IXYS MCC162-18io1 Thyristor Module Owner’s Manual

IXYS MCC162-18io1 Thyristor Module

Specifications

• Part Number: MCC162-18io1
• Max. Non-Repetitive Reverse/Forward Blocking Voltage (VRSM/DSM ): 1900 V
• Max. Repetitive Reverse/Forward Blocking Voltage (VRRM/DRM): 1800 V
• Average Forward Current (ITAV): 181 A
• Forward Voltage Drop (VT ): 1.03 V
• Isolation Voltage: 3600 V~
• Package: Y4
• Industry Standard Outline, RoHS Compliant

Product Usage Instructions

Features and Advantages

• Thyristor for line frequency
• Planar passivated chip
• Long-term stability
• Direct Copper Bonded Al2O3-ceramic

Applications

• Line rectifying 50/60 Hz
• Softstart AC motor control
• DC Motor control
• Power converter
• AC power control
• Lighting and temperature control

Package Details

• Soldering pins for  PCB mounting
• Base plate: DCB ceramic
• Reduced: weight
• Advanced: power cycling

Disclaimer Notice

• The information furnished is believed to be accurate and reliable.
• Users should independently evaluate the suitability of each product for their applications. Littelfuse products are not designed for all applications.

Thyristor Module

• V RRM= 2x 1800 V
• “TAV= 181 A
• VT= 1.03 V

Part number
MCC162-18io1

Features / Advantages

• Thyristor for line frequency
• Planar passivated chip
• Long-term stability
• Direct Copper Bonded Al2O3-ceramic

Applications

• Line rectifying 50/60 Hz
• Softstart AC motor control
• DC Motor control
• Power converter
• AC power control
• Lighting and temperature control

Package: Y4

• Isolation Voltage: 3 6 0 0 V~
• Industry-standard outline
• RoHS compliant
• Soldering pins for PCB mounting
• Base plate : DCB ceramic
• Reduced weight
• Advanced power cycling

Disclaimer Notice
The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their applications. Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Specification

A
I T(RMS)| RMS forward current 180° sine| | | 300| A
V T0

r T

| threshold voltage

for power loss calculation only

slope resistance

| | TVJ = 125°C| | | 0.88| V
1.15| mΩ
R thJC| thermal resistance junction to case| | | | | 0.155| K/W
R thCH| thermal resistance case to heatsink| | | | 0.07| | K/W
Plot| total power dissipation| | TC = 25°C| | | 645| W
I TSM max. forward surge current| t =  10 ms; (50 Hz), sine TVJ = 45°C| | | 6.00| kA
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 6.48| kA
| t =  10 ms; (50 Hz), sine                          TVJ = 125°C| | | 5.10| kA
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 5.51| kA
I²t value for fusing| t =  10 ms; (50 Hz), sine TVJ = 45°C| | | 180.0| kA²s
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 174.7| kA²s
| t =  10 ms; (50 Hz), sine                          TVJ = 125°C| | | 130.1| kA²s
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 126.3| kA²s
C J| junction capacitance VR = 400 V f = 1 MHz| | TVJ = 25°C| | 273| | pF
P GM| max. gate power dissipation tP = 30 µs| | TC = 125°C| | | 120| W
| tP = 500 µs| | | 60| W
GAV| average gate power dissipation| | | 8| W
(di/dt) cr| critical rate of rise of current TVJ = 125 °C; f = 50 Hz

t = 200 µs; di /dt = 0.5

|

A/µs;

| repetitive, IT = 540 A| | | 150| A/µs
IG =    0.5 A; V  = ⅔ VDRM                non-repet., IT = 180 A| | |

500

|

A/µs

(dv/dt) cr critical rate of rise of voltage V  =  ⅔ VDRM TVJ = 125°C

R GK = ∞; method 1 (linear voltage rise)

| | | 1000| V/µs
V GT| gate trigger voltage VD = 6 V| | TVJ = 25°C| | | 2.5| V
| | | TVJ = -40°C| 2.6| V
I GT| gate trigger current VD = 6 V| | TVJ = 25°C| 150| mA
| | | TVJ = -40°C| 200| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM| | TVJ = 125°C| | | 0.2| V
I GD| gate non-trigger current| | | 10| mA
I L latching current t p  =     30 µs TVJ = 25 °C

IG    =    0.5 A; diG /dt = 0.5 A/µs

| | | 300| mA
I H| holding current VD = 6 V RGK = ∞| | TVJ = 25 °C| | | 200| mA
the gate controlled delay time VD   = ½ VDRM TVJ = 25 °C

IG     =   0.5 A; diG /dt =    0.5 A/µs

| | | 2| µs
t q turn-off time VR = 100 V; IT = 300A; V = ⅔ VDRM  TVJ 100 °C

di/dt =   10 A/µs dv/dt =     20 V/µs tp = 200 µs

| | 150| | µs
Package     Y4| Ratings
---|---
Symbol| Definition Conditions| | | min.| typ.| max.| Unit
I RMS| RMS current per terminal| | | | | 300| A
T VJ| virtual junction temperature| | | -40| | 125| °C
T op| operation temperature| | | -40| | 100| °C
T stg| storage temperature| | | -40| | 125| °C
Weight| | 150| | g
M D| mounting torque| | | 2.25| | 2.75| Nm
M

T

| terminal torque| | | 4.5| 5.5| Nm
d Spp/App terminal to terminal

creepage distance on surface | striking distance through air

DSP/Apb terminal to the backside

| 14.0

16.0

| 10.0

16.0

| | | mm

mm

V

ISOL

| isolation voltage t = 1 second t = 1 minute|

50/60 Hz, RMS; IISOL ≤ 1 mA

| | 3600| | | V
3000| V

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| MCC162-18io1| MCC162-18io1| Box| 6| 454613

Outlines Y4

• Optional accessories for modules
• Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
• Type ZY 180L (L = Left for pin pair 4/5)
• Type ZY 180R (R = Right for pin pair 6/7)
• UL 758, Style 3751

DAIGRAM

IXYS reserves the right to change limits, conditions, and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191210c
© 2019 IXYS all rights reserved

FAQ

• Can this thyristor module be used for DC motor control?
  • Yes, the MCC162-18io1 thyristor module can be used for DC motor control.
• What is the isolation voltage of this thyristor module?
  • The isolation voltage is 3600 V~.
• Is the package RoHS compliant?
  • Yes, the package is RoHS-compliant.

References

• lot.no

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