ABB SEMIS Simulation Tool Isolated DC-DC Converter User Manual
- June 8, 2024
- ABB
Table of Contents
- ABB SEMIS Simulation Tool Isolated DC-DC Converter
- INTRODUCTION
- ISOLATED DC-DC CONVERTER MODELS
- OVERVIEW
- SIMULATION SETTINGS
- SIMULATION RESULTS
- ALERTS & FEATURES
- APPLIED CALCULATIONS
- VALIDATION OF PLECS RESULTS WITH PSCAD
- USER MANUAL REVISION HISTORY
- SIMULATION SOFTWARE RELEASE HISTORY
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
ABB SEMIS Simulation Tool Isolated DC-DC Converter
INTRODUCTION
SEMIS is a web-based semiconductor simulation tool providing a thermal
calculation of the semiconductor losses for common converter circuits. The
simulation simplifies significantly the selection of the switching de-vice and
enables the optimal selection of semiconductors for further investigations.
The SEMIS Simulation Tool is a user-friendly online application found on ABB
Semiconductors website www.abb.com/semi-conductors/semis
SEMIS users select from a substantial selection of topologies. By assigning
the circuit parameters and selecting the desired switching device, multiple
ABB products can be simulated at the same time. Once a simulation is run,
SEMIS returns comprehensive results on semiconductor losses as well as on the
electrical parameters in the input and output of the circuit. The results are
shown in both graphical (waveforms) and numerical (tables) way. The SEMIS tool
is based on the PLECS simulation software. PLECS users can download our
product models in the XML file format from the ABB Semiconductors website and
use them for their simulations. For more specific topologies ABB offers
customized converter simulations for non-standard topologies with PLECS
simulation software on a project basis.
COPYRIGHTS
All rights to copyrights, registered trademarks, and trademarks reside with
their respective owners.
Copyright © 2020 ABB Power Grids Switzerland Ltd.
All rights reserved.
Release: April 2020
Document number: 5SYA 2134
ISOLATED DC-DC CONVERTER MODELS
Isolated DC-DC converters are used to generate regulated DC output voltage
with electrical isolation from the input supply. Linear supplies are commonly
larger in size with 50-60Hz transformers in comparison to DC-DC converters
with high frequency (HF) transformers. The overall efficiency of linear power
supplies is usually of the range 30-60%, both these shortcomings are addressed
by Isolated DC-DC converters.
ABB offers the following Isolated DC-DC converters for thermal analysis
simulation in Isolated DC-DC converters 2:
- Isolated Push-pull converter
- Isolated Half-bridge converter
- Isolated full-bridge converter
Furthermore, ABB offers the following DC-DC converters for thermal analysis simulation:
- Non-Isolated Buck converter (Uout < Uin)
- Non-Isolated Boost converter (Uout > Uin)
- Non-Isolated Buck-Boost converter (Uout <> Uin)
- Isolated Fly back converter (Derived from Buck-Boost converter)
- Isolated Forward converter (Derived from step-down converter)
OVERVIEW
Page layout of Non-Isolated DC-DC Converters in the ABB semiconductors website.
SIMULATION SETTINGS
Circuit parameters
Converter settings
The user can choose between the 3 types of converters here. All three of them
can be used for step-up and step-down operations as the user can set the
number of turns of the transformer. However, the user shall choose the
input/output voltages, number of turns such that the duty ratio is less than
0.5. These converters are modeled to operate in Continuous Conduction Mode
(CCM), one shall change the user inputs Converter settings input blocks
Coverter settings input blocks to operate the converters in CCM. An assertion
has been set-up to let the user know when the converters fall into
Discontinuous Conduction Mode (DCM).
CONVERTER TYPE | Converter is operated as Push-pull/Half-Bridge/FB | Selection |
---|---|---|
DC VOLTAGE INPUT | DC input voltage given by the user. Generally, this is the | |
output of AC-DC converter | Range 10 .. 4500 V | |
AMBIENT TEMPERATURE | Definition of environmental temperature around the | |
converter for temperature / cooling calculations | Range -25 .. 90 °C | |
OUTPUT POWER | Power demand of the load | Range 1 .. 150 kW |
OUTPUT DC VOLTAGE§ | The constant DC output voltage on the load | Range 30 .. |
1000V
SWITCHING FREQUENCY| Frequency at which the IGBT is turned ON/OFF| Range 200
.. 5000 Hz
TRANSFORMER PRIMARY TURNS (N1)| No of primary turns| Range 1 .. 30
TRANSFORMER SECONDARY TURNS (N2)| No of secondary turns| Range 1 .. 30
Device settings
Thermal settings and device selection
HEAT SINK THERMAL RESISTANCE
Range 0.0001 .. 0.5 K/W
Definition of thermal resistance of the cooling system applied.
