IXYS DHG40I4500KO Sonic Fast Recovery Diode Owner’s Manual

July 8, 2024
IXYS

IXYS DHG40I4500KO Sonic Fast Recovery Diode

IXYS DHG40I4500KO Sonic Fast Recovery Diode

IMPORTANT INFORMATON

High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode

Part number
DHG40I4500KO

Diode Diagram

Features / Advantages:

  • Planar passivated chips
  • Very low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    – Power dissipation within the diode
    – Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package: ISOPLUS 264

  • Isolation Voltage: V~ 4200
  • Industry convenient outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Fast Diode

Fast Diode Ratings
Symbol Definition                                  Conditions
min. typ.
V RSM max. non-repetitive reverse blocking voltage
25°C
V RRM max. repetitive reverse blocking voltage
4500 V
I R _reverse current, drain current
_ VR = 4500 V VR = 4500 V
TVJ = 125°C
V F forward voltage drop __
3.02 V
IF = 100 A
IF =     50 A
IF = 100 A
I FAV average forward current TC = 80°C

rectangular                          d = 1.0

| | TVJ = 150°C| | | 43| A
V F0 r F| threshold voltage for power loss calculation only slope resistance| | TVJ = 150°C| | | 2.20| V
24| mΩ
R thJC| thermal resistance junction to case| | | | | 0.5| K/W
R thCH| thermal resistance case to heatsink| | | | 0.15| | K/W
P tot| total power dissipation| | TC = 25°C| | | 250| W
I FSM| max. forward surge current t = 10 ms; (50 Hz), sine;| VR = 0 V| TVJ = 45°C| | | 600| A
C J| junction capacitance VR = 1800 V f = 1 MHz| | TVJ = 25°C| | 13| | pF
I RM| max. reverse recovery current| | TVJ = 25 °C| | 80| | A
| IF = 50 A; VR = 2800 V| | TVJ = 125 °C| 82| A
t rr| reverse recovery time -diF /dt = 800 A/µs| | TVJ = 25 °C| | 1450| | ns
| TVJ = 125 °C| 2200| ns

Package ISOPLUS264

Symbol| Definition                                      Conditions| | min.| typ.| max.| Unit
---|---|---|---|---|---|---
I RMS| RMS current per terminal| | | 70| A
T VJ| virtual junction temperature| -40| | 150| °C
T op| operation temperature| -40| | 125| °C
T stg| storage temperature| -40| | 150| °C
Weight| | 10| | g
F C| mounting force with clip| 20| | 120| N
d Spp/App

d Spb/Apb

| creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside| 13.8

5.0

| | | mm

mm

V ISOL| isolation voltage
t = 1 second
t = 1 minute| 50/60 Hz, RMS; IISOL ≤ 1 mA| 4200| | | V
3000| V

Product Marking

Product Marking

Part description

D=Diode
H= Sonic Fast Recovery Diode
G= extreme fast
40= Current Rating [A] I= Single Diode
4500= Reverse Voltage [V] KO= ISOPLUS264 (2HV)

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DHG40I4500KO| DHG40I4500KO| Tube| 25| 520601

Equivalent Circuits for Simulation T vj=150°C

| Fast Diode
---|---
V0 max threshold voltage| 2.2
R0 max slope resistance *| 24

V
mΩ

Outlines ISOPLUS264

Outlines ISOPLUS264

Die konvexe Form des Substrates its typ. < 0.05 mm über der Kunststoffoberfläche Der Bauteile Unterseite The convex bow of substrate is typ. < 0.05 mm over plastic surface level of device bottom side

Dim.

|

Millimeter

|

Inches

---|---|---

min

|

max

|

min

|

max

A| 4.83| 5.21| 0.190| 0.205
A1| 2.59| 3.00| 0.102| 0.118
A2| 1.17| 1.40| 0.046| 0.055
b| 1.14| 1.40| 0.045| 0.055
b2| 1.60| 1.83| 0.063| 0.072
c| 0.51| 0.74| 0.020| 0.029
D| 25.91| 26.42| 1.020| 1.040
D1| 20.34| 20.85| 0.801| 0.821
D2| 1.65| 2.03| 0.065| 0.080
D3| 25.29| 25.78| 1.000| 1.020
E| 19.56| 20.29| 0.770| 0.799
E1| 16.97| 17.53| 0.668| 0.690
e| 15.24| BSC| 0.600| BSC
e1| 14.10| BSC| 0.555| BSC
L| 19.81| 20.83| 0.780| 0.820
L1| 2.03| 2.59| 0.080| 0.102
Q| 5.33| 5.97| 0.210| 0.235
Q1| 12.45| 13.03| 0.490| 0.513
R| 3.81| 4.57| 0.150| 0.180
R1| 2.54| 3.30| 0.100| 0.130
W| –| 0.10| –| 0.004

Important note:

External clearances between pins and between pins and tab may be insufficient to prevent flash over under all conditions. It is the customer’ s responsibility to apply additional insulation appropriate to the application. ISOPLUS264 is designed to isolate a max continuous operation voltage (DC) of 1700 V. The peak test voltage of 4200 V assures safety for transient voltages only. The package is not tested for partial discharge. If the product is used outside the package design voltage range the customer must use additional electrical insulation. Extra insulation layers should be used both between the tab and any heatsink and between any conducting clip and the top surface of the package particularly when metal parts (such as a heatsink or a clip) are in contact. Please note that the intention of this package is to provide customers with an encapsulated die for high voltage application but the responsibility rests entirely with the customer to ensure for safe operation. Bodily injury cannot be excluded if this warning is disregarded. Device implementation is the end user’s responsibility.

For a low FIT rate over lifetime failures due to SEB (Single Event Burnout) and an adequate voltage derating should be considered.

Diode Diagram

Fast Diode

Fig. 1 Forward current IF versus VF
Fast Diode

Fig. 2 Typ. reverse recov. charge Qrr versus -diF\ /dt

Fig. 3 Typ. reverse recov. current IRM versus -diF /dt
Fast Diode

Fig. 4 Typ. dynamic parameters Qrr, IRM versus TVJ
Fast Diode

Fig. 5 Typ. reverse recov. time trr versus -diF /dt
Fast Diode

Fig. 6 Typ. forward recov. voltage VFR & time tfr versus diF /dt
Fast Diode

Fig. 7 Typ. recovery energy Erec versus -diF /dt
Fast Diode

Fig. 8 Typical transient thermal impedance junction to heatsink
Fast Diode

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References

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