ON Semiconductor NVD5C648NL 60 V N-Channel Power Single MOSFET Owner’s Manual
- August 12, 2024
- ON Semiconductor
Table of Contents
ON Semiconductor NVD5C648NL 60 V N-Channel Power Single MOSFET
Product Specifications
- Part Number: NVD5C648NL
- Drain-to-Source Voltage (VDSS): 60 V
- Power Dissipation (PD): 72 W
- Continuous Drain Current (ID): 89 A
- Gate-to-Source Voltage (VGS): 20 V
Product Usage Instructions
Safety Precautions
Before using the product, ensure to read and understand all safety
precautions mentioned in the user manual.
Installation
Follow the provided datasheet for proper pin configuration and marking
diagram. Ensure correct connections of Drain, Gate, and Source pins.
Operating Conditions
Operate the device within the specified voltage and current limits
mentioned in the specifications to prevent damage.
Thermal Considerations
Ensure proper heat dissipation by adhering to the thermal resistance values
provided. Do not exceed the maximum ratings to maintain device reliability.
Switching Characteristics
Refer to the switching characteristics section for details on turn-on and
turn-off timings for optimal performance in your application.
Frequently Asked Questions (FAQ)
-
Q: What is the maximum Drain-to-Source Voltage of the NVD5C648NL?
- A: The maximum Drain-to-Source Voltage (VDSS) is 60 V.
-
Q: What is the recommended operating current for this MOSFET?
- A: The Continuous Drain Current (ID) is rated at 89 A.
-
Q: How should I handle soldering of the device?
- A: Refer to the Lead Temperature for Soldering Purposes section in the manual for proper soldering guidelines.
NVD5C648NL
MOSFET – Power, Single N-Channel
60 V, 4.1 mΩ, 89 A
Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain−to−Source Voltage | VDSS | 60 | V |
| Gate−to−Source Voltage | VGS | ±20 | V |
| Continuous Drain Cur- rent RSJC (Notes 1 & 3) | **** |
Steady State
| TC = 25°C| ID| 89| A
TC = 100°C| 63
Power Dissipation RSJC (Note 1)| TC = 25°C| PD| 72| W
TC = 100°C| 36
Continuous Drain Cur- rent RSJA (Notes 1, 2 &
| ****
Steady State
| TA = 25°C| ID| 18| A
TA = 100°C| 13
Power Dissipation RSJA (Notes 1 & 2)| TA = 25°C| PD| 3.1| W
TA = 100°C| 1.5
Pulsed Drain Current| TA = 25°C, tp = 10 µs| IDM| 510| A
Operating Junction and Storage Temperature| TJ, Tstg| − 55 to
175
| °C
Source Current (Body Diode)| IS| 85| A
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 7.0 A)|
EAS| 223| mJ
Lead Temperature for Soldering Purposes (1/8² from case for 10 s)| TL| 260| °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction−to−Case (Drain) (Note 1) | RSJC | 2.07 | °C/W |
| Junction−to−Ambient − Steady State (Note 2) | RSJA | 48.1 |
- The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
- Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
- Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
| V (BR)DSS | R DS(on) | I D |
|---|
60 V
| 4.1 mQ @ 10 V| ****
89 A
5.7 mQ @ 4.5 V
MARKING DIAGRAM & PIN ASSIGNMENT
- A = Assembly Location
- Y = Year
- WW = Work Week
- 5C648L = Device Code
- G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions
section on page 5 of this data sheet.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter| Symbol| Test Condition| Min| Typ|
Max| Unit
---|---|---|---|---|---|---
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage| V(BR)DSS| VGS = 0 V, ID = 250 µA| 60| | |
V
---|---|---|---|---|---|---
Drain−to−Source Breakdown Voltage Temperature Coefficient| V(BR)DSS/TJ| | |
24| | mV/°C
Zero Gate Voltage Drain Current| IDSS| VGS = 0 V, VDS = 60 V| TJ = 25°C| | |
10| µA
TJ = 125°C| | | 250
Gate−to−Source Leakage Current| IGSS| VDS = 0 V, VGS = 20 V| | | 100| nA
ON CHARACTERISTICS (Note 4)
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID = 250 µA | 1.2 | 2.1 | V | |
|---|---|---|---|---|---|---|
| Negative Threshold Temperature Coefficient | VGS(TH)/TJ | 5.2 | mV/°C | |||
| Drain−to−Source On Resistance | RDS(on) | VGS = 10 V, ID = 45 A | 3.4 | 4.1 | mQ | |
| VGS = 4.5 V, ID = 45 A | 4.6 | 5.7 | ||||
| Forward Transconductance | gFS | VDS = 5.0 V, ID = 45 A | 120 | S |
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance| Ciss| VGS = 0 V, f = 1.0 MHz, VDS = 25 V| | 2900| |
pF
---|---|---|---|---|---|---
Output Capacitance| Coss| | 1300|
Reverse Transfer Capacitance| Crss| | 28|
Total Gate Charge| QG(TOT)| VDS = 48 V, ID = 45 A| VGS = 4.5 V| | 17| | nC
VGS = 10 V| | 39|
Threshold Gate Charge| QG(TH)| VGS = 4.5 V, VDS = 48 V, ID = 45 A| |
4.8| | nC
Gate−to−Source Charge| QGS| | 8.8|
Gate−to−Drain Charge| QGD| | 3.5|
Plateau Voltage| VGP| | 3.2| | V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time| td(on)|
VGS = 4.5 V, VDS = 48 V, ID = 45 A, RG = 2.5 Q
| | 21| | ns
---|---|---|---|---|---|---
Rise Time| tr| | 91|
Turn−Off Delay Time| td(off)| | 47|
Fall Time| tf| | 68|
DRAIN−SOURCE DIODE CHARACTERISTICS
| Forward Diode Voltage | VSD | VGS = 0 V, IS = 45 A | TJ = 25°C | 0.9 | 1.2 | V | |
|---|---|---|---|---|---|---|---|
| TJ = 125°C | 0.8 | ||||||
| Reverse Recovery Time | tRR | **** |
VGS = 0 V, dIs/dt = 100 A/µs, IS = 45 A
| | 47| | ns
Charge Time| ta| | 23|
Discharge Time| tb| | 24|
Reverse Recovery Charge| QRR| | 30| | nC
- 4. Pulse Test: Pulse Width ≤ 300 ≤s, Duty Cycle ≤ 2%.
- 5. Switching characteristics are independent of operating junction temperatures.
TYPICAL CHARACTERISTICS
ORDERING INFORMATION
| Order Number | Package | Shipping † |
|---|---|---|
| NVD5C648NLT4G | DPAK |
(Pb−Free)
| 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DATE 31 MAY 2023
NOTES:
- DIMENSIONING AND TOLERANCING ASME Y14.5M, 1994.
- CONTROLLING DIMENSION: INCHES
- THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3, AND Z.
- DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.
- DIMENSIONS D AND E ARE DETERMINED AT THE
- OUTERMOST EXTREMES OF THE PLASTIC BODY. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
- OPTIONAL MOLD FEATURE.
**GENERIC MARKING DIAGRAM***
*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, “G” or microdot “-“, may or may not be present. Some products may not follow the Generic Marking.
**RECOMMENDED MOUNTING FOOTPRINT***
STRATEGY AND SOLDERING DETAINS, PLEASE BEENEDAD THE ON SEMICONDUCTOR SOLDERING
AND MOUNTING TECHNIQUES REFERENCE MANUAL, SOLDERRM/D.
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