Remark: The value entered is attributed to each individual switch is
shown in the electrical configuration schematic of the IGBT module datasheet.
Therefore, if a user selects a dual switch module, the Rth should be
multiplied with a factor of 2 to differentiate from the single switch case, if
the same heatsink would be used in both cases.
The selected Rth is also accounted for the diode position for which the same
consideration applies for its electrical configuration.
IGBT MODULE TYPE Select housing type of IGBT for filtering Selection
IGBT/DIODE SELECTION Select voltage class of IGBT for filtering Selection
MODULE CONFIGURATION Select topology of IGBT module for filtering Selection
Matching Devices
Once the previous IGBT and Diode properties are selected the matching IGBT and
Diode options appear. By clicking on the product code name the user may access
the datasheet from the ABB website.
Matching IGBTs and Diodes for selection
Users can select the desired IGBTs and Diodes product names for simulation.
Up to 4 elements can be selected simultaneously and simulated. If one or more
elements produce results exceeding the safe operating area (SOA) then they
will return no results. In this case, the user should run the simulation again
with changed parameters and/or product selection to enable results within SOA
operating conditions.
Selection of articles / Start simulation
To simulate one or more articles, select from the list by activating the
checkbox
Simulate
Starts the simulation The progress of the simulation is shown with the number
of calculated Jacobians.
Abort
Stops the simulation; No results generated
Hold results
To compare multiple simulations, results can be held for later viewing By
selecting the button, results are held after the simulation has finalized for
later comparison with succeeding simulations Start of simulation Calculate
Jacobian: 7/15
Simulation progress and termination
SIMULATION RESULTS
The simulation results are displayed in two different ways for all selected
articles simulated.
To hide curves of selected articles, unselect in the table “Results History”
Graphical results Visual analysis of waveforms for fast and efficient
detection of most significant sources
Numerical results Numeric indication of all simulations values for direct
comparison
Graphical Output – Waveforms
When the simulation finishes the semiconductor and DC side waveforms are appearing as follows:Graphical results of Half-bridge converter
Control
For an indication of values within the graph, a cursor can be activated to
show curve values in a table. Sections of graphs can be zoomed in by click,
move and release mouse button for more details Parameters values
indication
Tabular indication of graphical waveforms values according to cursor position
selected. Values are indicated for each parameter Color of the waveform is
indicated. The third column shows the difference between the two cursors per
parameter.
Remark:
The numerical values of Phase Voltage/Current at the position of respective
cursors are shown in the Table. Tabular indication of cursor
position graph values
Remark:
The numerical values of Voltage/Current at the position of respective cursors
are shown in the Table. The numer-ical values of IGBT current/Diode Current
along with their Switching loss, Conduction loss and Junction temperatures at
the position of respective cursors are shown in the Table.
Numerical / Tabular results
The following parameters are given in a tabular format in multiple sections.
All calculations and simulation results are based on datasheet typical values.
All types of semiconductor losses are calculated according to the PLEXIM PLECS
software principle through the reference of the lookup table and linear
interpolation of the actual device current, voltage and junction temperature.
As converter losses, the aggregated losses in all devices are accounted for.
The losses per device are tabulated, the combined losses are calculated by
multiplying the losses per device with the number of devices at the back-end
as the all the IGBTs carry the same current and block the same voltage, same
with the diodes.
Device Losses & Temperatures Device Losses & Temperatures
Switching Loss Single IGBT or Diode Losses during turn on and turn off events
(dynamic)
Conduction loss Single IGBT or Diode Losses during on state (static)
Combined losses Sum of single IGBT or Diode switching and conduction loss.
Converter losses Sum of all IGBT and Diode losses
% Losses Defined as the (%) ratio of calculated combined converter losses
with respect to the total output power and losses i.e., total apparent power
flow.
Junction Temperature Avg
Junction temperature average during the simulation period
Junction Temperature Max
Maximum junction temperature during the simulation period
Junction Temperature BLS
Junction temperature at the time point just before the switching, after which
the maximum junction temperature is achievedDefinition of Tvj
before the last switch
Converter DC-DC Parameters
DC-DC parameters
Input DC power
Active power supplied by the source including the thermal losses
Output DC power
Load power set by the user as explained in section 3.1.1
Input DC voltage
DC voltage supplied at the input of the converter (Usually the output of a
rectifier)
Output DC voltage
DC voltage output set by the user as explained in section 3.1.1.
