onsemi FDS3672 Discrete Semiconductor Datasheet
- July 14, 2024
- onsemi
Table of Contents
onsemi FDS3672 Discrete Semiconductor
MOSFET – N-Channel, POWERTRENCH 100 V, 7.5 A, 22 m FDS3672
Features
- rDS(ON) = 19 m (Typ.), VGS = 10 V, ID = 7.5 A
- Qg(tot) = 28 nC (Typ.), VGS = 10 V
- Low Miller Charge
- Low QRR Body Diode
- Optimized Efficiency at High Frequencies
- UIS Capability (Single Pulse and Repetitive Pulse)
- Pb−Free and Halide Free
Applications
- DC−DC Converters and Off−Line UPS
- Distributed Power Architecture and VRMs
- Primary Switch for 24 V and 48 V Systems
- High Voltage Synchronous Rectifier
MARKING DIAGRAM
- & Z = Assembly Plant Code
- & 2 = Date Code (Year & Week)
- & K = Lot Traceability Code
- FDS3672 = Specific Device Code
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
| Symbol | Parameter | Ratings | Unit |
|---|---|---|---|
| VDSS | Drain to Source Voltage | 100 | V |
| VGS | Gate to Source Voltage | ±20 | V |
| ID | Drain Current |
Continuous (TA = 25°C, VGS = 10 V, RSJA = 50°C/W)
Continuous (TA = 100°C, VGS = 10 V,
RSJA = 50°C/W)
Pulsed
| ****
7.5
4.8
Figure 4
| A
EAS| Single Pulse Avalanche Energy (Note 1)| 416| mJ
PD| Power Dissipation| 2.5| W
Derate above 25°C| 20| mW/°C
TJ, TSTG| Operating and Storage Junction Temperature Range| −55 to +150| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- Starting TJ = 25°C, L = 13 mH, IAS = 8 A.
THERMAL CHARACTERISTICS
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| RSJA | Thermal Resistance, |
Junction to Ambient at 10 s (Note 3)
| 50| ° C/W
RSJA| Thermal Resistance,
Junction to Ambient at 1000 s (Note 3)
| 85| ° C/W
RSJC| Thermal Resistance, Junction to Case (Note 2)| 25| ° C/W
- RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user’s board design.
- RJA is measured with 1.0 in2 copper on FR−4 board.
ORDERING INFORMATION
| Device | Package | Shipping |
|---|---|---|
| FDS3672 | SOIC8 |
(Pb−Free)
| 2,500 /
Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
FDS3672 **ELECTRICAL CHARACTERISTICS
**
(TA = 25°C unless otherwise noted.)
Symbol| Parameter| Test Conditions| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
| BVDSS | Drain to Source Breakdown Voltage | ID = 250 µA, VGS = 0 V | 100 | − | − | V |
|---|---|---|---|---|---|---|
| IDSS | Zero Gate Voltage Drain Current | VDS = 80 V, VGS = 0 V | − | − | 1 | µA |
| VDS = 80 V, VGS = 0 V, TC = 150°C | − | − | 250 | |||
| IGSS | Gate to Source Leakage Current | VGS = ±20 V | − | − | ±100 | nA |
ON CHARACTERISTICS
| VGS(TH) | Gate to Source Threshold Voltage | VGS = VDS, ID = 250 µA | 2 | − | 4 | V |
|---|---|---|---|---|---|---|
| rDS(ON) | Drain to Source On Resistance | ID = 7.5 A, VGS = 10 V ID = 6.8 A, VGS |
= 6 V,
ID = 7.5 A, VGS = 10 V, TC = 150°C
| −
−
−
| 0.019
0.023
0.035
| 0.023
0.028
0.043
| Q
DYNAMIC CHARACTERISTICS
| CISS | Input Capacitance | VDS = 25 V, VGS = 0 V, f = 1 MHz | − | 2015 | − | pF |
|---|---|---|---|---|---|---|
| COSS | Output Capacitance | − | 285 | − | pF | |
| CRSS | Reverse Transfer Capacitance | − | 70 | − | pF | |
| Qg(TOT) | Total Gate Charge at 10 V | VGS = 0 V to 10 V, VDD = 50 V, ID = 7.5 A, | ||||
| Ig = 1.0 A | − | 28 | 37 | nC | ||
| Qg(TH) | Threshold Gate Charge | VGS = 0 V to 2 V, VDD = 50 V, ID = 7.5 A, Ig = | ||||
| 1.0 A | − | 4 | 6 | nC | ||
| Qgs | Gate to Source Gate Charge | VDD = 50 V, ID = 7.5 A, Ig = 1.0 A | − | 10 | − |
nC
Qgs2| Gate Charge Threshold to Plateau| −| 6.8| −| nC
Qgd| Gate to Drain “Miller” Charge| −| 6| −| nC
SWITCHING CHARACTERISTICS (VGS = 10 V)
| tON | Turn−On Time | VDD = 50 V, ID = 4 A, VGS = 10 V, RGS = 10 Q | − | − | 51 | ns |
|---|---|---|---|---|---|---|
| td(ON) | Turn−On Delay Time | − | 14 | − | ns | |
| tr | Rise Time | − | 20 | − | ns | |
| td(OFF) | Turn−Off Delay Time | − | 37 | − | ns | |
| tf | Fall Time | − | 27 | − | ns | |
| tOFF | Turn−Off Time | − | − | 96 | ns |
DRAIN−SOURCE DIODE CHARACTERISTICS
| VSD | Drain to Source Diode Voltage | ISD = 7.5 A | − | − | 1.25 | V |
|---|---|---|---|---|---|---|
| ISD = 4 A | − | − | 1.0 | V | ||
| trr | Reverse Recovery Time | ISD = 7.5 A, dISD/dt = 100 A/µs | − | − | 55 | ns |
| QRR | Reverse Recovered Charge | ISD = 7.5 A, dISD/dt = 100 A/µs | − | − | 90 | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
FDS3672 TYPICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
FDS3672 TEST CIRCUITS AND WAVEFORMS
SOIC8 CASE 751EB ISSUE A
DOCUMENT NUMBER:| 98AON13735G| Electronic versions are uncontrolled
except when accessed directly from the Document Repository. Printed versions
are uncontrolled except when stamped “CONTROLLED COPY” in red.
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DESCRIPTION:| SOIC8|
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Documents / Resources
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onsemi FDS3672 Discrete
Semiconductor
[pdf] Datasheet
FDS3672, FDS3672 MOSFET N-Channel Powertrench, MOSFET N-Channel Powertrench,
N-Channel Powertrench, Powertrench, FDS3672 Discrete Semiconductor, FDS3672,
Discrete Semiconductor, Semiconductor
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