ON Semiconductor NVBLS0D5N04C MOSFET Power, Single N-Channel Instructions
- August 14, 2024
- ON Semiconductor
Table of Contents
MOSFET – Power, Single
N-Channel, TOLL
40 V, 0.57 mΩ, 300 A
NVBLS0D5N04C
www.onsemi.com
NVBLS0D5N04C MOSFET Power, Single N-Channel
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 40 V | 0.57 mΩ @ 10 V | 300 A |
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NVBLS0D5N04CTXG | H−PSOF8L (Pb−Free) | 2000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC−Q101 Qualified and PPAP Capable
- Small Footprint (TOLL) for Compact Design
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 40 | V |
| Gate−to−Source Voltage | VGS | +20/−16 | V |
| Continuous Drain Current RθJC (Notes 1, 3) | Steady State | TC = 25°C | ID |
A
TC = 100°C| 300
Power Dissipation RθJC (Note 1)| TC = 25°C| PD| 198.4| W
TC = 100°C| 97.4
Continuous Drain Current RθJA (Notes 1, 2, 3)| Steady State| TA = 25°C| ID|
65| A
TA = 100°C| 46
Power Dissipation RθJA (Notes 1, 2)| TA = 25°C| PD| 4.3| W
TA = 100°C| 2.1
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 4700| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to +175| °C
Source Current (Body Diode)| IS| 170| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 55 A, L = 1 mH)| EAS|
1512| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State | RθJC | 0.77 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RθJA | 35 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Current is limited by bondwire configuration.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
ELECTRICAL CHARACTERISTICS
Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter| Symbol| Test Conditions| Min| Typ|
Max| Units
---|---|---|---|---|---|---
OFF CHARACTERISTICS
| Drain−to−Source Breakdown Voltage | V(BR)DSS | ID = 250 µA, VGS = 0 V | 40 | V | ||
|---|---|---|---|---|---|---|
| Drain−to−Source Breakdown Voltage Temperature Coefficient | V(BR)DSS/TJ | |||||
| 21.3 | mV/°C | |||||
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V | TJ = 25°C | |||
| 1 | µA | |||||
| TJ = 175°C | 1 | mA | ||||
| Gate−to−Source Leakage Current | IGSS | VDS = 0 V, VGS = +20/−16 V | ±100 | nA |
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 475 µA | 2 | 2.8 | 4 | V |
|---|---|---|---|---|---|---|
| Threshold Temperature Coefficient | VGS(th)/TJ | −7.4 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 50 A | 0.5 | 0.57 | mΩ |
CHARGES, CAPACITANCES & GATE RESISTANCE
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1 MHz | 12600 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | Coss | 6705 | pF | |||
| Reverse Transfer Capacitance | Crss | 227 | pF | |||
| Gate Resistance | Rg | VGS = 0.5 V, f = 1 MHz | 1.8 | Ω | ||
| Total Gate Charge | QG(tot) | VGS = 10 V, VDS = 20 V, ID = 50 A | 185 | nC | ||
| Threshold Gate Charge | QG(th) | VGS = 0 to 2 V | 22 | nC | ||
| Gate−to−Source Gate Charge | Qgs | VDD = 32 V, ID = 50 A | 48 | nC | ||
| Gate−to−Drain “Miller” Charge | Qgd | 38 | nC | |||
| Plateau Voltage | VGP | 4.2 | V |
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(on)| VGS = 10 V, VDD = 20 V, ID = 50 A, RGEN = 6 Ω| |
40| | ns
---|---|---|---|---|---|---
Turn−On Rise Time| tr| | 84| | ns
Turn−Off Delay Time| td(off)| | 164| | ns
Turn−Off Fall Time| tf| | 81| | ns
DRAIN−SOURCE DIODE CHARACTERISTICS
| Source−to−Drain Diode Voltage | VSD | ISD = 50 A, VGS = 0 V | 0.76 | 1.2 | V | |
|---|---|---|---|---|---|---|
| Reverse Recovery Time | trr | VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A | 108 |
ns
Charge Time| ta| | 62| | ns
Discharge Time| tb| | 46| | ns
Reverse Recovery Charge| Qrr| | 288| | nC
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under
different conditions.
4. Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
5. Switching characteristics are independent of operating junction
temperatures
TYPICAL CHARACTERISTICS
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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