onsemi NVHL040N120SC1 Silicon Carbide SiC MOSFET Instructions

: June 15, 2024
: onsemi

Table of Contents

onsemi NVHL040N120SC1 Silicon Carbide SiC MOSFET
Product Information
Product Usage Instructions
Features
Typical Applications
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
PACKAGE DIMENSIONS
- ADDITIONAL INFORMATION
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onsemi NVHL040N120SC1 Silicon Carbide SiC MOSFET

Product Information

Specifications

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	VDSS	1200	V
Gate-to-Source Voltage	VGS	-15/+25	V
Recommended Operation Values of Gate-to-Source Voltage	VGSop	-5/+20	V
Continuous Drain Current	ID	60	A
Power Dissipation	PD	348	W
Pulsed Drain Current (Note 2)	IDM	60	A
Current Capability (RG = 4.7 W)	ID	416	A
Operating Junction and Storage Temperature Range
Source Current (Body Diode)	IS	34	A

Product Usage Instructions

Installation

Ensure that the product is installed in a suitable environment with proper ventilation to prevent overheating.
Connect the drain, source, and gate terminals of the product to the corresponding components in your circuit.
Refer to the product datasheet for the pinout and package information.

Electrical Connections

Make sure to provide the appropriate voltage and current to the drain and source terminals of the product.
Connect the gate terminal to the control signal source with the recommended gate voltage.
Ensure proper grounding of the product and other components in your circuit.

Thermal Management

Consider the thermal resistance values specified for the product and ensure that the operating temperature of the device is within the recommended range.
Provide adequate heat sinking or cooling mechanisms to maintain the temperature within acceptable limits.

Frequently Asked Questions (FAQ)

Q1: What is the maximum drain-to-source voltage for this product?

A1: The maximum drain-to-source voltage is 1200V.

Q2: What is the recommended gate voltage range?

A2: The recommended gate voltage range is -15V to +25V.

Q3: What is the maximum continuous drain current?

A3: The maximum continuous drain current is 60A.

Q4: How many units are included in each package?

A4: Each package contains 30 units.

Features

Typ. RDS(on) = 40 m
Ultra Low Gate Charge (Typ. QG(tot) = 106 nC)
Low Effective Output Capacitance (typ. Coss = 140 pF)
100% UIL Tested
AEC−Q101 Qualified and PPAP Capable
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second-level interconnection)

Typical Applications

Automotive On Board Charger
Automotive DC−DC converter for EV/HEV

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	1200	V
Gate−to−Source Voltage	VGS	−15/+25	V
Recommended Operation Values of Gate-to-Source Voltage	TC < 175°C	VGSop
−5/+20	V
Continuous Drain Current R8JC	Steady State	TC = 25°C	ID
Power Dissipation R8JC	PD	348	W
Continuous Drain Current R8JC	Steady State	TC = 100°C	ID
Power Dissipation R8JC	PD	174	W
Pulsed Drain Current (Note 2)	TA = 25°C	IDM	240
Single Pulse Surge Drain Current Capability	TA = 25°C, tp = 10 µs, RG = 4.7
Q	IDSC	416	A
Operating Junction and Storage Temperature Range	TJ, Tstg	− 55 to

+175

| °C
Source Current (Body Diode)| IS| 34| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23 A, L = 1 mH) (Note 3)| EAS| 613| MJ

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter	Symbol	Value	Unit
Junction−to−Case (Note 1)	R8JC	0.43	°C/W
Junction−to−Ambient (Note 1)	R8JA	40	°C/W

The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
Repetitive rating, limited by max junction temperature.
EAS of 613 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 35 A, VDD = 120 V, VGS = 20 V.

V (BR)DSS	R DS(on) MAX	I D MAX
1200 V	56 mQ @ 20 V	60 A

N−CHANNEL MOSFET

MARKING DIAGRAM

ORDERING INFORMATION

Device	Package	Shipping
NVHL040N120SC1	TO247−3L	30 Units / Tube

ELECTRICAL CHARACTERISTICS

Parameter| Symbol| Test Conditions| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS =0 V, ID = 1 mA| 1200| −| −| V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID = 1 mA, referenced to 25 C| −| 450| −| mV/ C
Zero Gate Voltage Drain Current| IDSS| VGS =0 V, VDS = 1200 V, TJ = 25 C| −| −| 100| µA
VGS =0 V, VDS = 1200 V, TJ = 175 C| −| −| 250
Gate−to−Source Leakage Current| IGSS| VGS = +25/−15 V, VDS =0V| −| −| ±1| µA

ON CHARACTERISTICS

Gate Threshold Voltage	VGS(th)	VGS = VDS, ID = 10 mA	1.8	2.97	4.3	V
Recommended Gate Voltage	VGOP		−5	−	+20	V
Drain−to−Source On Resistance	RDS(on)	VGS = 20 V, ID = 35 A, TJ = 25 C	−
39	56	mQ
VGS = 20 V, ID = 35 A, TJ = 175 C	−	67	100
Forward Transconductance	CFS	VDS = 20 V, ID = 35A	−	20	−	S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance	CISS	VGS = 0 V, f = 1 MHz, VDS = 800 V	−	1781	−	pF
Output Capacitance	COSS	−	140	−
Reverse Transfer Capacitance	CROSS	−	12	−
Total Gate Charge	QG(tot)	VGS = −5/20 V, VDS = 600 V, ID = 47A	−	106	−	C
Threshold Gate Charge	QG(th)	−	16	−
Gate−to−Source Charge	QGS	−	34	−
Gate−to−Drain Charge	QGD	−	26	−
Gate Resistance	RG	f = 1 MHz	−	2.2	−	Q

SWITCHING CHARACTERISTICS

Turn-On Delay Time| td(on)| VGS = −5/20 V, VDS = 800 V, ID = 47 A, RG = 4.7 Q,

Inductive Load

| −| 18| −| ns
---|---|---|---|---|---|---
Rise Time| tr| −| 41| −|
Turn−Off Delay Time| td(off)| −| 33| −|
Fall Time| tf| −| 10.4| −|
Turn-On Switching Loss| EON| −| 1003| −| µJ
Turn-Off Switching Loss| EOFF| −| 247| −|
Total Switching Loss| ETOT| −| 1248| −|

DRAIN−SOURCE DIODE CHARACTERISTICS

Continuous Drain−to−Source Diode Forward Current| ISD| VGS = −5 V, TJ = 25 C| −| −| 34| A
---|---|---|---|---|---|---
Pulsed Drain−to−Source Diode Forward Current (Note 2)| ISDM| VGS = −5 V, TJ = 25 C| −| −| 240| A
Forward Diode Voltage| VSD| VGS = −5 V, ISD = 17.5 A, TJ = 25 C| −| 3.8| −| V
Reverse Recovery Time| tRR| VGS = −5/20 V, ISD = 47 A,

dIS/dt = 1000 A/µs

| −| 24| −| ns
Reverse Recovery Charge| QRR| −| 125| −| C
Reverse Recovery Energy| EREC| −| 8.5| −| µJ
Peak Reverse Recovery Current| IRRM| −| 10.4| −| A
Charge Time| ta| −| 12.4| −| ns
Discharge Time| TB| −| 11.6| −| ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

TYPICAL CHARACTERISTICS

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

DOCUMENT NUMBER:| 98AON93302G| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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DESCRIPTION:| TO − 247 − 3LD|

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