onsemi NTMFS4C022N MOSFET Power Single N-Channel User Guide
- June 17, 2024
- onsemi
Table of Contents
onsemi NTMFS4C022N MOSFET Power Single N-Channel
Product Information
Specifications:
- Drain-to-Source Voltage (VDSS): 30 V
- Gate-to-Source Voltage (VGS): 20 V
- Continuous Drain Current (ID): 136 A
- Steady PD: 64 W
- Pulsed Drain Current: 900 A
- Operating Junction and Storage Temperature Range: -53 to +150 °C
- Source Current (Body Diode): 53 A
- Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 11 A): 549 mJ
- Lead Temperature for Soldering Purposes (1/8 from case for 10 s): TL
Features:
- Compliant
Thermal Resistance Maximum Ratings:
- Junction-to-Case – Steady State (RqJC): Note 2
- Junction-to-Ambient – Steady State (RqJA): Note 2
Data Sheet:
For more information, please refer to the data sheet.
Ordering Information:
- Device NTMFS4C022NT1G
- Device NTMFS4C022NT3G
- Package: SO-8FL (Pb-Free)
- Shipping: 1500 / Tape & Reel, 5000 / Tape & Reel
Product Usage Instructions
Installation:
To install the product, follow these steps:
- Ensure that the power supply is disconnected.
- Identify the appropriate location for installation.
- Securely mount the product using suitable fasteners.
- Connect the necessary cables and wires according to the product’s specifications.
Operation:
To operate the product, follow these steps:
- Ensure that the power supply is connected and within the specified voltage range.
- Verify that all connections are secure and properly configured.
- Refer to the product’s user manual for specific instructions on configuring and controlling the product’s features.
- Monitor the product’s performance and make adjustments as needed.
Maintenance:
To maintain the product and ensure optimal performance, follow these guidelines:
- Regularly inspect the product for any signs of damage or wear.
- Clean the product as necessary using a soft, dry cloth.
- Avoid exposing the product to extreme temperatures or humidity.
- Keep the product away from liquids and corrosive substances.
Frequently Asked Questions (FAQ)
-
Q: What is the maximum drain-to-source voltage?
The maximum drain-to-source voltage is 30 V. -
Q: What is the maximum continuous drain current?
The maximum continuous drain current is 136 A. -
Q: Can the product be used in high-temperature environments?
Yes, the product has an operating temperature range of -53 to +150 °C. -
Q: How should I clean the product?
You can clean the product using a soft, dry cloth. Avoid using liquids or abrasive materials.
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|
30 V
| 1.7 mQ @ 10 V| ****
136 A
2.6 mQ @ 4.5 V
N−CHANNEL MOSFET
MARKING DIAGRAM
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 30 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Cur- rent R8JC (Notes 1, 3) | **** |
Steady State
| TC = 25°C| ID| 136| A
Power Dissipation R8JC (Notes 1, 3)| TC = 25°C| PD| 64| W
Continuous Drain Cur- rent R8JA (Notes 1, 2, 3)| ****
Steady State
| TA = 25°C| ID| 30| A
Power Dissipation R8JA (Notes 1, 2, 3)| TA = 25°C| PD| 3.1| W
Pulsed Drain Current| TA = 25°C, tp = 10 s| IDM| 900| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to
150
| °C
Source Current (Body Diode)| IS| 53| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 11 A)| EAS| 549| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 2) | R8JC | 1.95 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | R8JA | 40 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NTMFS4C022NT1G | SO−8FL |
(Pb−Free)
| 1500 /
Tape & Reel
NTMFS4C022NT3G| SO−8FL
(Pb−Free)
| 5000 /
Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 A| 30| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/ TJ| | |
18.2| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 24 V| TJ = 25 °C| |
| 1| ****
A
TJ = 125°C| | | 10
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250 A | 1.3 | 2.2 | V | |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | 4.8 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 30 A | 1.4 | 1.7 |
mQ
VGS = 4.5 V| ID = 30 A| | 2.0| 2.6
Forward Transconductance| gFS| VDS = 3 V, ID = 30 A| | 136| | S
Gate Resistance| RG| TA = 25 °C| | 1.0| | Q
CHARGES AND CAPACITANCES
Input Capacitance| CISS| ****
VGS = 0 V, f = 1 MHz, VDS = 15 V
| | 3071| | ****
pF
---|---|---|---|---|---|---
Output Capacitance| COSS| | 1673|
Reverse Transfer Capacitance| CRSS| | 67|
Total Gate Charge| QG(TOT)| ****
VGS = 4.5 V, VDS = 15 V; ID = 30 A
| | 20.8| | ****
nC
Threshold Gate Charge| QG(TH)| | 4.9|
Gate−to−Source Charge| QGS| | 8.5|
Gate−to−Drain Charge| QGD| | 4.7|
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 15 V, ID = 30 A| | 45.2| | nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)|
VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 Q
| | 14| |
ns
---|---|---|---|---|---|---
Rise Time| tr| | 32|
Turn−Off Delay Time| td(OFF)| | 27|
Fall Time| tf| | 17|
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage| VSD| VGS = 0 V, IS = 10 A| TJ = 25°C| | 0.75| 1.1|
V
---|---|---|---|---|---|---|---
TJ = 125°C| | 0.6|
Reverse Recovery Time| tRR| ****
VGS = 0 V, dIS/dt = 100 A/ s, IS = 30 A
| | 47| | ****
ns
Charge Time| ta| | 23|
Discharge Time| tb| | 24|
Reverse Recovery Charge| QRR| | 39| | nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: pulse width 300s, duty cycle 2%.
- Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
PACKAGE DIMENSIONS
For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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ADDITIONAL INFORMATION
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Technical Library :
www.onsemi.com/design/resources/technical−documentation
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For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales