Diotec BC547 General Purpose Si-Epitaxial Planer Transistors Instructions

Diotec BC547 General Purpose Si-Epitaxial Planer Transistors

Product Information

• Product Name: BC546xBK … BC549xBK
• Type: NPN
• Version: 2009-12-03
• Package Type: TO-92 (10D3)
• Weight: 0.18 g
• Power Dissipation: 500 mW
• Collector-Emitter Voltage (B-E short): VCES = 85 V (BC546), 65 V (BC547), 80 V (BC548/BC549)
• Collector-Base Voltage (E open): VCBO = 50 V (BC546), 30 V (BC547), 45 V (BC548/BC549)
• Emitter-Base Voltage (C open): VEB0 = 5 V Collector Current: IC = 100 mA (BC546/BC547), 200 mA (BC548/BC549)
• Maximum Operating Junction Temperature: Tj = 150°C

Product Usage Instructions

1. Ensure that the product is properly connected and secured in the circuit.
2. Make sure to observe the correct polarity when connecting the product.
3. Do not exceed the specified voltage and current ratings.
4. When using the product in applications where failure or malfunction may directly affect human life or health, contact Diotec Semiconductor AG’s Managing Board in advance to confirm the suitability of the product.
5. Incorporate sufficient safety measures in your designs to prevent personal injury, fire, or environmental damage.
6. Keep in mind that all information described or contained herein are subject to change without notice. Contact Diotec to obtain the latest information before incorporating the product into any design.

Please note that the provided information is intended only to enable the buyer to order Diotec’s products and should not be used for any other purpose.

For more detailed information and updates, please visit http://diotec.com/.

Version 2009-12-03

• Power dissipation: 500 mW
• Plastic case: TO-92 (10D3)
• Weight approx. : 0.18 g
• Plastic material has UL classification 94V-0 Special packaging bulk

INSTRUCTIONS

Maximum ratings (TA = 25°C)

Characteristics (T j = 25°C) Kennwerte (T j = 25°C)

typ. 90

| ****

typ. 150

| ****

typ. 270

VCE = 5 V, IC = 10 µA| hFE
 | VCE = 5 V, IC = 2 mA| hFE| 110 … 220| 200 … 450| 420 … 800
VCE = 5 V, IC = 100 mA| hFE| typ. 120| typ. 200| typ. 400
h-Parameters at/bei VCE = 5 V, IC = 2 mA, f = 1 kHz| ****

typ. 220

| ****

typ. 330

| ****

typ. 600

Small signal current gain Kleinsignal-Stromverstärkung| hfe
 | Input impedance – Eingangs-Impedanz| hie| 1.6…. 4.5 kΩ| 3.2… 8.5 kΩ| 6 … 15 kΩ
Output admittance – Ausgangs-Leitwert| hoe| 18 < 30 µS| 30 < 60 µS| 60 < 110 µS
Reverser voltage transfer ratio Spannungsrückwirkung| hre| typ. 1.510-4| typ. 210-4| typ. 3*10-4

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom VCE    = 80 V, (B-E short)                                 BC546

VCE    = 50 V, (B-E short)                                 BC547

VCE    = 30 V, (B-E short)                                 BC548 / BC549

VCE  = 80 V, Tj  = 125°C, (B-E short)                BC546

VCE  = 50 V, Tj  = 125°C, (B-E short)                BC547

VCE  = 30 V, Tj  = 125°C, (B-E short)                BC548 / BC549

Collector-Emitter saturation voltage – Kollektor-EmitterSättigungs IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base saturation voltage – Basis-Sättigungsspannung 2) IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-Emitter-voltage – Basis-Emitter-Spannung 2) VCE = 5 V, IC = 2 mA

VCE = 5 V, IC = 10 mA

| ****

ICES ICES ICES

ICES ICES ICES

spg. 2)

VCEsat VCEsat

VBEsat VBEsat

VBE VBE

| Min.

–

–

–

–

–

–

–

–

–

–

580 mV

–

| Typ.

0.2 nA

0.2 nA

0.2 nA

–

–

–

80 mV

200 mV

700 mV

900 mV

660 mV

–

| Max.

