onsemi NTMFS5H610NL MOSFET Power Single N-Channel Instruction Manual
- June 9, 2024
- onsemi
Table of Contents
onsemi NTMFS5H610NL MOSFET Power Single N-Channel
MOSFET – Power, Single,
N-Channel
60 V, 10 m, 44 A
Features
- Small Footprint (5×6 mm) for Compact Design
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
| Symbol| Value| Unit
---|---|---|---
Drain−to−Source Voltage| VDSS| 60| V
Gate−to−Source Voltage| VGS| ±20| V
Continuous Drain Current RSJC (Notes 1, 3)| Steady State| TC = 25°C| ID| 44| A
TC = 100°C| 28
Power Dissipation RSJC (Note 1)| TC = 25°C| PD| 43| W
TC = 100°C| 17
Continuous Drain Current RSJA (Notes 1, 2, 3)| Steady State| TA = 25°C| ID|
12| A
TA = 100°C| 7.3
Power Dissipation RSJA (Notes 1, 2)| TA = 25°C| PD| 3.0| W
TA = 100°C| 1.2
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 222| A
Operating Junction and Storage Temperature Range| TJ, Tstg| − 55 to
+150
| °C
Source Current (Body Diode)| IS| 36| A
Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.8 A)| EAS| 175| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case − Steady State | RSJC | 2.9 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 42 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
| V (BR)DSS | R DS(ON) MAX | I D MAX |
|---|---|---|
| 60 V | 10 mΩ @ 10 V | 44 A |
13 mΩ @ 4.5 V
N−CHANNEL MOSFET
5H610L = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 60| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/ TJ| | |
39.2| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 60 V| TJ = 25 °C| |
| 10| ****
µA
TJ = 125°C| | | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 40 µA | 1.2 | 2.0 | V | |
|---|---|---|---|---|---|---|
| Threshold Temperature Coefficient | VGS(TH)/TJ | −5.0 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V | ID = 8 A | 8.0 | 10 |
mQ
VGS = 4.5 V| ID = 7 A| | 10.5| 13
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance| CISS| VGS = 0 V, f = 1 MHz, VDS = 30 V| | 880| | ****
pF
---|---|---|---|---|---|---
Output Capacitance| COSS| | 150|
Reverse Transfer Capacitance| CRSS| | 6.0|
Output Charge| QOSS| VGS = 0 V, VDD = 30 V| | 12| | ****
nC
Total Gate Charge| QG(TOT)| VGS = 10 V, VDS = 30 V; ID = 8 A| | 13.7|
Total Gate Charge| QG(TOT)| VGS =4.5 V, VDS = 30 V; ID = 8 A| | 6.4|
Threshold Gate Charge| QG(TH)| | 1.6|
Gate−to−Source Charge| QGS| | 2.6|
Gate−to−Drain Charge| QGD| | 1.3|
Plateau Voltage| VGP| | 2.6| | V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(ON)| VGS = 4.5 V, VDS = 30 V, ID = 8 A, RG = 2.5 Q| | 9.5| |
ns
---|---|---|---|---|---|---
Rise Time| tr| | 23|
Turn−Off Delay Time| td(OFF)| | 22|
Fall Time| tf| | 6|
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage| VSD| VGS = 0 V, IS = 8 A| TJ = 25°C| | 0.8| 1.2| ****
V
---|---|---|---|---|---|---|---
TJ = 125°C| | 0.65|
Reverse Recovery Time| tRR| VGS = 0 V, dIS/dt = 100 A/µs, IS = 4 A| | 24| |
ns
Charge Time| ta| | 15|
Discharge Time| tb| | 9|
Reverse Recovery Charge| QRR| | 17| | nC
Product parametric performance is indicated in the Electrical Characteristics
for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated
under different conditions.
4. Pulse Test: pulse width 300 s, duty cycle 2%.
5. Switching characteristics are independent of operating junction
temperatures.
TYPICAL CHARACTERISTICS
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On−Resistance vs. Gate−to−Source Voltage
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
| Device | Marking | Package | Shipping † |
|---|---|---|---|
| NTMFS5H610NLT1G | 5H610L | DFN5 (Pb−Free) | 1500 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
NOTES:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
- CONTROLLING DIMENSION: MILLIMETER.
- DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS
DIM
|
MILLIMETERS
---|---
MIN| NOM| MAX
A| 0.90| 1.00| 1.10
A1| 0.00| −−−| 0.05
b| 0.33| 0.41| 0.51
c| 0.23| 0.28| 0.33
D| 5.00| 5.15| 5.30
D1| 4.70| 4.90| 5.10
D2| 3.80| 4.00| 4.20
E| 6.00| 6.15| 6.30
E1| 5.70| 5.90| 6.10
E2| 3.45| 3.65| 3.85
e|
1.27 BSC
G| 0.51| 0.575| 0.71
K| 1.20| 1.35| 1.50
L| 0.51| 0.575| 0.71
L1|
0.125 REF
M| 3.00| 3.40| 3.80
9| 0 0| −−−| 12 0
**GENERIC MARKING DIAGRAM***
XXXXXX = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ ”, may or may not be present. Some products may not follow the Generic Marking.
DOCUMENT NUMBER:| 98AON14036D| Electronic versions are uncontrolled
except when accessed directly from the Document Repository. Printed versions
are uncontrolled except when stamped “CONTROLLED COPY” in red.
---|---|---
DESCRIPTION:| DFN5 5×6, 1.27P (SO−8FL)| PAGE 1 OF 1
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