TOSHIBA R22 Warm Water Bidet Electronic Devices and Storage Corporation Owner’s Manual

: September 14, 2024
: Toshiba

Table of Contents

R22 Warm Water Bidet Electronic Devices and Storage Corporation
Product Information
Specifications
Product Usage Instructions
Block Diagram Overview
Fan Motor Drive Circuit
LED Drive Circuit
Heater/Water Tap Control Circuit
Lid and Seat Open/Close Motor Drive Circuit
- FAQ
Q: What are the key components of the warm water bidet
Q: How does the bidet system ensure efficient power
Q: What criteria should be considered when selecting components

R22 Warm Water Bidet Electronic Devices and Storage Corporation

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Product Information

Specifications

Product Name: Warm Water Bidet
Manufacturer: Toshiba
Power Supply: AC 12V
Components: Motor, Pump, Fan, MCU, Sensor, LED, Heater, Valve,
Shower Nozzle, Remote Control Receiver, etc.

Product Usage Instructions

Block Diagram Overview

The warm water bidet system consists of various components
including an AC-DC Converter, DC-DC Converter, Motor, Pump, Fan,
Sensor, Water Tap, Heater, Valve, Shower Nozzle, Remote Control
Receiver, MCU, LED, and more.

Fan Motor Drive Circuit

The fan motor drive circuit controls the operation of the fan
motor. It includes an AC-DC converter and a DC-DC converter to
power the fan motor. The circuit also features MOSFETs for
efficient motor control.

LED Drive Circuit

The LED drive circuit powers the status LED. It utilizes an
AC-DC converter and a DC-DC converter along with MOSFETs for LED
control. The circuit ensures proper functioning of the LED
indicator.

Heater/Water Tap Control Circuit

This circuit is responsible for controlling the heater and water
tap. It utilizes a triac output photocoupler for efficient AC load
control. The MCU plays a crucial role in managing the operation of
the heater and water tap.

Lid and Seat Open/Close Motor Drive Circuit

The lid and seat open/close motor drive circuit controls the
movement of the lid and seat using a brushed DC motor. It features
MOSFETs and gate drivers to ensure proper operation of the motor.
Selecting suitable components is crucial for effective motor
control.

FAQ

Q: What are the key components of the warm water bidet

system?

A: The key components include the motor, pump, fan, sensor,
water tap, heater, valve, shower nozzle, remote control receiver,
MCU, LED, and various control circuits.

Q: How does the bidet system ensure efficient power

consumption?

A: The system utilizes MOSFETs with low on-resistance, small
package products, and operational amplifiers with phase
compensation circuit to reduce power consumption and optimize
performance.

Q: What criteria should be considered when selecting components

for the bidet system?

A: It is important to consider factors such as rated voltage and
current for motors, characteristics of gate drivers for MOSFETs,
and heat dissipation capabilities when selecting components for the
system.

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R22
Warm Water Bidet
Solution Proposal by Toshiba
© 2019-2024 Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation provides comprehensive device solutions to customers developing new products by applying its thorough understanding of the systems acquired through the analysis of basic product designs.
© 2019-2024 Toshiba Electronic Devices & Storage Corporation

Block Diagram
© 2019-2024 Toshiba Electronic Devices & Storage Corporation

Warm Water Bidet Overall block diagram

AC-DC Converter

DC-DC Converter

12 V: Motor, Pump, Fan Up to 5 V: MCU, Sensor, LED, etc.

Seating

Sensor Water Tap

Heater

Valve

Toilet Seat Warm Water

AC

12 V

Isolation

Shower

Nozzle

Pump Movement

Open/Close Sensor
Remote Control Receiver
Beep/ Indicator

MCU

MOSFET /MCD

Transistor Array
Lid and Seat Open/Close Motor

MOSFET /MCD

Deodorizing Fan

Flash

MOSFET /MCD

Drying Air Fan

4

Warm Water Bidet Details of fan motor drive / LED drive

Fan motor drive circuit
AC

AC-DC

11
11 MCU

Fan motor drive circuit

Current Detection

Op-a2 mp
2

DC-DC
12 V DC M
Fan Motor
MOSFET1
1

(with MCD)

MCU

MCD

M

11

9a

9b

11

9a 9b

LED drive circuit
AC

3
3
DC-DC

Status LED

MCU11
11

1
MOSFET
1

Click on the number in the circuit diagram to jump to the detailed description page

Criteria for device selection
– MOSFETs with low on-resistance contribute to low loss of the set.
– Small package products contribute to the reduction of circuit board area.
– Operational amplifiers are suitable for amplifying signals such as current sensing.

