IXYS MCC95 Thyristor Module Owner’s Manual

August 6, 2024
IXYS

MCC95 Thyristor Module

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Specifications

  • Part Number: MCC95-08io1B
  • Max. Repetitive Reverse/Forward Blocking Voltage: 800 V
  • Average Forward Current: 116 A
  • Forward Voltage Drop: 1.28 V
  • Isolation Voltage: 4800 V~
  • Package: TO-240AA
  • Industry Standard Outline
  • RoHS Compliant

Product Usage Instructions

Features and Advantages:

  • Thyristor designed for line frequency applications
  • Planar passivated chip for improved performance
  • Long-term stability for reliable operation
  • Direct Copper Bonded Al2O3-ceramic construction for enhanced
    durability

Applications:

  • Line rectifying at 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter usage
  • AC power control applications
  • Lighting and temperature control systems

Installation:

  1. Solder the pins for PCB mounting
  2. Ensure proper isolation voltage compliance
  3. Mount on a suitable base plate for efficient heat
    dissipation

Maintenance:

Regularly inspect for any signs of damage or overheating.
Replace if necessary to maintain optimal performance.

FAQs

Q: Can this thyristor module be used for DC motor control?

A: Yes, the MCC95-08io1B thyristor can be utilized for DC motor
control applications.

Q: What is the maximum forward surge current rating?

A: The thyristor has a maximum forward surge current rating of
2.25 kA.

Q: Is the package TO-240AA suitable for industrial

applications?

A: Yes, the TO-240AA package is an industry standard outline and
is suitable for various industrial applications.

Q: What is the operational temperature range of the

thyristor?

A: The thyristor has an operational temperature range from -40°C
to [maximum temperature not provided in the manual].

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Thyristor Module
Phase leg
Part number
MCC95-08io1B

3

67 1

542

MCC95-08io1B

VRRM I TAV VT

= 2x 800 V = 116 A = 1.28 V

Backside: isolated

Features / Advantages:
Thyristor for line frequency Planar passivated chip Long-term stability Direct Copper Bonded Al2O3-ceramic

Applications:
Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control

Package: TO-240AA
Isolation Voltage: 4800 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Base plate: DCB ceramic Reduced weight Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

Downloaded from Arrow.com.

MCC95-08io1B

Thyristor

Ratings

Symbol VRSM/DSM VRRM/DRM I R/D
VT
I TAV I T(RMS) VT0 rT R thJC RthCH Ptot I TSM
I²t
CJ PGM
PGAV (di/dt)cr
(dv/dt)cr
VGT
IGT
VGD IGD IL
IH t gd
tq

Definition

Conditions

max. non-repetitive reverse/forward blocking voltage

max. repetitive reverse/forward blocking voltage

reverse current, drain current

VR/D = 800 V

VR/D = 800 V

forward voltage drop

IT = 150 A

I T = 300 A

IT = 150 A

I T = 300 A

average forward current

TC = 85°C

RMS forward current

180° sine

threshold voltage slope resistance

for power loss calculation only

TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 125°C TVJ = 25°C

min.

TVJ = 125 °C

TVJ = 125°C

TVJ = 125°C

thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current
value for fusing
junction capacitance max. gate power dissipation average gate power dissipation critical rate of rise of current
critical rate of rise of voltage gate trigger voltage gate trigger current gate non-trigger voltage gate non-trigger current

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

t = 10 ms; (50 Hz), sine

t = 8,3 ms; (60 Hz), sine

VR = 400 V tP = 30 µs tP = 300 µs

f = 1 MHz

TC = 25°C TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 125°C VR = 0 V TVJ = 25°C TC = 125°C

TVJ = 125 °C; f = 50 Hz

repetitive, IT = 250 A

tP = 200 µs; diG /dt =0.45 A/µs;

IG = 0.45 A; V = VDRM

non-repet., IT = 116 A

V = VDRM

TVJ = 125°C

R GK = ; method 1 (linear voltage rise)

VD = 6 V

TVJ = 25°C

TVJ = -40°C

VD = 6 V

TVJ = 25°C

TVJ = -40°C

VD = VDRM

TVJ = 125°C

latching current
holding current gate controlled delay time
turn-off time

t p = 10 µs

TVJ = 25 °C

IG = 0.45 A; diG/dt = 0.45 A/µs

VD = 6 V RGK =

TVJ = 25 °C

VD = ½ VDRM

TVJ = 25 °C

IG = 0.45 A; diG/dt = 0.45 A/µs

VR = 100 V; IT = 150A; V = VDRM TVJ =100 °C

di/dt = 10 A/µs dv/dt = 20 V/µs tp = 200 µs

typ. max. Unit 900 V

800 V

200 µA

5 mA

1.29 V

1.50 V

1.28 V

1.70 V

116 A

182 A

0.85 V

2.4 m

0.22 K/W

0.2

K/W

455 W

2.25 kA

2.43 kA

1.92 kA

2.07 kA

25.3 kA²s

24.6 kA²s

18.3 kA²s

17.7 kA²s

119

pF

10 W

5W

0.5 W

150 A/µs

500 A/µs 1000 V/µs

2.5 V 2.6 V 150 mA 200 mA 0.2 V 10 mA 450 mA

200 mA 2 µs

185

µs

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

Downloaded from Arrow.com.

