IXYS MCC95 Thyristor Module Owner’s Manual
- August 6, 2024
- IXYS
Table of Contents
- MCC95 Thyristor Module
- Specifications
- Product Usage Instructions
- Features and Advantages:
- Applications:
- Installation:
- Maintenance:
- Q: Can this thyristor module be used for DC motor control?
- Q: What is the maximum forward surge current rating?
- Q: Is the package TO-240AA suitable for industrial
- Q: What is the operational temperature range of the
MCC95 Thyristor Module
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Specifications
- Part Number: MCC95-08io1B
- Max. Repetitive Reverse/Forward Blocking Voltage: 800 V
- Average Forward Current: 116 A
- Forward Voltage Drop: 1.28 V
- Isolation Voltage: 4800 V~
- Package: TO-240AA
- Industry Standard Outline
- RoHS Compliant
Product Usage Instructions
Features and Advantages:
- Thyristor designed for line frequency applications
- Planar passivated chip for improved performance
- Long-term stability for reliable operation
- Direct Copper Bonded Al2O3-ceramic construction for enhanced
durability
Applications:
- Line rectifying at 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter usage
- AC power control applications
- Lighting and temperature control systems
Installation:
- Solder the pins for PCB mounting
- Ensure proper isolation voltage compliance
- Mount on a suitable base plate for efficient heat
dissipation
Maintenance:
Regularly inspect for any signs of damage or overheating.
Replace if necessary to maintain optimal performance.
FAQs
Q: Can this thyristor module be used for DC motor control?
A: Yes, the MCC95-08io1B thyristor can be utilized for DC motor
control applications.
Q: What is the maximum forward surge current rating?
A: The thyristor has a maximum forward surge current rating of
2.25 kA.
Q: Is the package TO-240AA suitable for industrial
applications?
A: Yes, the TO-240AA package is an industry standard outline and
is suitable for various industrial applications.
Q: What is the operational temperature range of the
thyristor?
A: The thyristor has an operational temperature range from -40°C
to [maximum temperature not provided in the manual].
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Thyristor Module
Phase leg
Part number
MCC95-08io1B
3
67 1
542
MCC95-08io1B
VRRM I TAV VT
= 2x 800 V = 116 A = 1.28 V
Backside: isolated
Features / Advantages:
Thyristor for line frequency Planar passivated chip Long-term stability Direct
Copper Bonded Al2O3-ceramic
Applications:
Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power
converter AC power control Lighting and temperature control
Package: TO-240AA
Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering
pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power
cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users
should independently evaluate the suitability of and test each product
selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
Downloaded from Arrow.com.
MCC95-08io1B
Thyristor
Ratings
Symbol VRSM/DSM VRRM/DRM I R/D
VT
I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM
I²t
CJ PGM
PGAV (di/dt)cr
(dv/dt)cr
VGT
IGT
VGD IGD IL
IH t gd
tq
Definition
Conditions
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
VR/D = 800 V
VR/D = 800 V
forward voltage drop
IT = 150 A
I T = 300 A
IT = 150 A
I T = 300 A
average forward current
TC = 85°C
RMS forward current
180° sine
threshold voltage slope resistance
for power loss calculation only
TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C
min.
TVJ = 125 °C
TVJ = 125°C
TVJ = 125°C
thermal resistance junction to case thermal resistance case to heatsink total
power dissipation max. forward surge current
value for fusing
junction capacitance max. gate power dissipation average gate power
dissipation critical rate of rise of current
critical rate of rise of voltage gate trigger voltage gate trigger current
gate non-trigger voltage gate non-trigger current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V tP = 30 µs tP = 300 µs
f = 1 MHz
TC = 25°C TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 25°C TC = 125°C
TVJ = 125 °C; f = 50 Hz
repetitive, IT = 250 A
tP = 200 µs; diG /dt =0.45 A/µs;
IG = 0.45 A; V = VDRM
non-repet., IT = 116 A
V = VDRM
TVJ = 125°C
R GK = ; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = 6 V
TVJ = 25°C
TVJ = -40°C
VD = VDRM
TVJ = 125°C
latching current
holding current gate controlled delay time
turn-off time
t p = 10 µs
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VD = 6 V RGK =
TVJ = 25 °C
VD = ½ VDRM
TVJ = 25 °C
IG = 0.45 A; diG/dt = 0.45 A/µs
VR = 100 V; IT = 150A; V = VDRM TVJ =100 °C
di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs
typ. max. Unit 900 V
800 V
200 µA
5 mA
1.29 V
1.50 V
1.28 V
1.70 V
116 A
182 A
0.85 V
2.4 m
0.22 K/W
0.2
K/W
455 W
2.25 kA
2.43 kA
1.92 kA
2.07 kA
25.3 kA²s
24.6 kA²s
18.3 kA²s
17.7 kA²s
119
pF
10 W
5W
0.5 W
150 A/µs
500 A/µs 1000 V/µs
2.5 V 2.6 V 150 mA 200 mA 0.2 V 10 mA 450 mA
200 mA 2 µs
185
µs
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
Downloaded from Arrow.com.