Proposals from Toshiba

– Realize a set with low power consumption by

Low on-resistance

1

Small signal MOSFET

1

– Operational amplifier with built-in phase

compensation circuit

2

General purpose operational amplifier

2

– Small surface mount package suitable for

high density mounting

3

Rectifier diode

3

– Motor controller with MOSFET that can

easily drive brushless DC motor Brushless DC motor driver IC

9a

9b

9a 9b

– Built-in analog input interface for sensing,

low power consumption, efficient software 11

development MCU M3H Group

11

5

Warm Water Bidet Details of heater/water tap control unit

Heater/Water tap control circuit
Heater/Water tap

Criteria for device selection
– A triac output photocoupler is suitable for controlling of AC load.

4
4

11
11

Triac output photocoupler

MCU

Proposals from Toshiba
– Efficient control of AC load
Triac output photocoupler – Built-in analog input interface for
sensing, low power consumption, efficient software development MCU M3H Group

4
4
11
11

Click on the number in the circuit diagram to jump to the detailed description page

6

Warm Water Bidet Details of lid and seat open/close motor drive unit

Lid and seat open/close brushed DC motor drive circuit

DC 12 V
7
7

6
6

6
6
MOSFET

Gate Driver

M
5
5

5
5

Lid and seat open/close brushed DC motor drive circuit

(with MCD)

11
11

10a

10b

10a 10b

MCU

MCD

M

Click on the number in the circuit diagram to jump to the detailed description page

Criteria for device selection
– It is necessary to select a MOSFET with the suitable rated voltage and rated current for the motor rating.
– It is necessary to select gate drivers with the suitable for the MOSFET characteristics.
– Using MOSFETs with a high heat dissipation package makes it easier to design heat dissipation.

Proposals from Toshiba

– Realize a set low power consumption of by

5

low on-resistance U-MOS Series N-ch MOSFET

5
6

U-MOS Series P-ch MOSFET

6

– Realize full-bridge drive circuit

7

Intelligent power device (IPD) – Low power drive using BiCD process 10a

7
10b

Brushed DC motor driver IC

10a 10b

– Built-in analog input interface for sensing,

low power consumption,

efficient software development MCU M3H Group

11
11

7

Warm Water Bidet Detail of power supply unit
Flyback type AC-DC converter circuit

AC Input

DC Output

Criteria for device selection
– A transistor output photocoupler with high current transfer ratio is suitable for the power supply feedback circuit.
– Small package products contribute to the reduction of circuit board area.

PWM Controller (built-in MOSFET)

Photocoupler
8
8

Proposal from Toshiba

– High current transfer ratio and high

temperature operation are realized 8

Transistor output photocoupler

8

Click on the number in the circuit diagram to jump to the detailed description page

8

Warm Water Bidet Detail of Nozzle control unit

Nozzle motor drive circuit (with transistor array)
11
11
MCU

12

Transistor Array

M

Criteria for device selection
– Small package products contribute to the reduction of circuit board area.

Click on the number in the circuit diagram to jump to the detailed description page

Proposals from Toshiba

– Built-in analog input interface for

sensing, low power consumption,

efficient software development MCU M3H Group

11
11

– Efficiency is improved by adopting

DMOS FET for output stage Transistor array

12
12

9

Recommended Devices
© 2019-2024 Toshiba Electronic Devices & Storage Corporation

Device solutions to address customer needs
As described above, in the design of warm water bidet, “High efficiency”, “Low power consumption of set” and “Miniaturization of circuit boards” are important factors. Toshiba’s proposals are based on these three solution perspectives.

