IXYS CLA60MT1200NHR High Efficiency Thyristor Owner’s Manual
- June 16, 2024
- IXYS
Table of Contents
- IXYS CLA60MT1200NHR High Efficiency Thyristor
- Product Information
- Product Usage Instructions
- Three Quadrants Operation
- Product Overview
- Features / Advantages
- Applications And Package
- Rectifier
- Part description
- Equivalent Circuits for Simulation
- Outlines
- Thyristor
- References
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
IXYS CLA60MT1200NHR High Efficiency Thyristor
Product Information
Specifications
- Part Number: CLA60MT1200NHR
- VRRM: 1200 V
- ITAV: 30 A
- VT: 1.25 V
- Three Quadrants Operation: QI – QIII
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
Rectifier Ratings
Symbol | Definition | Conditions | Typical Value | Maximum Value | Unit |
---|---|---|---|---|---|
VRSM/DSM | max. non-repetitive reverse/forward blocking voltage | 1300 V | V | ||
VRRM/DRM | max. repetitive reverse/forward blocking voltage | 1200 V | V | ||
IR/ID | reverse current, drain current | VR/D = 1200 V | 2 mA | ||
VT | forward voltage drop | IT = 30 A | 1.25 V | V | |
ITAV | average forward current | 30 A | A | ||
IRMS | RMS forward current per phase | 66 A | A | ||
VT0 | threshold voltage slope resistance | for power loss calculation only | 0.86 | ||
V | V | ||||
rT | thermal resistance junction to case | 12.5 m | K/W | ||
RthJC | thermal resistance case to heatsink | 0.9 K/W | K/W | ||
Ptot | total power dissipation | 140 W | W | ||
ITSM | max. forward surge current | 380 A | A | ||
CJ | junction capacitance | f = 1 MHz | 25 pF | pF | |
PGM | max. gate power dissipation | 10 W | W | ||
PGAV | average gate power dissipation | 5 W | W | ||
(di/dt)cr | critical rate of rise of current | repetitive, IT = 90 A | 0.5 W | W | |
(dv/dt)cr | critical rate of rise of voltage | IG = 0.3A; VD = VDRM | 150 V/μs |
V/μs
VGT| gate trigger voltage| VD = 6 V| 1.56 V| | V
IGT| gate trigger current| VD = 6 V| 1.25 V| | V
VGD| gate non-trigger voltage| VD = VDRM| 1.61 V| | V
IGD| gate non-trigger current| VD = 6 V RGK =| 30 A| | A
IL| latching current| | 66 A| | A
IH| holding current| | 410 A| | A
tgd| gate controlled delay time| t = 10 ms; (50 Hz), sine| 325 A| | ms
tq| turn-off time| t = 8.3 ms; (60 Hz), sine| 350 A| | ms
Product Usage Instructions
Installation
- Ensure that the power supply is turned off before installation.
- Mount the product securely on a PCB using the provided soldering pins.
- Make sure the connections are correct and secure.
- Double-check all connections before turning on the power supply.
Operation
The High Efficiency Thyristor is designed for three quadrants operation (QI – QIII). It can be used for line rectifying 50/60 Hz, softstart AC motor control, DC motor control, power converter, AC power control, lighting, and temperature
Applications
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
Packaging
- Package: ISO247
- Isolation Voltage: 3600 V~
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
- Soldering pins for PCB mounting
- Backside: DCB ceramic
- Reduced weight
- Advanced power cycling
VRRM = 1200 V
ITAV = 30 A
VT = 1,25V
Part number
- CLA60MT1200NHR
Three Quadrants Operation
Note: All Polarities are referenced to T1
Product Overview
Backside: isolated
Features / Advantages
- Triac for line frequency
- Three Quadrants Operation – QI – QIII
- Planar passivated chip
- Long-term stability of blocking currents and voltages
Applications And Package
Applications
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
Package: ISO247
- Isolation Voltage: 3 6 0 0 V~
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
- Soldering pins for PCB mounting
- Backside: DCB ceramic
- Reduced weight
- Advanced power cycling
Rectifier
Rectifier | Ratings |
---|---|
Symbol | **Definition |
Conditions** | |
V RSM/DSM | max. non-repetitive reverse/forward blocking voltage |
TVJ = 25°C | |
V RRM/DRM | max. repetitive reverse/forward blocking voltage |
TVJ = 25°C | |
I R/D | reverse current, drain current VR/D = 1200 V |
10 | |
VR/D = 1200 V | |
V T forward voltage drop | IT = 30 A |
TVJ = 25°C | |
I T = 60 A | 1,56 |
IT = 30 A TVJ = 125°C | |
1,25 | |
I T = 60 A | 1,61 |
I TAV | average forward current TC = 100°C |
