ON Semiconductor NTMFS006N12MC Single Power N Channel 12V MOSFET Instructions
- June 9, 2024
- ON Semiconductor
Table of Contents
ON Semiconductor NTMFS006N12MC Single Power N Channel 12V MOSFET
Instructions
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Soft Body Diode Reduces Voltage Ringing
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 120 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RθJC (Notes 1, 3) | **** Steady State | TC = 25°C | |
| ID | 93 | A | |
| TC = 100°C | 58 | ||
| Power Dissipation RθJC (Note 1) | TC = 25°C | PD | 104 |
| TC = 100°C | 41 | ||
| Continuous Drain Current RθJA (Notes 1, 2, 3) | **** Steady State | TA = | |
| 25°C | ID | 15 | A |
| TA = 100°C | 9 | ||
| Power Dissipation RθJA (Notes 1, 2) | TA = 25°C | PD | 2.7 |
| TA = 100°C | 1.1 | ||
| Pulsed Drain Current | TA = 25°C, tp = 100 µs | IDM | 522 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to+ 150 | °C |
| Source Current (Body Diode) | IS | 86 | A |
| Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 49A) | EAS | 120 | mJ |
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not
be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State | RθJC | 1.2 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RθJA | 45 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| **** 120 V | 6.0 mΩ @ 10 V | **** 93 A |
13 mΩ @ 6.0 V
N−CHANNEL MOSFET
(SO−8FL) CASE 488AA STYLE 1
MARKING DIAGRAM
ORDERING INFORMATION
**** See detailed ordering, marking and shipping information on page 5
of this data sheet.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 120| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/ TJ| ID =
250 A, ref to 25°C| | 32| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 120 V| TJ = 25°C| | |
1| **** µA
TJ = 125°C| | | 100
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = ±20 V| | | ±100| nA
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 260 µA | 2.0 | 4.0 | V | |
|---|---|---|---|---|---|---|
| Threshold Temperature Coefficient | VGS(TH)/TJ | ID = 250 A, ref to 25°C | ||||
| −9.6 | mV/°C | |||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 46 A | 5.0 | 6.0 | |
| VGS = 6.0 V | ID = 23 A | 7.2 | 13 | mΩ | ||
| Forward Transconductance | gFS | VDS =15 V, ID = 46 A | 130 | S |
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance| CISS| VGS = 0 V, f = 1 MHz, VDS = 60 V| | 3365| |
pF
---|---|---|---|---|---|---
Output Capacitance| COSS| | 1490|
Reverse Transfer Capacitance| CRSS| | 5.8|
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 60 V; ID = 46 A| | 42| |
**** nC
Threshold Gate Charge| QG(TH)| **** VGS = 6.0 V, VDS = 60 V; ID = 46 A| |
10.0|
Gate−to−Source Charge| QGS| | 16|
Gate−to−Drain Charge| QGD| | 6.3|
Plateau Voltage| VGP| | 5.0| | V
Total Gate Charge| QG(TOT)| | 26| | nC
Output Charge| QOSS| VGS = 0 V, VDS = 60 V| | 122| | nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)| VGS = 10 V, VDS = 60 V, ID = 46 A, RG = 2.5 Ω| | 19| |
ns
---|---|---|---|---|---|---
Rise Time| tr| | 5.6|
Turn−Off Delay Time| td(OFF)| | 28|
Fall Time| tf| | 5.7|
DRAIN−SOURCE DIODE CHARACTERISTICS
Turn−On Delay Time| td(ON)| VGS = 10 V, VDS = 60 V, ID = 46 A, RG = 2.5 Ω| | 19| |
ns
---|---|---|---|---|---|---
Rise Time| tr| | 5.6|
Turn−Off Delay Time| td(OFF)| | 28|
Fall Time| tf| | 5.7|
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: pulse width 300 s, duty cycle 2%.
- Switching characteristics are independent of operating junction temperatures
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in Avalanche
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping † |
|---|---|---|---|
| NTMFS006N12MCT1G | 06N12C | DFN5(Pb−Free) | 1500 / Tape & Reel |
†For information on tape and reel specifications, including part orientation
and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PACKAGE DIMENSIONS
**SCALE 2:1
**
DFN5 5×6, 1.27P (SO−8FL) CASE 488AA ISSUE N
- For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D
NOTES
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- CONTROLLING DIMENSION: MILLIMETER.
-
- DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.
DIM
| MILLIMETERS
---|---
MIN| NOM| MAX
A| 0.90| 1.00| 1.10
A1| 0.00| −−−| 0.05
b| 0.33| 0.41| 0.51
c| 0.23| 0.28| 0.33
D| 5.00| 5.15| 5.30
D1| 4.70| 4.90| 5.10
D2| 3.80| 4.00| 4.20
E| 6.00| 6.15| 6.30
E1| 5.70| 5.90| 6.10
E2| 3.45| 3.65| 3.85
e| 1.27 BSC
G| 0.51| 0.575| 0.71
K| 1.20| 1.35| 1.50
L| 0.51| 0.575| 0.71
L1| 0.125 REF
M| 3.00| 3.40| 3.80
θ| 0 °| −−−| 12 °
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
- This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking
DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled
except when accessed directly from the Document Repository. Printed versions
are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO−8FL)| PAGE 1 OF 1
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