High efficiency

Low power consumption of set

Miniaturization of circuit boards

High efficiency

Low loss

Small size packages

11

Device solutions to address customer needs

High efficiency

1

1 Small signal MOSFET

2

2 General purpose operational amplifier

3

3 Rectifier diode

4

4 Triac output photocoupler

5

5 U-MOS Series N-ch MOSFET

6

6 U-MOS Series P-ch MOSFET

7

7 Intelligent power device (IPD)

8

8 Transistor output photocoupler

9a

9b

9a 9b Brushless DC motor driver IC

10a

10b

10a 10b Brushed DC motor driver IC

11

11 MCU M3H Group

12

12 Transistor array

Low loss

Small size packages

12

1 Small signal MOSFET SSM3K56MFV / SSM6N56FE

High efficiency

Low loss

Small size packages

Value provided
U-MOS series MOSFET contributes to energy saving and miniaturization by improving the trade-off characteristics between on-resistance and capacitance.

Low on-resistance

Small gate input charge

High speed switching

By reducing on-resistance between drain and source, heat generation and power consumption can be kept low, and it can contribute to miniaturization.

Switching characteristics are improved by reducing the amount of gate input charge.

Trade-off characteristics of on-resistance and gate input charge

Lineup

Part number

Gate switch charge (nC)

Package
VDSS [V] ID [A] RDS(ON) [] @VGS = 4.5 V Polarity
Generation

Drain-source on-resistance (m) (Note: Toshiba internal comparison)

Reducing switching loss by high speed operation contributes to improving efficiency.

SSM3K56MFV

VESM

20

0.8

Typ.

0.186

Max

0.235

N-ch U-MOS-H

SSM6N56FE
ES6
20 0.8 0.186 0.235 N-ch x 2 U-MOS-H

Return to Block Diagram TOP

13

2 General purpose operational amplifier TC75S51FU / TC75S103F

High efficiency

Low loss

Small size packages

Value provided
CMOS single operation amplifier with a built-in phase compensator, low voltage drive, and low current consumption.

Low voltage operation is possible.

Built-in phase compensator circuit

Compared with bipolar general purpose operational amplifiers, low voltage operation is possible [Note]. VDD = ±0.75 to ±3. 5 V or 1.5 to 7 V (for TC75S51FU)
[Note] Comparison with Toshiba’s products
TC75S51FU Characteristics chart

Because the phase compensation circuit is built-in, there is no need for any external device.

Lineup
Part number
Package
VDD – VSS [V] IDD (Typ. / Max) [A] fT (Typ.) [MHz] Input, Output Full Range

TC75S51FU
USV
1.5 to 7.0 60 / 200 (@VDD = 3.0 V)
0.6 –

TC75S103F SMV
1.8 to 5.5 100 / 165 (@VDD = 3.3 V)
0.36
Return to Block Diagram TOP

14

3 Rectifier diode CMG06A

High efficiency

Low loss

Small size packages

Value provided
Wide range of products are provided, mainly small package that is suitable for high density assembly.

Surface mount / small package
Adopting M-FLATTM package which is lower in height compared to Toshiba conventional lead type contributes to the space saving of the equipment [Note].
[Note] Comparison with Toshiba’s products
CMG06A forward characteristic

Wide product lineup
Repetitive peak Reverse voltage: 200 to 1000 V Average forward current: 0.5 to 3 A Suitable product can be selected according to requirements.

Lineup
Part number
Package
IF(AV) [A] VRRM [V]

CMG06A M-FLATTM

1 600
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15

4 Triac output photocoupler TLP267J / TLP3052A

High efficiency

Low loss

Small size packages

Value provided
This photocoupler consists of a non-zero crossing photo triac, optically coupled to an infrared light emitting diode.

Non-zero cross type

Switching characteristic

Reduction of assembly area

This photocoupler is suitable for the case where the operation time is short and phase control is necessary.

It has excellent features such as high speed, low noise and silence.

4pin SO6 packages have a size of 3.7 x 7.0 x 2.1 mm. (TLP267J)

TLP267J

Internal connection

1

6

3

4

UL-approved: UL1577, File No. E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 VDE-approved: EN60747-5-5, EN62368-1 (Note)
(Note) When a VDE approved type is needed, please designate the Option (V4).

Lineup
Part Number
Package
VDRM [V] BVS [Vrms] Topr [°C] Type

TLP267J

TLP3052A

4pin SO6

5pin DIP6

600

3750

5000

-40 to 100

Non-zero-voltage turn-on

Return to Block Diagram TOP

16

5 U-MOS Series N-ch MOSFET TPH2R903PL / TPH3R003PL / TPH4R803PL / TPN2R903PL / TPN5R203PL

High efficiency

Low loss

Small size packages

Value provided
RonA characteristic has been improved and contributes to energy saving and miniaturization.

