onsemi NTMFS5C460NL MOSFET Power Single N Channel Instructions

NTMFS5C460NL MOSFET Power Single N Channel

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Specifications:

• Drain-to-Source Voltage (VDSS): 40 V
• Gate-to-Source Voltage (VGS): 4.5 mW
• Continuous Drain Current (ID): 78 A

Product Information:

The NTMFS5C460NL is an N-channel MOSFET with the following key
features and specifications:

• Power Dissipation: 50 W
• Operating Junction and Storage Temperature: 25°C to 107°C
• Thermal Resistance: Junction-to-Case – 42 RqJC,
  Junction-to-Ambient – 1.8 RqJA

Product Usage Instructions:

1. Mounting the MOSFET:

Ensure proper mounting on an FR4 board using a 650 mm2, 2 oz. Cu
pad.

2. Power Supply Requirements:

The MOSFET operates at a voltage range of 40V and requires a
gate-to-source voltage of 4.5mW.

3. Current Limitations:

The maximum continuous drain current supported by the MOSFET is
78A.

4. Thermal Considerations:

Operate the MOSFET within the specified temperature range of
25°C to 107°C to prevent damage.

FAQ:

Q: What is the maximum power dissipation of the

NTMFS5C460NL?

A: The maximum power dissipation of the NTMFS5C460NL is 50W in a
continuous drain current state.

Q: What is the operating temperature range for the

NTMFS5C460NL?

A: The operating junction and storage temperature range for the
NTMFS5C460NL is from 25°C to 107°C.

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MOSFET ­ Power, Single, N-Channel
40 V, 4.5 mW, 78 A
NTMFS5C460NL

Features
· Small Footprint (5×6 mm) for Compact Design
· Low RDS(on) to Minimize Conduction Losses · Low QG and Capacitance to Minimize Driver Losses · These Devices are Pb-Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Drain-to-Source Voltage Gate-to-Source Voltage

VDSS

40

V

VGS

±20

V

Continuous Drain Current RqJC (Notes 1, 3)

Steady TC = 25°C

ID

State

TC = 100°C

78

A

55

Power Dissipation RqJC (Note 1)
Continuous Drain Current RqJA (Notes 1, 2, 3)

TC = 25°C

PD

TC = 100°C

Steady TA = 25°C

ID

State

TA = 100°C

50

W

25

21

A

15

Power Dissipation RqJA (Notes 1 & 2)

TA = 25°C

PD

TA = 100°C

3.6

W

1.8

Pulsed Drain Current TA = 25°C, tp = 10 ms

IDM

520

A

Operating Junction and Storage Temperature

TJ, Tstg – 55 to °C +175

Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy (IL(pk) = 5 A)
Lead Temperature for Soldering Purposes (1/8 from case for 10 s)

IS

56

A

EAS

107 mJ

TL

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol Value Unit

Junction-to-Case – Steady State

RqJC

3.0 °C/W

Junction-to-Ambient – Steady State (Note 2)

RqJA

42

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface-mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.

DATA SHEET www.onsemi.com

V(BR)DSS 40 V

RDS(ON) MAX 4.5 mW @ 10 V 7.2 mW @ 4.5 V

ID MAX 78 A

D (5)

G (4) S (1,2,3)
N-CHANNEL MOSFET

1
DFN5 (SO-8FL) CASE 488AA STYLE 1

MARKING DIAGRAM

D

S

D

S 5C460L

S AYWZZ

G

D

D

5C460L = Specific Device Code

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2016

1

September, 2023 – Rev. 5

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Publication Order Number: NTMFS5C460NL/D

NTMFS5C460NL

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ Max Unit

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage Temperature Coefficient

V(BR)DSS V(BR)DSS/
TJ

VGS = 0 V, ID = 250 mA

40

–

–

21

–

V

–

mV/°C

Zero Gate Voltage Drain Current Gate-to-Source Leakage Current

IDSS IGSS

VGS = 0 V, VDS = 40 V

TJ = 25 °C

–

TJ = 125°C

–

VDS = 0 V, VGS = 20 V

–

–

10

mA

–

250

–

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage Threshold Temperature Coefficient Drain-to-Source On Resistance
Forward Transconductance

