DIODES EVB1 100W PFC+QR+GaN PD3.0 Adapter User Guide

June 10, 2024
DIODES

DIODES logo 100W PFC+QR+GaN PD3.0 Adapter
EVB1 User Guide

Summary

General Description

The 100W PD3.0 Evaluation Board (EVB1) is composed of four main controllers, AP33510, APR349, AP43771V and UCC28056B (TI). The AP33510, a highly integrated QuasiResonant (QR) controller with direct Enhancement-mode Gallium Nitride (E-Gann) driver integration, is optimally designed to meet ultra-low standby power and high power density (HPD) charger applications. The APR349, a secondary side synchronous rectifier (SR) controller, is adopted for efficiency optimization. The AP43771V, a PD3.0 PPS protocol controller, automatically manages the PD3.0 PPS attachment process for the attached USB Type C ® -equipped device under charge (DUC), regulates the feedback information of the charger to fulfill voltage and current requirements from DUC. By adopting growing popularity of E-Gann FETs, the 100W EVB1 exemplifies HPD charger design with system BOM optimization to meet market trend.

Key Features

1.2.1 System Key Features

  • Quasi-Resonant operation for Critical E-GaN switch Operation and Efficiency Improvement Approaches
  • Cost-Effective Implementation for HPD Chargers
  • High-Voltage Startup low standby power (<20mW)
  • Meets DOE VI and COC Tier 2 Efficiency Requirements
  • USB Type-C Port – Support the Maximum Output of 100W PD3.0 PPS (3.3V to 21V@20mV/step, 50mA/step)
  • SSR Topology Implementation with an Opto-coupler for Accurate Step Voltage / Current Control
  • Low overall system BOM cost

1.2.2 AP33510 Key Features

  • QR Fullback Topology with Valley-on and Valley lock
  • High-Voltage Startup
  • Embedded VCC LDO for VCCIN pin to Guarantee Wide Range Output Voltage
  • Integration of Accurate E-Gann direct-driver
  • Low Constant Output Current for Output Short
  • Non-Audible-Noise QR Control
  • Soft Start During Startup Process
  • Frequency Foldback for High Average Efficiency
  • Secondary Winding Short Protection with FOCP
  • Frequency Dithering for Reducing EMI
  • Integration of X-CAP Discharge Function
  • Useful Pin fault protection: SENSE Pin Floating Protection/FB/Opto-Coupler Open/Short Protection
  • Comprehensive System Protection Feature: VOVP/OLP/BNO/SOVP/SUVP

1.2.3 APR349 Key Features

  • SR Works with CCM / DCM / QR operation modes
  • Eliminate Resonant Ringing Interference
  • Fewest External Components used

1.2.4 AP43771V Key Feature

  • Support USB PD Rev 3.0 V1.2
  • USB-IF PD3.0/PPS Certified TID 4312
  • Qualcomm® Quick Charge™ 5 Certified: QC20201127203
  • MTP for System Configuration
  • OTP for Main Firmware
  • Operating Voltage Range: 3.3V to 21V
  • Built-In Regulator for CV and CC Control
  • Programmable OVP/UVP/OCP/OTP
  • Support Power Saving Mode
  • External N-MOSFET Control for VBUS Power Delivery
  • Supports E-Marker Cable Detection
  • QFN-14 and QFN-24

1.3 Applications

  • Quick Charger with PD3.0

1.4 Main Power Specifications

Parameter Value
Input Voltage 90VAC to 264VAC
Input standby power < 50mW@230VAC/50Hz
Main Output (Vo / Io) PDO: 5V/3A, 9V/3A, 15V/3A, 20V/5A,
Efficiency Comply with CoC version 5 tier-2
Total Output Power 100W (at PDO 20V/3.25A)
Protections OCP, OVP, UVP, OLP, OTP, SCP
Dimensions PCB: 60 55 25 mm3,

2.362” 2.165” 0.984” inch3
Power Density Index| 1.25 W/CC; 20.48 W/CI

1.5 Evaluation Board Pictures

DIODES EVB1 100W PFC QR GAN PD30 Adapter

Power Supply Specification

Specification and Test Results
Parameter Value Test Summary
Input Voltage / Frequency 90VAC to 264VAC / 50Hz or 60Hz Test Condition
Input Current <2ARMS
Standby Power < 50mW, load disconnected PASS, 45mW@230VAC/50Hz
5V/3A Average Efficiency Choc Version 5, Tier-2 Efficiency >81.84%