Low on-resistance

Small total gate charge

High speed switching

By reducing on-resistance between drain and source, heat generation and power consumption can be kept low, and it can contribute to miniaturization.

Small total gate charge reduces the performance required for driving the MOSFET, thereby improving the switching characteristics.

Reducing switching loss by high speed operation contributes to improving efficiency.

On resistance per unit area RonA (mmm2)

RonA reduction trend of N-ch MOSFET U-MOS-H
U-MOS-H U-MOS-H
VDSS = 60 V, RonA @VGS = 10 V (Note: Toshiba internal comparison)

Lineup
Part number

TPH2R903PL TPH3R003PL TPH4R803PL TPN2R903PL TPN5R203PL

Package

VDSS [V] ID [A] RDS(ON) [m] @VGS = 10 V

Typ. Max

Polarity

Generation

Silicon limit

30 70 (124*)
2.1 2.9 N-ch U-MOS-H

SOP Advance
30 88 (134*)
2.2 3.0 N-ch U-MOS-H

30 48 (90*)
3.6 4.8 N-ch U-MOS-H

TSON Advance
30 70 (122*)
2.1 2.9 N-ch U-MOS-H

30 38 (76*)
3.9 5.2 N-ch U-MOS-H

Return to Block Diagram TOP

17

6 U-MOS Series P-ch MOSFET TPCA8120

High efficiency

Low loss

Small size packages

Value provided
RonA characteristic has been improved and contributes to energy saving and miniaturization.

Low on-resistance
By reducing on-resistance between drain and source, heat generation and power consumption can be kept low, and it can contribute to miniaturization.
RonA reduction trend of P-ch MOSFET
(Note: Toshiba internal comparison)

Small total gate charge
Small total gate charge reduces the performance required for driving the MOSFET, thereby improving the switching characteristics.

Lineup

Part number

Package

VDSS [V] ID [A] RDS(ON) [m] @ VGS = -10 V
Polarity
Generation

Typ. Max

TPCA8120
SOP Advance
-30 -45 2.4 3.0 P-ch U-MOS
Return to Block Diagram TOP

18

7 Intelligent power device (IPD) TPD7211F

High efficiency

Low loss

Small size packages

Value provided
A gate driver with half bridge output, which can be driven with a high current (±500 mA maximum).

Half bridge type
It is a half-bridge type gate driver and is suitable for high side P-ch type and low side N-ch type MOSFET driving.

Can be driven with a high current
The output current rating of ±500 mA is secured, and high current driving is possible.

Small package
It is packaged in the small PS-8 package. PS-8: 2.8 x 2.9 x 0.8 mm

Internal block diagram and an example of application circuit
VDD
of TPD7211F

250k
STBY
100k
IN1
100k
IN2

150k

100k

Regulator Logic

Level Shift
Level Shift

150k

GND

50k

VBATT

OUT1 OUT2

P-channel Power MOSFET
M
N-channel Power MOSFET

Lineup

Part number

Package

VDD(opr) [V] IOUT [mA] Topr [°C]

TPD7211F
PS-8
5 to 18 ±500 -40 to 125
Return to Block Diagram TOP

19

8 Transistor output photocoupler TLP383

High efficiency

Low loss

Small size packages

Value provided
High current transfer ratio (CTR) is realized even in the low input current range (IF = 0.5 mA).

High current transfer ratio
Phototransistor and InGaAs infrared light emitting diode are optically coupled. Highly isolated photocouplers realize higher CTR than Toshiba’s conventional products in low input current range (@ IF = 0.5 mA).

The operating temperature range is extended to 125 °C
It is designed to operate under severe conditions of ambient temperature environment.

Current Transfer Ratio (%)

1000 100

TLP383

VCE = 5 V, Ta = 25 °C

Lineup
Part number
Package

Toshiba’s

10

conventional

product

1 0.1

0.5 1
LED input current IF (mA)

5

10

(Note: Toshiba internal comparison)

IC/IF [%] @IF = 0.5 mA, 5 mA toff (Typ.) [s] @IF = 1.6 mA
BVS [Vrms] Topr [°C]

TLP383
4pin SO6L
50 to 600 28
5000 -55 to 125
Return to Block Diagram TOP

20

9a Single phase brushless DC motor driver TC78B002FNG / TC78B002FTG
Value provided
Simple fan motor drive with low noise & low vibration.

