IXYS CLA50E1200HB High Efficiency Single Thyristor User Manual
- June 1, 2024
- IXYS
Table of Contents
IXYS CLA50E1200HB High Efficiency Single Thyristor User Manual
High Efficiency Thyristor
VRRM = 1200
V ITAV = 50 A
VT = 1.27 V
Single Thyristor
Part number
CLA50E1200HB
Backside: anode
Features / Advantages:
- Thyristor for line frequency
- Planar passivated chip
- Long-term stability
Applications:
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
Package: TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at Disclaimer Notice www.littelfuse.com/disclaimer- electronics.
| Thyristor | Ratings |
|---|---|
| Symbol | **Definition |
| Conditions** | min. |
| V RSM/DSM | max. non-repetitive reverse/forward blocking voltage |
| TVJ = 25°C | |
| V RRM/DRM | max. repetitive reverse/forward blocking voltage TVJ = |
| 25°C | |
| I R/D | reverse current, drain current VR/D = 1200 V |
| TVJ = 25°C | |
| VR/D = 1200 V TVJ = 125°C | 4 |
mA
V T forward voltage drop| IT = 50 A
TVJ = 25°C| | | 1.32| V
I T = 100 A| 1.60| V
IT = 50 A TVJ = 125 °C| |
| 1.27| V
I T = 100 A| 1.65| V
I TAV| average forward current TC = 125°C
TVJ = 150°C| | | 50| A
I T(RMS)| RMS forward current 180° sine| 79| A
V T0 r T| threshold voltage TVJ = 150°C for power loss
calculation only slope resistance| | | 0.88| V
7.7| mΩ
R thJC| thermal resistance junction to case| | | 0.25| K/W
R thCH| thermal resistance case to heatsink| | 0.3| | K/W
P tot| total power dissipation TC = 25°C| | | 500| W
I TSM max. forward surge current| t = 10 ms; (50 Hz), sine
TVJ = 45°C| | | 650| A
t = 8,3 ms; (60 Hz), sine VR = 0 V| 700| A
t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 555| A
t = 8,3 ms; (60 Hz), sine VR = 0 V| 595| A
I²t value for fusing| t = 10 ms; (50 Hz), sine
TVJ = 45°C| | | 2.12| kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V| 2.04| kA²s
t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 1.54| kA²s
t = 8,3 ms; (60 Hz), sine VR = 0 V| 1.48| kA²s
C J| junction capacitance VR = 400 V f = 1 MHz
TVJ = 25°C| | 25| | pF
P GM| max. gate power dissipation tP = 30 µs
TC = 150°C| | | 10| W
| tP = 300 µs| 5| W
P GAV| average gate power dissipation| 0.5| W
(di/dt) cr| critical rate of rise of current TVJ = 150 °C; f = 50 Hz
repetitive, IT = 150 A| | | 150| A/µs
| tP = 200 µs; diG /dt = 0.3 A/µs;| |
| IG = 0.3 A; V = ⅔ VDRM non-repet., IT = 50 A| 500| A/µs
(dv/dt) cr| critical rate of rise of voltage V = ⅔ VDRM
TVJ = 150°CR GK = ∞; method 1 (linear voltage rise)| | | 1000| V/µs
V GT| gate trigger voltage VD = 6 V
TVJ = 25°C| | | 1.5| V
| TVJ = -40°C| 1.6| V
I GT| gate trigger current VD = 6 V
TVJ = 25°C| 50| mA
| TVJ = -40°C| 80| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM
TVJ = 150°C| | | 0.2| V
I GD| gate non-trigger current| 3| mA
I L| latching current t p = 10 µs
TVJ = 25 °CIG = 0.3 A; diG/dt = 0.3 A/µs| | | 125| mA
I H| holding current VD = 6 V RGK = ∞
TVJ = 25 °C| | | 100| mA
t gd| gate controlled delay time VD = ½ VDRM
TVJ = 25 °CIG = 0.3 A; diG/dt = 0.3 A/µs| | | 2| µs
t q| turn-off time VR = 100 V; IT = 50A; V = ⅔ VDRM TVJ 125 °Cdi/dt =
10 A/µs dv/dt = 20 V/µs tp = 200 µs| | 200| | µs
Package| TO-247| Ratings
---|---|---
Symbol| Definition| Conditions| min.| typ.|
max.| Unit
I **RMS| RMS current| per terminal| | | 70| A
T VJ| virtual junction temperature| | -40| | 150| °C
T op| operation temperature| | -40| | 125| °C
T stg| storage temperature| | -40| | 150| °C
Weight| | 6| | g
M D| mounting torque| | 0.8| | 1.2| Nm
F C**| mounting force with clip| | 20| 120| N
Product Marking
Part description
C = Thyristor (SCR)
L = High Efficiency Thyristor
A = (up to 1200V)
50 = Current Rating [A] E = Single Thyristor
1200 = Reverse Voltage [V] HB = TO-247AD (3)
Ordering| Ordering Number| Marking on Product|
Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA50E1200HB| CLA50E1200HB| Tube| 30| 503748
Similar Part| Package| Voltage class
---|---|---
CLA50E1200TC| TO-268AA (D3Pak) (2)| 1200
Equivalent Circuits for Simulation| on die level| T = V 150°C
---|---|---
| Thyristor
V0 max| threshold voltage| 0.88| | V
R0 max| slope resistance *| 5.2| mΩ
Outlines TO-247
| Sym. | Inches min. max. | Millimeter min. max. |
|---|---|---|
| A | 0.185 | 0.209 |
| A1 | 0.087 | 0.102 |
| A2 | 0.059 | 0.098 |
| D | 0.819 0.845 | 20.79 21.45 |
| E | 0.610 0.640 | 15.48 16.24 |
| E2 | 0.170 0.216 | 4.31 5.48 |
| e | 0.215 BSC | 5.46 BSC |
| L | 0.780 0.800 | 19.80 20.30 |
| L1 | – 0.177 | – 4.49 |
| Ø P | 0.140 0.144 | 3.55 3.65 |
| Q | 0.212 0.244 | 5.38 6.19 |
| S | 0.242 BSC | 6.14 BSC |
| b | 0.039 | 0.055 |
| b2 | 0.065 | 0.094 |
| b4 | 0.102 | 0.135 |
| c | 0.015 | 0.035 |
| D1 | 0.515 – | 13.07 – |
| D2 | 0.020 0.053 | 0.51 1.35 |
| E1 | 0.530 – | 13.45 – |
| Ø P1 | – 0.29 | – 7.39 |
Thyristor
Fig. 1 Forward characteristics
Fig. 2 Surge overload current I TSM: crest value, t: duration
Fig. 3 I2 t versus time (1-10 s)
Fig. 4 Gate voltage & gate current
Fig. 5 Gate controlled delay time tgd
Fig. 6 Max. forward current at case temperature
Fig. 7a Power dissipation versus direct output current
Fig. 7b and ambient temperature
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions. Data
according to IEC 60747and per semiconductor unless otherwise specified
20191202i
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References
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