PASS, 91.88@115VAC/60Hz 89.74@230VAC/50Hz
5V/0.3A Efficiency (10% Load)| CoCr Version 5, Tier2 Efficiency >72.48%| PASS, 89.77@115VAC/60Hz 85.70@230VAC/50Hz
9V/3A Average Efficiency| CoCr Version 5,Tier2 Efficiency >87.30%| PASS, 92.93@115VAC/60Hz 91.94@230VAC/50Hz
9V/0.3A Efficiency (10% Load)| CoCr Version 5,Tier2 Efficiency >77.30%| PASS, 91.19@115VAC/60Hz 87.98@230VAC/50Hz
15V/3A Average Efficiency| CoCr Version 5,Tier2 Efficiency >88.85%| PASS, 92.94@115VAC/60Hz 92.62@230VAC/50Hz
15V/0.3A Efficiency (10% Load)| Choc Version 5,Tier2 Efficiency >78.85%| PASS, 90.06@115VAC/60Hz 87.48@230VAC/50Hz
20V/5A Average Efficiency| Choc Version 5,Tier2 Efficiency >89%| PASS, 92.69@115VAC/60Hz 93.43@230VAC/50Hz
20V/0.5A Efficiency (10% Load)| CoCr Version 5,Tier2 Efficiency >79%| PASS, 91.09@115VAC/60Hz 89.80@230VAC/50Hz
Output Voltage Regulation Tolerance| +/- 5%| PASS,

Compliance

Parameter| Test conditions| Low to High| High to Low| standard| Test Summary
---|---|---|---|---|---
Output Voltage Transition time| 5V/3A to 9V/3A, 90Vac/60Hz| 59.91ms| 60.44ms| 275ms <| Pass
5V/3A to 9V/3A, 264Vac/50Hz| 59.61ms| 66.24ms| Pass
9V/3A to 15V/3A, 90Vac/60Hz| 76.88ms| 78.60ms| Pass
9V/3A to 15V/3A, 2640Vac/50Hz| 79.62ms| 81.15ms| Pass
15V/3A to 20V/3A, 90Vac/60Hz| 66.95ms| 61.62ms| Pass
15V/3A to 20V/3A, 264Vac/50Hz| 63.36ms| 68.73ms| Pass
USB Type-C *1-| | |
90Vac , Full Load| | |
Output Connector| L46mm x 46mm x 22mm (with foldable AC pin)

