infineon IRFI4229PbF HEXFET Power MOSFET Owner’s Manual

infineon IRFI4229PbF HEXFET Power MOSFET

Product Information

• Product Name: IRFI4229PbF
• Package Type: TO-220 Full-Pak
• Key Parameters:
  • VDS max: 250V
  • VDS (Avalanche) typ.: 300V
  • RDS(ON) typ. @ 10V: 38mΩ
  • TJ max: 150°C

Features

• Advanced Process Technology

• Key Parameters Optimized for PDP Sustain,
  Energy Recovery and Pass Switch Applications

• Low EPULSE Rating to Reduce Power
  Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications

• Low QG for Fast Response

• High Repetitive Peak Current Capability for Reliable Operation

• Short Fall & Rise Times for Fast Switching

• 150°C Operating Junction Temperature for Improved Ruggedness

• Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

Key Parameters

VDS max| 250| V
VDS (Avalanche) typ.| 300| V
RDS(ON) typ. @ 10V| 38| mW
IRP max @ TC= 100°C| 32| A
TJ max| 150| °C

G| D|

S

---|---|---
Gate| Drain| Source

Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Base Part Number| Package Type| Standard Pack| Orderable Part Number
---|---|---|---
Form| Quantity
IRFI4229PbF| TO-220 Full-Pak| Tube| 50| IRFI4229PbF
Absolute Maximum Ratings

Symbol| Parameter| Max.| Units
VGS| Gate-to-Source Voltage| ± 30| V
ID @ TC = 25°C| Continuous Drain Current, VGS @ 10V| 19|

A

ID @ TC = 100°C| Continuous Drain Current, VGS @ 10V| 12
IDM| Pulsed Drain Current| 72
IRP @ TC = 100°C| Repetitive Peak Current| 32
PD @TC = 25°C| Maximum Power Dissipation| 46| W
PD @TC = 100°C| Maximum Power Dissipation| 18
| Linear Derating Factor| 0.37| W/°C
TJ

TSTG

| Operating Junction and

Storage Temperature Range

| -40 to + 150|

°C

| Soldering Temperature, for 10 seconds (1.6mm from case)| 300
| Mounting torque, 6-32 or M3 screw| 10 lbf•in (1.1N•m)|

Thermal Resistance

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

| Parameter| Min.| Typ.| Max.| Units| Conditions
---|---|---|---|---|---|---
V(BR)DSS| Drain-to-Source Breakdown Voltage| 250| –––| –––| V| VGS = 0V, ID = 250µA
DV(BR)DSS/DTJ| Breakdown Voltage Temp. Coefficient| –––| 340| –––| mV/°C| Reference to 25°C, ID = 1mA
RDS(on)| Static Drain-to-Source On-Resistance| –––| 38| 46| mW| VGS = 10V, ID = 11A
VGS(th)| Gate Threshold Voltage| 3.0| –––| 5.0| V| VDS = VGS, ID = 250µA
DVGS(th)/DTJ| Gate Threshold Voltage Temp. Coefficient| –––| -12| –––| mV/°C
IDSS| Drain-to-Source Leakage Current| –––| –––| 20| µA| VDS = 250V, VGS = 0V
–––| –––| 200| VDS = 250V,VGS = 0V,TJ =150°C
IGSS| Gate-to-Source Forward Leakage| –––| –––| 100| nA| VGS = 20V
Gate-to-Source Reverse Leakage| –––| –––| -100| VGS = -20V
gfs| Forward Trans conductance| 26| –––| –––| S| VDS = 25V, ID = 11A
Qg| Total Gate Charge| –––| 73| 110| nC| ID = 11A,VDS = 125V VGS = 10V
Qgd| Gate-to-Drain Charge| –––| 24| –––
td(on)| Turn-On Delay Time| –––| 18| –––| ****

ns

| VDD = 125V, VGS = 10V ID = 11A

RG= 2.4W

See Fig. 22

tr| Rise Time| –––| 17| –––
td(off)| Turn-Off Delay Time| –––| 32| –––
tf| Fall Time| –––| 13| –––
tst| Shoot Through Blocking Time| 100| –––| –––| ns| VDD = 200V,VGS = 15V,RG= 5.1W

EPULSE

| ****

Energy per Pulse

| –––| 770| –––| ****

µJ

| L = 220nH, C = 0.3µF, VGS = 15V VDD = 200V, RG= 5.1W, TJ = 25°C
–––| 1380| –––| L = 220nH, C = 0.3µF, VGS = 15V

VDD = 200V, RG= 5.1W, TJ = 100°C

Ciss| Input Capacitance| –––| 4480| –––| ****

pF

| VGS = 0V

VDS = 25V ƒ = 1.0MHz

Coss| Output Capacitance| –––| 400| –––
Crss| Reverse Transfer Capacitance| –––| 100| –––
Coss eff.| Effective Output Capacitance| –––| 270| –––| VGS = 0V, VDS = 0V to 200V
LD| Internal Drain Inductance| –––| 4.5| –––| ****

nH

| Between lead, 6mm (0.25in.) from package

and center of die contact

LS| Internal Source Inductance| –––| 7.5| –––

Avalanche Characteristics

| Parameter| Typ.| Max.| Units
---|---|---|---|---
EAS| Single Pulse Avalanche Energy| –––| 110| mJ
EAR| Repetitive Avalanche Energy| –––| 4.6
VDS(Avalanche)| Repetitive Avalanche Voltage| 300| –––| V
IAS| Avalanche Current| –––| 11| A

