IXYS DSEI30-10A FRED Fast Recovery Epitaxial And Single Diode User Guide
- June 1, 2024
- IXYS
Table of Contents
IXYS DSEI30-10A FRED Fast Recovery Epitaxial And Single Diode
Product Specifications
- Part Number: DSEI30-10A
- VRRM (Repetitive Reverse Blocking Voltage): 1000 V
- IFAV (Average Forward Current): 30 A
- trr (Reverse Recovery Time): 45 ns
- Package: TO-247
Product Features
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behavior
- Soft recovery behavior for low EMI/RFI
- RoHS compliant and UL 94V-0 epoxy
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Product Usage Instructions
Installation
- Ensure the device is powered off and disconnected from the power source.
- Select a suitable location for the diode installation within the circuit.
- Mount the TO-247 package securely using appropriate mounting hardware.
Connection
- Connect the cathode side of the diode as per the backside indication.
- Ensure proper polarity when connecting to other components in the circuit.
Operation
- Apply the specified voltage and current ratings within the operating limits.
- Monitor the performance of the diode during operation for any abnormalities.
Frequently Asked Questions (FAQ)
-
Q: What are the primary applications of the DSEI30-10A diode?
A: The primary applications include serving as an antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free wheeling diode, rectifiers in SMPS, and UPS. -
Q: What is the voltage rating of the DSEI30-10A diode?
A: The repetitive reverse blocking voltage (VRRM) of the DSEI30-10A diode is rated at 1000 V. -
Q: How should I connect the DSEI30-10A diode in a circuit?
A: Connect the cathode side of the diode as indicated on the backside of the device. Ensure proper polarity when connecting to other components.
DSEI30-10A
FRED
Fast Recovery Epitaxial Diode Single Diode
Part number
DSEI30-10A
Features / Advantages:
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package: TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
| Package | TO-247 | Ratings |
|---|---|---|
| Symbol | Definition | Conditions |
| max. | Unit | |
| I RMS | RMS current | per terminal |
| T VJ | virtual junction temperature | |
| T op | operation temperature | |
| T stg | storage temperature | |
| Weight | 6 | |
| M D | mounting torque |
F
C
| mounting force with clip| | 20| 120| N
Product Marking
Ordering| Ordering Number| Marking on Product| Delivery
Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI30-10A| DSEI30-10A| Tube| 30| 434477
Similar Part| Package| Voltage class
---|---|---
DSEI30-10AR| ISOPLUS247 (2)| 1000
DSEI30-12A| TO-247AD (2)| 1200
Outlines TO-247
Sym.| Inches
min. max.
| Millimeter min. max.
---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31 5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| – 0.177| – 4.49
Ø P| 0.140 0.144| 3.55 3.65
Q| 0.212 0.244| 5.38 6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
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