Schematic

Board Schematic

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig

Bill of Material (BOM)
Item Quantity Reference Description Manufacturer
1 1 U1 APR349 Diodes Incorporated (Diodes)
2 1 U2 AP43771 Diodes
3 1 U3 UCC28056B TI
4 1 U4 AP35510 Diodes
5 1 TPYE-C TYPE-C
6 1 R8 30K 0603_R fenghua
7 3 R7, R9, R53 39R 1206_R fenghua
8 1 R55 2R 0805_R fenghua
9 1 R51 15K 0603_R fenghua
10 1 R49 220K 0603_R fenghua
11 1 R48 BEAD 0805_R muRata(村田)
12 1 R47 1.6K 0402_R fenghua
13 1 R46 300R 0603_R fenghua
14 1 R44 100R 0402_R fenghua
15 1 R42 2k 0402_R fenghua
16 1 R41 61.9k 0603_R fenghua
17 3 R4, R5, R6 3M1206_R fenghua
18 3 R38, R39, R40 0.56R 1206_R fenghua
19 1 R37 470K 0402_R fenghua
20 2 R35, R43 180K 0603_R fenghua
21 1 R33 1K 0805_R fenghua
22 1 R32 750K 0603_R fenghua
23 3 R30, R45, R50 4.7K 0402_R fenghua
24 2 R3, R24 10R 0805_R fenghua
25 4 R28, R29, R31, R36 20R 0402_R fenghua
26 1 R27 10K 0603_R fenghua
27 1 R26 82K 0603_R fenghua
28 1 R25 300K 0603_R fenghua
29 1 R23 15R 0603_R fenghua
30 1 R22 3M6 1206_R fenghua
31 1 R21 3M 1206_R fenghua
32 1 R20 2M7 1206_R fenghua
33 1 R2 330K 1206_R fenghua
34 1 R19 33K 0603_R fenghua
35 2 R17, R18 20K 1206_R fenghua
36 2 R15, R16, R14 0.33R 1206_R fenghua
37 1 R13 22K 1206_R fenghua
38 1 R11 20R 0805_R fenghua
39 2 R10, R34 2.2R 0603_R fenghua
40 1 R1 10mR 1206_R YAGE
41 2 Q5, Q6 2N7002 SOT23_B Diodes
--- --- --- --- ---
42 1 Q4 INN650D260A DFN8*8 InnoScience
43 1 Q3 DMT10H045 DFN5*6 Diodes
44 1 Q2 TP65H300G4LSG Transport
45 1 Q1 TH43M8LS DFN5*6 Diodes
46 1 L6 20uHRING_D9.8 SANCI
47 1 L5 40mHEMC_14*8.5 SQ1010 SANCI
48 1 L4 150uHRING_D9.8 SANCI
49 1 L3 320uH ATQ2516
50 1 L2 200uH ATQ2315
51 1 L1 100uHLS_D10 SANCI
52 2 IC1, IC2 HK1010HCU Liteon
53 1 F1 Fuse 3.15A_250V JDTfuse
54 1 D8 20V_1/2W_MINI-MELF SOD_123_B Diodes
55 1 D9 10V_1/2W_MINI-MELF SOD_123_B Diodes
56 1 D6 RS1M SMA Diodes
57 2 D4, D7 1N4148 SOD-123(W) Diodes
58 2 D3, D5 S1M SMA Diodes
59 1 D2 DTH8L06DNC TO-252 Diodes
60 2 D10, D15 RS1M_1A_1KV_500NS_SMA Diodes
61 1 D1 S8KCD Diodes
62 1 CY1 1nF TRX
63 1 CX1 220nF/X2 SRD
64 1 CE4 10uF/100V ELECTRO2 AISHI
65 2 CE1, CE2 470uF/25V ELECTRO2 AISHI
66 1 C8 3.9nF CAP Morata
67 1 C7 33μF_±20%_450V_18*25 NCC
68 2 C5, C6 22μF_±20%_450V_12.5*25 NCC
69 2 C4, C9 CBB21L_474K/450V_10mm JOEY
70 1 C33 10uF/35V 0805CAP AISHI
71 2 C31, C32 NC0402_R
72 1 C30 NC0603_R
73 1 C3 10pF/1KV1206R SAMSUNG
74 1 C29 100pF0603_R miraa
75 1 C28 1.2nF0805_R Morata
76 1 C27 4.7uF0805_R Morata
77 1 C26 10nF0402_R muRata
78 1 C25 10uf0805_R SAMSUNG
79 1 C24 220pF0805_R Morata
80 1 C23 0.1uF0402_R muRata
--- --- --- --- ---
81 1 C22 2.7nF0402_R Morata
82 1 C21 2.2nF0603_R Morata
83 1 C2 1nF0805_R muRata
84 2 C19, C34 2.2uF/25V0805_R SAMSUNG
85 4 C16, C17, C18, C20 220pF0402_R muRata
86 1 C15 33nF0805_R muRata
87 1 C14 1uF0805_R muRata
88 1 C13 1uF/50V1206_R muRata
89 1 C12 22pF/1KV1206_R SAMSUNG
90 1 C11 3.3uF0603_R SAMSUNG
91 1 C10 0.1uF0603_R muRata
92 1 C1 2nF/1KV1206R SAMSUNG
93 2 BEAD, R12 10R0603_R muRata
94 2 BD1, BD2 WRLS80BD WRL
Transformer Design

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 2

Windings| Wire Gauge| Turns| Start Pin| End Pin| Tape
---|---|---|---|---|---
Np1| Φ0.1 2UEW20P| 21| 1| 8| 2T
Na1| 0.12 2UEW| 4| 5| 4| 2T
Na2| Φ0.12 2UEW
4P| 12| 3| 4| 2T
Ns| Φ0.30 TEX-E7P| 5| F+| F-| 2T
Shield| Φ0.14 2UEW
2P| 22| 4| NC| 2T
Np2| Φ0.1 2UEW*20P| 11| 8| 2| 2T
| | | | |
BOBBIN PIN Define:

