IXYS CLA60MT1200NHR High Efficiency Thyristor Owner’s Manual

June 16, 2024
IXYS

IXYS CLA60MT1200NHR High Efficiency Thyristor

Product Information

Specifications

  • Part Number: CLA60MT1200NHR
  • VRRM: 1200 V
  • ITAV: 30 A
  • VT: 1.25 V
  • Three Quadrants Operation: QI – QIII

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Rectifier Ratings

Symbol Definition Conditions Typical Value Maximum Value Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage 1300 V V
VRRM/DRM max. repetitive reverse/forward blocking voltage 1200 V V
IR/ID reverse current, drain current VR/D = 1200 V 2 mA
VT forward voltage drop IT = 30 A 1.25 V V
ITAV average forward current 30 A A
IRMS RMS forward current per phase 66 A A
VT0 threshold voltage slope resistance for power loss calculation only 0.86
V V
rT thermal resistance junction to case 12.5 m K/W
RthJC thermal resistance case to heatsink 0.9 K/W K/W
Ptot total power dissipation 140 W W
ITSM max. forward surge current 380 A A
CJ junction capacitance f = 1 MHz 25 pF pF
PGM max. gate power dissipation 10 W W
PGAV average gate power dissipation 5 W W
(di/dt)cr critical rate of rise of current repetitive, IT = 90 A 0.5 W W
(dv/dt)cr critical rate of rise of voltage IG = 0.3A; VD = VDRM 150 V/μs

V/μs
VGT| gate trigger voltage| VD = 6 V| 1.56 V| | V
IGT| gate trigger current| VD = 6 V| 1.25 V| | V
VGD| gate non-trigger voltage| VD = VDRM| 1.61 V| | V
IGD| gate non-trigger current| VD = 6 V RGK =| 30 A| | A
IL| latching current| | 66 A| | A
IH| holding current| | 410 A| | A
tgd| gate controlled delay time| t = 10 ms; (50 Hz), sine| 325 A| | ms
tq| turn-off time| t = 8.3 ms; (60 Hz), sine| 350 A| | ms

Product Usage Instructions

Installation

  1. Ensure that the power supply is turned off before installation.
  2. Mount the product securely on a PCB using the provided soldering pins.
  3. Make sure the connections are correct and secure.
  4. Double-check all connections before turning on the power supply.

Operation

The High Efficiency Thyristor is designed for three quadrants operation (QI – QIII). It can be used for line rectifying 50/60 Hz, softstart AC motor control, DC motor control, power converter, AC power control, lighting, and temperature

Applications

  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control

Packaging

  • Package: ISO247
  • Isolation Voltage: 3600 V~
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling

VRRM = 1200 V
ITAV = 30 A
VT = 1,25V

Part number

  • CLA60MT1200NHR

Three Quadrants Operation

Note: All Polarities are referenced to T1

Product Overview

Backside: isolated

Features / Advantages

  • Triac for line frequency
  • Three Quadrants Operation – QI – QIII
  • Planar passivated chip
  • Long-term stability of blocking currents and voltages

Applications And Package

Applications

  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control

Package: ISO247

  • Isolation Voltage: 3 6 0 0 V~
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling

Rectifier

Rectifier Ratings
Symbol **Definition
Conditions**
V RSM/DSM max. non-repetitive reverse/forward blocking voltage
TVJ = 25°C
V RRM/DRM max. repetitive reverse/forward blocking voltage
TVJ = 25°C
I R/D reverse current, drain current VR/D = 1200 V
10
VR/D = 1200 V
V T forward voltage drop IT  =     30 A
TVJ = 25°C
I T  =     60 A 1,56
IT  =     30 A                                                  TVJ = 125°C
1,25
I T  =     60 A 1,61
I TAV average forward current TC = 100°C

A
I RMS| RMS forward current per phase 180° sine| | | 66| A
V T0

r T

| threshold voltage

slope resistance for power loss calculation only

| | TVJ = 150°C| | | 0,86| V
12,5| mΩ
R thJC| thermal resistance junction to case| | | | | 0,9| K/W
R thCH| thermal resistance case to heatsink| | | | 0,25| | K/W
P tot| total power dissipation| | TC = 25°C| | | 140| W
I TSM max. forward surge current| t =  10 ms; (50 Hz), sine TVJ = 45°C| | | 380| A
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 410| A
| t =  10 ms; (50 Hz), sine                          TVJ = 150°C| | | 325| A
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 350| A
I²t value for fusing| t =  10 ms; (50 Hz), sine TVJ = 45°C| | | 720| A²s
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 700| A²s
| t =  10 ms; (50 Hz), sine                          TVJ = 150°C| | | 530| A²s
| t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 510| A²s
C J| junction capacitance VR = 400V f = 1 MHz| | TVJ = 25°C| | 25| | pF
P GM| max. gate power dissipation tP = 30 µs| | TC = 150°C| | | 10| W
| tP = 300 µs| | | 5| W
P GAV| average gate power dissipation| | | 0,5| W
(di/dt) cr| critical rate of rise of current TVJ = 150°C; f = 50 Hz

t = 200 µs; di /dt = 0,3

|

A/µs;

| repetitive, IT = 90 A| | | 150| A/µs
IG =     0,3A; VD = ⅔ VDRM                non-repet., IT = 30 A| | |