VGS(TH) VGS(TH)/TJ
RDS(on)
gFS

VGS = VDS, ID = 40 mA

VGS = 10 V

ID = 35 A

VGS = 4.5 V

ID = 35 A

VDS = 15 V, ID = 35 A

1.2

–

2.0

V

–

-5.1

–

mV/°C

–

3.7

4.5

mW

–

5.8

7.2

–

72

–

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to- Drain Charge Plateau Voltage

CISS

VGS = 0 V, f = 1 MHz, VDS = 20 V

–

1300

–

pF

COSS

–

530

–

CRSS

–

22

–

QG(TOT)

VGS = 10 V, VDS = 20 V; ID = 35 A

–

23

–

nC

QG(TOT)

VGS = 4.5 V, VDS = 20 V; ID = 35 A

–

11

–

nC

QG(TH)

–

2.5

–

QGS

–

4.7

–

QGD

–

3.0

–

VGP

–

3.3

–

V

SWITCHING CHARACTERISTICS (Note 5)

Turn-On Delay Time

td(ON)

Rise Time Turn-Off Delay Time

tr td(OFF)

Fall Time

tf

DRAIN-SOURCE DIODE CHARACTERISTICS

VGS = 4.5 V, VDS = 20 V, ID = 35 A, RG = 1.0 W

–

9.2

–

ns

–

3.4

–

–

17

–

–

4.4

–

Forward Diode Voltage
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge

VSD
tRR ta tb QRR

VGS = 0 V, IS = 35 A

TJ = 25°C

–

0.86 1.2

V

TJ = 125°C

–

0.75

–

VGS = 0 V, dIs/dt = 100 A/ms, IS = 35 A

–

29

–

ns

–

14

–

–

14

–

–

12

–

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures.

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ID, DRAIN CURRENT (A)

RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW)

NTMFS5C460NL

TYPICAL CHARACTERISTICS

100

100

4.0 V

90

90

VDS = 10 V

80

VGS = 4.5 V to 10 V

3.6 V

80

70

70

ID, DRAIN CURRENT (A)

60

60

50

50

3.2 V

40

40

30

30

TJ = 25°C

20

2.8 V

20

10 0

10 0

TJ = 125°C

TJ = -55°C

0

0.4 0.8 1.2 1.6 2.0 2.4 2.8

0

1

2

3

4

5

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

VGS, GATE-TO-SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

RDS(on), DRAIN-TO-SOURCE RESISTANCE (mW)

20

8

18

TJ = 25°C ID = 35 A

TJ = 25°C 7

16

14

6

VGS = 4.5 V

12 5
10

8

6

4

2

23

4

5

6

7

8

9 10

VGS, GATE-TO-SOURCE VOLTAGE (V)

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

4

VGS = 10 V

3

2 0 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (A) Figure 4. On-Resistance vs. Drain Current and
Gate Voltage

1.9
1.8 VGS = 10 V 1.7 ID = 35 A 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-Resistance Variation with
Temperature

IDSS, LEAKAGE (nA)

100000 10000 1000 100

TJ = 175°C TJ = 125°C TJ = 85°C

10

175

5

10

15 20

25 30

35 40

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

RDS(on), NORMALIZED DRAIN-TO- SOURCE RESISTANCE

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C, CAPACITANCE (pF)

t, TIME (ns)

NTMFS5C460NL
TYPICAL CHARACTERISTICS

10000

1000

CISS COSS

100

CRSS

10 VGS = 0 V

TJ = 25°C

f = 1 MHz 1

0

5

10 15 20 25 30 35 40

VDS, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 7. Capacitance Variation

VGS, GATE-TO-SOURCE VOLTAGE (V)

10

9

QT

8

7

6

5 4 QGS

QGD

3

2

VDS = 20 V

TJ = 25°C

1

ID = 35 A

0

0

5

10

15

20

25

QG, TOTAL GATE CHARGE (nC) Figure 8. Gate-to-Source vs. Total Charge

1000

100 VGS = 0 V

IS, SOURCE CURRENT (A)

tr

100

tf

td(off)

td(on)

