ATS 2ATC300C17 Dual Channel High Power IGBT Drive Board Owner’s Manual
- July 3, 2024
- ATS
Table of Contents
- ATS 2ATC300C17 Dual Channel High Power IGBT Drive Board
- Product Usage Instructions
- Description
- Mechanical Dimensions
- Pin Designation
- Electrical Characteristics
- Description of Primary Side Interface
- Vce monitoring / short-circuit protection
- References
- Read User Manual Online (PDF format)
- Download This Manual (PDF format)
ATS 2ATC300C17 Dual Channel High Power IGBT Drive Board
Specifications
- Product Name: 2ATC300C17 Dual Channel Driver Core
- Manufacturer: AT Electronics Hongkong Limited
- Channels: Dual
- High-power IGBT Driver
- Primary Side Pin Grid: 2.54mm
- Pin Cross Section: 0.64mm x 0.64mm
Product Usage Instructions
Mechanical Dimensions
Refer to the mechanical drawing provided in Fig.2 for detailed dimensions.
Ensure adherence to margin tolerances per ISO 2768-1. Solder pads should have
a diameter of 2mm, and drill holes should have a diameter of 1mm.
Pin Designation
- P1 Terminal:
- VDDS (1-3): Signal and logic supply voltage for the primary side
- Fault (4,10): Open drain fault output with active high signal and logic input
- Reset (5): Input for reset
- Mode (9): Operating mode selection input
- INA (11): Active high PWM input for channel A
- GNDS (12): Signal and logic common ground for the primary side
P2 Terminal:
- E.A (1): Active high external digital fault input for driver channel A
- VCEsatA (2): IGBT desaturation sensing input for driver channel A
P3 Terminal
- E.B (1): Active high external digital fault input for driver channel B
- VCEsatB (2): IGBT desaturation sensing input for driver channel B
FAQ
-
Q: What is the recommended solder pad diameter for this product
A: The recommended diameter for solder pads is 2mm. -
Q: How can I adjust the dead time in half-bridge mode for Channel A?
A: You can adjust the dead time by using an external capacitor connected to terminal CA. -
Q: What is the purpose of the Mode input?
A: The Mode input is used for selecting the operating mode of the driver core.
2ATC300C17
Dual Channel Driver Core
2ATC300C17 Dual-Channel High-power IGBT Driver Preliminary Description & Application Manual
Description
The 2ATC300C17 is a dual channel high voltage gate driver board featuring
reinforced isolation
between logic side and high voltage output. Control and protection functions
are included to ease the design of highly reliable systems.
The 2ATC300C17 is designed for use in industrial applications and the
2ATC300C17T, with special coating, for the use in more demanding applications
like railway traction or windmills.The device consists of two galvanically
separated driver channels and features two operating functions, the direct
mode and the half-bridge mode, to drive IGBT modules.
The 2ATC300C17 is designed for use with Infineon IGBT modules up to 1700V in
applications with high safety and reliability requirements and aims for power
ratings of 75kW to 1MW.
The driver also includes IGBT desaturation protection, external failure input
and Undervoltage Lockout
(UVLO) detection. All fault states set the fault memory and activate the open
drain fault output.
Mechanical Dimensions
Note:
- Legend unit: mm.
- The margin tolerance conforms with the ISO 2768-1.
