onsemi NVLJWS5D0N03CL Power Single N Channel Owner’s Manual

onsemi NVLJWS5D0N03CL Power Single N Channel

Specifications

• Product Name: MOSFET – Power, Single N-Channel
• Operating Voltage: 30 V
• Power Dissipation : 4.2 mW
• Continuous Drain Current: 77 A
• Model Number: NVLJWS5D0N03CL

Product Features

• Drain-to-Source Voltage: 30 V
• Gate-to-Source Voltage: V
• Continuous Drain Current RqJC: 77 A
• Power Dissipation RqJC: 55 W
• Continuous Drain Current RqJA: 18 A
• Power Dissipation RqJA: 13 W
• Operating Junction and Storage Temperature Range Source Current (Body Diode): 37 A

Features

• Small Footprint for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• Wettable Flank Option for Enhanced Optical Inspection
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Steady State

| TC = 25°C| ID| 77| A
TC = 100°C| 55
Power Dissipation R8JC (Note 1)| TC = 25°C| PD| 45| W
TC = 100°C| 23
Continuous Drain Current R8JA (Notes 1, 2, 3)|

Steady State

| TA = 25°C| ID| 18| A
TA = 100°C| 13
Power Dissipation R8JA (Notes 1, 2)| TA = 25°C| PD| 2.5| W
TA = 100°C| 1.2
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 317| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to

+175

| °C
Source Current (Body Diode)| IS| 37| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 4.8 A)| EAS| 101| MJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C

THERMAL RESISTANCE MAXIMUM RATINGS

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

30 V

| 4.2 mQ @ 10 V|

77 A

6.6 mQ @ 4.5 V

ELECTRICAL CONNECTION

ORDERING INFORMATION
See detailed ordering, marking, and shipping information in the package dimensions section on page 5 of this data sheet.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter| Symbol| Test Condition| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

ON CHARACTERISTICS (Note 4)

mV/°C
Drain−to−Source On Resistance| RDS(on)| VGS = 10 V, ID = 10 A| | 3.5| 4.2| mQ
VGS = 4.5 V, ID = 10 A| | 5.1| 6.6
Forward Transconductance| NFS| VDS = 10 V, ID = 10 A| | 44| | S

CHARGES AND CAPACITANCES

Input Capacitance| Ciss| ****

VGS = 0 V, VDS = 15 V, f = 1.0 MHz

| | 1350| | pF
---|---|---|---|---|---|---
Output Capacitance| Coss| | 650|
Reverse Transfer Capacitance| Cross| | 20|
Total Gate Charge| QG(TOT)| VGS = 4.5 V, VDS = 15 V; ID = 10 A| | 9.0| | ****

C

Total Gate Charge| QG(TOT)| ****

VGS = 10 V, VDS = 15 V, ID = 10 A

| | 20|
Threshold Gate Charge| QG(TH)| | 1.8|
Gate−to−Source Charge| QGS| | 3.0|
Gate−to−Drain Charge| QGD| | 2.0|
Plateau Voltage| VGP| | 2.3| | V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time| td(on)|

VGS = 10 V, VDD = 15 V, ID = 10 A, RG = 6 Q

| | 9.0| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 4.0|
Turn−Off Delay Time| td(off)| | 30|
Fall Time| tf| | 6.0|

DRAIN−SOURCE DIODE CHARACTERISTICS

VGS = 0 V, dlS/dt = 100 A/µs, IS = 10 A

| | 35| | ns
Charge Time| ta| | 17|
Discharge Time| TB| | 18|
Reverse Recovery Charge| QRR| | 23| | C

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

• Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
• Switching characteristics are independent of operating junction temperatures.

NVLJWS5D0N03CL

TYPICAL CHARACTERISTICS

DEVICE ORDERING INFORMATION

(Pb−Free, Wettable Flanks)

| 3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

PACKAGE DIMENSIONS

WDFNW6 2.05×2.05, 0.65P

• CASE 515AD
• ISSUE O

onsemi, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. semi owns the rights to several patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and Onsemi makes no warranty, representation, or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does Onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations, and safety requirements or standards, regardless of any support or application information provided by onsemi. “Typical” parameters that may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s technical experts. semi does not convey any license under any of its intellectual property rights or the rights of others. semi-products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with the same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use Onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold Onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

• Email Requests to : orderlit@onsemi.com
• on semi Website: www.onsemi.com

TECHNICAL SUPPORT

North American Technical Support:

• Voice Mail: 1 800−282−9855
• Toll-Free USA/Canada Phone: 011 421 33 790 2910

Europe, Middle East, and Africa Technical Support:

Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

Frequently Asked Questions

• Q: What is the maximum power dissipation of the MOSFET?
  • A: The MOSFET has a maximum power dissipation of 55 W for RqJC and 13 W for RqJA.
• Q: Can the MOSFET handle high continuous drain currents?
  • A: Yes, the MOSFET is rated for a continuous drain current of up to 77 A.
• Q: How should I handle the MOSFET during soldering?
  • A: Maintain the lead temperature for soldering purposes at TL for 10 seconds as specified in the user manual.

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