IXYS CLA80MT1200NHR High Efficiency Thyristor Owner’s Manual

June 16, 2024
IXYS

IXYS CLA80MT1200NHR High Efficiency Thyristor

IXYS-CLA80MT1200NHR-High-Efficiency-Thyristor-product

Product Information

Specifications

  • Part Number: CLA80MT1200NHR
  • VRRM: 1200 V
  • ITAV: 40 A
  • VT: 1.26 V
  • Three Quadrants Operation: QI – QIII
  • Package: ISO247
  • Isolation Voltage: 3600 V~
  • RoHS Compliant: Yes
  • Epoxy meets UL 94V-0

Features/Advantages

  • Triac for line frequency
  • Three Quadrants Operation: QI – QIII
  • Planar passivated chip
  • Long-term stability of blocking currents and voltages
  • Backside: isolated
  • Reduced weight
  • Advanced power cycling

Applications

  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Rectifier Ratings

Symbol Definition Conditions Typical Value Maximum Value Unit
VRSM/DSM max. non-repetitive reverse/forward blocking voltage 1300 V V
VRRM/DRM max. repetitive reverse/forward blocking voltage 1200 V V
IR/ID reverse current, drain current VR/D = 1200 V 2 mA

Frequently Asked Questions (FAQ)

  • Can this product be used for line rectifying?
    Yes, this product is suitable for line rectifying at 50/60 Hz.

  • Is this product suitable for AC motor control?
    Yes, this product can be used for softstart AC motor control.

  • What is the isolation voltage of this product?
    The isolation voltage of this product is 3600 V~.

High Efficiency Thyristor

  • V RRM = 1200 V
  • TAV = 40 A
  • V T = 1,26 V

Three Quadrants operation: QI – QIII 1~ Triac

Part number
CLA80MT1200NHR

Overview

IXYS-CLA80MT1200NHR-High-Efficiency-Thyristor-fig-
\(1\) IXYS-CLA80MT1200NHR-High-Efficiency-
Thyristor-fig- \(2\)

Features/Advantages

  • Triac for line frequency
  • Three Quadrants Operation
    • QI – QIII
  • Planar passivated chip
  • Long-term stability of blocking currents and voltages

Applications

  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control

Package Content

ISO247

  • Isolation Voltage: 3 6 0 0 V~
  • Industry-standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Soldering pins for PCB mounting
  • Backside: DCB ceramic
  • Reduced weight
  • Advanced power cycling

Disclaimer Notice
The information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read the complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Rectifier

Rectifier Ratings
Symbol Definition Conditions

Unit
V RSM/DSM| max. non-repetitive reverse/forward blocking voltage TVJ = 25°C|  |  | 1300| V
V RRM/DRM| max. repetitive reverse/forward blocking voltage TVJ = 25°C|  |  | 1200| V
I R/D| reverse current, drain current               VR/D = 1200 V TVJ = 25°C|  |  | 10| µA
 | VR/D = 1200 V                                               TVJ = 125°C| 2| mA
V T ** forward voltage drop| IT =     40 A TVJ = 25°C|  |  | 1,30| V
 | I T =     80 A| 1,59| V
 | IT =     40 A                                                  TVJ = 125°C| |  | 1,26| V
 | I T =     80 A| 1,64| V
I TAV| average forward current                       TC = 100°C TVJ = 150°C|  |  | 40| A
I RMS| RMS forward current per phase           180° sine| 88| A
V T0**

r T

| threshold voltage TVJ = 150°C

slope resistance         for power loss calculation only

|  |  | 0,88| V
10| mΩ
R thJC| thermal resistance junction to case|  |  | 0,65| K/W
R thCH| thermal resistance case to heatsink|  | 0,25|  | K/W
P tot| total power dissipation TC  = 25°C|  |  | 190| W
I TSM ** max. forward surge current| t = 10 ms; (50 Hz), sine TVJ = 45°C|  |  | 520| A
 | t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 560| A
 | t = 10 ms; (50 Hz), sine                          TVJ = 150°C|  |  | 440| A
 | t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 475| A
I²t ** value for fusing| t = 10 ms; (50 Hz), sine TVJ = 45°C|  |  | 1,35| kA²s
 | t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 1,31| kA²s
 | t = 10 ms; (50 Hz), sine                          TVJ = 150°C|  |  | 970| A²s
 | t = 8,3 ms; (60 Hz), sine                          VR = 0 V| 940| A²s
C J| junction capacitance                            VR = 400V  f = 1 MHz TVJ = 25°C|  | 25|  | pF
P GM| max. gate power dissipation                 tP =  30 µs TC  = 150°C|  |  | 10| W
 | tP = 300 µs| 5| W
P GAV| average gate power dissipation| 0,5| W
(di/dt) cr| critical rate of rise of current                TVJ = 150°C; f = 50 Hz             repetitive, IT = 120 A|  |  | 150| A/µs
 | tP = 200 µs; diG /dt = 0,3 A/µs;|  |
 | IG =     0,3A; VD = ⅔ VDRM          non-repet., IT =  40 A| 500| A/µs
(dv/dt) cr| critical rate of rise of voltage                VD = ⅔ VDRM TVJ = 150°C

