ONSEMI NVHL080N120SC1 Silicon Carbide SiC MOSFET User Guide

ONSEMI NVHL080N120SC1 Silicon Carbide SiC MOSFET

Features

• Typ. RDS(on) = 80 mΩ
• Ultra Low Gate Charge (typ. QG(tot) = 56 nC)
• Low Effective Output Capacitance (typ. Coss = 80 pF)
• 100% UIL Tested
• AEC−Q101 Qualified and PPAP Capable
• This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second-level interconnection)

Typical Applications

• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

+175

| °C
Source Current (Body Diode)| IS| 18| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18.5 A, L = 1 mH) (Note 3)| EAS| 171| mJ

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 171 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18.5 A, VDD = 120 V, VGS = 18 V.
   V (BR)DSS| R DS(on) MAX| I D MAX
   ---|---|---
   1200 V| 110 mQ @ 20 V| 31 A

N−CHANNEL MOSFET

MARKING DIAGRAM

ORDERING INFORMATION

CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

Parameter| Symbol| Test Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS =0 V, ID = 1 mA| 1200| −| −| V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID = 1 mA, referenced to 25 C| −| 700| −| mV/ C
Zero Gate Voltage Drain Current| IDSS| VGS =0 V, VDS = 1200 V, TJ = 25 C| −| −| 100| µA
VGS =0 V, VDS = 1200 V, TJ = 175 C| −| −| 1| mA
Gate−to−Source Leakage Current| IGSS| VGS = +25/−15 V, VDS =0V| −| −| ±1| µA

ON CHARACTERISTICS

CHARGES, CAPACITANCES & GATE RESISTANCE

SWITCHING CHARACTERISTICS

Turn-On Delay Time| td(on)| VGS = −5/20 V, VDS = 800 V, ID = 20 A, RG = 4.7 Q,

Inductive Load

| −| 13| −| ns
---|---|---|---|---|---|---
Rise Time| tr| −| 20| −|
Turn−Off Delay Time| td(off)| −| 22| −|
Fall Time| tf| −| 10| −|
Turn-On Switching Loss| EON| −| 258| −| µJ
Turn-Off Switching Loss| EOFF| −| 52| −|
Total Switching Loss| ETOT| −| 311| −|

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−to−Source Diode Forward Current| ISD| VGS = −5 V, TJ = 25 C| −| −| 18| A
---|---|---|---|---|---|---
Pulsed Drain−to−Source Diode Forward Current (Note 2)| ISDM| VGS = −5 V, TJ = 25 C| −| −| 132| A
Forward Diode Voltage| VSD| VGS = −5 V, ISD = 10 A, TJ = 25 C| −| 4| −| V
Reverse Recovery Time| tRR| VGS = −5/20 V, ISD = 20 A,

dIS/dt = 1000 A/µs

| −| 16| −| ns
Reverse Recovery Charge| QRR| −| 62| −| nC
Reverse Recovery Energy| EREC| −| 5| −| µJ
Peak Reverse Recovery Current| IRRM| −| 8| −| A

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

PACKAGE DIMENSIONS

DOCUMENT NUMBER: 98AON93302G
DESCRIPTION: TO−247−3LD
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