- The primary side and secondary side pin grid is 2.54mm with a pin cross section of 0.64mmx0.64mm. Recommended diameter of solder pads is 2mm and diameter of drill holes is 1mm
Pin Designation
P1 Terminal
Pin | Des. | Function | Pin | Des. | Function |
---|---|---|---|---|---|
1 | VDDS | Signal and logic supply |
voltage primary side
| 13| GNDS| Signal and logic common
ground primary side
2| VDDS| Signal and logic supply
voltage primary side
| 14| VDDP| DC/DC-SMPS supply voltage
primary side
3| VDDS| Signal and logic supply
voltage primary side
| 15| VDDP| DC/DC-SMPS supply voltage
primary side
4| /Fault| Open drain fault output| 16| VDDP| DC/DC-SMPS supply voltage
primary side
5| Reset| Active high signal and logic
reset input
| 17| VDDP| DC/DC-SMPS supply voltage
primary side
6
| ****
CA
| External capacitor terminal for
half-bridge mode dead time adjustment channel A
| ****
18
| ****
VDDP
| DC/DC-SMPS supply voltage primary side
7| INB| Active high PWM input
channel B
| 19| GNDP| DC/DC-SMPS ground primary
side
8
| ****
CB
| External capacitor terminal for half-bridge mode dead time
adjustment channel B
| ****
20
| ****
GNDP
| DC/DC-SMPS ground primary side
9| Mode| Operating mode selection
input
| 21| GNDP| DC/DC-SMPS ground primary
side
10| /Fault| Open drain fault output| 22| GNDP| DC/DC-SMPS ground primary
side
11| INA| Active high PWM input
channel A
| 23| GNDP| DC/DC-SMPS ground primary
side
12| GNDS| Signal and logic common
ground primary side
| | |
P2 Terminal
Pin | Des. | Function |
---|---|---|
1 | E.A | Active high external digital fault input driver channel A |
2 | VCEsatA | IGBT desaturation sensing input driver channel A |
3 | RCA | Desaturation reference curve RC network terminal driver channel A |
4 | SenseA | Active clamping input or soft shut down resistor terminal driver |
channel A
5| VA-| External capacitor terminal for negative power supply driver channel A
6| VA+| External capacitor terminal for positive power supply driver channel A
7| COMA| Common ground terminal driver channel A
---|---|---
8| COMA| Common ground terminal driver channel A
9| GateA| IGBT gate output driver channel A
10| GateA| IGBT gate output driver channel A
P3 Terminal
Pin | Des. | Function |
---|---|---|
1 | E.B | Active high external digital fault input driver channel B |
2 | VCEsatB | IGBT desaturation sensing input driver channel B |
3 | RCB | Desaturation reference curve RC network terminal driver channel B |
4 | SenseB | Active clamping input or soft shut down resistor terminal driver |
channel B
5| VB-| External capacitor terminal for negative power supply driver channel B
6| VB+| External capacitor terminal for positive power supply driver channel B
7| COMB| Common ground terminal driver channel B
8| COMB| Common ground terminal driver channel B
9| GateB| IGBT gate output driver channel B
10| GateB| IGBT gate output driver channel B
Absolute Maximum Ratings
Absolute maximum ratings are defined as ratings, which when being exceeded
may lead to destruction of the driver board. Unless otherwise noted all
primary side parameters refer to GNDS. The secondary side signals from driver
channel A and driver channel B are measured with respect to their individual
COMA or COMB.
Parameter | Remarks | Min | Max | Unit |
---|
Positive power supply voltage Logic and
Signa
| VVDDS(note 1)| | 16.5| V
Positive power supply voltage DC/DC SMPS| VVDDP(note 2)| | 16.5| V
Total input current VVDDS and VVDDP| IVDDS,sum (note 3)| | 670| mA
PWM signal input voltage INA, INB| VINA, VINB| -20| 20| V
Logic signal input voltage Mode, Reset| VMode, VReset| -20| 20| V
Voltage on open drain fault output| Vfault| | 20| V
Total fault output current on one or both
terminals
| IFault| | 40| mA
Peak turn on output current| IGateA, IGateB(note 4)| | 30| A
Peak turn off output current| IGateA, IGateB(note 4)| -30| | A
DC/DC SMPS average current per output| IVX (note5)| | 133| mA
Total DC/DC SMPS output power| PSMPS| | 8| W
Collector emitter voltage of IGBT| VCES| | 1700| V
Minimum total gate resistor| Rgmin| 1| | Ω
---|---|---|---|---
Maximum IGBT gate charge| Qgmax| | 52| µC
Maximum slew rate| dvce/dt(note 6)| | 50| kV/µs
Maximum switching frequency| fsmax(note 7)| | 60| kHz
Operating temperature| Top (note 7)| -40| 85| °C
Storage temperature| Tsto| -40| 85| °C
NOTE:
- With respect to GNDS
- With respect to GNDP
- Calculated value for equivalent average DC input current @ maximum SMPS output power of 8W
- Maximum output current of the transistor power stage
- Maximum DC output current per DC/DC output voltage calculated for total SMPS power of 8W
- The parameter is not subject to production test – verified by design/characterization
- Operating temperature depends on load and environmental conditions
Electrical Characteristics
Recommended Operating Parameters
Unless noted otherwise, all primary side signals refer to GNDS. The secondary
side signals from driver channel A and driver channel B are measured with
respect to their individual COMA or COMB.
