onsemi FDBL86066-F085 MOSFET POWERTRENCH N-Channel Instructions

FDBL86066-F085 MOSFET POWERTRENCH N-Channel

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Specifications

• Model: FDBL86066-F085
• Drain-to-Source Voltage (VDSS): 100V
• Maximum Drain Current (ID): 240A
• Power Dissipation: 4.1mW

Product Information

Features:

This product is compliant and suitable for various
applications.

Thermal Characteristics:

Thermal Resistance, Junction to Case: 0.5 RqJC

Thermal Resistance, Junction to Ambient: 43 RqJA

Product Usage Instructions

Off Characteristics:

Drain-to-Source Breakdown Voltage (BVDSS): 100V

Drain-to-Source Leakage Current (IDSS): mA

Gate-to-Source Leakage Current (IGSS): Not specified

On Characteristics:

Gate to Source Threshold Voltage (VGS(th)): 2 – 4V

Static Drain to Source On Resistance (RDS(on)): 2.9 – 4.1mW

Dynamic Characteristics:

Input Capacitance: 3240 pF

Output Capacitance: 1950 pF

Switching Characteristics:

Turn-On Time: Not specified

Rise Time: Not specified

Diode Characteristics:

Source to Drain Diode Forward Voltage (VSD): 0.9 – 1.25V

Reverse Recovery Time (trr): 36 – 54ns

FAQ

Q: What is the maximum operating temperature of the

product?

A: The operating and storage temperature range is -55 to
+175°C.

Q: What is the typical power dissipation at different

temperatures?

A: Refer to Figure 1 for normalized power dissipation vs. case
temperature.

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MOSFET ­ POWERTRENCH) N-Channel
100 V, 240 A, 4.1 mW
FDBL86066-F085

Features
· Typical RDS(on) = 3.3 mW at VGS = 10 V, ID = 80 A · Typical Qg(tot) = 47 nC at VGS = 10 V, ID = 80 A · UIS Capability · Qualified to AEC Q101 · These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
· Automotive Engine Control · PowerTrain Management · Solenoid and Motor Drivers · Electrical Power Steering · Integrated Starter/Alternator · Distributed Power Architectures and VRM · Primary Switch for 12 V Systems

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDSS VGS ID
EAS

Drain-to-Source Voltage
Gate-to-Source Voltage Drain Current – Continuous, (VGS = 10 V) TC = 25°C (Note 1)
Pulsed Drain Current, TC = 25°C
Single Pulse Avalanche Energy (Note 2)

100

V

±20

V

185

A

(See Figure 4) A

93.6

mJ

PD TJ, TSTG

Power Dissipation
Derate Above 25°C
Operating and Storage Temperature

300 2
-55 to +175

W W/°C
°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Current is limited by silicon. 2. Starting TJ = 25°C, L = 30 mH, IAS = -79 A, VDD = 100 V during inductor
charging and VDD = 0 V during time in avalanche.

DATA SHEET www.onsemi.com

VDSS 100 V

RDS(ON) MAX 4.1 mW @ 10 V

ID MAX 240 A

D

G
S N-CHANNEL MOSFET

H-PSOF8L CASE 100CU
MARKING DIAGRAM
&Z&3&K FDBL 86066

&Z &3 &K FDBL86066

= Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code

ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.

© Semiconductor Components Industries, LLC, 2017

1

January, 2024 – Rev. 3

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Publication Order Number: FDBL86066-F085/D

FDBL86066-F085

THERMAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

RqJC

Thermal Resistance, Junction to Case

0.5

°C/W

RqJA

Thermal Resistance, Junction to Ambient (Note 3)

43

3. RqJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder mounting surface of the drain pins. RqJC is guaranteed by design, while RqJA is determined by the board design. The maximum rating presented here is based on mounting on a 1 in2 pad of 2oz copper.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Test Condition