MCC95-08io1B
Package TO-240AA
Ratings
Symbol I RMS TVJ Top Tstg Weight
Definition
RMS current virtual junction temperature operation temperature storage
temperature
Conditions
per terminal
min. typ. max. Unit 200 A
-40
125 °C
-40
100 °C
-40
125 °C
81
g
MD M
T
d Spp/App d Spb/Apb V
ISOL
mounting torque
2.5
terminal torque
2.5
creepage distance on surface | striking distance through air
terminal to terminal terminal to backside
13.0 9.7 16.0 16.0
isolation voltage
t = 1 second t = 1 minute
50/60 Hz, RMS; IISOL 1 mA
4800 4000
4 Nm 4 Nm
mm mm
V V
Ordering Standard
Ordering Number MCC95-08io1B
Marking on Product MCC95-08io1B
Delivery Mode Box
Quantity Code No.
36
458139
Similar Part MCMA110P1200TA MCMA140P1200TA
Package TO-240AA-1B TO-240AA-1B
Voltage class 1200 1200
Equivalent Circuits for Simulation
I V0
R0
Thyristor
V 0 max R0 max
threshold voltage slope resistance *
0.85 1.2
- on die level
T VJ = 125°C
V m
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
Outlines TO-240AA
MCC95-08io1B
3
67 1
542
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
MCC95-08io1B
Thyristor
2500
105
VR = 0 V
2000
ITSM 1500
[A] 1000
50 Hz
80% VRRM TVJ = 45°C TVJ = 125°C
500
0.001 0.01
0.1
1
t [s]
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
I2t [A2s]
TVJ = 45°C
TVJ = 125°C
104 1
2 3 4 5 6 7 8 910
t [ms]
Fig. 2 I2t versus time (1-10 ms)
250
200
150 ITAVM
100 [A] 50
DC 180 ° sin 120 ° 60 ° 30 °
0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Max. forward current at case temperature
250 200 Ptot 150 [W] 100
50
DC 180 ° sin 120 ° 60 ° 30 °
RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2
3
0
0
50 100 150
0
50
100
ITAVM, IFAVM [A]
Ta [°C]
Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode)
10
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C
VG 1
[V]
3 2
56 1
4
IGD, TVJ = 125°C
0.1
1
10
100
4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
1000 10000
IG [mA]
Fig. 5 Gate trigger characteristics
1000
800 Ptot 600 [W] 400
200
Circuit B6 3x MCC95 or
3x MCD95
RthKA K/W
0.03 0.06 0.08 0.12 0.15 0.3 0.5
0
0
100 200 300
0
50
100
150
IdAVM [A]
Ta [°C]
Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature
1000
TVJ = 25°C
100 tgd
[µs] 10
typ. Limit
1
10
100
1000
IG [mA]
Fig. 7 Gate controlled delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
Downloaded from Arrow.com.
Thyristor
1200 1000
Circuit W3 3x MCC95 or 3x MCD95
800
Ptot
600
[W] 400
RthKA K/W
0.03 0.06 0.08 0.12 0.15 0.3 0.5
200
0 0 50 100 150 200 250 0
50
100
150
IRMS [A]
Ta [°C]
Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
MCC95-08io1B
0.30
0.25
0.20
30°
ZthJC
0.15
60° 120° 180°
[K/W]
DC
0.10
0.05
0.00
10-3
10-2
10-1
100
101
102
t [s]
Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)
RthJC for various conduction angles d:
d RthJC [K/W] DC 0.22 180° 0.23 120° 0.25 60° 0.27 30° 0.28
Constants for ZthJC calculation:
i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456
ti [s] 0.0019 0.0477 0.3440
0.5
0.4
ZthJK 0.3
30° 60° 120° 180° DC
[K/W] 0.2
0.1
0.0
10-3
10-2
10-1
100
101
102
103
t [s]
Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)
RthJK for various conduction angles d:
d RthJK [K/W] DC 0.42 180° 0.43 120° 0.45 60° 0.47 30° 0.48
Constants for ZthJK calculation:
i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000
ti [s] 0.0019 0.0477 0.3440 1.3200
IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20200701e
Downloaded from Arrow.com.
References
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