Parameter | Remarks | Value | Unit |
---|---|---|---|
Positive power supply voltage Logic and Signa | VVDDS | 15 | V |
Positive power supply voltage DC/DC SMPS | VVDDP | 15 | V |
PWM signal input voltage INA, INB | VINA, VINB | 15 | V |
Logic signal input voltage Mode, Reset | VMode, VReset | 15 | V |
Voltage on open drain fault output in non-fault condition |
Vfault
|
15
|
V
Switching frequency @ 65°C operating
temperature
| fsmax| 60| kHz
Electrical Characteristics
The electrical characteristics involve the spread of values for the supply
voltages, load and junction temperatures given below. Typical values represent
the median values, which are related to production processes at T = 25°C.
VVDDS and VVDDP are 15V. Unless otherwise noted all voltages are given with
respect to GNDS. The specification for all output driver signals is valid for
driver channel A and driver channel B without special notice. The secondary
signals are measured with respect to their individual COMA or COMB
Parameter | Remarks | Min | typ | Max | Unit |
---|---|---|---|---|---|
No load SMPS average DC input current | VVDDS | 80 | mA | ||
Signal and Logic DC input current | VVDDP | 10 | mA | ||
--- | --- | --- | --- | --- | --- |
Turn on propagation delay time | tpd,on | 670 | ns | ||
Turn off propagation delay time | tpd,off | 580 | ns | ||
Transition time differences | tdif | 50 | ns | ||
Minimal pulse suppression | tmd | 400 | ns | ||
DC input impedance of INA, INB, Mode, Reset | 3300 | Ω | |||
Input threshold level | VINA,VINB | 8 | V | ||
Input threshold for external failure input E.A or E.B | VE.A, VE.B | 5 | V | ||
Interlock delay time half-bridge mode | tTD | 1.6 | µs |
Reactivation after fault condition @ INA and INB with
low input signal
| treact| 50| 60| | ms
Reference voltage for IGBT desaturation sensing| | | 10| | V
Coupling capacitance primary/secondary| Ccps| | 18| | pF
Coupling capacitance between secondary sides| Ccss| | 15| | pF
External capacitor for Logic and Signal power supply.
Connected between VDDS and GNDS.
| CVDDP| 10| | | µF
External capacitor for SMPS power supply.
Connected between VDDP and GNDP
| CVDDS| 470| | | µF
Positive supply voltage driver channel A and B @ no
switching operation
| VVA+, VVB+| | 16| | V
Negative supply voltage driver channel A and B @ no
switching operation
| VVA-, VVB-| | -16| | V
Internal capacitor on positive supply voltage
driver channel VA+ and VB+
| CVA+,int,
CVB+,int
| | 28| | µF
Internal capacitor on negative supply voltage
driver channel VA- and VB-
| CVA-,int,
CVB-,int
| | 23| | µF
Internal UVLO level for positive supply voltage driver
channel
| VUVLO,pos| | 10.9| | V
Internal UVLO level for negative supply voltage driver
channel
| VUVLO,neg| | -9.3| | V
External capacitor for interlocking generation| CCA, CCB| 0| | 1| nF
Electrical Isolation
Electrical characteristics, at Ta = 25 °C, unless otherwise specified.
Parameter | Remarks | Value | Unit |
---|
Isolation test voltage
|
Signal and Logic Side – Driver Channel A and Driver Channel B (RMS, 50Hz, 1s)
|
5000
|
V
solation test voltage
| Driver Channel A – Driver Channel B (RMS, 50Hz, 1s)|
2250
|
V
Surge voltage tes| Surge test according to EN50178 Signal and Logic Side to
Driver Channels A and| 9600| V
---|---|---|---
Partial discharge test voltage| RMS; transformer series test According to EN
61800-5-1| >1920| V
Clearance and creepage distance primary to secondary| Distance Signal and
Logic Side to Driver Channels A and B| >15| mm
Clearance distance secondary to secondary| Distance Driver Channel A to Driver
Channel
B. 4mm air gap included.
| >4.59| mm
Creepage distance secondary to secondary| Distance Driver Channel A to Driver
Channel B| >14| mm
Recommended Interface Circuitry for the Primary Side Connector
Both ground pins must be connected together with low parasitic inductance. A common ground plane or wide tracks are strongly recommended. The connecting distance between ground pins must be kept at a minimum.
