onsemi NTMFS5C460NL Power MOSFET Instruction Manual

onsemi NTMFS5C460NL Power MOSFET

Power MOSFET
40 V, 4.5 mΩ, 78 A, Single N−Channel

Features

• Small Footprint (5×6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

| Symbol| Value| Unit
---|---|---|---
Drain−to−Source Voltage| VDSS| 40| V
Gate−to−Source Voltage| VGS| ±20| V
Continuous Drain Current RSJC (Notes 1, 3)| Steady State| TC = 25°C| ID| 78| A
TC = 100°C| 55
Power Dissipation RSJC (Note 1)| TC = 25°C| PD| 50| W
TC = 100°C| 25
Continuous Drain Current RSJA (Notes 1, 2, 3)| Steady State| TA = 25°C| ID| 21| A
TA = 100°C| 15
Power Dissipation RSJA (Notes 1 & 2)| TA = 25°C| PD| 3.6| W
TA = 100°C| 1.8
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 520| A
Operating Junction and Storage Temperature| TJ, Tstg| − 55 to

+175

| °C
Source Current (Body Diode)| IS| 56| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5 A)| EAS| 107| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

40 V

| 4.5 m Ω @ 10 V| ****

78 A

7.2 m Ω @ 4.5 V

N−CHANNEL MOSFET

ORDERING INFORMATION

See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter| Symbol| Test Condition| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

µA

TJ = 125°C| | | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA

ON CHARACTERISTICS (Note 4)

mQ

VGS = 4.5 V| ID = 35 A| | 5.8| 7.2
Forward Transconductance| gFS| VDS = 15 V, ID = 35 A| | 72| | S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance| CISS| ****

VGS = 0 V, f = 1 MHz, VDS = 20 V

| | 1300| | ****

pF

---|---|---|---|---|---|---
Output Capacitance| COSS| | 530|
Reverse Transfer Capacitance| CRSS| | 22|
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 20 V; ID = 35 A| | 23| | nC
Total Gate Charge| QG(TOT)| VGS = 4.5 V, VDS = 20 V; ID = 35 A| | 11| | ****

nC

Threshold Gate Charge| QG(TH)| | 2.5|
Gate−to−Source Charge| QGS| | 4.7|
Gate−to−Drain Charge| QGD| | 3.0|
Plateau Voltage| VGP| | 3.3| | V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time| td(ON)| VGS = 4.5 V, VDS = 20 V, ID = 35 A, RG = 1.0 Q| | 9.2| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 3.4|
Turn−Off Delay Time| td(OFF)| | 17|
Fall Time| tf| | 4.4|

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage| VSD| VGS = 0 V, IS = 35 A| TJ = 25°C| | 0.86| 1.2|

V

---|---|---|---|---|---|---|---
TJ = 125°C| | 0.75|
Reverse Recovery Time| tRR| VGS = 0 V, dIs/dt = 100 A/µs, IS = 35 A| | 29| |

ns

Charge Time| ta| | 14|
Discharge Time| tb| | 14|
Reverse Recovery Charge| QRR| | 12| | nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width 300 s, duty cycle 2%.
5. Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On−Resistance vs. Gate−to−Source Voltage

Figure 4. On−Resistance vs. Drain Current and Gate Voltage

Figure 5. On−Resistance Variation with Temperature

Figure 6. Drain−to−Source Leakage Current vs. Voltage

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

Figure 11. Safe Operating Area

Figure 12. IPEAK vs. Time in Avalanche

Figure 13. Thermal Characteristics

DEVICE ORDERING INFORMATION

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE  BURRS.

DIM

|

MILLIMETERS

---|---
MIN| NOM| MAX
A| 0.90| 1.00| 1.10
A1| 0.00| −−−| 0.05
b| 0.33| 0.41| 0.51
c| 0.23| 0.28| 0.33
D| 5.00| 5.15| 5.30
D1| 4.70| 4.90| 5.10
D2| 3.80| 4.00| 4.20
E| 6.00| 6.15| 6.30
E1| 5.70| 5.90| 6.10
E2| 3.45| 3.65| 3.85
e|

1.27 BSC

G| 0.51| 0.575| 0.71
K| 1.20| 1.35| 1.50
L| 0.51| 0.575| 0.71
L1|

0.125 REF

M| 3.00| 3.40| 3.80
9| 0 0| −−−| 12 0

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.

DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO−8FL)| PAGE 1 OF 1

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