Min Typ Max Unit

OFF CHARACTERISTICS

BVDSS IDSS

Drain-to-Source Breakdown Voltage Drain-to-Source Leakage Current

IGSS

Gate-to-Source Leakage Current

ON CHARACTERISTICS

ID = 250 mA, VGS = 0 V VDS = 100 V, VGS = 0 V
TJ = 25°C TJ = 175°C (Note 4) VGS = ±20 V

100

–

–

V

mA

–

–

1

–

–

1

–

–

±100 nA

VGS(th) RDS(on)

Gate to Source Threshold Voltage Static Drain to Source On Resistance

VGS = VDS, ID = 250 mA VGS = 10 V, ID = 80 A
TJ = 25°C TJ = 175°C (Note 4)

2

2.9

4.0

V

mW

–

3.3

4.1

–

7.3

8.8

DYNAMIC CHARACTERISTICS

Ciss Coss Crss Rg Qg(tot) Qg(th) Qgs Qgd

Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Threshold Gate Charge Gate to Source Charge Gate to Drain “Miller” Charge

VDS = 50 V, VGS = 0 V, f = 1 MHz
VGS = 0.5 V, f = 1 MHz VGS = 0 V to 10 V, VDD = 50 V, ID = 80 A VGS = 0 V to 2 V, VDD = 50 V, ID = 80 A VDD = 50 V, ID = 80 A VDD = 50 V, ID = 80 A

–

3240

–

pF

–

1950

–

pF

–

26

–

pF

–

0.5

–

W

–

47

69

nC

–

6

–

nC

–

15

–

nC

–

10

–

nC

SWITCHING CHARACTERISTICS

ton td(on)
tr td(off)
tf toff

Turn-On Time Turn-On Delay Rise Time Turn-Off Delay Fall Time Turn-Off Time

VDD = 50 V, ID = 80 A, VGS = 10 V, RGEN = 6 W

–

–

35

ns

–

18

–

ns

–

9

–

ns

–

36

–

ns

–

13

–

ns

–

–

68

ns

DRAIN-SOURCE DIODE CHARACTERISTICS

VSD

Source to Drain Diode Forward

Voltage

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

ISD = 80 A, VGS = 0 V ISD = 40 A, VGS = 0 V IF = 80 A, dISD/dt = 300 A/ms
IF = 80 A, dISD/dt = 1000 A/ms

–

0.9 1.25

V

–

0.85 1.2

–

36

54

ns

–

84

126

nC

–

32

48

ns

–

243

365

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. The maximum value is specified by design at TJ = 175°C. Product is not tested to this condition in production.

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POWER DISSIPATION MULTIPLIER

FDBL86066-F085
TYPICAL CHARACTERISTICS

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0

25 50 75 100 125 150 175 TC, CASE TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs. Case Temperature

200

CURRENT LIMITED BY SILICON

VGS = 10 V

160

ID, DRAIN CURRENT (A)

120

80

40

0

25

50

75 100 125 150 175

TC, CASE TEMPERATURE(oC)

Figure 2. Maximum Continuous Drain Current vs. Case Temperature

NORMALIZED THERMAL IMPEDANCE, ZqJC

2 DUTY CYCLE – DESCENDING ORDER
1

D = 0.50

0.20

0.10

0.05

0.02

0.1

0.01

SINGLE PULSE

PDM
t1 t2
NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x Z qJC x RqJC + TC

0.01 10-5

10-4

10-3

10-2

10-1

t, RECTANGULAR PULSE DURATION(s)

100

101

Figure 3. Normalized Maximum Transient Thermal Impedance

1000

VGS = 10 V

IDM, PEAK CURRENT (A)

100

SINGLE PULSE

10

10-5

10-4

TC = 25 oC FOR TEMPERATURES ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:

I = I 25

175 – T C 150

10-3

10-2

10-1

100

101

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

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ID, DRAIN CURRENT (A)

ID, DRAIN CURRENT (A)

FDBL86066-F085
TYPICAL CHARACTERISTICS

1000

100

10
OPERATION IN THIS AREA MAY BE LIMITED BY r DS(on)

100us

1
0.1 1

SINGLE PULSE TJ = MAX RATED TC = 25oC
10

1ms

10ms 100ms

100

300

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5. Forward Bias Safe Operating Area

