onsemi NVBLS001N06C Power Single N-Channel MOSFET Instruction Manual
- June 3, 2024
- onsemi
Table of Contents
www.onsemi.com
MOSFET – Power, Single
N-Channel, TOLL
60 V, 0.9 mΩ, 422 A
NVBLS001N06C
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDss | 60 | V |
| Gate-to-Source Voltage | VG5 | +20 | V |
| Continuous Drain Current Fin jc (Note 2) | Steady | ||
| State | Tc = 25 C | ID | 422 |
| Tc = 100 C | 298 | ||
| Power Dissipation R,, jc (Note 2) | Tc = 25 C | PD | 284 |
| Tc = 100 C | 142 |
Continuous Drain Current RUA
(Notes 1, 2)| Steady Sta State| TA = 25 C| ID| 51| A
TA = 100 C| 36
Power Dissipation R,,,,, (Notes 1, 2)| TA = 25 C| PD| 4.| W
TA= 100 C| 2.
Pulsed Drain Current| TA = 25 C, tp = 10 «s| IoM| 900| A
Operating Junction and Storage Temperature Range| T j, Ts,| -55 to
+175| C
Source Current (Body Diode)| is| 236| A
Single Pulse Drain-to-Source Avalanche Energy (I,5, = 39 A)| EAS| 1640| mJ
Lead Temperature Soldering Reflow for Solder- ing Purposes (1/8″ from case for
10 s)| TL| 260| C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction-to-Case – Steady State (Note 2) | ReJC | 0.53 | °C/W |
| Junction-to-Ambient – Steady State (Note 2) | RHEA | 36 |
- Surface−mounted on FR4 board using a 1 in² pad size, 2 oz. Cu pad.
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 60 V | 0.9 mΩ @ 10 V | 422 A |
H−PSOF8L CASE 100CU
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NVBLS001N06C | H−PSOF8L (Pb−Free) | 2000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation
and tape sizes, please refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter| Symbol| Test Conditions| Min| Typ|
Max| Units
---|---|---|---|---|---|---
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | ID = 250 µA, VGS = 0 V | 60 | V | ||
|---|---|---|---|---|---|---|
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | ID = | ||||
| 562 µA, ref to 25°C | 26 | mV/°C | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS = 60 V, VGS = 0 V | TJ = 25°C | |||
| 10 | µA | |||||
| TJ = 125°C | 100 | µA | ||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA |
ON CHARACTERISTICS (Note 3)
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 562 µA | 2.0 | 2.8 | 4.0 | V |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(th)/TJ | ID = 562 µA, ref to | ||||
| 25°C | 9.9 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 80 A | 0.75 | 0.9 | mΩ | |
| Forward Transconductance | gFS | VDS = 5 V, ID = 80 A | 290 | S |
CHARGES & CAPACTIANCES
| Input Capacitance | Ciss | VGS = 0 V, VDS = 30 V, f = 10 kHz | 11575 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | Coss | 5973 | pF | |||
| Reverse Transfer Capacitance | Crss | 76 | pF | |||
| Total Gate Charge | QG(tot) | VGS = 10 V, VDS = 30 V, ID = 80 A | 143 | nC | ||
| Threshold Gate Charge | QG(th) | 31 | nC | |||
| Gate−to−Source Charge | Qgs | 54 | nC | |||
| Gate−to−Drain Charge | Qgd | 13 | nC |
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time| td(on)| VGS = 10 V, VDS = 30 V, ID = 80 A, RG = 6 Ω| | 34|
| ns
---|---|---|---|---|---|---
Rise Time| tr| | 53| | ns
Turn−Off Delay Time| td(off)| | 119| | ns
Fall Time| tf| | 91| | ns
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | IS = 80 A, VGS = 0 V | TJ = 25°C | 0.79 | 1.2 | V | |
|---|---|---|---|---|---|---|---|
| IS = 80 A, VGS = 0 V | TJ = 125°C | 0.66 | V | ||||
| Reverse Recovery Time | trr | VGS = 0 V, dIS/dt = 100 A/µs, IS = 56 A | 120 |
ns
Charge Time| ta| | 60| | ns
Discharge Time| tb| | 60| | ns
Reverse Recovery Charge| Qrr| | 322| | nC
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under
different conditions.
3. Switching characteristics are independent of operating junction
temperatures
TYPICAL CHARACTERISTICS
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H−PSOF8L 11.68×9.80 CASE 100CU ISSUE B
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Assembly Lot Code
XXXX = Specific Device Code
LAND PATTERN RECOMMENDATION
*FOR ADDITIONAL INFORMATION ON OUR PB-FREE STRATEGY AND SOLDERING DETAILS, PLEASE DOWNLOAD THE ON SEMICONDUCTOR SOLDERING AND MOUNTING TECHNIQUES REFERENCE MANUAL, SOLDERRM/D.
NOTES:
- PACKAGE STANDARD REFERENCE: JEDEC MO-299, ISSUE A.
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2009.
- CONTROLLING DIMENSION: MILLIMETERS.
- COPLANARITY APPLIES TO THE EXPOSED WELL AS THE TERMINALS.
- DIMENSIONS D1 AND El DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
- SEATING PLANE IS DEFINED BY THE TERMINALS. “Al” IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY.
| DIM | MILLIMETERS |
|---|---|
| MIN. | NOM. |
| A | 2.20 |
| Al | 1.70 |
| b | 0.70 |
| bl | 8.00 REF |
| c | 0.40 |
| CI | 0.10 |
| D | 9.70 |
| D1 | 9.80 |
| D2 | 4.73 BSC |
| D3 | 0.40 REF |
| D4 | 3.75 BSC |
| D5 | — |
| D6 | 7.40 |
| D7 | 8.30 REF |
| E | 12. |
| El | 10. |
| E2 | 0.60 |
| E3 | 3.30 REF |
| E4 | — |
| E5 | — |
| DIM | MILLIMETERS |
| --- | --- |
| MIN. | NOM. |
| E6 | — 0.65 — |
| E7 | 7.15 REF |
| E8 | 6.55 |
| E9 | 5.89 BSC |
| E10 | 5.19 BSC |
| E11 | 0.10 REF |
| e | 1.20 BSC |
| e/2 | 0.60 BSC |
| e1 | 8.40 BSC |
| K | 2.83 |
| L | 1.90 |
| L2 | 0.50 |
| z | 0.35 REF |
| e | 0° |
| aaa | 0.20 |
| bbb | 0.25 |
| ccc | 0.20 |
| ddd | 0.20 |
| eee | 0.10 |
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ♦”, may or may not be present. Some products may not follow the Generic Marking.
DOCUMENT NUMBER:| 98AON13813G| Electronic versions are uncontrolled except
when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in
red.
---|---|---
DESCRIPTION:| H−PSOF8L 11.68×9.80
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