IXYS DSEI2x31-10B Fast Recovery Epitaxial Diode Owner’s Manual

IXYS DSEI2x31-10B Fast Recovery Epitaxial Diode

Specifications

• Part number: DSEI2x31-10B
• VRRM: 1000 V
• IFAV: 2x 30 A
• t rr: 45 ns
• Isolation Voltage: 3000 V~
• Package: SOT-227B (minibloc)

Features / Advantages

• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behavior
• Very low Irm-values
• Very soft recovery behavior
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch

Applications

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free-wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package Information

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0 standards
• Base plate: Copper internally DCB isolated

Disclaimer Notice
Information furnished is believed to be accurate and reliable. Users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for all applications. Read the complete Disclaimer Notice at www.littelfuse.com /disclaimer-electronics.

FAQ

1. Can this diode be used in high-frequency applications?
   Yes, this diode is suitable for antiparallel diode for high frequency switching devices as per the product manual.

FRED

• VRRM: 1000 V
• IFAV: 2x 30 A
• t rr: 45 ns

Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs
Part number

DSEI2x31-10B

Features / Advantages:

• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low Irm-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces:
  • Power dissipation within the diode
  • Turn-on loss in the commutating switch

Applications

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package SOT-227B (minibloc)

• Isolation Voltage: 3 0 0 0 V~
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Base plate: Copper internally DCB isolated
• Advanced power cycling

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer electronics.

DSEI2x31-10B

M

T

| terminal torque| | | 1.1| 1.5| Nm
d Spp/App terminal to terminal

creepage distance on surface | striking distance through air

d Spb/Apb terminal to backside

| 10.5

8.6

| 3.2

6.8

| | | mm

mm

V

ISOL

| isolation voltage t = 1 second t = 1 minute|

50/60 Hz, RMS; IISOL ≤ 1 mA

| | 3000| | | V
2500| V

Product Marking

Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI2x31-10B| DSEI2x31-10B| Tube| 10| 456462
Similar Part| Package| Voltage class
---|---|---
DSEI2x30-10B| SOT-227B (minibloc)| 1000

Outlines SOT-227B (minibloc)

Fast Diode

Fig. 7 Transient thermal impedance junction to case

Constants for ZthJC calculation

• i Rthi (K/W) ti (s)
• 1 0.180 0.0050
• 2 0.020 0.0600
• 3 0.100 0.0010
• 4 0.400 0.1700
• 5 0.500 0.0230

IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified

References

• Product Disclaimer - Littelfuse

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