Item| Test Condition| Rating
Primary Inductance| Pin1-2,all other windings open, measured at 100kHz / 1V| 390uH+/- 5%
**** Note| Bobbin:
ATQ2516 Core
ATQ2516|

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 4

Windings Wire Gauge Turns Start Pin End Pin Tape
Np Φ0.15 2UEW*20P 29 1 2 2T

BOBBIN PIN Define:

Item| Test Condition| Rating
Primary Inductance| Pin1-2,all other windings open, measured at 100kHz / 1V| 200uH+/- 5%
Note| Bobbin:
ATQ2315 Core
ATQ2315|

3.4 Schematics Description
3.4.1 AC Input Circuit & Differential Filter
The Fuse F1 protects against over-current conditions which occur when some main components fails. The L4 and L5 are common-mode chocks for the common mode  noise suppression. The BD1 and BD2 are bridge rectifier which converts alternating current and voltage into direct current and voltage. The C4, C9, L1 are composed of the  Pi filter for filtering the differential switching noise back to AC source.

3.4.2 AP33510 PWM Controller
AP33510, a highly integrated Quasi-Resonant Fullback (QR) controller, integrates high-voltage start-up function through HV pin and X-capacitor discharging function. It also  integrates a VCC LDO circuit, which allows the LDO to regulate the wide range VCCL to an acceptable value. This makes the AP33510 an ideal candidate for wide range  output voltage applications such as USB PD3.0 PPS. With embedded E-Gann drive, the AP33510 provides a safe and accurate gate signal to control switch Q4 (GaN FET)  operations and achieve high-power density charger applications. At no load or light load, the AP33510 enters the burst mode to minimize standby power consumption.

3.4.3 APR349 Synchronous Rectification (SR) MOSFET Driver
As a high performance solution, the APR349 is a secondary-side SR controller to effectively reduce the secondary side rectifier power dissipation which works in both QR/DCM/CCM operation.

3.4.4 AP43771V PD 3.0 Decoder & Protection on/off N MOSFET and Interface to Power Devices
Few important pins provide critical protocol decoding and regulation functions in AP43771V:

  1. CC1 & CC2 (Pin 11, 10): CC1 & CC2 (Configuration Channel 1 & 2) are defined by USB Type-C spec to provide the channel communication link between power source and sink device.
  2. Constant Voltage (CV): The CV is implemented by sensing VFB (pin 8) and comparing with internal reference voltage to generate a CV compensation signal on the  OCDRV pin (pin 5). The output voltage is controlled by firmware through CC1/CC2 channel communication with the sink device.
  3. Constant Current (CC): The CC is implemented by sensing the current sense resistor (RCS, 10mΩ, 1%, Low TCR) and compared with internal programmable reference  voltage. The output current is controlled by firmware through CC1/CC2 channel communication with the sink device.
  4. Loop Compensation: R19 & C19 form the voltage loop compensation circuit, and C18 form the current loop compensation circuit.
  5. OCDRV (Pin5): It is the key interface link from secondary decoder (AP43771V) to primary regulation circuit (AP33510). It is connected to Opto-coupler PC1 Pin 2  (Cathode) for feedback information based on all sensed CC1 & CC2 signals for getting desired Vbus voltage & current.
  6. PWR_EN (Pin2) to N-MOSFET Gate: The pin is used to turn on/off N-MOSFET (Q1) to enable/disable voltage output to the Bus.

The Evaluation Board (EVB) Connections

4.1 EVB PCB Layout
Main Board – 1

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 6

Daughter Board

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 7

4.2 Quick Start Guide before Connection

  1. Before starting the 100W EVB test, the end user needs to prepare the following tool, software and manuals.
    For details, please consult USBCEE sales through below link for further information.
    USBCEE PD3.0 Test Kit: USBCEE Power Adapter Tester. https://www.usbcee.com /product-details/4
USBCEE PAT Tester GUI Display USB-A to Micro-B Cable Type-C Cable

Figure 6. Test Kit / Test Cables

  1. Prepare a certified three-foot USB Type-C® cable and a Standard-A to Micro-B Cable.
  2. Connect the AC inputs: L & N wires of EVB to AC power supply output “L and N “wires.
  3. Ensure that the AC source is switched OFF or disconnected before the connection steps.
  4. A type-C cable for the connection between EVB’s and Type-C receptacles of test kit.
  5. Output of Type-C port & USB A-port are connected to E-load + & – terminals by cables.