DC Current
DC current as drawn by the load at the power set by the user.
Duty ratio
Duty ratio is calculated and displayed as per section 6.
General parameters
General Parameters
Switching Freq.
According to the definition
Ambient Temp.
According to the definition
ALERTS & FEATURES
The system verifies results and generated warning messages in case of limits are violated.
Parameter
Junction temperature
Verification
If the average junction temperature of IGBT and/or diode is above its maximum
junction temperature limit, the alert message is displayed
Warning message
IGBT temperature out of the safe operating area
Parameter
DC Blocking voltage
Verification
If the voltage rating of the IGBT and/or diode is less than the DC blocking
voltage, the alert message is displayed
Warning message
For the selected device voltage rating, the operating range of the device is
dis-played
Parameter
Duty ratio
Verification
Range of Duty ratio is 0 .. 0.5. If the duty ratio is out of these limits the
alert message is displayed
Warning message(s)
The maximum duty ratio cannot exceed 0.5 for the Half-Bridge DC-DC converter.
Please check your input voltage, output voltage and turns ratio
APPLIED CALCULATIONS
Input Parameter Definitions
VDC
Input DC voltage
VOUT
Output DC voltage
N2
Transformer secondary turns
N1
Transformer primary turns
Duty ratio of the converter
The following calculations have been used in the model to calculate the duty
ratio:
Push-Pull (PP), Full Bridge (FB)
Half Bridge (HB)
Load side
The resistive load is formulated based on the following equations for each of
the converters:
POUT
DC power / real power at the load
D
Duty cycle as per section 6.2
Rout
Resistive load of the converter
n
Turns ratio (N2/N1)
Push-Pull (PP), Full Bridge (FB) Half Bridge (HB)
VALIDATION OF PLECS RESULTS WITH PSCAD
To ensure supplied simulation results are reliable, each of the Isolated DC-DC
converter models (Push pull, Half-bridge, Full-bridge) is validated with
another simulation platform or compared to real measurement data. The circuit
topology is reconstructed in PSCAD to validate the results obtained from the
SEMIS web simulation tool. The objective of the work is to develop an open-
loop, Push-Pull, Half-Bridge and Full-Bridge converter models with loss and
temperature estimation in PSCAD and to validate the steady-state results
obtained through SEMIS simulation model using pulse-width modulation. The IGBT
and Diode XML data which was created from the device datasheets for SEMIS
simulations is modified to individual .txt files for switch turn-on energy
(Eon), switch turn-off energy (E off), diode reverse recovery energy (Erec),
the on-state voltage drop of IGBT (Vt), and on state voltage drop of the diode
(Vd) at different temperatures, to make the data readable in PSCAD. The PSCAD
and SEMIS circuit models are made as identical as possible to prevent any
errors in validation due to the dissimilarities. Junction to Case and Case to
Heat sink thermal resistances for the IGBT and Diode have been captured from
the device datasheet while the Heat sink to ambient thermal resistance
Rth(h-a) is assumed as 2K/kW with different ambient temperatures.
Five cases are simulated in PSCAD and SEMIS by varying different parameters
like DC Voltage, Switching Frequency, Load Power, Heat Sink, etc. with the
electrical parameters presented in the tables below for comparison.Validation results from comparison Full-Bridge Isolated DC-DC
Converter
Validation of Plecs Results with PSCA Validation results from
comparison Push-pull Isolated DC-DC Converter
Validation results from comparison Half-
Bridge Isolated DC-DC Converter
USER MANUAL REVISION HISTORY
Rev. | Page | Change Description | Date / Initial |
---|---|---|---|
1.0 | all | Initial version new design | 2019-12-06 PGGI/SD |
SIMULATION SOFTWARE RELEASE HISTORY
Rev. | New topic | Fixed defects | Tvj influence | Date |
---|---|---|---|---|
1.0 | Initial version | – | – | 2019-12-06 PGGI/SD |
Contact
ABB Power Grids Switzerland Ltd.
Semiconductors
Fabrikstrasse 3
5600 Lenzburg, Switzerland
Phone: +41 58 586 1419
Fax: +41 58 586 1306
E-Mail: abbsem@ch.abb.com
abb.com/semiconductors
Note
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document without prior notice. With regard to purchase orders, the agreed
particulars shall prevail. ABB does not accept any responsibility whatsoever
for potential errors or possible lack of information in this document. We
reserve all rights in this document in the
subject matter and illustrations contained therein. Any reproduction- in whole
or in parts- is forbidden without ABB’s prior written consent.
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