Diode Characteristics

| Parameter| Min.| Typ.| Max.| Units| Conditions
---|---|---|---|---|---|---
IS @ TC = 25°C| Continuous Source Current (Body Diode)| –––| –––| 18| ****

A

| MOSFET symbol showing the integral reverse

p-n junction diode.

ISM| Pulsed Source Current

(Body Diode)

| –––| –––| 72
VSD| Diode Forward Voltage| –––| –––| 1.3| V| TJ = 25°C,IS = 11A,VGS = 0V ƒ
trr| Reverse Recovery Time| –––| 120| 180| ns| TJ = 25°C ,IF = 11A, VDD = 50V

di/dt = 100A/µs ƒ

Qrr| Reverse Recovery Charge| –––| 540| 810| nC

Notes:

• Repetitive rating; pulse width limited by max. junction temperature.
• starting TJ = 25°C, L = 1.9mH, RG = 25, IAS = 11A.
• Pulse width 400μs; duty cycle 2%.
• Rθ is measured at TJ of approximately 90°C.
  Half sine wave with duty cycle = 0.25, ton=1μsec.

IRFI4229PbF

Fig. 1. Typical Output Characteristics

Fig. 2. Typical Output Characteristics

Fig. 3. Typical Transfer Characteristics

Fig. 4. Normalized On-Resistance vs. Temperature

Fig 5. Typical EPULSE vs. Drain-to-Source Voltage

Fig 6. Typical EPULSE vs. Drain Current

Fig. 7. Typical EPULSE vs. Temperature Fig 8. Typical Source-Drain Diode Forward Voltage

Fig 9. Typical Capacitance vs.Drain-to-Source Voltage

Fig 10. Typical Gate Charge vs. Gate-to-Source Voltage

Fig 11. Maximum Drain Current vs. Case Temperature

Fig 12. Maximum Safe Operating Area

Fig. 13. On-Resistance Vs. Gate Voltage

Fig. 14. Maximum Avalanche Energy Vs. Temperature

Fig. 15. Threshold Voltage vs. Temperature

Fig. 16. Typical Repetitive peak Current vs. Case temperature t1 , Rectangular Pulse Duration (sec)

Fig 17. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs

Fig 19a. Unclamped Inductive Test Circuit

Fig 19b. Unclamped Inductive Waveforms

Fig 20a. Gate Charge Test Circuit

Fig 20b. Gate Charge Waveform

Fig 21a. tst and EPULSE Test Circuit

Fig 21b. tst Test Waveforms

Fig 21c. EPULSE Test Waveforms

Fig 22a. Switching Time Test Circuit

Fig 22b. Switching Time Waveforms

NOTES: DIMENSIONING AND TOLERANCING AS PER ASME Y14.5 M- 1994.
DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. LEAD DIMENSION AND FINISH UNCONTROLLED IN L1.
DIMENSION D & E DO NOT INCLUDE MOLD FLASH. MOLD FLASH SHALL NOT EXCEED 005* (0.127) PER SIDE. THESE DIMENSIONS ARE MEASURED AT THE OUTER MOST EXTREMES OF THE PLASTIC BODY.
DIMENSION b1, b3, 65 & c1 APPLY TO BASE METAL ONLY. 16.d 7.0 STEP OPTIONAL ON PLASTIC BODY DEFINED BY DIMENSIONS u & CONTROLLING DIMENSION: INCHES.

LEAD ASSIGNMENTS HEXFET

1. GATE
2. DRAIN
3. SOURCE IGBTs,

Co PACK

1. GATE
2. COLLECTOR
3. EMITTER

TO-220 Full-Pak Part Marking Information

EXAMPLE: THIS IS AN IRFI840G WITH ASSEMBLY LOT CODE 3432 ASSEMBLED ON WW 24, 2001 IN THE ASSEMBLY LINE “K”
Note: “ P” in assembly line position indicates “LeadFree’

TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/

Qualification Information

Qualification Level| Industrial

(per JEDEC JESD47F) †

---|---
Moisture Sensitivity Level| TO-220 Full-Pak| N/A
RoHS Compliant| Yes

† Applicable version of JEDEC standard at the time of product release.

Revision History

All referenced product or service names and trademarks are the property of their respective owners.

IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications.

The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.

For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council.

WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

Edition 2016-04-19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG. All Rights Reserved.
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Email: erratum@infineon.com
Document reference
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References

• Semiconductor & System Solutions - Infineon Technologies
• Packaging - Infineon Technologies

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