ON Semiconductor NVBGS4D1N15MC Single N-Channel MOSFET Owner’s Manual
- August 14, 2024
- ON Semiconductor
Table of Contents
MOSFET – Single N-Channel
150 V, 4.1 mΩ, 185 A
NVBGS 4D 1N 15MC
NVBGS4D1N15MC Single N-Channel MOSFET
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 150 V | 4.1 mΩ @ 10 V | 185 A |
4.7 mΩ @ 8 V
N−CHANNEL MOSFET
XXXX = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NVBGS4D1N15MC | D2PAK7 (Pb−Free) | 800 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Typical Applications
- Power Tools, Battery Operated Vacuums
- UAV/Drones, Material Handling
- BMS/Storage, Home Automation
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 150 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RθJC (Note 2) | Steady State | TC = 25°C | ID |
| Power Dissipation RθJC (Note 2) | PD | 316 | W |
| Continuous Drain Current RθJA (Notes 1, 2) | Steady State | TA = 25°C | ID |
| Power Dissipation RθJA (Notes 1, 2) | PD | 3.7 | W |
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 2564 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to +175 | °C |
| Source Current (Body Diode) | IS | 263 | A |
| Single Pulse Drain−to−Source Avalanche Energy (IL = 81.5 Apk, L = 0.1 mH) | |||
| EAS | 332 | mJ | |
| Lead Temperature for Soldering Purposes (1/8² from case for 10 s) | TL | 260 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Surface−mounted on FR4 board using a 1 in2, 1 oz. Cu pad.
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 2) | RθJC | 0.5 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RθJA | 40 |
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 150| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID =
250 µA, referenced to 25°C| | 20.28| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 120 V| TJ = 25°C| | |
1| µA
TJ = 125°C| | | 10| µA
Gate−to−Source Leakage Current| IGSS| VGS = ±20 V, VDS = 0 V| | | ±100| nA
ON CHARACTERISTICS (Note 3)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 574 µA | 2.5 | 3.5 | 4.5 | V |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | ID = 250 µA, | ||||
| referenced to 25°C | −10.21 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 104 A | 3.3 | 4.1 | mΩ | |
| VGS = 8 V, ID = 52 A | 3.5 | 4.7 | ||||
| Forward Transconductance | gFS | VDS = 5 V, ID = 90 A | 10.9 | S | ||
| Gate−Resistance | RG | TA = 25°C | 1.2 | Ω |
CHARGES & CAPACITANCES
| Input Capacitance | CISS | VGS = 0 V, f = 1 MHz, VDS = 75 V | 7285 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | COSS | 2025 | ||||
| Reverse Transfer Capacitance | CRSS | 10.6 | ||||
| Total Gate Charge | QG(TOT) | VGS = 10 V, VDS = 75 V, ID = 104 A | 88.9 | nC | ||
| Threshold Gate Charge | QG(TH) | 22.8 | ||||
| Gate−to−Source Charge | QGS | 37.5 | ||||
| Gate−to−Drain Charge | QGD | 13.0 | ||||
| Output Charge | QOSS | VGS = 0 V, VDS = 75 V | 272 | nC |
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time| td(ON)| VGS = 10 V, VDS = 75 V, ID = 104 A, RG = 6 Ω| |
49| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 38|
Turn−Off Delay Time| td(OFF)| | 64|
Fall Time| tf| | 10|
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | VGS = 0 V, IS = 104 A, TJ = 25°C | 0.88 | 1.2 | V | |
|---|---|---|---|---|---|---|
| VGS = 0 V, IS = 104 A, TJ = 125°C | 0.79 | |||||
| Reverse Recovery Time | tRR | VGS = 0 V, IS = 104 A, dIS/dt = 100 A/µs | 89 |
ns
Charge Time| ta| | 47|
Discharge Time| tb| | 42|
Reverse Recovery Charge| QRR| | 164| | nC
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under
different conditions.
3. Switching characteristics are independent of operating junction
temperature
TYPICAL CHARACTERISTICS
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK7 (TO−263 7 LD)
CASE 418AY
ISSUE C
DOCUMENT NUMBER: 98AON13798G
Electronic versions are uncontrolled except when accessed directly from the
Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in
red.
DESCRIPTION:
PAGE 1 OF 1D2PAK7 (TO−263 7 LD)
ON Semiconductor and are trademarks of Semiconductor Components Industries,
LLC dba ON Semiconductor or its subsidiaries in the United States and/or other
countries.
ON Semiconductor reserves the right to make changes without further notice to
any products herein. ON Semiconductor makes no warranty, representation or
guarantee regarding the suitability of its products for any particular
purpose, nor does ON Semiconductor assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any
and all liability, including without limitation special, consequential or
incidental damages. ON Semiconductor does not convey any license under its
patent rights nor the rights of others.
onsemi, , and other names, marks, and brands are registered and/or common law
trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its
affiliates and/or subsidiaries in the United States and/or other countries.
onsemi owns the rights to a number of patents, trademarks, copyrights, trade
secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent−Marking.pdf.
onsemi reserves the right to make changes at any time to any products or
information herein, without notice. The information herein is provided “as−is”
and onsemi makes no warranty, representation or guarantee regarding the
accuracy of the information, product features, availability, functionality, or
suitability of its products for any particular purpose, nor does onsemi assume
any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. Buyer is responsible for its
products and applications using onsemi products, including compliance with all
laws, regulations and safety requirements or standards, regardless of any
support or applications information provided by onsemi. “Typical” parameters
which may be provided in onsemi data sheets and/or specifications can and do
vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. onsemi does not convey any
license under any of its intellectual property rights nor the rights of
others. onsemi products are not designed, intended, or authorized for use as a
critical component in life support systems or any FDA Class 3 medical devices
or medical devices with a same or similar classification in a foreign
jurisdiction or any devices intended for implantation in the human body.
Should Buyer purchase or use onsemi products for any such unintended or
unauthorized application, Buyer shall indemnify and hold onsemi and its
officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim
alleges that onsemi was negligent regarding the design or manufacture of the
part. onsemi is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale
in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library:
www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
Downloaded from Arrow.com.