ONSEMI NVHL080N120SC1 Silicon Carbide SiC MOSFET User Guide
- June 15, 2024
- onsemi
Table of Contents
ONSEMI NVHL080N120SC1 Silicon Carbide SiC MOSFET
Features
- Typ. RDS(on) = 80 mΩ
- Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
- Low Effective Output Capacitance (typ. Coss = 80 pF)
- 100% UIL Tested
- AEC−Q101 Qualified and PPAP Capable
- This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second-level interconnection)
Typical Applications
- Automotive On Board Charger
- Automotive DC−DC converter for EV/HEV
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 1200 | V |
| Gate−to−Source Voltage | VGS | −15/+25 | V |
| Recommended Opera- tion Values of Gate−to− Source Voltage | TC < 175°C | VGSop | |
| −5/+20 | V | ||
| Continuous Drain Current R8JC | Steady State | TC = 25°C | ID |
| Power Dissipation R8JC | PD | 178 | W |
| Continuous Drain Current R8JC | Steady State | TC = 100°C | ID |
| Power Dissipation R8JC | PD | 89 | W |
| Pulsed Drain Current (Note 2) | TA = 25°C | IDM | 132 |
| Single Pulse Surge Drain Current Capability | TA = 25°C, tp = 10 µs, RG = 4.7 | ||
| Q | IDSC | 132 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to |
+175
| °C
Source Current (Body Diode)| IS| 18| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.5 A, L = 1 mH)
(Note 3)| EAS| 171| mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case (Note 1) | R8JC | 0.84 | °C/W |
| Junction−to−Ambient (Note 1) | R8JA | 40 | °C/W |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Repetitive rating, limited by max junction temperature.
- EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V.
V (BR)DSS| R DS(on) MAX| I D MAX
---|---|---
1200 V| 110 mQ @ 20 V| 31 A
N−CHANNEL MOSFET
MARKING DIAGRAM
ORDERING INFORMATION
| Device | Package | Shipping |
|---|---|---|
| NVHL080N120SC1 | TO247−3L | 30 Units / Tube |
CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
Parameter| Symbol| Test Conditions| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS =0 V, ID = 1 mA| 1200| −| −|
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID = 1
mA, referenced to 25 C| −| 700| −| mV/ C
Zero Gate Voltage Drain Current| IDSS| VGS =0 V, VDS = 1200 V, TJ = 25 C| −|
−| 100| µA
VGS =0 V, VDS = 1200 V, TJ = 175 C| −| −| 1| mA
Gate−to−Source Leakage Current| IGSS| VGS = +25/−15 V, VDS =0V| −| −| ±1| µA
ON CHARACTERISTICS
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 5 mA | 1.8 | 2.7 | 4.3 | V |
|---|---|---|---|---|---|---|
| Recommended Gate Voltage | VGOP | −5 | − | +20 | V | |
| Drain−to−Source On Resistance | RDS(on) | VGS = 20 V, ID = 20 A, TJ = 25 C | − | |||
| 80 | 110 | mQ | ||||
| VGS = 20 V, ID = 20 A, TJ = 150 C | − | 114 | − | |||
| Forward Transconductance | gFS | VDS = 20 V, ID = 20A | − | 13 | − | S |
CHARGES, CAPACITANCES & GATE RESISTANCE
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 800 V | − | 1112 | − | pF |
|---|---|---|---|---|---|---|
| Output Capacitance | COSS | − | 80 | − | ||
| Reverse Transfer Capacitance | CRSS | − | 6.5 | − | ||
| Total Gate Charge | QG(tot) | VGS = −5/20 V, VDS = 600 V, ID = 20A | − | 56 | − | nC |
| Gate−to−Source Charge | QGS | − | 11 | − | ||
| Gate−to−Drain Charge | QGD | − | 12 | − | ||
| Gate Resistance | RG | f = 1 MHz | − | 1.7 | − | Q |
SWITCHING CHARACTERISTICS
Turn-On Delay Time| td(on)| VGS = −5/20 V, VDS = 800 V, ID = 20 A, RG = 4.7 Q,
Inductive Load
| −| 13| −| ns
---|---|---|---|---|---|---
Rise Time| tr| −| 20| −|
Turn−Off Delay Time| td(off)| −| 22| −|
Fall Time| tf| −| 10| −|
Turn-On Switching Loss| EON| −| 258| −| µJ
Turn-Off Switching Loss| EOFF| −| 52| −|
Total Switching Loss| ETOT| −| 311| −|
DRAIN−SOURCE DIODE CHARACTERISTICS
Continuous Drain−to−Source Diode Forward Current| ISD| VGS = −5 V, TJ = 25 C|
−| −| 18| A
---|---|---|---|---|---|---
Pulsed Drain−to−Source Diode Forward Current (Note 2)| ISDM| VGS = −5 V, TJ =
25 C| −| −| 132| A
Forward Diode Voltage| VSD| VGS = −5 V, ISD = 10 A, TJ = 25 C| −| 4| −| V
Reverse Recovery Time| tRR| VGS = −5/20 V, ISD = 20 A,
dIS/dt = 1000 A/µs
| −| 16| −| ns
Reverse Recovery Charge| QRR| −| 62| −| nC
Reverse Recovery Energy| EREC| −| 5| −| µJ
Peak Reverse Recovery Current| IRRM| −| 8| −| A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
PACKAGE DIMENSIONS
DOCUMENT NUMBER: 98AON93302G
DESCRIPTION: TO−247−3LD
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