onsemi NTBG022N120M3S Evaluation Board User Manual
- June 12, 2024
- onsemi
Table of Contents
onsemi NTBG022N120M3S Evaluation Board
Product Information
The Evaluation Board for 1200 V SiC MOSFET M3S in D2PAK-7LD is designed for evaluating Onsemi’s SiC MOSFETs. It features a full-bridge topology with four SiC MOSFETs soldered onto an IMS PCB. The gate driver stage consists of four NCD57084 high current galvanically isolated gate drivers, providing 3 kV insulation between the primary and secondary sides. The gate drive voltage is supplied through an isolated DC/DC voltage source using the NCV3064. The board is designed to be ROHS compliant and must be used in a lab environment by skilled personnel trained on safety standards.
Product Usage Instructions
- Connect an external controller to the evaluation board to provide PWM inputs and handle fault signals.
- It is recommended to use an external sensor for over-current and over-voltage protection.
- For the power supply connection, connect an external regulated voltage of 12 V / 1 A to connector JP1 for the primary side of the gate drivers.
- The secondary side of the gate driver is supplied through a flyback DC/DC source (12 V / +18 V, -3.5 V) realized with the NCV3064 controller.
- Connect PWM signals into the board using connector X1.
- Driver UVLO faults (active low) are connected to connector X1.
- Pins thermistors 1 and 2 provide signals from the NTCs soldered on the IMS PCB.
Make sure to follow all safety standards and guidelines when operating the evaluation board.
Evaluation Board Description
This evaluation board supports evaluation of onsemi’s NTBG022N120M3S 22 m 1200 V SiC MOSFET in D2PAK−7LD working together with NCD57084 isolated gate drivers using a printed circuit board using IMS. These products are used in energy infrastructure applications, such as PV inverters, UPS or EV chargers to improve efficiency and power density compared with IGBT or superjunction MOSFET solutions. This manual describes the board function, board layout and comparison of the IMS PCB thermal properties with the thermal properties of a standard FR4 board. It includes details of layout, schematics, and bill of materials.
The evaluation board contains four SiC MOSFETs soldered onto an IMS PCB in a full−bridge topology. The gate driver stage consists of four NCD57084 high current galvanically isolated gate drivers. The driver provides 3 kV insulation between primary and secondary side. The gate drive voltage is supplied through an isolated DC/DC voltage source using the NCV3064.
The evaluation board can be connected to an external controller providing PWM inputs and handling fault signals. Use of an external sensor for over current and over voltage protection is recommended.
Evaluation Board Operation
The board is designed as ROHS compliant. Design of the board was not qualified for manufacturing. No tests were made on whole operating temperature range. No lifetime tests were performed. The board must be used in lab environment only and must be operated by skilled personal trained on all safety standards. Further details of used components are in their respective datasheets.
Features
- Low Thermal Resistance IMS PCB
- 4 Isolated Gate Drivers with 3 kV Insulation
- On Board NTC for IMS Temperature Sensing
- Low Inductance PCB Layout
- Modular Pinout allows Evaluation of Multiple Topologies
APPLICATIONS INFORMATION
Evaluation Board Block Diagram
The evaluation board consists of 3 PCBs as shown in Figure 2. The main PCB
contains the gate driver stage, power terminals and PWM terminals. Each of the
other two PCBs contains a half−bridge circuit made of 2 D2PAK−7L transistors
and a decoupling capacitor soldered on an isolated metal printed circuit
board. Half−bridge boards are soldered to the main board.
Mechanical Dimensions
Main board outline dimensions are 138 mm x 150 mm. The board outline is shown
in Figure 3. Thickness of the main board is 1.5 mm.
Single IMS board dimensions are 62.8 x 49.5mm. The thickness of the IMS PCB is 1 mm.
PCB Stack
The driver board is a standard 4−layer FR4 PCB with 70m copper thickness. Half
bridge boards are IMS substrate
boards to achieve low RthJ−H. The IMS board stack is depicted in Figure 5. A
dielectric layer is 50m thick and allows 4kV AC to withstand voltage.
Electrical Rating
The board is rated to DC voltage input 800 VDC. The nominal voltage in the DC link is 600 V. Maximum voltage in the DC link is 900 V. There is no protection for exceeding the maximum DC link voltage or for reverse polarity. No inrush current limitation is present on the board.
Power Supply Connection
For the primary side of the gate drivers, the user must connect an external regulated voltage of 12 V / 1 A to connector JP1. The secondary side of gate driver is supplied through flyback DC/DC source 12 V / +18 V, −3.5 V realized with NCV3064 controller.
Connector Pinout
For connection of PWM signals into the board the connector X1 must be used. Driver UVLO faults (active low) are conencted to connector X1. Pins thermistor 1 and 2 provide singnals from the NTCs which are soldered on the IMS PCB. The connector X1 pinout is depicted in Figure 6.