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 12

Connection with E-Load

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 13

Testing the Evaluation Board

5.1 Input & Output Characteristics
5.1.1 Input Standby Power

Vin(Vac) F(Hz) Pin(mW)
90 60 21.5
115 60 23.9
230 50 45
264 50 55

5.1.2 Multiple Output Full Load Efficiency at Different AC Line Input Voltage

PDO Mode| Vin(Vac)| F(Hz)| Vought Board(V)| I out (A)| Pin(W)| Pout(W)| Eff(%)
---|---|---|---|---|---|---|---
20V/5A| 90| 60| 20.38| 4.996| 110.85| 101.82| 91.85%
115| 60| 20.38| 4.996| 109.86| 101.82| 92.68%
230| 50| 20.38| 4.996| 108.53| 101.82| 93.82%
264| 50| 20.38| 4.996| 108.35| 101.82| 93.97%
15V/3A| 90| 60| 15.21| 3.002| 49.95| 45.66| 91.41%
115| 60| 15.21| 3.002| 49.15| 45.66| 92.90%
230| 50| 15.21| 3.002| 48.69| 45.66| 93.78%
264| 50| 15.21| 3.002| 48.92| 45.66| 93.34%
9V/3A| 90| 60| 9.17| 3.002| 29.93| 27.53| 91.98%
115| 60| 9.17| 3.002| 29.62| 27.53| 92.94%
230| 50| 9.17| 3.002| 29.64| 27.53| 92.88%
264| 50| 9.17| 3.002| 29.86| 27.53| 92.19%
5V/3A| 90| 60| 5.15| 3.003| 16.99| 15.47| 91.03%
115| 60| 5.15| 3.003| 16.88| 15.47| 91.62%
230| 50| 5.15| 3.003| 17.08| 15.47| 90.55%
264| 50| 5.15| 3.003| 17.13| 15.47| 90.28%

Efficiency vs AC Line At Board End

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 14

5.1.3 Multiple Output Average Efficiency at Different Loading Port-C PD3.0_PDO_20V / 5V Average Efficiency

Vin Load % Pin1 Vought I out Pout Effie. Avg. Effie.
(Vrms) (W) (V) (A) (W) (%) (%)

115 Vac| 100%| 109.86| 20.38| 4.996| 101.82| 92.68%| ****


92.69%

75%| 82.45| 20.29| 3.75| 76.09| 92.28%
50%| 54.58| 20.22| 2.51| 50.75| 92.99%
25%| 27.14| 20.15| 1.25| 25.19| 92.81%
230 Vac| 100%| 108.53| 20.38| 4.996| 101.82| 93.82%| ****


93.43%

75%| 81.31| 20.29| 3.75| 76.09| 93.58%
50%| 54.08| 20.22| 2.51| 50.75| 93.85%
25%| 27.25| 20.16| 1.25| 25.20| 92.48%
115 Vac| 100%| 16.88| 5.15| 3.003| 15.47| 91.62%| 91.88%
75%| 12.51| 5.11| 2.258| 11.54| 92.23%
50%| 8.26| 5.06| 1.502| 7.60| 92.01%
25%| 4.14| 5.02| 0.756| 3.80| 91.67%
230 Vac| 100%| 17.08| 5.15| 3.003| 15.47| 90.55%| 89.74%
75%| 12.72| 5.11| 2.258| 11.54| 90.71%
50%| 8.44| 5.06| 1.502| 7.60| 90.05%
25%| 4.33| 5.02| 0.756| 3.80| 87.65%