A
I RMS| RMS forward current per phase 180° sine| | | 66| A
V T0
r T
| threshold voltage
slope resistance for power loss calculation only
| | TVJ = 150°C| | | 0,86| V
12,5| mΩ
R thJC| thermal resistance junction to case| | | | | 0,9| K/W
R thCH| thermal resistance case to heatsink| | | | 0,25| | K/W
P tot| total power dissipation| | TC = 25°C| | | 140| W
I TSM max. forward surge current| t = 10 ms; (50 Hz), sine
TVJ = 45°C| | | 380| A
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 410| A
| t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 325| A
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 350| A
I²t value for fusing| t = 10 ms; (50 Hz), sine
TVJ = 45°C| | | 720| A²s
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 700| A²s
| t = 10 ms; (50 Hz), sine TVJ = 150°C| | | 530| A²s
| t = 8,3 ms; (60 Hz), sine VR = 0 V| 510| A²s
C J| junction capacitance VR = 400V f = 1 MHz| | TVJ = 25°C| | 25|
| pF
P GM| max. gate power dissipation tP = 30 µs| | TC = 150°C| | |
10| W
| tP = 300 µs| | | 5| W
P GAV| average gate power dissipation| | | 0,5| W
(di/dt) cr| critical rate of rise of current TVJ = 150°C; f = 50
Hz
t = 200 µs; di /dt = 0,3
|
A/µs;
| repetitive, IT = 90 A| | | 150| A/µs
IG = 0,3A; VD = ⅔ VDRM non-repet., IT = 30 A| | |
500
|
A/µs
(dv/dt) cr critical rate of rise of voltage VD = ⅔ VDRM TVJ = 150°C
R GK = ∞; method 1 (linear voltage rise)
| | | 500| V/µs
V GT| gate trigger voltage VD = 6 V| | TVJ = 25°C| | | 1,7| V
| | | TVJ = -40°C| 1,9| V
I GT| gate trigger current VD = 6 V| | TVJ = 25°C| ± 60| mA
| | | TVJ = -40°C| ± 80| mA
V GD| gate non-trigger voltage VD = ⅔ VDRM| | TVJ = 150°C| | |
0,2| V
I GD| gate non-trigger current| | | ± 1| mA
I L latching current t p = 10 µs
TVJ = 25°C
IG = 0,3A; diG /dt = 0,3 A/µs
| | | 90| mA
I H| holding current VD = 6 V RGK = ∞| | TVJ = 25°C| | | 60| mA
t gd gate controlled delay time VD = ½ VDRM
TVJ = 25°C
IG = 0,3A; diG /dt = 0,3 A/µs
| | | 2| µs
t q turn-off time VR = 100 V; IT = 30A; VD = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs; dv/dt = 20 V/µs; tp = 200 µs
| | 150| | µs
Package
Package | ISO247 | Ratings |
---|---|---|
Symbol | **Definition | |
Conditions** | min. | |
I RMS | RMS current per terminal | |
T VJ | virtual junction temperature | |
T op | operation temperature | |
T stg | storage temperature | |
Weight | 6 | |
M D | mounting torque |
F
C
| mounting force with clip| | 20| 120| N
d Spp/App|
creepage distance on surface | striking distance through air
| terminal to terminal| 2,7| | | mm
d Spb/Apb| | terminal to backside| 4,1| mm
V
ISOL
| isolation voltage t = 1 second t = 1 minute|
50/60 Hz, RMS; IISOL ≤ 1 mA
| 3600| | | V
3000| V
Product Marking
Part description
- C = Thyristor (SCR)
- L = High Efficiency Thyristor
- A = (up to 1200V)
- 60 = Current Rating [A]
- MT = 1~ Triac
- 1200 = Reverse Voltage [V]
- N = Three Quadrants operation: QI – QIII
- HR = ISO247 (3)
Ordering| Ordering Number| Marking on Product| Delivery
Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA60MT1200NHR| CLA60MT1200NHR| Tube| 30| 513282
Similar Part | Package | Voltage class |
---|---|---|
CLA40MT1200NHR | ISO247 (3) | 1200 |
CLA80MT1200NHR | ISO247 (3) | 1200 |
CLA60MT1200NHB | TO-247AD (3) | 1200 |
CLA60MT1200NTZ | TO-268AA (D3Pak) (2HV) | 1200 |
Equivalent Circuits for Simulation
Outlines
Outlines ISO247
Dim.
| Millimeter| Inches
---|---|---
min| max| min| max
A| 4.70| 5.30| 0.185| 0.209
A1| 2.21| 2.59| 0.087| 0.102
A2| 1.50| 2.49| 0.059| 0.098
A3| typ. 0.05| typ. 0.002
b| 0.99| 1.40| 0.039| 0.055
b2| 1.65| 2.39| 0.065| 0.094
b4| 2.59| 3.43| 0.102| 0.135
c| 0.38| 0.89| 0.015| 0.035
D| 20.79| 21.45| 0.819| 0.844
D1| typ. 8.90| typ. 0.350
D2| typ. 2.90| typ. 0.114
D3| typ. 1.00| typ. 0.039
E| 15.49| 16.24| 0.610| 0.639
E1| typ. 13.45| typ. 0.530
E2| 4.31| 5.48| 0.170| 0.216
E3| typ. 4.00| typ. 0.157
e| 5.46 BSC| 0.215 BSC
L| 19.80| 20.30| 0.780| 0.799
L1| –| 4.49| –| 0.177
Ø P| 3.55| 3.65| 0.140| 0.144
Q| 5.38| 6.19| 0.212| 0.244
S| 6.14| BSC| 0.242| BSC
Thyristor
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747 and per semiconductor unless otherwise specified.
© 2020 IXYS all rights reserved
References
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>