15 nA

15 nA

15 nA

4 µA

4 µA

4 µA

200 mV

600 mV

–

–

700 mV

720 mV

---|---|---|---|---
Gain-Bandwidth Product – Transitfrequenz|  |  |  |
VCE = 5 V, IC = 10 mA, f = 100 MHz| fT| –| 300 MHz| –
Collector-Base Capacitance – Kollektor-Basis-Kapazität|  |  |  |
VCB = 10 V, IE =ie = 0, f = 1 MHz| CCBO| –| 3.5 pF| 6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität|  |  |  |
VEB = 0.5 V, IC = ic = 0, f = 1 MHz| CEB0| –| 9 pF| –
Noise figure – Rauschzahl|  |  |  |  |
VCE = 5 V, IC = 200 µA, RG = 2 kΩ| BC546 / BC547| F| –| 2 dB| 10 dB
f = 1 kHz, Δf = 200 Hz| BC548 / BC549| F| –| 1.2 dB| 4 dB
Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft

Recommended complementary PNP transistors Empfohlene komplementäre PNP- Transistoren

| RthA| < 200 K/W 1

BC556 … BC5

| )

59

Available current gain groups per type Lieferbare Stromverstärkungsgruppen pro Typ| BC546A BC547A| BC546B BC547B| ****

BC547C

 | BC548A| BC548B BC549B| BC548C BC549C

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

All rights reserved
The information presented in our data sheets and other docu- ments is to the best of our knowledge true and accurate. It de- scribes the type of component or application and shall not be considered as assured characteristics. No warranty or guaran- tee, expressed or implied is made regarding the capacity, deliv- ery, performance or suitability of any product or circuit etc, nei- ther does it convey any license under the patent rights of oth- ers. Diotec reserves the right to make changes without notice, in order to improve reliability, function or design or otherwise. However, regular updating of all product information is provided on our website http://diotec.com/, at “Products/Product Changes” respectively “What’ s new/Datasheets”. All Diotec products and materials are sold subject to our “Standard Terms and Conditions of Business”, to be found in our data book or on our website at “Company”. The reproduction of all documents is prohibited without the expressed written permission of Diotec Semiconductor AG’s managing board.

Disclaimer

1. All products described or contained are designed and intend-ed for use in standard applications, so called commercial/indus-trial grade, requiring an ordinary level of reliability. Customers using these parts in applications requiring a special or specific grade of quality or reliability, such as (but not limited to) life supporting medical, military, aerospace, submarines, nuclear power etc, are obliged to validate whether the use in such cas-es is appropriate. Usage in such cases is on the own and sole risk of the customer.
2. If these products are to be used in applications requiring a special or specific grade of quality or reliability in which failure or malfunction of the product may directly affect human life or health, contact in advance Diotec Semiconductor AG’s Managing Board (Heitersheim, Germany) to confirm that the intended use of the product is appropriate.
3. Although Diotec continuously enhances the quality and relia-bility of its products, customers must incorporate sufficient safe-ty measures in their designs, such as redundancy, fire contain-ment, and anti-failure, so that personal injury, fire or environ-mental damage can be prevented. Diotec excludes explicitly ev-ery implied warranty or liability regarding the fitness of the products to any other than standard applications.
4. All information described or contained herein are subject to change without notice. Please contact Diotec to obtain the lat-est information before incorporating Diotec products into any design.
5. All information described and contained herein are intended only to enable the buyer to order Diotec’s products. The infor-mation must not be used for any other purpose.
6. In the event that any product described or contained herein falls under the category of strategic products controlled by the Bundesamt für Wirtschaft und Ausfuhrkontrolle, Germany, this product must not be exported without obtaining an export li-cense from the Bundesministerium für Wirtschaft und Technolo-gie, Germany in accordance with the valid laws.

© Diotec Semiconductor AG

http://diotec.com/

References

• Diotec Semiconductor Germany - Specialist for Semiconductor Solutions
• Diotec Semiconductor Germany - Specialist for Semiconductor Solutions

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