R GK = ∞; method 1 (linear voltage rise)

|  |  | 500| V/µs
V GT| gate trigger voltage                              VD = 6 V TVJ = 25°C|  |  | 1,7| V
 | TVJ = -40°C| 1,9| V
I GT| gate trigger current                              VD = 6 V TVJ = 25°C| ± 70| mA
 | TVJ = -40°C| ± 90| mA
V GD| gate non-trigger voltage                       VD = ⅔ VDRM TVJ = 150°C|  |  | 0,2| V
I GD| gate non-trigger current| ± 1| mA
I L| latching current                                    t p =     10 µs TVJ = 25°C

IG =     0,3A; diG/dt =  0,3 A/µs

|  |  | 100| mA
I H| holding current                                     VD = 6 V RGK = ∞ TVJ = 25°C|  |  | 70| mA
t gd| gate controlled delay time                     VD = ½ VDRM TVJ = 25°C

IG =     0,3A; diG/dt =     0,3 A/µs

|  |  | 2| µs
t q| turn-off time                                          VR = 100 V; IT =  40A; VD = ⅔ VDRM TVJ 125 °C

di/dt =  10 A/µs; dv/dt =      20 V/µs; tp = 200 µs

|  | 150|  | µs
Package| ISO247| Ratings
---|---|---
Symbol| Definition Conditions|  | min.| typ.| max.| Unit
I RMS| RMS current per terminal|  |  |  | 70| A
T VJ| virtual junction temperature|  | -55|  | 150| °C
T op| operation temperature|  | -55|  | 125| °C
T stg| storage temperature|  | -55|  | 150| °C
Weight|  | 6|  | g
M D| mounting torque|  | 0,8|  | 1,2| Nm
F

C

| mounting force with clip|  | 20| 120| N
d Spp/App|

creepage distance on surface | striking distance through air

| terminal to terminal| 2,7|  |  | mm
d Spb/Apb|  | terminal to backside| 4,1| mm
V

ISOL

| isolation voltage                                            t = 1 second t = 1 minute|

50/60 Hz, RMS; IISOL ≤ 1 mA

| 3600|  |  | V
3000| V

Part Description

  • C = Thyristor (SCR)
  • L = High-Efficiency Thyristor
  • A = (up to 1200V)
  • 80 = Current Rating [A]
  • MT = 1~ Triac
  • 1200 = Reverse Voltage [V]
  • N = Three Quadrants operation: QI – QIll
  • HR = ISO247 (3)

Product Marking

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| CLA80MT1200NHR| CLA80MT1200NHR| Tube| 30| 517123
Similar Part| Package| Voltage class
---|---|---
CLA40MT1200NHR| ISO247 (3)| 1200
CLA60MT1200NHR| ISO247 (3)| 1200
CLA80MT1200NHB| TO-247AD (3)| 1200

IXYS-CLA80MT1200NHR-High-Efficiency-Thyristor-fig-
\(4\)

Outlines

IXYS-CLA80MT1200NHR-High-Efficiency-Thyristor-fig-
\(5\)

Dim.

| Millimeter| Inches
---|---|---
min| max| min| max
A| 4.70| 5.30| 0.185| 0.209
A1| 2.21| 2.59| 0.087| 0.102
A2| 1.50| 2.49| 0.059| 0.098
A3| typ. 0.05| typ. 0.002
b| 0.99| 1.40| 0.039| 0.055
b2| 1.65| 2.39| 0.065| 0.094
b4| 2.59| 3.43| 0.102| 0.135
c| 0.38| 0.89| 0.015| 0.035
D| 20.79| 21.45| 0.819| 0.844
D1| typ. 8.90| typ. 0.350
D2| typ. 2.90| typ. 0.114
D3| typ. 1.00| typ. 0.039
E| 15.49| 16.24| 0.610| 0.639
E1| typ. 13.45| typ. 0.530
E2| 4.31| 5.48| 0.170| 0.216
E3| typ. 4.00| typ. 0.157
e| 5.46 BSC| 0.215 BSC
L| 19.80| 20.30| 0.780| 0.799
L1| –| 4.49| –| 0.177
Ø P| 3.55| 3.65| 0.140| 0.144
Q| 5.38| 6.19| 0.212| 0.244
S| 6.14| BSC| 0.242| BSC

Thyristor

IXYS-CLA80MT1200NHR-High-Efficiency-Thyristor-fig-
\(7\) IXYS-CLA80MT1200NHR-High-Efficiency-
Thyristor-fig- \(8\)

IXYS reserves the right to change limits, conditions, and dimensions. Data according to IEC 60747 and per semiconductor unless otherwise specified.

© 2020 IXYS all rights reserved.

References

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