Microsemi APT77N60JC3 Super Junction MOSFET User Manual
- June 13, 2024
- Microsemi
Table of Contents
Microsemi APT77N60JC3 Super Junction MOSFET
Super Junction MOSFET
- Ultra Low RDS(ON)
- Low Miller Capacitance
- Ultra Low Gate Charge, Qg
- Avalanche Energy Rated
- Extreme dv/dt Rated
- Dual die (parallel)
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
All Ratings per die: TC = 25°C unless otherwise specified.
| Symbol | Parameter | APT77N60JC3 | UNIT |
|---|---|---|---|
| VDSS | Drain-Source Voltage | 600 | Volts |
| ID | Continuous Drain Current @ T = 25°C 1 |
C
| 77| ****
Amps
IDM| Pulsed Drain Current 2| 231
VGS| Gate-Source Voltage Continuous| ±20| Volts
VGSM| Gate-Source Voltage Transient| ±30|
PD
| Total Power Dissipation @ TC = 25°C| 568| Watts
Linear Derating Factor| 4.55| W/°C
TJ,TSTG| Operating and Storage Junction Temperature Range| -55 – to 150| ****
°C
TL| Lead Temperature: 0.063″ from Case for 10 Sec.| 300
dv/dt| Drain-Source Voltage slope (VDS = 400V, ID = 77A, TJ = 125°C)| 50| V/ns
IAR| Avalanche Current 2| 20| Amps
EAR| Repetitive Avalanche Energy 3| 1| ****
mJ
EAS| Single Pulse Avalanche Energy| 180
STATIC ELECTRICAL CHARACTERISTICS
Symbol| Characteristic / Test Conditions| MIN| TYP|
MAX| UNIT
---|---|---|---|---|---
BV(DSS)| Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA)| 600| | |
Volts
RDS(on)| Drain-Source On-State Resistance 4 (V = 10V, I = 70A)
GS D
| | .030| 0.035| Ohms
IDSS
| Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V)| | 1.0| 50| ****
μA
Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C)| | | 500
IGSS| Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)| | | ±200| nA
VGS(th)| Gate Threshold Voltage (VDS = VGS, ID = 5.92mA)| 2.1| 3| 3.9| Volts
CAUTION : These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. “COOLMOS™ comprise a new family of transistors developed by Infi neon Technologies AG. “COOLMOS” is a trademark of Infi neon Technologies AG”
DYNAMIC CHARACTERISTICS
Symbol| Characteristic| Test Conditions| MIN|
TYP| MAX| UNIT
---|---|---|---|---|---|---
Ciss| Input Capacitance| VGS = 0V VDS = 25V
f = 1 MHz
| | 13600| | ****
pF
Coss| Output Capacitance| | 4400|
Crss| Reverse Transfer Capacitance| | 290|
Qg| Total Gate Charge 3| VGS = 10V VDD = 300V
ID = 77A @ 25°C
| | 505| 640| ****
nC
Qgs| Gate-Source Charge| | 48|
Qgd| Gate-Drain (“Miller “) Charge| | 240|
td(on)| Turn-on Delay Time| RESISTIVE SWITCHING
VGS = 10V VDD = 380V
ID = 77A @ 125°C RG = 0.9Ω
| | 18| | ****
ns
tr| Rise Time| | 27|
td(off)| Turn-off Delay Time| | 110| 165
tf| Fall Time| | 8| 12
Eon| Turn-on Switching Energy 6| INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω
| | 1670| | ****
μJ
Eoff| Turn-off Switching Energy| | 2880|
Eon| Turn-on Switching Energy 6| INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V ID = 77A, RG = 5Ω
| | 2300|
Eoff| Turn-off Switching Energy| | 3100|
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol| Characteristic / Test Conditions| MIN| TYP|
MAX| UNIT
---|---|---|---|---|---
IS| Continuous Source Current (Body Diode)| | | 77| Amps
ISM| Pulsed Source Current 1 (Body Diode)| | | 231
VSD| Diode Forward Voltage 2 (V = 0V, I = -77A)
GS S
| | 1| 1.2| Volts
t rr| Reverse Recovery Time (IS = -77A, dlS/dt = 100A/μs, VR = 350V)| | 861|
| ns
Q rr| Reverse Recovery Charge (IS = -77A, dlS/dt = 100A/μs, VR = 350V)| | 46|
| μC
dv/
dt
| Peak Diode Recovery dv/ 5
dt
| | | 6| V/ns
THERMAL CHARACTERISTICS
| Symbol | Characteristic | MIN | TYP | MAX | UNIT |
|---|---|---|---|---|---|
| RθJC | Junction to Case | 0.22 | °C/W | ||
| RθJA | Junction to Ambient | 40 |
- Repetitive Rating: Pulse width limited by maximum junction temperature
- Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
- See MIL-STD-750 Method 3471
- Starting Tj = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A
- dv/dt numbers refl ect the limitations of the test circuit rather than the device itself. IS ≤ -ID77A di/dt ≤ 700A/μs VR ≤ VDSS TJ ≤ 150°C
- Eon includes diode reverse recovery. See fi gures 18, 20.
- Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein
Typical Performance
SOT-227 (ISOTOP®) Package Outline
Documents / Resources
|
Microsemi APT77N60JC3 Super Junction
MOSFET
[pdf] User Manual
APT77N60JC3 Super Junction MOSFET, APT77N60JC3, Super Junction MOSFET,
Junction MOSFET, MOSFET
---|---
References
Read User Manual Online (PDF format)
Read User Manual Online (PDF format) >>