IXYS CLA50E1200HB High Efficiency Single Thyristor User Manual

IXYS CLA50E1200HB High Efficiency Single Thyristor User Manual

High Efficiency Thyristor

VRRM = 1200
V ITAV = 50 A
VT = 1.27 V

Single Thyristor

Part number
CLA50E1200HB

Backside: anode

Features / Advantages:

• Thyristor for line frequency
• Planar passivated chip
• Long-term stability

Applications:

• Line rectifying 50/60 Hz
• Softstart AC motor control
• DC Motor control
• Power converter
• AC power control
• Lighting and temperature control

Package: TO-247

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer- electronics.

mA
V T forward voltage drop| IT =     50 A TVJ = 25°C| | | 1.32| V
I T = 100 A| 1.60| V
IT =     50 A                                                 TVJ = 125 °C| | | 1.27| V
I T = 100 A| 1.65| V
I TAV| average forward current TC = 125°C TVJ = 150°C| | | 50| A
I T(RMS)| RMS forward current 180° sine| 79| A
V T0 r T| threshold voltage TVJ = 150°C for power loss calculation only slope resistance| | | 0.88| V
7.7| mΩ
R thJC| thermal resistance junction to case| | | 0.25| K/W
R thCH| thermal resistance case to heatsink| | 0.3| | K/W
P tot| total power dissipation TC   =   25°C| | | 500| W
I TSM max. forward surge current| t = 10 ms; (50 Hz), sine TVJ = 45°C| | | 650| A
t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 700| A
t = 10 ms; (50 Hz), sine                          TVJ = 150°C| | | 555| A
t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 595| A
I²t value for fusing| t = 10 ms; (50 Hz), sine TVJ = 45°C| | | 2.12| kA²s
t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 2.04| kA²s
t = 10 ms; (50 Hz), sine                          TVJ = 150°C| | | 1.54| kA²s
t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 1.48| kA²s
C J| junction capacitance VR = 400 V f = 1 MHz TVJ = 25°C| | 25| | pF
P GM| max. gate power dissipation tP =   30 µs TC   = 150°C| | | 10| W
| tP = 300 µs| 5| W
P GAV| average gate power dissipation| 0.5| W
(di/dt) cr| critical rate of rise of current TVJ = 150 °C; f = 50 Hz repetitive, IT = 150 A| | | 150| A/µs
| tP = 200 µs; diG /dt = 0.3 A/µs;| |
| IG =  0.3 A; V = ⅔ VDRM                 non-repet., IT =   50 A| 500| A/µs
(dv/dt) cr| critical rate of rise of voltage V = ⅔ VDRM TVJ = 150°CR GK = ∞; method 1 (linear voltage rise)| | | 1000| V/µs
V GT| gate trigger voltage VD = 6 V TVJ = 25°C| | | 1.5| V
| TVJ = -40°C| 1.6| V
I GT| gate trigger current VD = 6 V TVJ = 25°C| 50| mA
| TVJ = -40°C| 80| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM TVJ = 150°C| | | 0.2| V
I GD| gate non-trigger current| 3| mA
I L| latching current t p =     10 µs TVJ = 25 °CIG =     0.3 A; diG/dt = 0.3 A/µs| | | 125| mA
I H| holding current VD = 6 V RGK = ∞ TVJ = 25 °C| | | 100| mA
t gd| gate controlled delay time VD = ½ VDRM TVJ = 25 °CIG =  0.3 A; diG/dt =       0.3 A/µs| | | 2| µs
t q| turn-off time VR = 100 V; IT = 50A; V = ⅔ VDRM TVJ 125 °Cdi/dt = 10 A/µs dv/dt =      20 V/µs tp = 200 µs| | 200| | µs
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.| max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N

Product Marking

Part description

C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
50 = Current Rating [A] E = Single Thyristor
1200 = Reverse Voltage [V] HB = TO-247AD (3)

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA50E1200HB| CLA50E1200HB| Tube| 30| 503748
Similar Part| Package| Voltage class
---|---|---
CLA50E1200TC| TO-268AA (D3Pak) (2)| 1200
Equivalent Circuits for Simulation| on die level| T = V 150°C
---|---|---
| Thyristor
V0 max| threshold voltage| 0.88| | V
R0 max| slope resistance *| 5.2| mΩ

Outlines TO-247

Thyristor

Fig. 1 Forward characteristics

Fig. 2 Surge overload current I TSM: crest value, t: duration

Fig. 3 I2 t versus time (1-10 s)

Fig. 4 Gate voltage & gate current

Fig. 5 Gate controlled delay time tgd

Fig. 6 Max. forward current at case temperature

Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature

Fig. 7 Transient thermal impedance junction to case

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20191202i
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References

• Product Disclaimer - Littelfuse

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