IAS, AVALANCHE CURRENT (A)

1000 100

If R = 0 tAV = (L)(I AS )/(1.3RATED BV DSS – V DD ) If R00 tAV = (L/R)ln[(I AS R)/(1.3*RATED BV DSS – VDD ) +1] STARTING TJ = 25oC

10 STARTING TJ = 150oC

1 0.0001 0.001 0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)

1000

Figure 6. Unclamped Inductive Switching Capability

240 PULSE DURATION = 250 ms
200 DUTY CYCLE = 0.5% MAX
VDD = 10 V
160

120
TJ = 175oC 80

40

TJ = 25oC

TJ = -55oC

0

1

2

3

4

5

6

7

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 7. Transfer Characteristics

300 200 100

VGS
15V Top 10V 8V 7V 6V 5.5V 5V Bottom

250 ms PULSE WIDTH Tj=25oC

0

0

1

2

3

4

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 9. Saturation Characteristics

ID, DRAIN CURRENT (A)

IS, REVERSE DRAIN CURRENT (A)

300 100 VGS = 0 V

10

TJ = 175 oC

1

0.1

TJ = 25 oC

0.01

TJ = -55oC

0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 8. Forward Diode Characteristics

300 240 180

VGS
15V Top 10V 8V 7V 6V 5.5V 5V Bottom

120

60
0 0

250 m s PULSE WIDTH Tj=175oC

1

2

3

4

5

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 10. Saturation Characteristics

ID, DRAIN CURRENT (A)

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rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mW)

NORMALIZED GATE THRESHOLD VOLTAGE

FDBL86066-F085
TYPICAL CHARACTERISTICS

NORMALIZED DRAIN TO SOURCE ON-RESISTANCE

30

PULSE DURATION = 250 ms

DUTY CYCLE = 0.5% MAX

25

ID = 80 A

20

15

10

TJ = 175oC

5

TJ = 25oC 0

4

5

6

7

8

9

10

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 11. RDS(on) vs. Gate Voltage

1.2 VGS = VDS ID = 250 m A
1.0

0.8

0.6

0.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC)
Figure 13. Normalized Gate Threshold Voltage vs. Temperature

10000 1000

Ciss Coss

100

10

f = 1 MHz

VGS = 0 V

1

0.1

1

Crss

10

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 15. Capacitance vs. Drain to Source Voltage

NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

2.8 PULSE DURATION = 250 ms DUTY CYCLE = 0.5% MAX
2.4 ID = 80 A
2.0 VGS = 10 V
1.6
1.2
0.8
0.4 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC)
Figure 12. Normalized RDS(on) vs. Junction Temperature
1.10 ID = 1 mA
1.05

1.00

0.95

0.90 -80 -40 0 40 80 120 160 200 TJ, JUNCTION TEMPERATURE ( oC)
Figure 14. Normalized Drain to Source Breakdown Voltage vs. Junction Temperature

VGS, GATE TO SOURCE VOLTAGE(V)

10 ID = 80 A
8
6

VDD = 50 V VDD = 40 V

VDD = 60 V

4

2

0

0

10

20

30

40

50

Qg, GATE CHARGE(nC)

Figure 16. Gate Charge vs. Gate to Source Voltage

CAPACITANCE (pF)

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FDBL86066-F085

PACKAGE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

FDBL86066-F085

FDBL86066

H-PSOF8L (Pb-Free / Halogen Free)

2000 Units / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

POWERTRENCH is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries.

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
H-PSOF8L 11.68×9.80×2.30, 1.20P CASE 100CU ISSUE E

DATE 31 MAY 2024

GENERIC MARKING DIAGRAM*

A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code XXXX = Specific Device Code

AYWWZZ
XXXXXXXX XXXXXXXX

*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking.

DOCUMENT NUMBER: DESCRIPTION:

98AON13813G

Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

H-PSOF8L 11.68×9.80×2.30, 1.20P

PAGE 1 OF 1

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© Semiconductor Components Industries, LLC, 2016
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