500

|

A/µs

(dv/dt) cr critical rate of rise of voltage VD =  ⅔ VDRM TVJ = 150°C

R GK = ∞; method 1 (linear voltage rise)

| | | 500| V/µs
V GT| gate trigger voltage VD = 6 V| | TVJ = 25°C| | | 1,7| V
| | | TVJ = -40°C| 1,9| V
I GT| gate trigger current VD = 6 V| | TVJ = 25°C| ± 60| mA
| | | TVJ = -40°C| ± 80| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM| | TVJ = 150°C| | | 0,2| V
I GD| gate non-trigger current| | | ± 1| mA
I L latching current t p  =     10 µs TVJ = 25°C

IG    =     0,3A; diG /dt = 0,3 A/µs

| | | 90| mA
I H| holding current VD = 6 V RGK = ∞| | TVJ = 25°C| | | 60| mA
t gd gate controlled delay time VD   = ½ VDRM TVJ = 25°C

IG    =     0,3A; diG /dt =     0,3 A/µs

| | | 2| µs
t q turn-off time VR = 100 V; IT = 30A; VD = ⅔ VDRM  TVJ =125 °C

di/dt =   10 A/µs; dv/dt =      20 V/µs; tp = 200 µs

| | 150| | µs

Package

Package ISO247 Ratings
Symbol **Definition
Conditions** min.
I RMS RMS current per terminal
T VJ virtual junction temperature
T op operation temperature
T stg storage temperature
Weight 6
M D mounting torque

F

C

| mounting force with clip| | 20| 120| N
d Spp/App|

creepage distance on surface | striking distance through air

| terminal to terminal| 2,7| | | mm
d Spb/Apb| | terminal to backside| 4,1| mm
V

ISOL

| isolation voltage t = 1 second t = 1 minute|

50/60 Hz, RMS; IISOL ≤ 1 mA

| 3600| | | V
3000| V

Product Marking

Part description

  • C = Thyristor (SCR)
  • L = High Efficiency Thyristor
  • A = (up to 1200V)
  • 60 = Current Rating [A]
  • MT = 1~ Triac
  • 1200 = Reverse Voltage [V]
  • N = Three Quadrants operation: QI – QIII
  • HR = ISO247 (3)

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA60MT1200NHR| CLA60MT1200NHR| Tube| 30| 513282

Similar Part Package Voltage class
CLA40MT1200NHR ISO247 (3) 1200
CLA80MT1200NHR ISO247 (3) 1200
CLA60MT1200NHB TO-247AD (3) 1200
CLA60MT1200NTZ TO-268AA (D3Pak) (2HV) 1200

Equivalent Circuits for Simulation

Outlines

Outlines ISO247

Dim.

| Millimeter| Inches
---|---|---
min| max| min| max
A| 4.70| 5.30| 0.185| 0.209
A1| 2.21| 2.59| 0.087| 0.102
A2| 1.50| 2.49| 0.059| 0.098
A3| typ. 0.05| typ. 0.002
b| 0.99| 1.40| 0.039| 0.055
b2| 1.65| 2.39| 0.065| 0.094
b4| 2.59| 3.43| 0.102| 0.135
c| 0.38| 0.89| 0.015| 0.035
D| 20.79| 21.45| 0.819| 0.844
D1| typ. 8.90| typ. 0.350
D2| typ. 2.90| typ. 0.114
D3| typ. 1.00| typ. 0.039
E| 15.49| 16.24| 0.610| 0.639
E1| typ. 13.45| typ. 0.530
E2| 4.31| 5.48| 0.170| 0.216
E3| typ. 4.00| typ. 0.157
e| 5.46 BSC| 0.215 BSC
L| 19.80| 20.30| 0.780| 0.799
L1| –| 4.49| –| 0.177
Ø P| 3.55| 3.65| 0.140| 0.144
Q| 5.38| 6.19| 0.212| 0.244
S| 6.14| BSC| 0.242| BSC

Thyristor

IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per semiconductor unless otherwise specified.

© 2020 IXYS all rights reserved

References

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