IXYS DSEI2x31-10B FRED Fast Recovery Epitaxial Diode Owner’s Manual

June 16, 2024
IXYS

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IXYS DSEI2x31-10B FRED Fast Recovery Epitaxial Diode

IXYS-DSEI2x31-10B-FRED-Fast-Recovery-Epitaxial-Diode-product-
image

Product Information

Specifications

  • Part Number: DSEI2x31-10B
  • VRRM : 1000 V
  • IFAV: 2x 30 A
  • trr: 45 ns
  • Backside: isolated
  • Package : SOT-227B (minibloc)
  • Isolation Voltage: 3000 V~
  • Base Plate : Copper internally DCB isolated

Features / Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

Product Usage Instructions

Mounting and Installation
To mount and install the DSEI2x31-10B diode, follow these steps:

  1. Ensure that the installation surface is clean and free of any debris.
  2. Place the diode in the desired location on the surface.
  3. Apply a mounting torque of 1.1 Nm to secure the diode in place.
  4. Check the creepage distance and striking distance to ensure proper isolation.
  5. Verify the isolation voltage using a tester with 50/60 Hz, RMS and IISOL of 1 mA.

Usage Recommendations
When using the DSEI2x31-10B diode, please keep the following recommendations in mind:

  • Ensure that the diode is operated within the specified RMS current rating of 70 A.
  • Maintain the virtual junction temperature within the recommended limits (-40°C to 30°C).
  • Store the diode in a cool and dry place with a storage temperature between -40°C and 30°C.

Product Marking
The DSEI2x31-10B diode can be identified by the following markings:

  • Product Marking: DSEI2x31-10B
  • Date Code: yywwZ (e.g., 2020 week 10)
  • Location Lot#: 123456
  • Ordering Standard: UL
  • Ordering Number: DSEI2x31-10B
  • Delivery Mode: Tube
  • Quantity Code No.: 10
  • Similar Part: DSEI2x30-10B

Frequently Asked Questions (FAQ)

  • Q: What is the maximum non-repetitive reverse blocking voltage of the DSEI2x31-10B diode?
    A: The maximum non-repetitive reverse blocking voltage is 1000 V.

  • Q: What is the average forward current rating of the DSEI2x31-10B diode?
    A: The average forward current rating is 2x 30 A.

  • Q: What is the reverse recovery time of the DSEI2x31-10B diode?
    A: The reverse recovery time is 45 ns. Q: What is the isolation voltage of the DSEI2x31-10B

  • diode?
    A: The isolation voltage is 3000 V~.

DSEI2x31-10B FRED

Fast Recovery Epitaxial Diode Low Loss and Soft Recovery Parallel legs

Part number
DSEI2x31-10B

Features / Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces:
    • Power dissipation within the diode
    • Turn-on loss in the commutating switch

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package: SOT-227B (minibloc)

  • Isolation Voltage: 3 0 0 0 V~
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics .

Fast Diode Ratings
Symbol Definition Conditions
max. Unit
V RSM max. non-repetitive reverse blocking voltage
1000
V RRM max. repetitive reverse blocking voltage
1000 V
I R reverse current, drain current VR = 1000 V

µA
| VR = 800 V| TVJ = 125°C| 7| mA
V F **forward voltage drop| IF =      30 A| TVJ = 25°C| | | 2.34| V
| IF =      60 A| | 2.64| V
| IF =      30 A| TVJ     150 °C| | | 1.98| V
| IF =      60 A| | 2.46| V
I FAV**| average forward current TC = 60°C

rectangular         d = 0.5

| TVJ = 150°C| | | 30| A
V F0

r F

| threshold voltage

for power loss calculation only

slope resistance

| TVJ = 150°C| | | 1.53| V
14.9| mΩ
R thJC| thermal resistance junction to case| | | | 1.2| K/W
R thCH| thermal resistance case to heatsink| | | 0.10| | K/W
P tot| total power dissipation| TC = 25°C| | | 105| W
I FSM **max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45°C| | | 200| A
C J| junction capacitance VR = 600 V  f = 1 MHz| TVJ = 25°C| | 16| | pF
I RM| max. reverse recovery current| TVJ = 25 °C| | 9| | A
| IF =  30 A; VR = 540 V| TVJ = 100 °C| 13| A
t rr| reverse recovery time -diF/dt = 200 A/µs| TVJ = 25 °C| | 90| | ns
| | TVJ = 100 °C| 150| ns
Package SOT-227B (minibloc)| Ratings
---|---
Symbol| Definition Conditions| | | min.| typ.| max.| Unit
I RMS| RMS current per terminal| | | | | 70| A
T VJ| virtual junction temperature| | | -40| | 150| °C
T op| operation temperature| | | -40| | 125| °C
T stg| storage temperature| | | -40| | 150| °C
Weight| | 30| | g
M D| mounting torque| | | 1.1| | 1.5| Nm
M**

T

| terminal torque| | | 1.1| 1.5| Nm

  • d Spp/App ****terminal to terminal creepage distance on surface | striking distance through air
  • d Spb/Apb ****terminal to backside

| 10.5

8.6

| 3.2

6.8

| | | mm

mm

V ISOL| isolation voltage t = 1 second t = 1 minute| 50/60 Hz, RMS; IISOL ≤ 1 mA| | 3000| | | V
2500| V

Product Marking

IXYS-DSEI2x31-10B-FRED-Fast-Recovery-Epitaxial-Diode-01
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Ordering| Ordering Number| Marking on Product| Delivery Mode| Quantity| Code No.
---|---|---|---|---|---
Standard| DSEI2x31-10B| DSEI2x31-10B| Tube| 10| 456462
Similar Part| Package| Voltage class
---|---|---
DSEI2x30-10B| SOT-227B (minibloc)| 1000

IXYS-DSEI2x31-10B-FRED-Fast-Recovery-Epitaxial-Diode-01
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Outlines SOT-227B (minibloc)

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Fast Diode

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IXYS-DSEI2x31-10B-FRED-Fast-Recovery-Epitaxial-Diode-01
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IXYS-DSEI2x31-10B-FRED-Fast-Recovery-Epitaxial-Diode-01
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Constants for ZthJC calculation:

i Rthi (K/W) ti (s)
1 0.180 0.0050
2 0.020 0.0600
3 0.100 0.0010
4 0.400 0.1700
5 0.500 0.0230
  • IXYS reserves the right to change limits, conditions and dimensions.
  • Data according to IEC 60747and per semiconductor unless otherwise specified
  • © 2020 IXYS all rights reserved

References

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