MCC95-08io1B

Package TO-240AA

Ratings

Symbol I RMS TVJ Top Tstg Weight

Definition
RMS current virtual junction temperature operation temperature storage temperature

Conditions
per terminal

min. typ. max. Unit 200 A

-40

125 °C

-40

100 °C

-40

125 °C

81

g

MD M
T
d Spp/App d Spb/Apb V
ISOL

mounting torque

2.5

terminal torque

2.5

creepage distance on surface | striking distance through air

terminal to terminal terminal to backside

13.0 9.7 16.0 16.0

isolation voltage

t = 1 second t = 1 minute

50/60 Hz, RMS; IISOL 1 mA

4800 4000

4 Nm 4 Nm
mm mm
V V

Ordering Standard

Ordering Number MCC95-08io1B

Marking on Product MCC95-08io1B

Delivery Mode Box

Quantity Code No.

36

458139

Similar Part MCMA110P1200TA MCMA140P1200TA

Package TO-240AA-1B TO-240AA-1B

Voltage class 1200 1200

Equivalent Circuits for Simulation

I V0

R0

Thyristor

V 0 max R0 max

threshold voltage slope resistance *

0.85 1.2

  • on die level

T VJ = 125°C
V m

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

Outlines TO-240AA

MCC95-08io1B

3

67 1

542

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved
Downloaded from Arrow.com.

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

MCC95-08io1B

Thyristor
2500

105
VR = 0 V

2000
ITSM 1500
[A] 1000

50 Hz
80% VRRM TVJ = 45°C TVJ = 125°C

500

0.001 0.01

0.1

1

t [s]

Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration

I2t [A2s]

TVJ = 45°C

TVJ = 125°C

104 1

2 3 4 5 6 7 8 910

t [ms]

Fig. 2 I2t versus time (1-10 ms)

250

200
150 ITAVM
100 [A] 50

DC 180 ° sin 120 ° 60 ° 30 °

0 0 25 50 75 100 125 150
TC [°C] Fig. 3 Max. forward current at case temperature

250 200 Ptot 150 [W] 100
50

DC 180 ° sin 120 ° 60 ° 30 °

RthKA K/W 0.4 0.6 0.8 1 1.2 1.5 2
3

0

0

50 100 150

0

50

100

ITAVM, IFAVM [A]

Ta [°C]

Fig. 4 Power dissipation vs. on-state current & ambient temperature (per thyristor or diode)

10
1: IGT, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C

VG 1
[V]

3 2
56 1
4

IGD, TVJ = 125°C
0.1

1

10

100

4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W
1000 10000

IG [mA]

Fig. 5 Gate trigger characteristics

1000

800 Ptot 600 [W] 400
200

Circuit B6 3x MCC95 or
3x MCD95

RthKA K/W
0.03 0.06 0.08 0.12 0.15 0.3 0.5

0

0

100 200 300

0

50

100

150

IdAVM [A]

Ta [°C]

Fig. 6 Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature

1000

TVJ = 25°C

100 tgd
[µs] 10

typ. Limit

1

10

100

1000

IG [mA]

Fig. 7 Gate controlled delay time

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

Downloaded from Arrow.com.

Thyristor

1200 1000

Circuit W3 3x MCC95 or 3x MCD95

800
Ptot
600
[W] 400

RthKA K/W
0.03 0.06 0.08 0.12 0.15 0.3 0.5

200

0 0 50 100 150 200 250 0

50

100

150

IRMS [A]

Ta [°C]

Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature

MCC95-08io1B

0.30

0.25

0.20

30°

ZthJC
0.15

60° 120° 180°

[K/W]

DC

0.10

0.05

0.00

10-3

10-2

10-1

100

101

102

t [s]

Fig. 9 Transient thermal impedance junction to case (per thyristor/diode)

RthJC for various conduction angles d:
d RthJC [K/W] DC 0.22 180° 0.23 120° 0.25 60° 0.27 30° 0.28

Constants for ZthJC calculation:

i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456

ti [s] 0.0019 0.0477 0.3440

0.5

0.4
ZthJK 0.3

30° 60° 120° 180° DC

[K/W] 0.2

0.1

0.0

10-3

10-2

10-1

100

101

102

103

t [s]

Fig. 10 Transient thermal impedance junction to heatsink (per thyristor/diode)

RthJK for various conduction angles d:
d RthJK [K/W] DC 0.42 180° 0.43 120° 0.45 60° 0.47 30° 0.48

Constants for ZthJK calculation:

i Rthi [K/W] 1 0.0066 2 0.0678 3 0.1456 4 0.2000

ti [s] 0.0019 0.0477 0.3440 1.3200

IXYS reserves the right to change limits, conditions and dimensions.
© 2020 IXYS all rights reserved

Data according to IEC 60747and per semiconductor unless otherwise specified

20200701e

Downloaded from Arrow.com.

References

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