IXYS DSEP12-12A HiPerFRED High Performance Fast Recovery Diode User Guide
- June 1, 2024
- IXYS
Table of Contents
IXYS DSEP12-12A HiPerFRED High Performance Fast Recovery Diode
Specifications:
- Part Number: DSEP12-12A
- VRRM (Repetitive Reverse Blocking Voltage): 1200 V
- IFAV (Average Forward Current): 12 A
- trr (Reverse Recovery Time): 40 ns
- Package: TO-220
Product Information
- The HiPerFRED DSEP12-12A is a high-performance fast recovery diode with low loss and soft recovery characteristics. It features planar passivated chips, very low leakage current, very short recovery time, improved thermal behavior, soft recovery behavior, and avalanche voltage rated for reliable operation.
- The diode is suitable for applications such as antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free-wheeling diode, and rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
Product Usage Instructions
Installation:
- Ensure proper heat dissipation by mounting the diode on a suitable heatsink.
- Connect the cathode side of the diode as per the backside indication.
- Follow industry standard guidelines for component placement and soldering.
Application:
When using the DSEP12-12A diode in high frequency switching devices or
power supplies, ensure to operate within the specified voltage and current
limits to prevent damage.
Maintenance:
Periodically check for any signs of overheating or physical damage. Replace
the diode if any abnormalities are observed.
FAQ:
-
Q: What is the maximum RMS current rating for the DSEP12-12A diode?
A: The maximum RMS current rating for the diode is 35 A. -
Q: Can the DSEP12-12A diode be used in UPS systems?
A: Yes, the diode is suitable for use in uninterruptible power supplies (UPS).
DSEP12-12A
HiPerFRED
- RRM = 1200 V
- LEAV = 12 A
- trr = 40 ns
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DSEP12-12A
Features / Advantages
- Planar passivated chips
- Very low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-220
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Fast Diode
| Fast Diode | Ratings |
|---|---|
| Symbol | Definition Conditions |
| max. | Unit |
| V RSM | max. non-repetitive reverse blocking voltage |
| 1200 | |
| V RRM | max. repetitive reverse blocking voltage |
| 1200 | V |
| I R | reverse current, drain current VR = 1200 V |
µA
| VR = 1200 V| TVJ = 150°C| 0.5| mA
V F **forward voltage drop| IF = 15 A| TVJ = 25°C| | |
2.62| V
| IF = 30 A| | 3.19| V
| IF = 15 A| TVJ 150 °C| | | 1.87| V
| IF = 30 A| | 2.56| V
I FAV**| average forward current TC = 135°C
rectangular d = 0.5
| TVJ = 175°C| | | 12| A
V F0 r F| threshold voltage for power loss calculation only
slope resistance| TVJ = 175°C| | | 1.03| V
46| mΩ
R thJC| thermal resistance junction to case| | | | 1.6| K/W
R thCH| thermal resistance case to heatsink| | | 0.50| | K/W
P tot| total power dissipation| TC = 25°C| | | 95| W
I FSM **max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V
TVJ = 45°C| | | 90| A
C J| junction capacitance VR = 600 V f = 1 MHz| TVJ = 25°C| | 5| | pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 6| | A
| IF = 15 A; VR = 600 V| TVJ = 100 °C| 9| A
t rr| reverse recovery time -diF/dt = 200 A/µs| TVJ = 25 °C| | 40|
| ns
| | TVJ = 100 °C| 140| ns
Package| TO- 220| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.|
max.| Unit
I RMS| RMS current| per terminal| | | 35| A
T VJ| virtual junction temperature| | -55| | 175| °C
T op| operation temperature| | -55| | 150| °C
T stg| storage temperature| | -55| | 150| °C
Weight| | 2| | g
M D| mounting torque| | 0.4| | 0.6| Nm
F C**| mounting force with clip| | 20| 60| N
Product Marking
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEP12-12A| DSEP12-12A| Tube| 50| 470465
Similar Part| Package| Voltage class
---|---|---
DSEP12-12B| TO-220AC (2)| 1200
DSEP15-12CR| ISOPLUS247 (2)| 1200
Outlines TO-220
| Dim. | Millimeter Min. Max. | Inches Min. Max. |
|---|---|---|
| A | 4.32 | 4.82 |
| A1 | 1.14 | 1.39 |
| A2 | 2.29 | 2.79 |
| b | 0.64 | 1.01 |
| b2 | 1.15 | 1.65 |
| C | 0.35 | 0.56 |
| D | 14.73 | 16.00 |
| E | 9.91 10.66 | 0.390 0.420 |
| e | 5.08 BSC | 0.200 BSC |
| H1 | 5.85 6.85 | 0.230 0.270 |
| L | 12.70 | 13.97 |
| L1 | 2.79 | 5.84 |
| ØP | 3.54 | 4.08 |
| Q | 2.54 | 3.18 |
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
Documents / Resources
| IXYS
DSEP12-12A HiPerFRED High Performance Fast Recovery
Diode
[pdf] User Guide
DSEP12-12A HiPerFRED High Performance Fast Recovery Diode, DSEP12-12A,
HiPerFRED High Performance Fast Recovery Diode, High Performance Fast Recovery
Diode, Performance Fast Recovery Diode, Fast Recovery Diode, Recovery Diode,
Diode
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