Port-C PD3.0_PDO_9V / 15V Average Efficiency

Vin Load % Pin1 Out Out Pout Effie. Avg. Effie.
(Vrms) (W) (V) (A) (W) (%) (%)
--- --- --- --- --- --- --- ---
115n Vac 100% 29.62 9.17 3.002 27.53 92.94% 92.93%
75% 22.16 9.13 2.258 20.62 93.03%
50% 14.66 9.08 1.502 13.64 93.03%
25% 7.37 9.04 0.756 6.83 92.73%
230 Vac 100% 29.64 9.17 3.002 27.53 92.88% 91.94%
75% 22.3 9.13 2.258 20.62 92.45%
50% 14.87 9.09 1.502 13.65 91.82%
25% 7.54 9.04 0.756 6.83 90.64%
115 Vac 100% 49.15 15.21 3.002 45.66 92.90% 92.94%
75% 36.71 15.17 2.258 34.25 93.31%
50% 24.41 15.13 1.502 22.73 93.10%
25% 12.33 15.08 0.756 11.40 92.46%
230 Vac 100% 48.69 15.21 3.002 45.66 93.78% 92.62%
75% 36.77 15.17 2.258 34.25 93.16%
50% 24.57 15.13 1.502 22.73 92.49%
25% 12.52 15.08 0.756 11.40 91.06%

5.2 Key Performance Waveforms
5.2.1 100W PD3.0 System Start-up Time

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 15

5.2.2 Q1 / Q2 MOSFET Voltage Stress at Full Load @264Vac
Primary side MOSFET : Q1 and Secondary side SR MOSFET- Q2

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 16

Component| Vout| Vds| Vds_Max_Spec| Ratio of voltage stress
---|---|---|---|---
Q1| 20V| 598V| 650V| 92%
Q2| 91.9V| 100V| 91.9%

5.2.3 System Output Ripple & Noise with the Cable
Connect 47uF AL Cap and 104MLCC to the cable output unit in parallel

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 17DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig
18

5.2.4 Dynamic load —-10% Load~90% Load, T=5mS, Rate=100mA/uS (PCB End)

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 19

| Vo Undershoot(V)| Vo Overshoot(V)| | Vo_Undershoot(V)| Vo_Overshoot(V)
---|---|---|---|---|---
Vin=90Vac@5V| 4.42| 5.18| Vin=90Vac@9V| 8.37| 9.30
Vin=264Vac@5V| 4.38| 5.18| Vin=264Vac@9V| 8.43| 9.29

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 20

| Vo_ Undershoot(V)| Vo_ Overshoot(V)| | Vo_Undershoot(V)| Vo_Overshoot(V)
---|---|---|---|---|---
Vin=90Vac@15V| 14.30| 15.7| Vin=90Vac@20V| 18.8| 20.80
Vin=264Vac@15V| 14.30| 15.6| Vin=264Vac@20V| 18.8| 20.70

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 21

Output Voltage Transition Time from High to Low

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 22

5.2.7 Thermal Testing
Output Condition : 20V/3.25A

Main Voltage Temperature (°C)
BD1 Q4
90Vac/60Hz 107.6
264Vac/60Hz 69.6

DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig 23

BD1: Bridge Rectifier
Q4 : Primary Side High Voltage GaN FET
Q3 : Secondary Side Sync-Rectifier
Q2 : APFC High Voltage GaN FET
U1 : AP33510, QR Controller
U4 : APR349, Sync-Rectifier Controller

Note: Component temperature can be further optimized with various system design and thermal management approaches by manufacturers.

5.3 EMI (Conduction) Testing
115Vac testing results
Output Condition : 20V/5ADIODES EVB1 100W PFC QR GAN PD30 Adapter - fig
24

230Vac testing results
Output Condition : 20V/5ADIODES EVB1 100W PFC QR GAN PD30 Adapter - fig
25DIODES EVB1 100W PFC QR GAN PD30 Adapter - fig
26

IMPORTANT NOTICE

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  3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein wi ll assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities.
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  5. Diodes’ products are provided subject to Diodes’ Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatso ever in respect of any products purchased through unauthorized sales channel.
  6. Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa le is prohibited under any applicable laws and regulations. Should customers or users use Diodes’ products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.
  7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising f rom any such unauthorized use.
  8. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-andconditions/important-notice

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.
All other trademarks are the property of their respective owners.
© 2023 Diodes Incorporated. All Rights Reserved.
www.diodes.co
100W PFC+QR+GaN PD3.0 PPS Adapter EVB1
Page 28 of 28 03/9/2023
Rev 1
www.diodes.com

References

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