Fault Outputs
The NCD57084 gate driver has two protection functions, READY function “RDY” and DESAT. The RDY fault is triggered by UVLO at the secondary side of the driver. RDY is active LOW. RDY fault is cleared with rising edge of input PWM signal is high and secondary UVLO condition is not present. At the first power up of the evaluation board the drivers will be in fault condition. Fault signal will be cleared with first PWM pulse. The second protection function of the gate driver desaturation protection “DESAT” is not used on this board.
NTC Temperature Sensing
The built−in NTC monitors the IMS PCB temperature of the half−bridge. The NTC is connected to terminal X1. Signal is set to correspond TTL active low at 100°C NTC temperature
Switching Losses and Double Pulse Test
The switching was tested on the board with a double pulse test. Tested was B leg, bottom MOSFET commuting with high side diode. Current was captured by Rogowski coil attached around the D2PAK legs.
The waveform shows no oscillation during switching. Voltage overshoot during
turn−off for ~50 A switching is 109 V.
From the measurements switching loss was calculated at both Tj = 25°C and Tj =
125°C, measured values align well with the MOSFET datasheet. User can
calculate application board power losses from Figure
9.
Board Usage
The following equipment is needed to use the board: 12 V / 1 A laboratory
source, HV power supply, PWM generator, DC link. Connect 12 V to terminal XJ1
power board. Plug power source to terminal P2. Connect the load inductor to
terminals PHA and PHB. Connect DC link to terminals DC+ and DC−. Connect the
PWM generator to the terminal XJ1. Turn on the 12 V power source. Turn on the
HV power source. Start PWM operation
Rth Test
A temperature test was performed on two different half−bridge PCBs. First
board was “standard” FR4 PCB with thermal vias underneath the D2PAK package.
Second board was IMS PCB which comes with the demo board. Details of each PCB
is given in Figure 11. PCB layout of FR4 board is in the Figure
12.
Material composition of each board is different resulting in different thermal resistance. From material parameters the thermal resistance junction to heatsink was calculated.
From Figure 13 it can be observed that the RthJ−H of the IMS board is superior to that of standard FR4 PCB. The main contributor to the high Rth value is the insulation pad between the heatsink and the PCB which is needed to electrically insulate the drains of the MOSFETs.
For the test transistor an observation hole was used to measure directly
junction temperature with an IR camera. The whole setup was painted black so
that the measured temperatures are as close to reality as possible. Air cooled
heatsink with low RthH−A was used. The half−bridge circuit on the PCB was
loaded with DC current, transistors were supplied with lower Vgs than nominal
in order to increase the device losses.
The thermocouple was buried inside the heatsink 1 mm under the die, so that heatsink temperature could be accurately observed. Whole system was observed with IR camera.
By the test it was observed that maximum power loss on the device to reach 150°C junction temperature is 57 W for IMS PCB and 23 W for FR4 PCB. The measured Rthj−h for FR4 was 6.5 W/K and 2.0 W/K for IMS PCB.
For IMS PCB correlation between transistor case temperature and junction
temperature was captured. So user can determine the actual Tj value based on
the temperature reading of the transistor mold compound.
Application Testing
The evaluation board was placed on a heatsink and connected to DC link and output LCL filter. PWM signals were generated from a MCU board. Test was performed in emulated application condition in a synchronous boost/buck configuration with 50 kHz switching frequency.
Power board delivered 10 A at 600 V VDC condition. Reaching case temperature
of mosfet 65 degress. 