Description of Primary Side Interface
General
The primary side interface of the driver 2ATC300C17 is very simple and easy to
use.
The driver primary side is equipped with a 23-pin interface connector with the
following terminals:
- 8 x power-supply terminals
- 2 x drive signal inputs
- 2 x status outputs (fault returns)
- 1 x mode selection (half-bridge mode / direct mode)
- 2 x inputs to set the dead time (half-bridge mode)
- 1 x not connected (N.C.)
All inputs and outputs are ESD-protected. Moreover, all digital inputs have Schmitt-trigger characteristics.
VDDP terminal
The driver has 5 VDDP terminals on the interface connector to supply the DC-DC
converter for the secondary sides. VDDP should be supplied with a stabilized
+15V power supply.
It is recommended to use a stabilizing capacitor of 220μF between VDDP and
GND.
VDDS terminal
- The driver has 3 VDDS terminals on the interface connector to supply the primary side electronics with 15V.
- It is recommended to connect the VDDS terminals to VDDP via a 10Ω resistor. An additional stabilizing capacitor of 1μF should be placed between VDDS and GND.
- It is also possible to run VDDP and VDDS directly in parallel without a 10Ω resistor.
Mod (mode selection)
The Mod input allows the operating mode to be selected.
Direct mode
If the Mod input is connected to GND, direct mode is selected. In this mode,
there is no interdependence between the two channels. Input INA directly
influences channel A while INB influences channel B. High level at an input
(INA or INB) always results in turn-on of the corresponding IGBT. This mode
should be selected only when the dead times are generated by the control
circuitry so that each IGBT receives its own drive signal.
Caution: Synchronous or overlapping timing of both switches of a half- bridge basically shorts the DC link.
Half-bridge mode
If the Mod input is connected to VDDS, half-bridge mode is selected. In this
mode, the input INA influences channel A while INB influences channel B.
However, only one channel can be turned-on at a given time and a defined dead
time (interlock time) between both channels is generated (Fig. 4). The dead
time between both channels can be adjusted with the input pins CA and CB (see
“CA and CB (input for adjusting the dead time in half-bridge mode)” on page
10). If both signals INA/INB are high, both gate signals are low (-15V).
The following Fig. 4 shows the driver behavior in half-bridge mode. INA, INB (channel drive inputs,
e.g. PWM)
INA and INB are basically drive inputs, but their function depends on the Mod
input (see above). 15V logic-level signals should be applied at INA and INB.
No pulse shorter than 1.5μs should be applied to the driver inputs. A pulse
shorter than 1.5μs could occasionally activate the soft turn-off function of
the driver.
SOA, SOB (status outputs)
The outputs SOx have open-drain transistors. When a fault condition is
detected in channel “x”, the status output SOx goes to low (connected to GND).
Otherwise, the output has high impedance.
Both SOx outputs are not connected to a single signal on the driver. They can
be connected together to provide a common fault signal (e.g. for one phase) if
required.
The maximum SOx current in a fault condition should not exceed the value
specified in the driver data sheet /3/.
How the status information is processed
A fault on the secondary side (detection of short-circuit of IGBT module,
supply under voltage or external fault input) is transmitted to the
corresponding SOx output immediately. The corresponding SOx output is
automatically reset (returning to a high impedance state) after the blocking
time has elapsed (refer to the driver data sheet for timing information /3/).
A supply under voltage on the primary side is indicated to both SOx outputs at
the same time. Both SOx outputs are automatically reset (returning to a high
impedance state) when the under voltage on the primary side disappears (refer
to the driver data sheet for timing information /3/).
Note that no external reset input is available on the driver. The driver is automatically reset after the blocking time has elapsed.
Terminals CA and CB allow the generated dead time between both channels A and B to be determined in half- bridge mode. The dead time can be defined with a capacitor placed between pins CA and CB and GND (Fig. 5).
