IXYS CLA100E1200KB High Efficiency Thyristor User Guide

IXYS CLA100E1200KB High-Efficiency Thyristor

Product Specifications

• Part Number: CLA100E1200KB
• VRRM: 1200 V
• ITAV: 100 A
• VT: 1.34 V
• Package: TO-264

Product Usage Instructions

Features/Advantages

• Thyristor for line frequency
• Planar passivated chip
• Long-term stability

Applications

• Line rectifying 50/60 Hz
• Softstart AC motor control
• DC Motor control
• Power converter
• AC power control
• Lighting and temperature control

Package Information

• Industry-standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

FAQs

1. Can this thyristor be used for DC motor control?
   • Yes, this thyristor is suitable for DC motor control applications.
2. What is the maximum average forward current this thyristor can handle?
   • The maximum average forward current is 100 A.
3. Is the package TO-264 industry standard?
   • Yes, the package is TO-264, which is an industry-standard outline.

High-Efficiency Thyristor

• V RRM = 1200V
• I TAV = 100A
• VT = 1.34 V
• Part number
  • CLA100E1200KB
• Features / Advantages:
  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
• Applications:
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control
• Package: TO-264
  • Industry-standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Thyristor

Unit
V RSM/DSM| max. non-repetitive reverse/forward blocking voltage TVJ = 25°C|  |  | 1300| V
V RRM/DRM| max. repetitive reverse/forward blocking voltage TVJ = 25°C|  |  | 1200| V
I R/D| reverse current, drain current VR/D = 1200 V TVJ = 25°C|  |  | 10| µA
 | VR/D = 1200 V                                               TVJ = 125°C| 5| mA
V T **forward voltage drop| IT = 100 A TVJ = 25°C|  |  | 1.37| V
 | I T = 200 A| 1.78| V
 | IT = 100 A                                                  TVJ = 125 °C| |  | 1.34| V
 | I T = 200 A| 1.85| V
I TAV| average forward current TC = 105°C TVJ = 150°C|  |  | 100| A
I T(RMS)| RMS forward current 180° sine| 160| A
V T0**

r T

| threshold voltage TVJ = 150°C

for power loss calculation only

slope resistance

|  |  | 0.82| V
5.2| mΩ
R thJC| thermal resistance junction to case|  |  | 0.2| K/W
R thCH| thermal resistance case to heatsink|  | 0.15|  | K/W
Plot| total power dissipation TC  = 25°C|  |  | 625| W
I TSM **max. forward surge current| t = 10 ms; (50 Hz), sine TVJ = 45°C|  |  | 1.10| kA
 | t = 8,3 ms; (60 Hz), sine                           VR = 0 V| 1.19| kA
 | t = 10 ms; (50 Hz), sine                           TVJ = 150°C|  |  | 935| A
 | t = 8,3 ms; (60 Hz), sine                           VR = 0 V| 1.01| kA
I²t **value for fusing| t = 10 ms; (50 Hz), sine TVJ = 45°C|  |  | 6.05| kA²s
 | t = 8,3 ms; (60 Hz), sine                           VR = 0 V| 5.89| kA²s
 | t = 10 ms; (50 Hz), sine                           TVJ = 150°C|  |  | 4.37| kA²s
 | t = 8,3 ms; (60 Hz), sine                           VR = 0 V| 4.25| kA²s
C J| junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C|  | 43|  | pF
P GM| max. gate power dissipation tP =  30 µs TC  = 150°C|  |  | 10| W
 | tP = 300 µs| 1| W
GAV| average gate power dissipation| 0.5| W
(di/dt) cr| critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 300 A|  |  | 150| A/µs
 | tP = 200 µs; diG /dt =0.45 A/µs;|  |
 | IG = 0.45 A; V = ⅔ VDRM          non-repet., IT = 100 A| 500| A/µs
(DV/dt) cr| critical rate of rise of voltage V = ⅔ VDRM TVJ = 150°C

R GK = ∞; method 1 (linear voltage rise)

|  |  | 1000| V/µs
V GT| gate trigger voltage VD = 6 V TVJ = 25°C|  |  | 1.5| V
 | TVJ = -40°C| 1.6| V
I GT| gate trigger current VD = 6 V TVJ = 25°C| 40| mA
 | TVJ = -40°C| 80| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM TVJ = 150°C|  |  | 0.2| V
I GD| gate non-trigger current| 5| mA
I L| latching current t p =     10 µs TVJ = 25 °C

IG = 0.45 A; diG/dt = 0.45 A/µs

|  |  | 150| mA
I H| holding current VD = 6 V RGK = ∞ TVJ = 25 °C|  |  | 100| mA
t gd| gate controlled delay time VD = ½ VDRM TVJ = 25 °C

IG =  0.5 A; diG/dt =     0.5 A/µs

|  |  | 2| µs
t q| turn-off time VR = 100 V; IT = 100A; V = ⅔ VDRM TVJ 125 °C

di/dt = 10 A/µs dv/dt =      20 V/µs tp = 200 µs

|  | 150|  | µs
Package| TO- 264| Ratings
---|---|---
Symbol| Definition| Conditions| min.| Typ.| max.| Unit
I RMS| RMS current| per terminal|  |  | 70| A
T VJ| virtual junction temperature|  | -40|  | 150| °C
T op| operation temperature|  | -40|  | 125| °C
T stg| storage temperature|  | -40|  | 150| °C
Weight|  | 10|  | g
M D| mounting torque|  | 0.8|  | 1.2| Nm
F C| mounting force with clip|  | 20| 120| N

Part description

• C = Thyristor (SCR)
• L = High-Efficiency Thyristor
• A = (up to 1200V)
• 100 = Current Rating [A]
• E = Single Thyristor
• 1200 = Reverse Voltage [V]
• KB = TO-264 (3)

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA100E1200KB| CLA100E1200KB| Tube| 25| 514750
Similar Part| Package| Voltage class
---|---|---
CLA100E1200HB| TO-247AD (3)| 1200

Dimension

Outlines TO-264

Thyristor

Disclaimer Notice

• The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their applications.
• Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
• IXYS reserves the right to change limits, conditions, and dimensions.
• Data according to IEC 60747and per semiconductor unless otherwise specified
• © 2021 IXYS all rights reserved
• Downloaded from Arrow.com.

References

• Product Disclaimer - Littelfuse

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