SCHEMATICS, LAYOUT AND BILL OF MATERIAL
Layout of Driver Board
Layout of Power Board
Table 1. BILL OF MATERIAL 2X POWER BOARD
| # | Value/Name | Designator | Package | Manufacturer |
|---|---|---|---|---|
| 2 | 0.1uF/ 1kV | C1 | C1812X104KDRACTU | KEMET |
| 2 | PINHEADER 12×2 | JP1 | FTS−104−01−F−DV−P−TR | SAMTEC |
| 4 | PINHEADER 8X2 | JP2, JP3 | 8X2−2.54MM−SMD | SAMTEC |
| 2 | NTC/4k7 | THR1 | NTC −1206−B57621C5 | EPCOS |
| 4 | NTBG022N120M3S | TR1, TR2 | D2PAK−7L−CASE−48BJ | onsemi |
Table 2. BILL OF MATERIAL DRIVER BOARD
| # | Value/Name | Designator | Package | Manufacturer |
|---|---|---|---|---|
| 4 | 220p/50V | C1, C28, C44, C60 | X7R 0603K | Wurth Elektronik |
| 4 | 2n2/50V | C2, C29, C45, C61 | X7R 0603K | AVX |
| 28 | 10u/25V | C3, C5, C7, C9, C12, C13, C15, C21, C22, C23, C24, C25, C26, C27, | ||
| C37, C38, C39, C40, C41, C42, C43, C53, C54, C55, C56, C57, C58, C59 | X7S | |||
| 0805K | TDK | |||
| 24 | 0.1uF/25V | C6, C8, C10, C11, C14, C16, C31, C32, C33, C34, C35, C36, C47, | ||
| C48, C49, C50, C51, C52, C63, C64, C65, C66, C67, C68 | X7R 0603 | AVX | ||
| 4 | 100n/1000V | C17,18,19,20 | C1812X104KDRACTU | KEMET |
| 4 | 2.2uF/25V | C4, C30, C46, C62 | X6S 0603K | Murata Electronics |
| 2 | 10u/25V | CTH1, CTH2 | DO NOT POPULATE | |
| 4 | 1k3/1% | R1, R11, R18, R25 | 0603K | Panasonic |
| 4 | 7k5/1% | R3, R10, R17, R24 | 0603K | Panasonic |
| 4 | 0R22/1% | R2, R8, R15, R22 | 0603K | Panasonic |
| 4 | 22k/1% | R4A, R9B, R16B, R23B | 0603K | Panasonic |
| 4 | 3k3/1% | R4B, R9A, R16A, R23A | 0603K | Panasonic |
| 16 | 10k/1% | R5, R12, R19, R26, RG−S, RG−S2, RG−S2B, RG−SB, RLED, RLED_2, | ||
| RLED_2B, RLED_B, RIN1B, RIN2B, RIN3B, RINB, RLED_VDD | 0603K | Panasonic | ||
| 8 | 5k1/1% | R6, R7, R13, R14, R20, R21, R27, R28 | 0603K | Panasonic |
| 4 | 100R/1% | RIN, RIN1, RIN2, RIN3, | 0603K | Panasonic |
| 8 | 6R8/1% | RG−OFF_1A,1B,2A,2B, RG−ON 1A,1B,2A,2B | 0805/125mW | MULTICOMP PRO |
| 2 | 1K6/1% | RTH1, RTH2 | 0603K | Panasonic |
| 4 | LED RED | FLT_1A, FLT_1B, FLT_2A, FLT_2B | LED SMD 0805 20mA, 1.9V |
KINGBRIGHT
1| LED GREEN| LED_VDD| LED SMD 0805 GREEN| KINGBRIGHT
4| 475uH SMD
transformer
| TR1, TR2, TR3, TR4| flyback converter; Uin = 15V, Uout1=20V, Uout2=−5V,
Uout3 = 5V, Uout4_aux = 5V| Wurth Elektronik
4| DIODE 18V/500mW| D1, D8, D14, D20| Zener diode− MMSZ18T1G| onsemi
1| DIODE 15V/500mW| D25| Zener diode− MMSZ15T1G| onsemi
20| DIODE 60V/2A| D2, D3, D4, D5, D6, D7, D9, D10, D11, D12, D13, D15, D16,
D17, D18, D19, D21, D22, D23, D24| Schottky diode − SS26FL| onsemi
4| DIODE 30V/2A| D−HO_1A, D−HO_1B, D−HO_2A, D−HO_2B| Schottky Barrier
Rectifiers NRVBSS23FA| onsemi
Table 2. BILL OF MATERIAL DRIVER BOARD (continued)
| # | Value/Name | Designator | Package | Manufacturer |
|---|---|---|---|---|
| 4 | NCD57084 | DR1, DR2, DR3, DR4 | Isolated Compact IGBT Gate Driver − |
SOIC−8
| onsemi
4| NCP3064BDR2G| IC1, IC2, IC3, IC4| Boost/Buck/Inverting Converter, Switching
Regulator− SOIC−8| onsemi
1| Connector 5.08mm/2pin| JP1| Terminal Block MSTBA 2,5/ 2-G-5,08| PHOENIX
CONTACT
1| MOLEX 2.54mm/2pin| FAN| MOLEX 22−05−7028−02, Right Angle| MOLEX
4| HEADER 2×8| JP1, JP2, JP3, JP7| FEMALE HEADER 16PIN(2×8) ZL5,5−2X08 SG| HSU
2| HEADER 2×12| JP6, JP10| FEMALE HEADER 24PIN(2×12)| HSU
1| PIN HEADER 2×14| CON−X1| WR−BHD Male Box Header 2x14pin 2,54mm −
61201421621| WURTH ELEKTRONIK
4| Screw terminal| CONN1, CONN2, CONN3, CONN4| Screw terminal 3,5mm − K14−00A|
DEGSON
32| Testerpad| TST…| SMD testpad S1751−46R| Harwin
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