The following table 1 shows the dead time as a function of the capacitance of CA and CB:
Capacitance of CA and CB | Dead time |
---|---|
0pF | 1.3μs |
47pF | 1.7μs |
100pF | 2.1μs |
220pF | 3.0μs |
330pF | 3.8μs |
470pF | 4.8μs |
1nF | 8.8μs |
Table 1 Generated dead time as a function of CA and CB in half-bridge mode
In direct mode, it is recommended to connect the inputs CA and CB with a 470pF
capacitor to GND. CA or CB must not be connected to any external potential
(e.g. GND or VDDS).
Recommended Interface Circuitry for the Secondary Side Connectors
Description of Secondary Side Interfaces
General
The driver’s secondary sides are each equipped with a 10-pin interface
connector with the following terminals (x stands for A or B):
- 2 x DC/DC output terminals (Vx+ and Vx-)
- 2 x emitter terminals COM x
- 1 x reference terminal RC x for overcurrent or short-circuit protection
- 1 x collector sense terminal VCE x
- 2 x gate terminals Gate x
- 1 x sense terminal for active clamping and/or soft-turn-off Sense x
- 1 x external fault input E.x
All inputs and outputs are ESD-protected.
DC/DC output (Vx+, Vx-) and COM x terminals
The driver is equipped with blocking capacitors on the secondary side of the
DC/DC converter (for values, refer to the data sheet /3/). It is recommended
to use additional external blocking capacitors of 220μF to reduce the dynamic
voltage drop due to high pulse currents.
The blocking capacitors must be placed between Vx+ and COM x as well as
between COM x and Vx- (Fig. 5). They must be connected as close as possible to
the driver’s terminal pins with minimum inductance. Capacitors with high
ripple current capability should be used.
Reference terminal (RC x)
The reference terminal RC x allows the threshold to be set for short-circuit
and/or overcurrent protection with a resistor Rth placed between RC x and COM
x. Moreover, instead of a static reference, a dynamic reference is used to
check the collector-emitter voltage of the IGBT at turn-on. The time constant
of the dynamic reference can be set with a capacitor Cth placed between RC x
an COM x. It allows the short-circuit duration to be adjusted in case of IGBT
short-circuit.
The following table 2 shows the static reference as well as the short-circuit
duration (short-circuit type I) according to IEC 60747-9 for different values
of Rth and Cth. The short-circuit duration was measured under the following
conditions:
- IGBT module: FF1000R17IE4 from Infineon
- Rg,on=1.2Ω and Rg,off=1.8Ω
- Rssd=10kΩ, Ca=1nF (Fig. 5)
- DC-link voltage: 1000V
| Short-circuit duration
---|---
Resistance Rth| Threshold| Cth=0pF| Cth=100pF| Cth=220pF| Cth=470pF| Cth=1nF
2kΩ| 1.9V| 2μs| 2.1μs| 2.3μs| 2.7μs| 3.6μs
5.4kΩ| 3.9V| 2.2μs| 2.6μs| 3.1μs| 3.9μs| 5.6μs
12kΩ| 5.8V| 2.5μs| 3.5μs| 4.2μs| 5.5μs| 7.6μs
32kΩ| 7.8V| 3.7μs| 4.9μs| 5.9μs| 7.4μs| 10μs
70kΩ| 8.8V| 5.1μs| 6μs| 7μs| 8.6 μs| 11.7μs
Table 2 Dynamic threshold voltage for overcurrent and/or short-circuit
protection
Note that the short-circuit duration is dependent on the IGBT module used and
the gate resistors. It is therefore recommended to measure it in the final
application. The short-circuit duration should not exceed the maximum value
given in the IGBT module data sheet.
Collector sense (VCE x)
2ATC300C17 drivers are equipped with a dynamic collector sense function. The
collector sense must be connected to the IGBT collector with the circuit shown
in Fig. 5 in order to detect an IGBT overcurrent or short-circuit.
Gate terminals Gate x
These terminals allow the turn-on and turn-off gate resistors to be connected
to the gate of the power semiconductor. Please refer to the driver data sheet
/3/ for the limit values of the gate resistors used.
The auxiliary emitter of the IGBT must be connected directly to the COM x
terminals of the driver.
