NXP BTS6403C Evaluation Board User Guide

July 23, 2024
NXP

NXP BTS6403C Evaluation Board User Guide

Introduction

This document describes the use, design, and test results of the BTS6403C.

BTS6403C product description
The BTS6403C is a wideband, high linearity, pre-driver amplifier for 5G massive MIMO infrastructure applications, with fast on-off switching to support TDD systems. The BTS6403C is designed to operate from 4.4 GHz to 5 GHz.
The BTS6403C is housed in a 3 mm x 3 mm x 0.85 mm 16-terminal HVQFN package.
The amplifier is ESD protected on all terminals.

BTS6403C key features and benefits

  • High saturated output power Po(sat) = 28 dBm
  • High power-gain Gp = 35.5 dB
  • High linearity performance ACLR = -42 dBc
  • Unconditionally stable
  • Fast switching to support TDD systems
  • 5 V single supply, quiescent current 100 mA
  • Small 16-terminal leadless package 3 mm x 3 mm x 0.85 mm
  • ESD protection on all terminals
  • Moisture sensitivity level 1

NXP Semiconductors

Figure 1. EVB

**Figure 2. functional diagram

Figure 3. pin diagram

Figure 4. Location of the components

Figure 5. EVB schematic

Figure 6. Bill of materials

**

DC and control connections

**Figure 7

shows the DC and enable connection, at the main header (J1). The connector can be straight or 90 degrees. The text is also on the EVB. Figure 8

shows connections JP1 GND, and JP1 ISET. JP1 (ISET) on the EVB can be applied to adjust the quiescent current in the final stage of the amplifier. R1 should be removed in case JP1 is applied to adjust the bias current.
Note: NXP recommends that, using the setup as is shown in Figure 8 is R1 (10 ΚΩ).
Note:** Connector may be straight or 90 degrees angled.

Operations

Figure 9

shows the connections in a single ended to single ended operation. If differential to single ended operation is also needed, NXP refers to UM11918 of the BTS6305U.

Measurements results

In the below graphics, the Spar measurements are shown. Measured at nominal conditions VCC = 5 V, Tcase = 25 °C, Rset = 10 KΩ.
Figure 10. Gain at nominal conditions
**Figure 11. RLi at nominal conditions

Figure 12. RLo at nominal conditions

Figure 13. ISLr (Gain mode) at nominal conditions

Figure 14. ISLr (off mode) at nominal conditions

Figure 15. NF at nominal conditions

**

Abbreviations

Acronym Description
ACLR adjacent channel leakage ratio
ESD electrostatic discharge
EVB evaluation board
MIMO massive multiple-input multiple-output
RF radio frequency
TDD time-division duplexing

EMC information

CAUTION
This product has not undergone formal EMC assessment. It is the responsibility of the user to ensure that any finished assembly complies with applicable regulations on EMC interference. EMC testing, and other testing requirements for CE is the responsibility of the user.

Revision history

Document ID Release date Description
UM11927 Rev. 1.1 15 April 2024
  • Updated Legal information and brought to current standard

UM11927 Rev. 1| 23 May 2023|

  • Initial release of user manual

Legal information

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