IXYS DSEI60-02A Fast Recovery Epitaxial Diode Owner’s Manual

June 1, 2024
IXYS

IXYS DSEI60-02A Fast Recovery Epitaxial Diode

Specifications

  • Part Number: DSEI60-02A
  • VRRM: 200 V
  • IFAV: 60 A
  • try: 20 ns
  • Package: TO-247

Ratings:

  • RMS Current: 70 A
  • Virtual Junction Temperature: -40 to 120°C
  • Operation Temperature: -40 to 120°C
  • Storage Temperature: -40 to 120°C
  • Weight: 6 g

Features/Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behavior
  • Very low Irm-values
  • Very soft recovery behavior
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI

Applications

  • Antiparallel diode for high-frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free-wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package Details

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0 standards

FAQ:
Q: What is the maximum RMS current rating for the DSEI60-02A diode?
A: The maximum RMS current rating for the DSEI60-02A diode is 70

FRED

Fast Recovery Epitaxial Diode Single Diode

Part number
DSEI60-02A

Features / Advantages:

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Disclaimer Notice
The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer electronics.

IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-Diode- \(4\)

Package TO-247 Ratings
Symbol Definition Conditions
max. Unit
I RMS RMS current per terminal
T VJ virtual junction temperature
T op operation temperature
T stg storage temperature
Weight 6
M D mounting torque

F

C

| mounting force with clip| | 20| 120| N

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI60-02A| DSEI60-02A| Tube| 30| 471879

IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-Diode- \(6\)

Outlines TO-247

IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-Diode- \(7\)

Sym.| Inches

min.     max.

| Millimeter min.     max.
---|---|---
A| 0.185| 0.209| 4.70| 5.30
A1| 0.087| 0.102| 2.21| 2.59
A2| 0.059| 0.098| 1.50| 2.49
D| 0.819 0.845| 20.79 21.45
E| 0.610 0.640| 15.48 16.24
E2| 0.170 0.216| 4.31     5.48
e| 0.430 BSC| 10.92 BSC
L| 0.780 0.800| 19.80 20.30
L1| –       0.177| –         4.49
Ø P| 0.140 0.144| 3.55     3.65
Q| 0.212 0.244| 5.38     6.19
S| 0.242 BSC| 6.14 BSC
b| 0.039| 0.055| 0.99| 1.40
b2| 0.065| 0.094| 1.65| 2.39
b4| 0.102| 0.135| 2.59| 3.43
c| 0.015| 0.035| 0.38| 0.89
D1| 0.515| –| 13.07| –
D2| 0.020| 0.053| 0.51| 1.35
E1| 0.530| –| 13.45| –
Ø P1| –| 0.29| –| 7.39

Fast Diode

IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-Diode- \(9\) IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-Diode-
\(10\) IXYS-DSEI60-02A-Fast-Recovery-Epitaxial-
Diode- \(1\)

Constants for ZthJC calculation:
i Rthi (K/W) ti(s)

  • 1 0.080 0.0018
  • 2 0.120 0.0100
  • 3 0.100 0.5000
  • 4 0.200 0.0800

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified

References

Read User Manual Online (PDF format)

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