A resistor Rge of 10kΩ between Gate x and COM x is recommended in order to
provide a low-impedance path from the IGBT gate to the emitter even if the
driver is not supplied with power. Moreover, gate clamping should be realized
with a zener diode between Gate x and COM x.
Note however that it is not advisable to operate the power semiconductors within a half-bridge with a driver in the event of a low supply voltage. Otherwise, a high rate of increase of Vce may cause partial turn-on of these IGBTs.
Sense input (Sense x)
The Sense x inputs can be used:
- to adjust the soft turn-off behavior
- to activate active clamping.
Both techniques allow the IGBT to be protected against collector-emitter
overvoltages in case of overcurrent and/or short-circuit turn-off. Note that
soft turn-off does not offer 100% protection against turn-off overvoltages. If
the pulse duration determined by the corresponding input INx is shorter than
the driver response time (time between gate-emitter turn-on and short-circuit
detection), the driver will switch off the short-circuit without the soft
turn-off function. In this case, active clamping can be used to limit the
turn-off overvoltage.
A typical value of Rssd=10kΩ is recommended. If necessary, this value can be
modified in order to adjust the soft turn-off behavior of the driver.
External fault input E.x
The 2ATC300C17 is equipped with an external fault input on each driver
channel. This allows a fault to be generated on the corresponding channel. The
external fault is handled in the same way as an overcurrent/short-circuit or
supply undervoltage fault.
If the external fault input E.x is not used, it must be connected to COM x.
If it is used, the following conditions must be met in order to ensure proper
function of the driver:
- The slew rate of E.x should be higher than 0.1V/μs
- The pulse width applied to E.x must be longer than 1μs
- As soon as one channel is in a fault condition (SOx output goes to low), the other channel must be switched off (it is not switched off by the driver)
The dead time between both channels must be higher than 2μs + reaction time of the host system (time between fault feedback SOx of the driver and turn-off command for the other channel)
Working in Detail
Power supply and electrical isolation
The driver is equipped with a DC/DC converter to provide an electrically
insulated power supply to the gate driver circuitry. All transformers (DC/DC
and signal transformers) feature safe isolation to EN 50178, protection class
II between the primary side and either secondary side.
Note that the driver requires a stabilized supply voltage.
Power-supply monitoring
The driver’s primary side as well as both secondary-side driver channels are
equipped with a local under voltage monitoring circuit.
In case of a primary-side supply under voltage, both IGBTs are driven with a
negative gate voltage to keep them in the off-state (both channels are
blocked) and the fault is transmitted to both outputs SOA and SOB until the
fault disappears.
In case of a secondary-side supply under voltage, the corresponding IGBT is
driven with a negative gate voltage to keep it in the off-state (the channel
is blocked) and a fault condition is transmitted to the corresponding SOx
output. The SOx output is automatically reset (returning to a high impedance
state) after the blocking time.
Vce monitoring / short-circuit protection
The 2ATC300C17 driver is equipped with a Vce monitoring circuit. The
recommended circuit is illustrated in Fig. 5. A resistor and a capacitor (Rth
and Cth in Fig. 5) are used as the reference elements for defining the dynamic
turn-off threshold.
It is recommended to use a value of Ca=1nF and fast diodes such as UF4007 (2
diodes for 1200V or 1700V IGBTs) for D1.
During the response time, the Vce monitoring circuit is inactive. The response
time is the time that elapses after turn-on of the power semiconductor until
the collector/drain voltage is measured
Vce is checked after the response time at turn-on to detect a short circuit or
overcurrent. If this voltage is higher than the programmed threshold Vth, the
driver detects a short circuit or overcurrent, switches the power
semiconductor off and signals the fault immediately to the corresponding SOx
output. The power semiconductor is kept off (non-conducting) and the fault is
shown at pin SOx as long as the blocking time is active.
Blocking time
In case of a secondary side fault (short-circuit or overcurrent, supply under
voltage, external fault input), the fault is immediately transmitted to the
primary side and shown at the corresponding output SOx. The corresponding
channel is blocked during the blocking time (for timing information, refer to
the driver data sheet). After the blocking time, the driver channel is
automatically reset and the fault at the corresponding SOx output disappears.
Note that the other channel (channel without fault) is not turned off and no
fault is generated at the corresponding SOx output.
2ATC300C17 datasheet
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References
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