onsemi NTHL040N120M3S Silicon Carbide (SiC) MOSFET Owner’s Manual
- June 16, 2024
- onsemi
Table of Contents
DATA SHEET
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Silicon Carbide (SiC)
MOSFET – EliteSiC,
40 mohm, 1200 V, M3S,
TO-247-3L
NTHL040N120M3S
Features
- Typ. RDS(on) = 40 mΩ @ VGS = 18 V
- Ultra Low Gate Charge (QG(tot) = 75 nC)
- High Speed Switching with Low Capacitance (Coss = 80 pF)
- 100% Avalanche Tested
- This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)
Typical Applications
- Solar Inverters
- Electric Vehicle Charging Stations
- UPS (Uninterruptible Power Supplies)
- Energy Storage Systems
- SMPS (Switch Mode Power Supplies)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 1200 | V |
| Gate−to−Source Voltage | VGS | −10/+22 | V |
| Recommended Operation Values of Gate−to−Source Voltage | TC < 175°C | VGSop | |
| −3/+18 | V | ||
| Continuous Drain Current (Notes 1, 3) | Steady State | TC = 25°C | ID |
| Power Dissipation (Note 1) | PD | 231 | W |
| Continuous Drain Current (Notes 1, 3) | Steady State | TC = 100°C | ID |
| Power Dissipation (Note 1) | PD | 115 | W |
| Pulsed Drain Current (Note 2) | TC = 25°C | IDM | 134 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to |
+175
| °C
Source Current (Body Diode) TC = 25°C, VGS = −3 V| IS| 45| A
Single Pulse Drain−to−Source Avalanche Energy (Note 4)| EAS| 143| mJ
Maximum Lead Temperature for Soldering (1/8² from case for 5 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Repetitive rating, limited by max junction temperature.
- The maximum current rating is based on typical RDS(on) performance.
- EAS of 143 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 16.9 A, VDD = 100 V, VGS = 18 V.
V (BR)DSS| R DS(ON) MAX| I D MAX
---|---|---
1200 V| 54 mΩ @ 18 V| 54 A
N−CHANNEL MOSFET
MARKING DIAGRAM
HL040N120M3S = Specific Device Code
A = Assembly Location
Y = Year
WW = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
| Device | Package | Shipping |
|---|---|---|
| NTHL040N120M3S | TO−247−3L | 30 Units / Tube |
Table 1. THERMAL CHARACTERISTICS
| Parameter | Symbol | Max | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 1) | RθJC | 0.65 | ° C/W |
| Junction−to−Ambient − Steady State (Note 1) | RθJA | 40 |
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF−STATE CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 1 mA| 1200| −| −|
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID = 1
mA, referenced to 25°C (Note 6)| −| 0.3| −| V/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 1200 V| TJ = 25°C| −|
−| 100| µA
Gate−to−Source Leakage Current| IGSS| VGS = +22/−10 V, VDS = 0 V| −| −| ±1| µA
ON−STATE CHARACTERISTICS (Note 2)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 10 mA | 2.04 | 2.9 | 4.4 | V |
|---|---|---|---|---|---|---|
| Recommended Gate Voltage | VGOP | −3 | − | +18 | V | |
| Drain−to−Source On Resistance | RDS(on) | VGS = 18 V, ID = 20 A, TJ = 25°C | − | |||
| 40 | 54 | mΩ | ||||
| VGS = 18 V, ID = 20 A, TJ = 175°C (Note 6) | − | 80 | − | |||
| Forward Transconductance | gFS | VDS = 10 V, ID = 20 A (Note 6) | − | 16 | − | S |
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance| CISS| VGS = 0 V, f = 1 MHz, VDS = 800 V (Note 6)| −| 1700|
−| pF
---|---|---|---|---|---|---
Output Capacitance| COSS| −| 80| −
Reverse Transfer Capacitance| CRSS| −| 7| −
Total Gate Charge| QG(TOT)| VGS = −3/18 V, VDS = 800 V, ID = 20 A (Note 6)| −|
75| −| nC
Threshold Gate Charge| QG(TH)| −| 4.4| −
Gate−to−Source Charge| QGS| −| 14| −
Gate−to−Drain Charge| QGD| −| 22| −
Gate−Resistance| RG| f = 1 MHz| −| 3.8| −| Ω
SWITCHING CHARACTERISTICS
Turn−On Delay Time| td(ON)| VGS = −3/18 V, VDS = 800 V, ID = 20 A, RG = 4.7 Ω
Inductive load (Notes 5, 6)| −| 13| −| ns
---|---|---|---|---|---|---
Rise Time| tr| −| 32| −|
Turn−Off Delay Time| td(OFF)| −| 37| −|
Fall Time| tf| −| 11| −|
Turn−On Switching Loss| EON| −| 412| −| µJ
Turn−Off Switching Loss| EOFF| −| 74| −|
Total Switching Loss| Etot| −| 486| −|
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Source−Drain Diode Forward Current| ISD| VGS = −3 V, TC = 25°C
(Note 6)| −| −| 45| A
---|---|---|---|---|---|---
Pulsed Source−Drain Diode Forward Current (Note 2)| ISDM| −| −| 134
Forward Diode Voltage| VSD| VGS = −3 V, ISD = 20 A, TJ = 25°C| −| 4.5| −| V
Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
SOURCE−DRAIN DIODE CHARACTERISTICS
Reverse Recovery Time| tRR| VGS = −3/18 V, ISD = 20 A, dIS/dt = 1000 A/µs, VDS
= 800 V (Note 6)| −| 17| −| ns
---|---|---|---|---|---|---
Reverse Recovery Charge| QRR| −| 81| −| nC
Reverse Recovery Energy| EREC| −| 6.7| −| µJ
Peak Reverse Recovery Current| IRRM| −| 9.3| −| A
Charge Time| TA| −| 9.5| −| ns
Discharge Time| TB| −| 7.7| −| ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- EON/EOFF result is with body diode.
- Defined by design, not subject to production test.
PACKAGE DIMENSIONS
NOTES: UNLESS OTHERWISE SPECIFIED.
A. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DRAWING CONFORMS TO ASME Y14.5 – 2009.
D. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED BY L1.
E. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY L1.
| DIM | MILLIMETERS |
|---|---|
| MIN | NOM |
| A | 4.58 |
| Al | 2.20 |
| A2 | 1.40 |
| D | 20.32 |
| E | 15.37 |
| E2 | 4.96 |
| e | – |
| L | 19.75 |
| L1 | 3.69 |
| Ø P | 3.51 |
| Q | 5.34 |
| S | 5.34 |
| b | 1.17 |
| b2 | 1.53 |
| b4 | 2.42 |
| c | 0.51 |
| D1 | 13.08 |
| D2 | 0.51 |
| E1 | 12.81 |
| Ø P1 | 6.60 |
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