onsemi NTMFS5C430NL MOSFET Power Single N-Channel Instructions

onsemi NTMFS5C430NL MOSFET Power Single N-Channel

MOSFET – Power, Single,N-Channel
40 V, 1.4 m, 200 A

Features

• Small Footprint (5×6 mm) for Compact Design
• Low RDS(on) to Minimize Conduction Losses
• Low QG and Capacitance to Minimize Driver Losses
• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

(TJ = 25°C unless otherwise noted)

Steady State

| TC = 25°C| ID| 200| A
TC = 100°C| 140
Power Dissipation RSJC (Note 1)| TC = 25°C| PD| 110| W
TC = 100°C| 53
Continuous Drain Current RSJA (Notes 1, 2, 3)| ****

Steady State

| TA = 25°C| ID| 38| A
TA = 100°C| 27
Power Dissipation RSJA (Notes 1 & 2)| TA = 25°C| PD| 3.8| W
TA = 100°C| 1.9
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 900| A
Operating Junction and Storage Temperature| TJ, Tstg| − 55 to

+175

| °C
Source Current (Body Diode)| IS| 120| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 15 A)| EAS| 493| mJ
Single Pulse Drain−to−Source Voltage (tp = 10 µs)| VDSM| 48| V
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.

40 V

| 1.4 mQ @ 10 V| ****

200 A

2.2 mQ @ 4.5 V

N−CHANNEL MOSFET

• 5C430L = Specific Device Code
• A          = Assembly Location
• Y          = Year
• W         = Work Week
• ZZ       = Lot Traceability

ORDERING INFORMATION

See detailed ordering, marking and shipping information on page 5 of this data sheet.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter| Symbol| Test Condition| Min| Typ| Max| Unit
---|---|---|---|---|---|---

OFF CHARACTERISTICS

µA

TJ = 125°C| | | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA

ON CHARACTERISTICS (Note 4)

mQ

VGS = 4.5 V| ID = 50 A| | 1.7| 2.2
Forward Transconductance| gFS| VDS = 15 V, ID = 50 A| | 180| | S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance| CISS| ****

VGS = 0 V, f = 1 MHz, VDS = 20 V

| | 4300| 4942| ****

pF

---|---|---|---|---|---|---
Output Capacitance| COSS| | 1900| 2850
Reverse Transfer Capacitance| CRSS| | 72| 144
Total Gate Charge| QG(TOT)| VGS = 4.5 V, VDS = 20 V; ID = 50 A| | 32| 45|

nC

Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 20 V; ID = 50 A| | 70| 82
Threshold Gate Charge| QG(TH)| ****

VGS = 4.5 V, VDS = 20 V; ID = 50 A

| | 7.0| 10
Gate−to−Source Charge| QGS| | 12| 15
Gate−to−Drain Charge| QGD| | 9.0| 16
Plateau Voltage| VGP| | 2.9| 5.0| V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time| td(ON)|

VGS = 4.5 V, VDS = 20 V, ID = 50 A, RG = 1.0 Q

| | 15| 28|

ns

---|---|---|---|---|---|---
Rise Time| tr| | 140| 273
Turn−Off Delay Time| td(OFF)| | 31| 67
Fall Time| tf| | 9| 19

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage| VSD| VGS = 0 V, IS = 50 A| TJ = 25°C| | 0.81| 1.2|

V

---|---|---|---|---|---|---|---
TJ = 125°C| | 0.68|
Reverse Recovery Time| tRR| ****

VGS = 0 V, dIs/dt = 100 A/µs, IS = 50 A

| | 61| 77| ****

ns

Charge Time| ta| | 29| 38
Discharge Time| tb| | 32| 50
Reverse Recovery Charge| QRR| | 80| 92| nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

• Pulse Test: pulse width 300 , duty cycle 2%.
• Switching characteristics are independent of operating junction temperatures.

TYPICAL CHARACTERISTICS

DEVICE ORDERING INFORMATION

(Pb−Free)

| 1500 / Tape & Reel
NTMFS5C430NLT3G| 5C430L| DFN5

(Pb−Free)

| 5000 / Tape & Reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

DFN5 5×6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N

DATE 25 JUN 2018

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS.

DIM

| MILLIMETERS
---|---
MIN| NOM| MAX
A| 0.90| 1.00| 1.10
A1| 0.00| −−−| 0.05
b| 0.33| 0.41| 0.51
c| 0.23| 0.28| 0.33
D| 5.00| 5.15| 5.30
D1| 4.70| 4.90| 5.10
D2| 3.80| 4.00| 4.20
E| 6.00| 6.15| 6.30
E1| 5.70| 5.90| 6.10
E2| 3.45| 3.65| 3.85
e| 1.27 BSC
G| 0.51| 0.575| 0.71
K| 1.20| 1.35| 1.50
L| 0.51| 0.575| 0.71
L1| 0.125 REF
M| 3.00| 3.40| 3.80
9| 0 0| −−−| 12 0

GENERIC MARKING DIAGRAM

• XXXXXX = Specific Device Code
• A               = Assembly Location
• Y               = Year
• W              = Work Week
• ZZ            = Lot Traceability

This information is generic. Please refer to device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.

For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO−8FL)| PAGE 1 OF 1

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TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910

Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative

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