ON Semiconductor FDBL9406-F085T6 Single Power N Channel MOSFET Instruction Manual
- June 9, 2024
- ON Semiconductor
Table of Contents
ON Semiconductor FDBL9406-F085T6 Single Power N Channel MOSFET
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 40 | V |
| Gate−to−Source Voltage | VGS | +20/−16 | V |
| Continuous Drain Current RSJC (Note 2) |
Steady State
| TC = 25°C| ID| 240| A
TC = 100°C| 179.4
Power Dissipation RSJC (Note 2)| TC = 25°C| PD| 136.4| W
TC = 100°C| 68.2
Continuous Drain Current RSJA (Notes 1, 2)|
Steady State
| TA = 25°C| ID| 45| A
TA = 100°C| 31.8
Power Dissipation RSJA (Notes 1, 2)| TA = 25°C| PD| 4.3| W
TA = 100°C| 2.1
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 2817| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to
+175
| °C
Source Current (Body Diode)| IS| 221| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 42.5 A)| EAS| 271| mJ
Lead Temperature Soldering Reflow for Solder- ing Purposes (1/8² from case for
10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 2) | RSJC | 1.1 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 35 |
- Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz. Cu
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| FDBL9406−F085T6 | H−PSOF8L |
(Pb−Free)
| 2000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Table 1. ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Parameter| Symbol| Test Conditions| Min| Typ|
Max| Units
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| ID = 250 µA, VGS = 0 V| 40| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID =
250 µA, VGS = 0 V| | 24.9| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VDS = 40 V, VGS = 0 V| TJ = 25°C| | |
10| µA
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = +20/−16 V| | | ±100|
nA
ON CHARACTERISTICS (Note 3)
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 190 µA | 2 | 2.8 | 3.5 | V |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(th)/TJ | −6.9 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 50 A | 1.1 | 1.21 |
mQ
Forward Transconductance| gFS| VDS = 15 V, ID = 50 A| | 143| | S
CHARGES & CAPACTIANCES
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 4960 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | Coss | 2800 | pF | |||
| Reverse Transfer Capacitance | Crss | 62 | pF | |||
| Total Gate Charge | QG(tot) | VGS = 10 V, VDS = 20 V, ID = 50 A | 75 | nC | ||
| Threshold Gate Charge | QG(th) | 9 | nC | |||
| Gate−to−Source Charge | Qgs | 22 | nC | |||
| Gate−to−Drain Charge | Qgd | 16 | nC |
SWITCHING CHARACTERISTICS, V GS = 10 V (Note 3)
Turn−On Delay Time| td(on)| VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 6 Q| |
27| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 44| | ns
Turn−Off Delay Time| td(off)| | 61| | ns
Fall Time| tf| | 26| | ns
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | IS = 50 A, VGS = 0 V | TJ = 25°C | 0.8 | 1.2 | V | |
|---|---|---|---|---|---|---|---|
| IS = 50 A, VGS = 0 V | TJ = 125°C | 0.6 | V | ||||
| Reverse Recovery Time | trr | VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A | 78 |
ns
Charge Time| ta| | 39| | ns
Discharge Time| tb| | 39| | ns
Reverse Recovery Charge| Qrr| | 101| | nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.3 Switching characteristics are independent of operating junction temperatures
TYPICAL CHARACTERISTICS
PACKAGE DIMENSIONS
- A = Assembly Location
- Y = Year
- WW = Work Week
- ZZ = Assembly Lot Code
- XXXX = Specific Device Code
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “.”, may or may not be present. Some products may not follow the Generic Marking
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