High efficiency

Low loss

Small size packages

Suitable for small fan motor
It is a single phase full wave driver and suitable for small brushless DC fan motor.

Low noise and low vibration motor driving
Smooth waveform by soft switching drive realizes low noise and low vibration driving of motor.

Small package
Small WQFN16 package with high heat dissipation. (TC78B002FTG)

WQFN16 Package (3 x 3 x 0.75 mm)

Lineup
Part number Power supply voltage
Output current Drive type
Features & Others
Package

TC78B002FNG

TC78B002FTG

5.5 to 16 V (operating range)

1.5 A (operating range)

Single phase full wave drive

PWM control, Soft switching drive Quick start, Hall bias circuit Error detection: Current limit, Thermal shutdown

SSOP16

WQFN16

Return to Block Diagram TOP

21

9b Three-phase brushless DC motor driver TC78B016FTG

High efficiency

Low loss

Small size packages

Value provided

Toshiba’s proprietary technology eliminates the need for phase adjustment and achieves high efficiency for a wide range of rotation speeds.

High efficiency is achieved for a wide range of rotation speeds

Motor control with low noise, and low vibration

Low loss, Low heat

Toshiba’s proprietary automatic advance angle control technology ensures high efficiency motor control at all times, regardless of motor speed, load torque and power supply voltage.

Sine wave drive system with smooth current waveforms contributes to lower motor noise and vibration compared to conventional square wave drive system [Note].

Since the output on-resistance is a small 0.24 (Typ.), the power loss of the IC itself during operation can be kept low.

[Note] Comparison with Toshiba products

Lineup

Part number Power supply voltage
Output current Drive system
Features

TC78B016FTG
6 to 30 V (operating range)
3 A (operating range)
Sine wave drive system Phase control: Optimum phase control of voltage and current Hall device / Hall IC compatible Speed control input: PWM signal / analog voltage input Error detection: Thermal shutdown, overcurrent detection, motor lockout detection Output on-resistance (sum of top and bottom): 0.24 (Typ.)

WQFN36 package (5 x 5 x 0.8 mm)

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22

10a 1ch brushed DC motor driver TB67H450AFNG / TB67H451AFNG

High efficiency

Low loss

Small size packages

Value provided
High voltage and low power consumption characteristics are realized by BiCD process. These are simple single channel version.

High voltage (50 V)

Wide operation voltage range

Highly compatible package

Maximum rating of the output voltage is improved to 50 V to allow margin for air discharge test, etc.

Wide power supply voltage range from 4.5 to 44 V supports battery drive applications.

HSOP8 package compatible with competitor’s products or Toshiba’s conventional products is adopted.

Simple solution

TSD IN1 IN2

VCC
Control Logic

VM

UVLO
PreDriver

OUT1
H-Bridge OUT2

VREF

ISD

Current Comp

GND

RS

M
P-HSOP8-0405-1.27-002 (4.9 x 6.0 mm)

Lineup
Part number Motor type Output voltage [V] Output current [A] Output on- resistance (High side + Low side) (Typ.) [] Output circuit Control interface Phase mode Abnormality detection function
Package

TB67H450AFNG

TB67H451AFNG

Brushed DC motor

50

3.5

0.6

1 circuit

1 mode

2-phase, 1-2 phase excitation

Thermal shutdown, over current, under voltage lockout

P-HSOP8-0405-1.27-002

Return to Block Diagram TOP

23

10b 2ch brushed DC motor driver TB67H400AFNG / TB67H400AFTG / TB67H400AHG / TB67H400ANG / TB67H410FTG / TB67H410NG

High efficiency

Low loss

Small size packages

Value provided
High voltage, high current and low power consumption characteristics are realized by BiCD process. These 2-channel versions can also drive stepping motors.

High voltage (50 V)/ High current

Three selectable drive modes

Various package types

Maximum rating of the output voltage is improved to 50 V to allow margin for air discharge test, etc. In addition, the parallel control function (Large mode) of the output part supports one channel high current driving.

The H-bridge combination can be tailored according to the type of motor and the required current capacity as (1) single stepping motor drive, (2) dual brushed DC motor drive and (3) High current, single brushed DC motor drive.

