IXYS DSEI30-06A Fast Recovery Epitaxial Diode Single Diode Owner’s Manual

September 27, 2024
IXYS

DSEI30-06A Fast Recovery Epitaxial Diode Single Diode

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Specifications:

  • Part Number: DSEI30-06A
  • VRRM: 600 V
  • IFAV: 30 A
  • trr: 35 ns
  • Package: TO-247

Product Information:

The DSEI30-06A is a Fast Recovery Epitaxial Diode Single Diode
designed for high frequency switching devices and various other
applications. It features planar passivated chips, low leakage
current, very short recovery time, improved thermal behavior, and
low Irm-values. The diode offers avalanche voltage rated for
reliable operation, soft reverse recovery for low EMI/RFI, and
reduced power dissipation within the diode.

Features / Advantages:

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behavior
  • Very low Irm-values
  • Very soft recovery behavior

Applications:

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Product Usage Instructions:

Installation:

  1. Identify the cathode side of the diode (backside).

  2. Ensure proper heat dissipation by mounting the diode on a
    suitable heatsink.

  3. Connect the diode as per the application requirements.

Maintenance:

Regularly inspect the diode for any signs of damage or
overheating. Replace the diode if any abnormalities are detected
during operation.

FAQ:

Q: What is the maximum RMS current rating of the DSEI30-06A

diode?

A: The maximum RMS current rating is 70 A.

Q: What is the storage temperature range for the diode?

A: The storage temperature range is -40°C to +120°C.

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FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI30-06A

3

1

DSEI30-06A

VRRM =

I FAV

=

t rr

=

600 V 30 A 35 ns

Backside: cathode

Features / Advantages:
Planar passivated chips Low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces:
– Power dissipation within the diode – Turn-on loss in the commutating switch

Applications:
Antiparallel diode for high frequency switching devices
Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power
supplies (SMPS) Uninterruptible power supplies (UPS)

Package: TO-247
Industry standard outline RoHS compliant Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Downloaded from Arrow.com.

DSEI30-06A

Fast Diode

Symbol VRSM VRRM IR VF
I FAV

Definition

Conditions

max. non-repetitive reverse blocking voltage

max. repetitive reverse blocking voltage

reverse current, drain current forward voltage drop
average forward current

VR = 600 V VR = 480 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TC = 110°C rectangular

d = 0.5

VF0 rF R thJC R thCH Ptot I FSM CJ I RM
t rr

threshold voltage slope resistance

for power loss calculation only

thermal resistance junction to case

thermal resistance case to heatsink

total power dissipation max. forward surge current junction capacitance max. reverse recovery current

t = 10 ms; (50 Hz), sine; VR = 0 V VR = 600 V f = 1 MHz

reverse recovery time

IF = 37 A; VR = 350 V -diF/dt = 200 A/µs

TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
TVJ = 150 °C
TVJ = 150°C

Ratings
min. typ. max. Unit 600 V 600 V 100 µA 7 mA 1.52 V 1.71 V 1.36 V 1.64 V 30 A

TVJ = 150°C
TC = 25°C TVJ = 45°C TVJ = 25°C TVJ = 25 °C TVJ = 100 °C TVJ = 25 °C TVJ = 100 °C

1.10 V

8.5 m 0.8 K/W

0.25

K/W

155 W

300 A

22

pF

5.5

A

9

A

80

ns

150

ns

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Package TO-247

Symbol I RMS TVJ Top Tstg Weight

Definition
RMS current virtual junction temperature operation temperature storage temperature

MD

mounting torque

F C

mounting force with clip

Product Marking

Conditions
per terminal

Logo Part Number
Date Code
Lot# Location

IXYS
XXXXXXXXX yywwZ 1234

DSEI30-06A

Ratings

min. typ. max. Unit 70 A

-40

150 °C

-40

125 °C

-40

150 °C

6

g

0.8

1.2 Nm

20

120 N

Ordering Standard

Ordering Number DSEI30-06A

Marking on Product DSEI30-06A

Delivery Mode Tube

Quantity Code No.

30

434272

Equivalent Circuits for Simulation

I V0

R0

V 0 max R0 max

threshold voltage slope resistance *

Fast Diode
1.1
6

  • on die level

T VJ = 150°C
V m

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Outlines TO-247
E Q
D 2x E2
123
L1 L

A A2

ØP

S

Ø P1 D2
D1
4

E1

2x b2 e

2x b C A1

DSEI30-06A

Sym.
A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1

Inches
min. max. 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216
0.430 BSC 0.780 0.800
– 0.177 0.140 0.144 0.212 0.244
0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 –
– 0.29

Millimeter

min. max.

4.70 5.30

2.21 2.59

1.50 2.49

20.79 21.45

15.48 16.24

4.31 5.48

10.92 BSC

19.80 20.30

– 4.49

3.55 3.65

5.38 6.19

6.14 BSC

0.99 1.40

1.65 2.39

2.59 3.43

0.38 0.89

13.07 –

0.51 1.35

13.45

– 7.39

3

1

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

DSEI30-06A

Fast Diode
60

50

40
IF 30
[A] 20

TVJ = 150°C 100°C 25°C

10

3.0 TVJ = 100°C
VR = 350 V 2.5

2.0
Qr 1.5
[µC] 1.0

IF = 37 A 74 A 37 A
18.5 A

max.

0.5

40 TVJ = 100°C VR = 350 V
30

IRM 20
[A]

IF = 37 A max. 74 A 37 A
18.5 A

10

0 0.0 0.5 1.0 1.5 2.0
VF [V] Fig. 1 Forward current IF versus max. forward voltage drop VF

0.0 1

10

100

-diF /dt [A/µs]

1000

Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt

0

0

200

400

600

-diF /dt [A/µs]

Fig. 3 Typ. peak reverse current IRM versus -diF /dt

1.4

0.6

TVJ = 100°C

VR = 350 V

1.2

0.5

1.0 Kf
0.8

0.4
trr 0.3
[µs] 0.2

max.

IF = 37 A 74 A 37 A
18.5 A

IRM

0.6

0.1

Qr

0.4 0

40

80 120 160

0.0 0

200

400

600

TVJ [°C]

-diF /dt [A/µs]

Fig. 4 Dynamic parameters Qr, IRM versus TVJ

Fig. 5 Typ. recovery time trr versus -diF /dt

20 16 VFR 12 [V] 8

TVJ = 125°C IF = 37 A

1000
800
tfr
600
[ns] 400

4 VFR

200 tfr

0

0

0

200

400

600

-diF /dt [A/µs]

Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt

1.0

0.8
0.6 ZthJC
0.4 [K/W] 0.2

Constants for ZthJC calculation:

i Rthi (K/W)

ti (s)

1 0.200

0.0018

2 0.220

0.0100

3 0.080

0.5000

4 0.300

0.0900

0.0 1

10

100

1000

t [ms]

Fig. 7 Transient thermal impedance junction to case

10000

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20201009b

Downloaded from Arrow.com.

References

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