2 e
2x b C A1
DSEI30-06A
Sym.
A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1
Inches
min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170
0.216
0.430 BSC 0.780 0.800
– 0.177 0.140 0.144 0.212 0.244
0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053
0.530 –
– 0.29
Millimeter
min. max.
4.70 5.30
2.21 2.59
1.50 2.49
20.79 21.45
15.48 16.24
4.31 5.48
10.92 BSC
19.80 20.30
– 4.49
3.55 3.65
5.38 6.19
6.14 BSC
0.99 1.40
1.65 2.39
2.59 3.43
0.38 0.89
13.07 –
0.51 1.35
13.45
–
– 7.39
3
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
DSEI30-06A
Fast Diode
60
50
40
IF 30
[A] 20
TVJ = 150°C 100°C 25°C
10
3.0 TVJ = 100°C
VR = 350 V 2.5
2.0
Qr 1.5
[µC] 1.0
IF = 37 A 74 A 37 A
18.5 A
max.
0.5
40 TVJ = 100°C VR = 350 V
30
IRM 20
[A]
IF = 37 A max. 74 A 37 A
18.5 A
10
0 0.0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF
0.0 1
10
100
-diF /dt [A/µs]
1000
Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt
0
0
200
400
600
-diF /dt [A/µs]
Fig. 3 Typ. peak reverse current IRM versus -diF /dt
1.4
0.6
TVJ = 100°C
VR = 350 V
1.2
0.5
1.0 Kf
0.8
0.4
trr 0.3
[µs] 0.2
max.
IF = 37 A 74 A 37 A
18.5 A
IRM
0.6
0.1
Qr
0.4 0
40
80 120 160
0.0 0
200
400
600
TVJ [°C]
-diF /dt [A/µs]
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
Fig. 5 Typ. recovery time trr versus -diF /dt
20 16 VFR 12 [V] 8
TVJ = 125°C IF = 37 A
1000
800
tfr
600
[ns] 400
4 VFR
200 tfr
0
0
0
200
400
600
-diF /dt [A/µs]
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt
1.0
0.8
0.6 ZthJC
0.4 [K/W] 0.2
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.200
0.0018
2 0.220
0.0100
3 0.080
0.5000
4 0.300
0.0900
0.0 1
10
100
1000
t [ms]
Fig. 7 Transient thermal impedance junction to case
10000
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20201009b
Downloaded from Arrow.com.
References
Read User Manual Online (PDF format)
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