TB67H400A offers four types (HTSSOP48, WQFN48, HZIP25 and SDIP24) and TB67H410 offers two types (WQFN48 and SDIP24) of packages.

Three selectable drive modes

Lineup

(3) High current, (1) Single stepping motor drive (2) Dual brushed DC motor drive single brushed DC motor drive

Part number Motor type Output voltage [V]

TB67H400AFNG / FTG / HG / NG TB67H410FTG / NG Brushed DC motor 50

Output current [A]

4.0 (Small mode)

2.5 (Small mode)

Output on-resistance (High side + Low side) (Typ.) []

0.49 (Small mode)

0.8 (Small mode)

Output circuit

2 circuits (Small mode)

Control interface

4 modes

High current,

Step resolution / excitation mode Abnormality detection function
Package

1/1, 1/2 step (2-phase, 1-2 phase excitation)

Thermal shutdown, overcurrent, power on reset

HTSSOP48 / WQFN48 / HZIP25 / SDIP24

WQFN48 / SDIP24

parallel control mode

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24

11 MCU TXZ+TM 3A Series M3H Group

High efficiency

Low loss

Small size packages

Value provided

These MCUs include AD converters, timers, and three-phase PWM output(Error accuracy: ±1%). These can control the system with low power consumption.

Built-in Arm® Cortex®-M3 CPU core

System cost down and development efficiency improvement

Small package and low power consumption

These implement Arm Cortex-M3 core with 120 MHz maximum operation frequency. Various development tool and their partners allow users many options.

These execute sensing data monitoring and motor control efficiently by multiple built-in AD converters and timers. It also has a built-in FLASH memory that can be rewritten 0.1 million times. The product with 1 MB ROM can rewrite the codes while the microcomputer continues operation.

These support low power consumption library and stand by function and contribute to reduce power consumption. The packages lineup includes small LQFP64 to LQFP144.

TMPM3HQF10BFG TMPM3HQFDAFG
Package P-LQFP144-2020-0.50-002

TMPM3HNF10BFG TMPM3HNFDAFG
Package P-LQFP100-1414-0.50-002

TMPM3HLF10BUG TMPM3HLFDAUG
Package P-LQFP64-1010-0.50-003

Lineup

Part number M3H (2) M3H (1)

TMPM3HQF10BFG TMPM3HQFD/Z/YAFG

TMPM3HNF10BFG TMPM3HNFD/Z/YAFG

TMPM3HLF10BUG TMPM3HLFD/Z/YAUG

Max. operation frequency

120 MHz

ROM (Flash)

M3H (2) M3H (1)

1024 KB 512 / 384 / 256 KB

RAM

M3H (2) M3H (1)

130 KB (with parity) 66 KB (with parity)

Timer

32bit x 8ch (16bit x 16ch)

AD converter

21ch (12bit)

17ch (12bit)

12ch (12bit)

Serial communication UART: 8ch, I2C: 4ch, TSPI: 5ch UART: 8ch, I2C: 3ch, TSPI: 4ch UART: 7ch, I2C: 2ch, TSPI: 1ch

Package

P-LQFP144-2020-0.50-002 P-LQFP100-1414-0.50-002 P-LQFP64-1010-0.50-003

Return to Block Diagram TOP

25

12 Transistor array TBD62003AFWG / TBD62083AFG / TBD62064AFAG

High efficiency

Low loss

Small size packages

Value provided
DMOS FET is used for the output of drive circuit and realizes low loss. And CMOS input can control directly from controller’s I/O, etc.

Rich product lineup

Built-in output clamp diode

High current drive is possible

In addition to the listed products, we have lineup of various packaged products (such as DIP, SOL, SOP, SSOP, etc.) and source output type products.

Built-in output clamp diode regenerates the back electromotive force generated by switching of an inductive load.

The load can also be driven with higher current by connecting multiple outputs in parallel.

Equivalent circuit

Clamp Diode

INPUT

Clamp Circuit

COMMON OUTPUT

Note: Equivalent circuit may be simplified for explanatory purpose.

