IXYS MDNA3High Voltage Standard Rectifier Module Owner’s Manual

: August 16, 2024
: IXYS

Table of Contents

IXYS MDNA3High Voltage Standard Rectifier Module
Part description
Outlines E2-Pack
Rectifier
Brake IGBT + Diode
References
Read User Manual Online (PDF format)
Download This Manual (PDF format)

IXYS MDNA3High Voltage Standard Rectifier Module

Part number
MDNA360UB2200PTED

3~ Rectifier	Brake Chopper
VRRM = 2200 V	VCES = 1700 V
IDAV = 360 A	IC25 = 200 A
IFSM = 1900 A	VCE(sat) = 2,1 V

Features / Advantages:
Brake with Infineon IGBT³

Applications
3~ Rectifier with brake unit for drive inverters

Package: E2-Pack

Isolation Voltage: 4 3 0 0 V~
Industry standard outline
RoHS compliant
PressFit-Pins for PCB mounting
Height: 17 mm
Base plate: Copper internally DCB isolated
Advanced power cycling
Phase Change Material available

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics

Rectifier	Ratings
Symbol	Definition Conditions
max.	Unit
V RSM	max. non-repetitive reverse blocking voltage
	2300
V RRM	max. repetitive reverse blocking voltage
2200	V
I R	reverse current VR = 2200 V
	VR = 2200 V
V F ****forward voltage drop	IF = 120 A
TVJ = 25°C
	IF = 360 A
	IF = 120 A
TVJ = 125°C
	IF = 360 A
I DAV	bridge output current TC = 85°C

rectangular d = ⅓

| TVJ = 150°C| | | 360| A
V F0

r F

| threshold voltage

for power loss calculation only

slope resistance

| TVJ = 150°C| | | 0,82| V
3,4| mΩ
R thJC| thermal resistance junction to case| | | | 0,25| K/W
R thCH| thermal resistance case to heatsink| | | 0,1| | K/W
P tot| total power dissipation| TC = 25°C| | | 500| W
I FSM **max. forward surge current| t = 10 ms; (50 Hz), sine TVJ = 45°C| | | 1,90| kA
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 2,05| kA
| t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 1,62| kA
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 1,75| kA
I²t **value for fusing| t = 10 ms; (50 Hz), sine TVJ = 45°C| | | 18,1| kA²s
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 17,5| kA²s
| t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 13,0| kA²s
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 12,7| kA²s
C J| junction capacitance VR = 400 V; f = 1 MHz| TVJ = 25°C| | 73| | pF
Brake IGBT + Diode| Ratings
---|---
Symbol| Definition| Conditions| | | min.| typ.| max.| Unit
V CES| collector emitter voltage| | TVJ| = 25°C| | | 1700| V
V GES| max. DC gate voltage| | | | | | ±20| V
V GEM| max. transient gate emitter voltage| | | | ±30| V
I C25| collector current| | TC| = 25°C| | | 200| A
I C100| | | TC| = 100°C| 135| A
P tot| total power dissipation| | TC| = 25°C| | | 935| W
V CE(sat)| collector emitter saturation voltage| IC = 150 A; VGE = 15 V| TVJ| = 25°C| | 2,1| 2,8| V
| | | TVJ| = 125°C| 3,2| | V
V GE(th)| gate emitter threshold voltage| IC = 4 mA; VGE = VCE| TVJ| = 25°C| 5,5| 6,0| 6,5| V
I CES| collector emitter leakage current| VCE = VCES; VGE = 0 V| TVJ

TVJ

| = 25°C

= 125°C

| |

2,3

| 0,12| mA

mA

t r

t d(off) t f E on

E off

| turn-on delay time current rise time turn-off delay time current fall time

turn-on energy per pulse

turn-off energy per pulse

|

inductive load

VCE 900 V; IC = 150 A VGE = ±15 V; RG = 10 Ω

|

TVJ

|

= 125°C

| | 120| | ns
80| ns
400| ns
150| ns
45| mJ
50| mJ
RBSOA

I CM

| reverse bias safe operating area| VGE = ±15 V; RG = 10 Ω

VCEK = 1700 V

| TVJ| = 125°C| | |

280

|

A

1700

|

V

Brake Diode
V RRM| max. repetitive reverse voltage| | TVJ| = 25°C
I F25| forward current| | TC| = 25°C| | | 145| A
I F100| | | TC| = 100°C| 90| A
V F| forward voltage| IF = 100 A| TVJ

TVJ

| = 25°C

= 125°C

| |

2,00

| 2,20| V

V

I R| reverse current| VR = VRRM| TVJ

TVJ

| = 25°C

= 125°C

| | | tbd

tbd

| mA

mA

Q rr| reverse recovery charge| VR = 900 V| | | | 30| | µC
I RM| max. reverse recovery current| -diF /dt = 2500A/µs| TVJ| = 125°C| 60| A
t rr| reverse recovery time| IF = 100 A; VGE = 0 V| | | 200| ns
E rec| reverse recovery energy| | | | 11| mJ
R thJC| thermal resistance junction to case| | | | | | 0,39| K/W
R thCH| thermal resistance case to heatsink| | | | | 0,62| | K/W
Package E2-Pack| Ratings
---|---
Symbol Definition Conditions| min.| typ.| max.| Unit
I RMS **RMS current per terminal| | | 30| A
T VJ **virtual junction temperature| -40| | 150| °C
T op **operation temperature| -40| | 125| °C
T stg **storage temperature| -40| | 125| °C
Weight| | 176| | g
M D **mounting torque| 3| | 6| Nm
d Spp/App **terminal to terminal

creepage distance on surface | striking distance through air

d Spb/Apb ****terminal to backside

| 6,0

12,0

| | | mm

mm

V ****isolation voltage t = 1 second

ISOL **** 50/60 Hz, RMS; IISOL ≤ 1 mA

t = 1 minute

| 4300

3600

| | | V

V

Part description

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| MDNA360UB2200PTED| MDNA360UB2200PTED| Blister| 28| 515682
Alternative| MDNA360UB2200PTED-PC| MDNA360UB2200PTED| Blister| 28| 514541

Temperature Sensor NTC

Symbol| Definition| Conditions| min.| typ.| max.| Unit
---|---|---|---|---|---|---
R 25 B 25/50| resistance