ON Semiconductor NVBGS4D1N15MC Single N-Channel MOSFET Owner’s Manual
- August 14, 2024
- ON Semiconductor
Table of Contents
MOSFET – Single N-Channel
150 V, 4.1 mΩ, 185 A
NVBGS 4D 1N 15MC
NVBGS4D1N15MC Single N-Channel MOSFET
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 150 V | 4.1 mΩ @ 10 V | 185 A |
4.7 mΩ @ 8 V
N−CHANNEL MOSFET
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NVBGS4D1N15MC | D2PAK7 (Pb−Free) | 800 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 150 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RθJC (Note 2) | Steady State | TC = 25°C | ID |
| Power Dissipation RθJC (Note 2) | PD | 316 | W |
| Continuous Drain Current RθJA (Notes 1, 2) | Steady State | TA = 25°C | ID |
| Power Dissipation RθJA (Notes 1, 2) | PD | 3.7 | W |
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 2564 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to +175 | °C |
| Source Current (Body Diode) | IS | 263 | A |
| Single Pulse Drain−to−Source Avalanche Energy (IL = 81.5 Apk, L = 0.1 mH) | |||
| EAS | 332 | mJ | |
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad.
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 2) | RθJC | 0.5 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RθJA | 40 |
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 150| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID =
250 µA, referenced to 25°C| | 20.28| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 120 V| TJ = 25°C| | |
1| µA
TJ = 125°C| | | 10| µA
Gate−to−Source Leakage Current| IGSS| VGS = ±20 V, VDS = 0 V| | | ±100| nA
ON CHARACTERISTICS (Note 3)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 574 µA | 2.5 | 3.5 | 4.5 | V |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | ID = 250 µA, | ||||
| referenced to 25°C | −10.21 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 104 A | 3.3 | 4.1 | mΩ | |
| VGS = 8 V, ID = 52 A | 3.5 | 4.7 | ||||
| Forward Transconductance | gFS | VDS = 5 V, ID = 90 A | 10.9 | S | ||
| Gate−Resistance | RG | TA = 25°C | 1.2 | Ω |
CHARGES & CAPACITANCES
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 75 V | 7285 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | COSS | 2025 | ||||
| Reverse Transfer Capacitance | CRSS | 10.6 | ||||
| Total Gate Charge | QG(TOT) | VGS = 10 V, VDS = 75 V, ID = 104 A | 88.9 | nC | ||
| Threshold Gate Charge | QG(TH) | 22.8 | ||||
| Gate−to−Source Charge | QGS | 37.5 | ||||
| Gate−to−Drain Charge | QGD | 13.0 | ||||
| Output Charge | QOSS | VGS = 0 V, VDS = 75 V | 272 | nC |
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time| td(ON)| VGS = 10 V, VDS = 75 V, ID = 104 A, RG = 6 Ω| |
49| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 38|
Turn−Off Delay Time| td(OFF)| | 64|
Fall Time| tf| | 10|
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | VGS = 0 V, IS = 104 A, TJ = 25°C | 0.88 | 1.2 | V | |
|---|---|---|---|---|---|---|
| VGS = 0 V, IS = 104 A, TJ = 125°C | 0.79 | |||||
| Reverse Recovery Time | tRR | VGS = 0 V, IS = 104 A, dIS/dt = 100 A/µs | 89 |
ns
Charge Time| ta| | 47|
Discharge Time| tb| | 42|
Reverse Recovery Charge| QRR| | 164| | nC
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under
different conditions.
3. Switching characteristics are independent of operating junction
temperature
TYPICAL CHARACTERISTICS
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DOCUMENT NUMBER: 98AON13798G
Electronic versions are uncontrolled except when accessed directly from the
Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in
red.
DESCRIPTION:
PAGE 1 OF 1D2PAK7 (TO−263 7 LD)
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