10

VGS = 4.5 V VDS = 20 V ID = 35 A

1

1

10

100

RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation vs. Gate Resistance

1000

10

1

0.1 TJ = 125°C

0.01

TJ = 25°C

0.001

0.2

0.4

TJ = -55°C

0.6

0.8

1.0

1.2

VSD, SOURCE-TO-DRAIN VOLTAGE (V)

Figure 10. Diode Forward Voltage vs. Current

100

100

10

TC = 25°C 1 VGS 10 V
Single Pulse

0.1
0.01 0.1

RDS(on) Limit Thermal Limit
Package Limit

1

10

500 ms 1 ms 10 ms
100

VDS (V) Figure 11. Safe Operating Area

IPEAK, (A)

10 TJ (initial)= 25°C
TJ (initial)= 100°C 1

0.1 1E-4

1E-3

10E-2

TIME IN AVALANCHE (s)

Figure 12. IPEAK vs. Time in Avalanche

ID, DRAIN CURRENT (A)

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RqJA(t), TRANSIENT THERMAL IMPEDANCE (°C/W)

100
50% Duty Cycle 10 20%
10% 5% 1 2% 1%

NTMFS5C460NL
TYPICAL CHARACTERISTICS

0.1
Single Pulse 0.01
0.000001 0.00001

0.0001

0.001

0.01

0.1

1

t, RECTANGULAR PULSE DURATION (s) Figure 13. Thermal Response

10

50% Duty Cycle
1 20%
10% 5% 2% 0.1 1%

Single Pulse

0.01

0.000001

0.00001

0.0001

0.001

0.01

t, RECTANGULAR PULSE DURATION (s) Figure 14. Thermal Response

TA = 25°C

10

100

1000

TC = 25°C

0.1

1

RqJC(t), TRANSIENT THERMAL IMPEDANCE (°C/W)

DEVICE ORDERING INFORMATION Device

Marking

Package

Shipping

NTMFS5C460NLT1G

5C460L

DFN5 (Pb-Free)

1500 / Tape & Reel

NTMFS5C460NLT3G

5C460L

DFN5 (Pb-Free)

5000 / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS

1
SCALE 2:1

DFN5 5×6, 1.27P (SO-8FL)
CASE 488AA ISSUE N

DATE 25 JUN 2018

D
2 D1

2 X
0.20 C
A B 2X 0.20 C

E1
2E c

4 X
q
A1

1 2 34
TOP VIEW
0.10 C A

DETAIL A

C
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

MILLIMETERS

DIM MIN NOM MAX

A 0.90 1.00 1.10 A1 0.00 — 0.05

b 0.33 0.41 0.51

c 0.23 0.28 0.33

D 5.00 5.15 5.30

D1 4.70 4.90 5.10

D2 3.80 4.00 4.20

E 6.00 6.15 6.30

E1 5.70 5.90 6.10

E2 3.45 3.65 3.85

e

1.27 BSC

G 0.51 0.575 0.71

K 1.20 1.35 1.50

L 0.51 0.575 0.71

L1

0.125 REF

M 3.00 3.40 3.80

q

0 — 12

0.10 C

SIDE VIEW

DETAIL A

8X b

0.10 C A B

e/2

0.05 c L

e

GENERIC MARKING DIAGRAM*
1 XXXXXX AYWZZ

1

4

XXXXXX = Specific Device Code

K

E2
PIN 5 (EXPOSED PAD)

RECOMMENDED SOLDERING FOOTPRINT*

L1

M

2X
0.495

4.560

2X
1.530

G

D2

BOTTOM VIEW

2X
0.475

A

= Assembly Location

Y

= Year

W

= Work Week

ZZ

= Lot Traceability

*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, “G” or microdot ” G”, may or may not be present. Some products may not follow the Generic Marking.

3.200

4.530

STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN

STYLE 2:

2X

PIN 1. ANODE 2. ANODE 3. ANODE

0.905

1

4. NO CONNECT 5. CATHODE

0.965

1.330

4X
1.000
4X 0.750

1.270 PITCH
DIMENSIONS: MILLIMETERS

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER: 98AON14036D

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DESCRIPTION: DFN5 5×6, 1.27P (SO-8FL)

PAGE 1 OF 1

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© Semiconductor Components Industries, LLC, 2018
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