IXYS DSEI30-10A FRED Fast Recovery Epitaxial And Single Diode User Guide

June 1, 2024
IXYS

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IXYS DSEI30-10A FRED Fast Recovery Epitaxial And Single Diode

Product Specifications

  • Part Number: DSEI30-10A
  • VRRM (Repetitive Reverse Blocking Voltage): 1000 V
  • IFAV (Average Forward Current): 30 A
  • trr (Reverse Recovery Time): 45 ns
  • Package: TO-247

Product Features

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behavior
  • Soft recovery behavior for low EMI/RFI
  • RoHS compliant and UL 94V-0 epoxy

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Product Usage Instructions

Installation

  1. Ensure the device is powered off and disconnected from the power source.
  2. Select a suitable location for the diode installation within the circuit.
  3. Mount the TO-247 package securely using appropriate mounting hardware.

Connection

  1. Connect the cathode side of the diode as per the backside indication.
  2. Ensure proper polarity when connecting to other components in the circuit.

Operation

  1. Apply the specified voltage and current ratings within the operating limits.
  2. Monitor the performance of the diode during operation for any abnormalities.

Frequently Asked Questions (FAQ)

  • Q: What are the primary applications of the DSEI30-10A diode?
    A: The primary applications include serving as an antiparallel diode for high frequency switching devices, antisaturation diode, snubber diode, free wheeling diode, rectifiers in SMPS, and UPS.

  • Q: What is the voltage rating of the DSEI30-10A diode?
    A: The repetitive reverse blocking voltage (VRRM) of the DSEI30-10A diode is rated at 1000 V.

  • Q: How should I connect the DSEI30-10A diode in a circuit?
    A: Connect the cathode side of the diode as indicated on the backside of the device. Ensure proper polarity when connecting to other components.

DSEI30-10A

FRED

Fast Recovery Epitaxial Diode Single Diode

Part number
DSEI30-10A

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Features / Advantages:

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package: TO-247

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

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Package TO-247 Ratings
Symbol Definition Conditions
max. Unit
I RMS RMS current per terminal
T VJ virtual junction temperature
T op operation temperature
T stg storage temperature
Weight 6
M D mounting torque

F

C

| mounting force with clip| | 20| 120| N

Product Marking

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI30-10A| DSEI30-10A| Tube| 30| 434477
Similar Part| Package| Voltage class
---|---|---
DSEI30-10AR| ISOPLUS247 (2)| 1000
DSEI30-12A| TO-247AD (2)| 1200

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Outlines TO-247

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Sym.| Inches

min.       max.

| Millimeter min.      max.
---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31     5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| –       0.177| –        4.49
Ø P| 0.140 0.144| 3.55     3.65
Q| 0.212 0.244| 5.38     6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39

Fast Diode

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IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2020 IXYS all rights reserved
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References

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