onsemi FDS3672 Discrete Semiconductor Datasheet

: July 14, 2024
: onsemi

Table of Contents

onsemi FDS3672 Discrete Semiconductor
Features
FDS3672 **ELECTRICAL CHARACTERISTICS
FDS3672 TYPICAL CHARACTERISTICS
FDS3672 TEST CIRCUITS AND WAVEFORMS
Documents / Resources
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)

onsemi FDS3672 Discrete Semiconductor

MOSFET – N-Channel, POWERTRENCH 100 V, 7.5 A, 22 m FDS3672

Features

rDS(ON) = 19 m (Typ.), VGS = 10 V, ID = 7.5 A
Qg(tot) = 28 nC (Typ.), VGS = 10 V
Low Miller Charge
Low QRR Body Diode
Optimized Efficiency at High Frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
Pb−Free and Halide Free

Applications

DC−DC Converters and Off−Line UPS
Distributed Power Architecture and VRMs
Primary Switch for 24 V and 48 V Systems
High Voltage Synchronous Rectifier

MARKING DIAGRAM

& Z = Assembly Plant Code
& 2 = Date Code (Year & Week)
& K = Lot Traceability Code
FDS3672 = Specific Device Code

MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)

Symbol	Parameter	Ratings	Unit
VDSS	Drain to Source Voltage	100	V
VGS	Gate to Source Voltage	±20	V
ID	Drain Current

Continuous (TA = 25°C, VGS = 10 V, RSJA = 50°C/W)

Continuous (TA = 100°C, VGS = 10 V,

RSJA = 50°C/W)

Pulsed

| ****

7.5

4.8

Figure 4

| A
EAS| Single Pulse Avalanche Energy (Note 1)| 416| mJ
PD| Power Dissipation| 2.5| W
Derate above 25°C| 20| mW/°C
TJ, TSTG| Operating and Storage Junction Temperature Range| −55 to +150| °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Starting TJ = 25°C, L = 13 mH, IAS = 8 A.

THERMAL CHARACTERISTICS

Symbol	Parameter	Value	Unit
RSJA	Thermal Resistance,

Junction to Ambient at 10 s (Note 3)

| 50| ° C/W
RSJA| Thermal Resistance,

Junction to Ambient at 1000 s (Note 3)

| 85| ° C/W
RSJC| Thermal Resistance, Junction to Case (Note 2)| 25| ° C/W

RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user’s board design.
RJA is measured with 1.0 in2 copper on FR−4 board.

ORDERING INFORMATION

Device	Package	Shipping
FDS3672	SOIC8

(Pb−Free)

| 2,500 /

Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

FDS3672 **ELECTRICAL CHARACTERISTICS

**

(TA = 25°C unless otherwise noted.)

Symbol| Parameter| Test Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

BVDSS	Drain to Source Breakdown Voltage	ID = 250 µA, VGS = 0 V	100	−	−	V
IDSS	Zero Gate Voltage Drain Current	VDS = 80 V, VGS = 0 V	−	−	1	µA
VDS = 80 V, VGS = 0 V, TC = 150°C	−	−	250
IGSS	Gate to Source Leakage Current	VGS = ±20 V	−	−	±100	nA

ON CHARACTERISTICS

VGS(TH)	Gate to Source Threshold Voltage	VGS = VDS, ID = 250 µA	2	−	4	V
rDS(ON)	Drain to Source On Resistance	ID = 7.5 A, VGS = 10 V ID = 6.8 A, VGS

= 6 V,

ID = 7.5 A, VGS = 10 V, TC = 150°C

| −

−

| 0.019

0.023

0.035

| 0.023

0.028

0.043

| Q

DYNAMIC CHARACTERISTICS

CISS	Input Capacitance	VDS = 25 V, VGS = 0 V, f = 1 MHz	−	2015	−
COSS	Output Capacitance	−	285	−	pF
CRSS	Reverse Transfer Capacitance	−	70	−	pF
Qg(TOT)	Total Gate Charge at 10 V	VGS = 0 V to 10 V, VDD = 50 V, ID = 7.5 A,
Ig = 1.0 A	−	28	37	nC
Qg(TH)	Threshold Gate Charge	VGS = 0 V to 2 V, VDD = 50 V, ID = 7.5 A, Ig =
1.0 A	−	4	6	nC
Qgs	Gate to Source Gate Charge	VDD = 50 V, ID = 7.5 A, Ig = 1.0 A	−	10	−

nC
Qgs2| Gate Charge Threshold to Plateau| −| 6.8| −| nC
Qgd| Gate to Drain “Miller” Charge| −| 6| −| nC

SWITCHING CHARACTERISTICS (VGS = 10 V)

tON	Turn−On Time	VDD = 50 V, ID = 4 A, VGS = 10 V, RGS = 10 Q	−	−	51
td(ON)	Turn−On Delay Time	−	14	−	ns
tr	Rise Time	−	20	−	ns
td(OFF)	Turn−Off Delay Time	−	37	−	ns
tf	Fall Time	−	27	−	ns
tOFF	Turn−Off Time	−	−	96	ns

DRAIN−SOURCE DIODE CHARACTERISTICS

VSD	Drain to Source Diode Voltage	ISD = 7.5 A	−	−	1.25	V
ISD = 4 A	−	−	1.0	V
trr	Reverse Recovery Time	ISD = 7.5 A, dISD/dt = 100 A/µs	−	−	55	ns
QRR	Reverse Recovered Charge	ISD = 7.5 A, dISD/dt = 100 A/µs	−	−	90	nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

FDS3672 TYPICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

FDS3672 TEST CIRCUITS AND WAVEFORMS

SOIC8 CASE 751EB ISSUE A

DOCUMENT NUMBER:| 98AON13735G| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| SOIC8|

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

onsemi , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:
Technical Library : www.onsemi.com/design/resources/technical−documentation
onsemi Website:www.onsemi.com

ONLINE SUPPORT:www.onsemi.com/support
For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales

Documents / Resources

| onsemi FDS3672 Discrete Semiconductor [pdf] Datasheet
FDS3672, FDS3672 MOSFET N-Channel Powertrench, MOSFET N-Channel Powertrench, N-Channel Powertrench, Powertrench, FDS3672 Discrete Semiconductor, FDS3672, Discrete Semiconductor, Semiconductor
---|---