ON SEMICONDUCTOR NVBLS001N06C onsemii screte Semiconductor Owner’s Manual
- August 13, 2024
- ON Semiconductor
Table of Contents
ON SEMICONDUCTOR NVBLS001N06C onsemii screte Semiconductor
Product Information
Specifications:
- Model: NVBLS001N06C
- Type: MOSFET – Power, Single N-Channel
- Drain-to-Source Voltage (VDSS): 60 V
- Power Dissipation: 0.9 mW
- Continuous Drain Current (ID): 422 A
Product Usage Instructions
Features:
- Compliant
Parameter and Value:
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | V |
Operating Instructions:
- Ensure the device is properly connected following the given voltage specifications.
- Avoid exceeding the maximum ratings as it may damage the device.
- Refer to the ordering information for package details.
FAQ:
-
Q: What should I do if I exceed the maximum ratings?
A: If any of the maximum ratings are exceeded, device functionality should not be assumed, damage may occur, and reliability may be affected. -
Q: Where can I find information on tape and reel specifications?
A: For tape and reel specifications, including part orientation and tape sizes, refer to the Tape and Reel Packaging Specification Brochure, BRD8011/D.
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- Lowers Switching Noise/EMI
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 60 V | 0.9 mQ @ 10 V | 422 A |
MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 60 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Current RSJC (Note 2) | Steady State | TC = 25°C | ID |
| TC = 100°C | 298 | ||
| Power Dissipation RSJC (Note 2) | TC = 25°C | PD | 284 |
| TC = 100°C | 142 | ||
| Continuous Drain Current RSJA (Notes 1, 2) | Steady State | TA = 25°C | ID |
| TA = 100°C | 36 | ||
| Power Dissipation RSJA (Notes 1, 2) | TA = 25°C | PD | 4.2 |
| TA = 100°C | 2.1 | ||
| Pulsed Drain Current | TA = 25°C, tp = 10 µs | IDM | 900 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | − 55 to |
+175
| °C
Source Current (Body Diode)| IS| 236| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 39 A)| EAS| 1640| mJ
Lead Temperature Soldering Reflow for Solder- ing Purposes (1/8² from case for
10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State (Note 2) | RSJC | 0.53 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 36 |
- Surface−mounted on FR4 board using a 1 in2 pad size, 2 oz. Cu pad.
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
ORDERING INFORMATION
| Device | Package | Shipping † |
|---|---|---|
| NVBLS001N06C | H−PSOF8L |
(Pb−Free)
| 2000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
CHARACTERISTICS
Table 1. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter| Symbol| Test Conditions| Min| Typ|
Max| Units
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| ID = 250 µA, VGS = 0 V| 60| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| ID =
562 µA, ref to 25°C| | 26| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VDS = 60 V, VGS = 0 V| TJ = 25°C| | |
10| µA
TJ = 125°C| | | 100| µA
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA
ON CHARACTERISTICS (Note 3)
| Gate Threshold Voltage | VGS(th) | VGS = VDS, ID = 562 µA | 2.0 | 2.8 | 4.0 | V |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(th)/TJ | ID = 562 µA, ref to | ||||
| 25°C | 9.9 | mV/°C | ||||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 80 A | 0.75 | 0.9 |
mQ
Forward Transconductance| gFS| VDS = 5 V, ID = 80 A| | 290| | S
CHARGES & CAPACTIANCES
| Input Capacitance | Ciss | VGS = 0 V, VDS = 30 V, f = 10 kHz | 11575 | pF | ||
|---|---|---|---|---|---|---|
| Output Capacitance | Coss | 5973 | pF | |||
| Reverse Transfer Capacitance | Crss | 76 | pF | |||
| Total Gate Charge | QG(tot) | VGS = 10 V, VDS = 30 V, ID = 80 A | 143 | nC | ||
| Threshold Gate Charge | QG(th) | 31 | nC | |||
| Gate−to−Source Charge | Qgs | 54 | nC | |||
| Gate−to−Drain Charge | Qgd | 13 | nC |
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time| td(on)| VGS = 10 V, VDS = 30 V, ID = 80 A, RG = 6 Q| |
34| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 53| | ns
Turn−Off Delay Time| td(off)| | 119| | ns
Fall Time| tf| | 91| | ns
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | IS = 80 A, VGS = 0 V | TJ = 25°C | 0.79 | 1.2 | V | |
|---|---|---|---|---|---|---|---|
| IS = 80 A, VGS = 0 V | TJ = 125°C | 0.66 | V | ||||
| Reverse Recovery Time | trr | VGS = 0 V, dIS/dt = 100 A/µs, IS = 56 A | 120 | ||||
| ns | |||||||
| Charge Time | ta | 60 | ns | ||||
| Discharge Time | tb | 60 | ns | ||||
| Reverse Recovery Charge | Qrr | 322 | nC |
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product performance
may not be indicated by the Electrical Characteristics if operated under
different conditions.
Switching characteristics are independent of operating junction temperatures
TYPICAL CHARACTERISTICS
PACKAGE DIMENSIONS
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ADDITIONAL INFORMATION
- TECHNICAL PUBLICATIONS:
- Technical Library: www.onsemi.com/design/resources/technical−documentation
- onsemi Website: www.onsemi.com
- ONLINE SUPPORT: www.onsemi.com/support
- For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
Documents / Resources
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SEMICONDUCTOR NVBLS001N06C onsemii screte
Semiconductor
[pdf] Owner's Manual
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