Lineup

Part number Package
Output type Number of channels
Input level IOUT [mA/ch] VOUT [V]

TBD62003AFWG P-SOP16-0410-1.27-002
Sink 7ch H 500 50

TBD62083AFG SOP18-P-375-1.27
Sink 8ch H 500 50

TBD62064AFAG P-SSOP24-0613-1.00-001
Sink 4ch H 1,500 50

Return to Block Diagram TOP

26

If you are interested in these products and have questions or comments about any of them, please do not hesitate to contact us below: Contact address: https://toshiba.semicon-storage.com/ap-en/contact.html
© 2019-2024 Toshiba Electronic Devices & Storage Corporation

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This terms of use is made between Toshiba Electronic Devices and Storage Corporation (“We”) and Customer who downloads or uses this Reference Design. Customer shall comply with this terms of use. This Reference Design means all documents and data in order to design electronics applications on which our semiconductor device is embedded.
Section 1. Restrictions on usage 1. This Reference Design is provided solely as reference data for designing electronics applications. Customer shall not use this Reference Design for any other purpose, including without limitation, verification of reliability. 2. Customer shall not use this Reference Design for sale, lease or other transfer. 3. Customer shall not use this Reference Design for evaluation in high or low temperature, high humidity, or high electromagnetic environments. 4. This Reference Design shall not be used for or incorporated into any product or system whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
Section 2. Limitations 1. We reserve the right to make changes to this Reference Design without notice. 2. This Reference Design should be treated as a reference only. WE ARE NOT RESPONSIBLE FOR ANY INCORRECT OR INCOMPLETE DATA AND INFORMATION. 3. Semiconductor devices can malfunction or fail. When designing electronics applications by referring to this Reference Design, Customer is responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of semiconductor devices could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Customer must also refer to and comply with the latest versions of all relevant our information, including without limitation, specifications, data sheets and application notes for semiconductor devices, as well as the precautions and conditions set forth in the “Semiconductor Reliability Handbook”. 4. Designing electronics applications by referring to this Reference Design, Customer must evaluate the whole system sufficiently. Customer is solely responsible for applying this Reference Design to Customer’s own product design or applications. WE ASSUME NO LIABILITY FOR CUSTOMER’S PRODUCT DESIGN OR APPLICATIONS. 5. WE SHALL NOT BE RESPONSIBLE FOR ANY INFRINGEMENT OF PATENTS OR ANY OTHER INTELLECTUAL PROPERTY RIGHTS OF THIRD PARTIES THAT MAY RESULT FROM THE USE OF THIS REFERENCE DESIGN. NO LICENSE TO ANY INTELLECTUAL PROPERTY RIGHT IS GRANTED BY THIS TERMS OF USE, WHETHER EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE. 6. THIS REFERENCE DESIGN IS PROVIDED “AS IS”. WE (a) ASSUME NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (b) DISCLAIM ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO THIS REFERENCE DESIGN, INCLUDING WITHOUT LIMITATION, WARRANTIES OR CONDITIONS OF FUNCTION AND WORKING, WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
Section 3. Terms and Termination It is assumed that Customer agrees to any and all this terms of use if Customer downloads or uses this Reference Design. We may, at its sole and exclusive discretion, change, alter, modify, add, and/or remove any part of this terms of use at any time without any prior notice. We may terminate this terms of use at any time and without any cause. Upon termination of this terms of use, Customer shall eliminate this Reference Design. Furthermore, upon our request, Customer shall submit to us a written confirmation to prove elimination of this Reference Design.
Section 4. Export Control Customer shall not use or otherwise make available this Reference Design for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). This Reference Design may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Act and the U.S. Export Administration Regulations. Export and re-export of this Reference Design is strictly prohibited except in compliance with all applicable export laws and regulations.
Section 5. Governing Laws This terms of use shall be governed and construed by laws of Japan, without reference to conflict of law principle.
Section 6. Jurisdiction Unless otherwise specified, Tokyo District Court in Tokyo, Japan shall be exclusively the court of first jurisdiction for all disputes under this terms of use.

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RESTRICTIONS ON PRODUCT USE
· Toshiba Electronic Devices & Storage Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice.
· This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
· Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
· PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT (“UNINTENDED USE”). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative or contact us via our website.
· Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
· Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations.
· The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
· ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
· Product may include products using GaAs (Gallium Arsenide). GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
· Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
· Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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Arm and Cortex are registered trademarks of Arm Limited (or its subsidiaries) in the US and/or elsewhere. M-FLATTM and TXZ+TM are trademarks of Toshiba Electronic Devices & Storage Corporation. All other company names, product names, and service names may be trademarks of their respective companies.